图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 650V 11.4A TO263-3
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封装: - |
库存2,997 |
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MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 4.5V @ 400µA | 41 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 104.2W (Tc) | 310mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 100V 140A WSON-8
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封装: - |
库存25,530 |
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MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 6V, 10V | 3.8V @ 95µA | 72 nC @ 10 V | 5300 pF @ 50 V | ±20V | - | 3W (Ta), 167W (Tc) | 4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-WSON-8-2 | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 650V 11.4A TO220-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 4.5V @ 440µA | 41 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 104.2W (Tc) | 310mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 11.4A TO220-3
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封装: - |
库存1,368 |
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MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 4.5V @ 400µA | 41 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 104.2W (Tc) | 310mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET_(75V 120V( PG-HSOF-5
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封装: - |
库存11,460 |
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MOSFET (Metal Oxide) | 100 V | 210A (Tj) | 6V, 10V | 3.8V @ 150µA | 119 nC @ 10 V | 8696 pF @ 50 V | ±20V | - | 238W (Tc) | 2.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-4 | 5-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 25V 9.9A PQFN
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 25 V | 9.9A (Ta), 21A (Tc) | - | 2.35V @ 25µA | 10.4 nC @ 10 V | 653 pF @ 10 V | - | - | - | 13mOhm @ 8.5A, 10V | - | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 100V TO247AC
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封装: - |
库存1,008 |
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MOSFET (Metal Oxide) | 100 V | 203A (Tc) | 6V, 10V | 3.8V @ 278µA | 210 nC @ 10 V | 12020 pF @ 50 V | ±20V | - | 3.8W (Ta), 341W (Tc) | 1.7mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 30V 10.8A 8SO
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 10.8A (Ta) | 4.5V | 3V @ 250µA | 26 nC @ 5 V | 1801 pF @ 10 V | ±20V | - | 2.5W (Ta) | 14mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 600V 8.1A TO252-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 8.1A (Tc) | 10V | 3.5V @ 230µA | 23.4 nC @ 10 V | 512 pF @ 100 V | ±20V | - | 66W (Tc) | 520mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET_)40V 60V)
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封装: - |
库存14,874 |
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MOSFET (Metal Oxide) | 60 V | 170A (Tj) | 4.5V, 10V | 2.2V @ 65µA | 77 nC @ 10 V | 5651 pF @ 30 V | ±20V | - | 136W (Tc) | 2.2mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
库存882 |
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MOSFET (Metal Oxide) | 150 V | 120A (Tc) | 8V, 10V | 4.6V @ 264µA | 100 nC @ 10 V | 7800 pF @ 75 V | ±20V | - | 300W (Tc) | 5.1mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A 5X6 PQFN
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 29A (Ta), 100A (Tc) | - | 2.5V @ 150µA | 82 nC @ 10 V | 4730 pF @ 25 V | - | - | - | 2.4mOhm @ 50A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
SIC_DISCRETE
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封装: - |
Request a Quote |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 70A (Tc) | 18V, 20V | 5.1V @ 8.6mA | 57 nC @ 20 V | 1738 pF @ 800 V | +23V, -5V | - | 333W (Tc) | 38mOhm @ 27A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
MOSFET N-CH 600V 50A TO263-3
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封装: - |
库存12,753 |
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MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 4.5V @ 1.25mA | 108 nC @ 10 V | 4351 pF @ 400 V | ±20V | - | 227W (Tc) | 40mOhm @ 24.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
库存10,500 |
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MOSFET (Metal Oxide) | 150 V | 10.7A (Ta), 76A (Tc) | 4.5V, 10V | 2.3V @ 91µA | 23 nC @ 4.5 V | 3000 pF @ 75 V | ±20V | - | 2.5W (Ta), 125W (Tc) | 10.5mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH BARE DIE
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO247-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 3.5V @ 310µA | 28 nC @ 10 V | 710 pF @ 100 V | ±20V | - | 83W (Tc) | 1.2Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
OPTIMOSTM5LINEARFET80V
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 23A (Ta), 198A (Tc) | 10V | 3.6V @ 115µA | 96 nC @ 10 V | 6800 pF @ 40 V | ±20V | - | 3W (Ta), 217W (Tc) | 2.55mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 48A TO247-4
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 4V @ 800µA | 67 nC @ 10 V | 2895 pF @ 400 V | ±20V | - | 164W (Tc) | 60mOhm @ 15.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 40V 12A/40A 8TSDSON
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封装: - |
库存24,936 |
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MOSFET (Metal Oxide) | 40 V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 14µA | 24 nC @ 10 V | 1900 pF @ 20 V | ±20V | - | 2.1W (Ta), 35W (Tc) | 9.7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 4V @ 125µA | 80 nC @ 10 V | 3140 pF @ 25 V | ±20V | - | 190W (Tc) | 9.1mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 22.4A TO220
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封装: - |
库存1,497 |
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MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 4.5V @ 900µA | 86 nC @ 10 V | 2340 pF @ 100 V | ±20V | - | 34.7W (Tc) | 150mOhm @ 9.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
TRENCH 40<-<100V
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封装: - |
库存1,089 |
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MOSFET (Metal Oxide) | 80 V | 18.5A (Ta), 99A (Tc) | 6V, 10V | 3.8V @ 55µA | 54 nC @ 10 V | 2500 pF @ 40 V | ±20V | - | 3.8W (Ta), 107W (Tc) | 5.5mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
HIGH POWER_NEW
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 4.5V @ 860µA | 68 nC @ 10 V | 3288 pF @ 400 V | ±20V | - | 195W (Tc) | 65mOhm @ 16.4A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4-1 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 25V 22A/40A TSDSON
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封装: - |
库存74,508 |
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MOSFET (Metal Oxide) | 25 V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 36 nC @ 10 V | 2500 pF @ 12 V | ±20V | - | 2.1W (Ta), 69W (Tc) | 1.8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 560V 16A TO247-3
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封装: - |
库存558 |
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MOSFET (Metal Oxide) | 560 V | 16A (Tc) | 10V | 3.9V @ 675µA | 66 nC @ 10 V | 1600 pF @ 25 V | ±20V | - | 160W (Tc) | 280mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 53A/454A HSOG-8
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封装: - |
库存10,728 |
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MOSFET (Metal Oxide) | 60 V | 53A (Ta), 454A (Tc) | 6V, 10V | 3.3V @ 280µA | 261 nC @ 10 V | 21000 pF @ 30 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 0.75mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |