图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 20V 5.7A MICRO8
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 5.7A (Ta) | - | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | 650 pF @ 15 V | - | - | - | 35mOhm @ 3.8A, 4.5V | - | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
SIC_DISCRETE
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封装: - |
库存720 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 100A (Tc) | 18V, 20V | 5.1V @ 13.7mA | 82 nC @ 20 V | 2667 pF @ 800 V | +23V, -5V | - | 429W (Tc) | 25mOhm @ 43A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-11 | TO-247-4 |
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Infineon Technologies |
TRENCH <= 40V
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封装: - |
库存14,859 |
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MOSFET (Metal Oxide) | 25 V | 75A (Ta), 789A (Tc) | 4.5V, 10V | 2V @ 1.448mA | 254 nC @ 10 V | 17000 pF @ 12 V | ±16V | - | 2.5W (Ta), 278W (Tc) | 0.29mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSON-8-U04 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 5.6A MICRO8
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 5.6A (Ta) | - | 1V @ 250µA | 27 nC @ 10 V | 520 pF @ 25 V | - | - | - | 35mOhm @ 3.7A, 10V | - | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 3.6A MICRO8
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 3.6A (Ta) | - | 700mV @ 250µA (Min) | 20 nC @ 4.5 V | 590 pF @ 15 V | - | - | - | 90mOhm @ 2.4A, 4.5V | - | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 600V 6A TO252-3
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封装: - |
库存7,413 |
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MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 4V @ 80µA | 9 nC @ 10 V | 363 pF @ 400 V | ±20V | - | 30W (Tc) | 600mOhm @ 1.7A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 54A/440A HSOF-5
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封装: - |
库存4,275 |
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MOSFET (Metal Oxide) | 40 V | 54A (Ta), 440A (Tc) | 6V, 10V | 3.3V @ 250µA | 152 nC @ 10 V | 7900 pF @ 20 V | ±20V | - | 3.8W (Ta), 250W (Tc) | 0.7mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-1 | 5-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 75V 80A D2PAK
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封装: - |
库存5,700 |
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MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 3.8V @ 91µA | 68 nC @ 10 V | 4750 pF @ 37.5 V | ±20V | - | 150W (Tc) | 4.9mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
AUIRLU3114Z - 20V-40V N-CHANNEL
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 4.5V, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | 3810 pF @ 25 V | ±16V | - | 140W (Tc) | 4.9mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 700V 6A TO251-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 3.5V @ 60µA | 6.8 nC @ 400 V | 211 pF @ 400 V | ±16V | - | 30.5W (Tc) | 900mOhm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
SILICON CARBIDE MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 25V 39A/100A TDSON
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封装: - |
库存57,087 |
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MOSFET (Metal Oxide) | 25 V | 39A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 64 nC @ 10 V | 4700 pF @ 12 V | ±20V | - | 2.5W (Ta), 96W (Tc) | 1mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET 800V TDSON-8
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
HIGH POWER_NEW PG-HDSOP-22
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 200 V | 75A (Tc) | 10V | 5V @ 250µA | 150 nC @ 10 V | 5380 pF @ 50 V | ±20V | - | 341W (Tc) | 21mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 100A 8TDSON-34
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封装: - |
库存34,938 |
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MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3.8V @ 90µA | 78 nC @ 10 V | 5200 pF @ 50 V | ±20V | - | 167W (Tc) | 4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 24A/100A TDSON
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封装: - |
库存35,973 |
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MOSFET (Metal Oxide) | 60 V | 24A (Ta), 100A (Tc) | 6V, 10V | 3.3V @ 50µA | 49 nC @ 10 V | 3375 pF @ 30 V | ±20V | - | 3W (Ta), 100W (Tc) | 2.8mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 50A TO220
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封装: - |
库存1,470 |
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MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 6V, 10V | 3.8V @ 49µA | 40 nC @ 10 V | 2700 pF @ 50 V | ±20V | - | 36W (Tc) | 8.3mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 15A TO247-3
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封装: - |
库存696 |
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MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 3.9V @ 675µA | 63 nC @ 10 V | 1660 pF @ 25 V | ±20V | - | 156W (Tc) | 280mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
MOSFET 650V NCH SIC TRENCH
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封装: - |
库存786 |
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SiCFET (Silicon Carbide) | 650 V | 20A (Tc) | 18V | 5.7V @ 3mA | 15 nC @ 18 V | 496 pF @ 400 V | +23V, -5V | - | 75W (Tc) | 142mOhm @ 8.9A, 18V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
TRENCH 40<-<100V
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封装: - |
库存14,910 |
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MOSFET (Metal Oxide) | 60 V | 24A (Ta), 151A (Tc) | 4.5V, 10V | 2.3V @ 48µA | 53 nC @ 10 V | 4420 pF @ 30 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 2.2mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
SMALL SIGNAL N-CHANNEL MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 190mA (Ta) | 4.5V, 10V | 2.3V @ 13µA | 0.6 nC @ 10 V | 20.9 pF @ 25 V | ±20V | - | 500mW (Ta) | 6Ohm @ 190mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3-5 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH SMD D2PAK
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
AUTOMOTIVE MOSFET
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封装: - |
库存1,755 |
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MOSFET (Metal Oxide) | 100 V | 21A (Ta), 135A (Tc) | 6V, 10V | 3.8V @ 93µA | 85 nC @ 10 V | 4000 pF @ 50 V | ±20V | - | 3.8W (Ta), 167W (Tc) | 4.35mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET_(75V 120V(
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IAUC100N04S6L025ATMA1
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封装: - |
库存144,543 |
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MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2V @ 24µA | 34 nC @ 10 V | 2019 pF @ 25 V | ±16V | - | 62W (Tc) | 2.56mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 36A TDSON-8
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封装: - |
库存65,658 |
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MOSFET (Metal Oxide) | 200 V | 36A (Tc) | 10V | 4V @ 90µA | 29 nC @ 10 V | 2350 pF @ 100 V | ±20V | - | 125W (Tc) | 32mOhm @ 36A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET 650V NCH SIC TRENCH
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封装: - |
库存1,053 |
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SiCFET (Silicon Carbide) | 650 V | 47A (Tc) | 18V | 5.7V @ 11mA | 62 nC @ 18 V | 2131 pF @ 400 V | +23V, -5V | - | 189W (Tc) | 34mOhm @ 38.3A, 18V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 800V 8A TO220-FP
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 3.9V @ 470µA | 60 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 40W (Tc) | 650mOhm @ 5.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 40A TDSON-8-6
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4.5V, 10V | 2.3V @ 36µA | 14.6 nC @ 4.5 V | 2100 pF @ 50 V | ±20V | - | 83W (Tc) | 9.6mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |