图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
TRENCH >=100V PG-TO252-3
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封装: - |
库存6,354 |
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MOSFET (Metal Oxide) | 100 V | 2.5A (Ta), 13.9A (Tc) | 4.5V, 10V | 2V @ 1.04mA | 42 nC @ 10 V | 2100 pF @ 50 V | ±20V | - | 3W (Ta), 83W (Tc) | 178mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH >=100V
|
封装: - |
库存2,829 |
|
MOSFET (Metal Oxide) | 200 V | 65A (Tc) | 10V | 5V @ 250µA | 98 nC @ 10 V | 4600 pF @ 25 V | ±30V | - | 330W (Tc) | 24mOhm @ 46A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
1200V COOLSIC MOSFET PG-TO247-3
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封装: - |
库存1,584 |
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SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | 18V | 5.7V @ 10mA | 59 nC @ 18 V | 2130 pF @ 800 V | +23V, -7V | - | 228W (Tc) | 46mOhm @ 25A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
CONSUMER PG-TO252-3
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封装: - |
库存14,127 |
|
MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 4.5V @ 80µA | 8.5 nC @ 10 V | 344 pF @ 400 V | ±20V | - | 31W (Tc) | 600mOhm @ 1.7A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH 40<-<100V
|
封装: - |
库存17,556 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 40V 360A TO263-7
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封装: - |
库存5,640 |
|
MOSFET (Metal Oxide) | 40 V | 360A (Tc) | 6V, 10V | 3.7V @ 250µA | 458 nC @ 10 V | 18000 pF @ 20 V | ±20V | - | 2.4W (Ta), 417W (Tc) | 0.65mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2PAK (6 Leads + Tab) |
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Infineon Technologies |
40V 1.9M OPTIMOS MOSFET SUPERSO8
|
封装: - |
库存37,284 |
|
MOSFET (Metal Oxide) | 40 V | 29A (Ta), 170A (Tc) | 7V, 10V | 3.4V @ 50µA | 55 nC @ 10 V | 3900 pF @ 20 V | ±20V | - | 3W (Ta), 100W (Tc) | 1.9mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 600V 10A TO252-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 4.5V @ 140µA | 12.7 nC @ 10 V | 534 pF @ 400 V | ±20V | - | 43W (Tc) | 360mOhm @ 2.9A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-344 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
IAUC120N04S6L012ATMA1
|
封装: - |
库存99,426 |
|
MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 2V @ 60µA | 80 nC @ 10 V | 4832 pF @ 25 V | ±16V | - | 115W (Tc) | 1.21mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
TRENCH <= 40V
|
封装: - |
库存10,230 |
|
MOSFET (Metal Oxide) | 25 V | 40A (Ta), 479A (Tc) | 4.5V, 10V | 2V @ 10mA | 238 nC @ 10 V | 11000 pF @ 12.5 V | ±20V | - | 2.5W (Ta), 188W (Tc) | 0.45mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET_(75V 120V(
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO220-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 3.8V @ 273µA | 206 nC @ 10 V | 14400 pF @ 37.5 V | ±20V | - | 300W (Tc) | 2.3mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 950V 9A TO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 950 V | 9A (Tc) | 10V | 3.5V @ 220µA | 23 nC @ 10 V | 712 pF @ 400 V | ±20V | - | 28W (Tc) | 750mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRENCH <= 40V
|
封装: - |
库存10,005 |
|
MOSFET (Metal Oxide) | 30 V | 13.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 14 nC @ 4.5 V | 1010 pF @ 15 V | ±20V | - | 2.5W (Ta) | 9.1mOhm @ 13A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | PG-DSO-8-902 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 600V 14A TO263-3-2
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V | 4.5V @ 300µA | 28 nC @ 10 V | 1190 pF @ 400 V | ±20V | - | 75W (Tc) | 170mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 30V 12A/22.5A TDSON
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 12A (Ta), 22.5A (Tc) | 10V | 2.2V @ 150µA | 73.1 nC @ 10 V | 3670 pF @ 15 V | ±25V | - | 2.5W (Ta), 69W (Tc) | 13mOhm @ 22.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-3 | 8-PowerVDFN |
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Infineon Technologies |
OPTLMOS N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 3.5V @ 90µA | 68 nC @ 10 V | 4910 pF @ 50 V | ±20V | - | 150W (Tc) | 7.2mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 25A/40A TSDSON
|
封装: - |
库存36,849 |
|
MOSFET (Metal Oxide) | 40 V | 25A (Ta), 40A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 31 nC @ 10 V | 2700 pF @ 20 V | ±20V | - | 2.5W (Ta), 83W (Tc) | 2.1mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 19A/80A TDSON
|
封装: - |
库存59,685 |
|
MOSFET (Metal Oxide) | 20 V | 19A (Ta), 80A (Tc) | 2.5V, 4.5V | 1.2V @ 110µA | 27.6 nC @ 4.5 V | 4100 pF @ 10 V | ±12V | - | 2.8W (Ta), 48W (Tc) | 4.6mOhm @ 50A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH
|
封装: - |
库存507 |
|
MOSFET (Metal Oxide) | 600 V | 54A (Tc) | 10V | 4.5V @ 1.63mA | 136 nC @ 10 V | 5623 pF @ 400 V | ±20V | - | 245W (Tc) | 37mOhm @ 32.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 700V 10A TO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 10A (Tc) | 10V | 3.5V @ 120µA | 13.1 nC @ 10 V | 424 pF @ 400 V | ±16V | - | 22.7W (Tc) | 450mOhm @ 2.3A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 16A/97A TDSON
|
封装: - |
库存14,640 |
|
MOSFET (Metal Oxide) | 100 V | 16A (Ta), 97A (Tc) | 4.5V, 10V | 2.3V @ 61µA | 49 nC @ 10 V | 3400 pF @ 50 V | ±20V | - | 2.5W (Ta), 96W (Tc) | 5.4mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
TRENCH >=100V
|
封装: - |
库存5,265 |
|
MOSFET (Metal Oxide) | 150 V | 17.5A (Ta), 143A (Tc) | 8V, 10V | 4.6V @ 191µA | 73 nC @ 10 V | 5700 pF @ 75 V | ±20V | - | 3.8W (Ta), 250W (Tc) | 5.4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
TRENCH 40<-<100V
|
封装: - |
库存2,385 |
|
MOSFET (Metal Oxide) | 60 V | 41A (Ta), 282A (Tc) | 6V, 10V | 3.3V @ 186µA | 233 nC @ 10 V | 10500 pF @ 30 V | ±20V | - | 3.8W (Ta), 250W (Tc) | 1.2mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-U02 | TO-263-7, D2PAK (6 Leads + Tab) |
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Infineon Technologies |
MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 12V | 4.5V @ 1.89mA | 196 nC @ 12 V | 7370 pF @ 300 V | ±20V | - | 500W (Tc) | 17mOhm @ 29A, 12V | -40°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
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Infineon Technologies |
MOSFET N-CH 30V 12A 5X6 PQFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 14A (Ta), 44A (Tc) | - | 2.35V @ 25µA | 15 nC @ 10 V | 1180 pF @ 10 V | - | - | - | 9mOhm @ 20A, 10V | - | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 10A PQFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 10A (Ta), 12A (Tc) | - | 1.1V @ 10µA | 14 nC @ 4.5 V | 1110 pF @ 10 V | - | - | - | 11.7mOhm @ 8.5A, 4.5V | - | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 650V 11.4A D2PAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 4.5V @ 400µA | 41 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 104.2W (Tc) | 310mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |