图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 80A D2PAK
|
封装: - |
库存7,014 |
|
MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 4V @ 58µA | 82 nC @ 10 V | 6600 pF @ 30 V | ±20V | - | 115W (Tc) | 5.4mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 16A TO263-3-2
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 4.5V @ 340µA | 31 nC @ 10 V | 1330 pF @ 400 V | ±20V | - | 83W (Tc) | 145mOhm @ 6.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 45A TO220-FP
|
封装: - |
库存8,994 |
|
MOSFET (Metal Oxide) | 100 V | 45A (Tc) | 6V, 10V | 3.5V @ 75µA | 55 nC @ 10 V | 3980 pF @ 50 V | ±20V | - | 37.5W (Tc) | 8.6mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
SMALL SIGNAL N-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 190mA (Ta) | 4.5V, 10V | 2.3V @ 13µA | 0.6 nC @ 10 V | 20.9 pF @ 25 V | ±20V | - | 500mW (Ta) | 6Ohm @ 190mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3-5 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
AUTOMOTIVE PG-HDSOP-22
|
封装: - |
库存390 |
|
MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 12V | 4.5V @ 3.08mA | 318 nC @ 12 V | 11987 pF @ 300 V | ±20V | - | 694W (Tc) | 10mOhm @ 50A, 12V | -40°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
||
Infineon Technologies |
TRENCH 40<-<100V
|
封装: - |
库存2,073 |
|
MOSFET (Metal Oxide) | 60 V | 37A (Ta), 195A (Tc) | 6V, 10V | 3.3V @ 186µA | 233 nC @ 10 V | 10500 pF @ 30 V | ±20V | - | 3.8W (Ta), 250W (Tc) | 1.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
IAUC60N04S6N044ATMA1
|
封装: - |
库存42,411 |
|
MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 7V, 10V | 3V @ 14µA | 18 nC @ 10 V | 1042 pF @ 25 V | ±20V | - | 42W (Tc) | 4.52mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 650V 14A TO247-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 14A (Tc) | - | 4.5V @ 320µA | 28 nC @ 10 V | 1291 pF @ 400 V | ±20V | - | 77W (Tc) | 190mOhm @ 6.4A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
TRENCH >=100V PG-TO263-3
|
封装: - |
库存1,689 |
|
MOSFET (Metal Oxide) | 100 V | 6.9A (Ta), 62A (Tc) | 10V | 4V @ 5.55mA | 236 nC @ 10 V | 11000 pF @ 50 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 33mOhm @ 53A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 650V 17A TO247-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 17A (Tc) | - | 4.5V @ 420µA | 36 nC @ 10 V | 1694 pF @ 400 V | ±20V | - | 98W (Tc) | 145mOhm @ 8.5A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 85 V | 95A (Tc) | 10V | 4V @ 130µA | 99 nC @ 10 V | 6690 pF @ 40 V | ±20V | - | 167W (Tc) | 6.4mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 31A/100A TDSON
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 85µA | 150 nC @ 10 V | 12000 pF @ 20 V | ±20V | - | 2.5W (Ta), 139W (Tc) | 1.6mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 600V 10.6A TO220-FP
|
封装: - |
库存1,500 |
|
MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 3.5V @ 320µA | 32 nC @ 10 V | 700 pF @ 100 V | ±20V | - | 31W (Tc) | 380mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET_(20V 40V) PG-TSDSON-8
|
封装: - |
库存14,940 |
|
MOSFET (Metal Oxide) | 40 V | 89A (Tj) | 7V, 10V | 3.4V @ 21µA | 25 nC @ 10 V | 1737 pF @ 25 V | ±20V | - | 58W (Tc) | 3.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-33 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 650V 3.2A TO220-FP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 3.2A (Tc) | 10V | 3.9V @ 135µA | 17 nC @ 10 V | 400 pF @ 25 V | ±20V | - | 29.7W (Tc) | 1.4Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 | TO-220-3 Full Pack |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 15 nC @ 10 V | 1600 pF @ 15 V | ±20V | - | 42W (Tc) | 9.6mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 2V @ 40µA | 22 nC @ 5 V | 2783 pF @ 15 V | ±20V | - | 83W (Tc) | 5.1mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3-21 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
Request a Quote |
|
- | 650 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 250V TSON-8
|
封装: - |
库存27,393 |
|
MOSFET (Metal Oxide) | 250 V | 36A (Tc) | - | - | - | - | ±20V | - | - | - | - | Surface Mount | PG-TSON-8-3 | 8-PowerTDFN |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 30V 12A/40A TSDSON
|
封装: - |
库存77,838 |
|
MOSFET (Metal Oxide) | 30 V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 10 nC @ 10 V | 670 pF @ 15 V | ±20V | - | 2.1W (Ta), 26W (Tc) | 6.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 7A (Ta), 44A (Tc) | 8V, 10V | 4.6V @ 46µA | 18 nC @ 10 V | 1400 pF @ 75 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 22mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-5 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 12A/40A TSDSON
|
封装: - |
库存88,755 |
|
MOSFET (Metal Oxide) | 30 V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 10 nC @ 10 V | 670 pF @ 15 V | ±20V | - | - | 7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 600V 12A TO252-3
|
封装: - |
库存5,043 |
|
MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 4.5V @ 180µA | 15.3 nC @ 10 V | 656 pF @ 400 V | ±20V | - | 51W (Tc) | 280mOhm @ 3.6A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-344 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 120V 120A TO220-3
|
封装: - |
库存1,707 |
|
MOSFET (Metal Oxide) | 120 V | 120A (Tc) | 10V | 4V @ 270µA | 211 nC @ 10 V | 13800 pF @ 60 V | ±20V | - | 300W (Tc) | 4.1mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 100V 23A TO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 23A (Tc) | 10V | 4V @ 250µA | 97 nC @ 10 V | 1300 pF @ 25 V | ±20V | - | 140W (Tc) | 117mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
|
封装: - |
库存2,727 |
|
SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V | 5.7V @ 6mA | 33 nC @ 18 V | 1118 pF @ 400 V | +23V, -5V | - | 183W (Tc) | 64mOhm @ 20.1A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Infineon Technologies |
MOSFET N-CH
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220-3
|
封装: - |
库存9,558 |
|
MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 4.5V @ 630µ | 11 nC @ 10 V | 1750 pF @ 100 V | ±20V | - | 151W (Tc) | 190mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |