图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET
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封装: - |
库存11,061 |
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MOSFET (Metal Oxide) | 80 V | 20A (Ta), 129A (Tc) | 6V, 10V | 3.8V @ 85µA | 81 nC @ 10 V | 3800 pF @ 40 V | ±20V | - | 3W (Ta), 150W (Tc) | 4mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH 40<-<100V
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封装: - |
库存13,305 |
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MOSFET (Metal Oxide) | 60 V | 19.6A (Tc) | 4.5V, 10V | 2V @ 724µA | 14.8 nC @ 10 V | 1400 pF @ 30 V | ±20V | - | 83W (Tc) | 80mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO262-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 4.5V @ 700µA | 68 nC @ 10 V | 1850 pF @ 100 V | ±20V | - | 151W (Tc) | 190mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 3.9V @ 675µA | 66 nC @ 10 V | 1600 pF @ 25 V | ±20V | - | 160W (Tc) | 280mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 15A/40A 8TSDSON
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 30 nC @ 10 V | 2400 pF @ 15 V | ±20V | - | 2.1W (Ta), 45W (Tc) | 5.8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 40V 85A TO252-3
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封装: - |
库存79,641 |
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MOSFET (Metal Oxide) | 40 V | 85A (Tc) | - | 4V @ 150µA | 89 nC @ 10 V | 6085 pF @ 25 V | ±20V | - | 88W (Tc) | 7.3mOhm @ 85A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 16A DPAK
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 16A (Tc) | - | 4V @ 250µA | 44 nC @ 10 V | 640 pF @ 25 V | - | - | - | 115mOhm @ 10A, 10V | - | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 7A TO252-3-313
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封装: - |
库存4,608 |
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MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 4.5V @ 140µA | 14 nC @ 10 V | 679 pF @ 400 V | ±20V | - | 43W (Tc) | 360mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 9A TO263-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 3.5V @ 340µA | 22 nC @ 10 V | 790 pF @ 100 V | ±20V | - | 83W (Tc) | 385mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
IGBT
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 2.2V @ 85µA | 59 nC @ 10 V | 3900 pF @ 25 V | +5V, -16V | - | 58W (Tc) | 10.6mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SIC DISCRETE
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封装: - |
库存666 |
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SiC (Silicon Carbide Junction Transistor) | 2000 V | 48A (Tc) | 15V, 18V | 5.5V @ 12.1mA | 82 nC @ 18 V | - | +20V, -7V | - | 348W (Tc) | 64mOhm @ 20A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-U04 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 1TO251-3
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET P-CH 30V 50A TO252-5
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2V @ 250µA | 126 nC @ 10 V | 6880 pF @ 25 V | ±20V | - | 150W (Tc) | 7mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-5 | TO-252-5, DPAK (4 Leads + Tab), TO-252AD |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 5.2A (Ta) | 4.5V, 10V | 2V @ 50µA | 42 nC @ 10 V | 1390 pF @ 25 V | ±20V | - | 1.8W (Ta) | 33mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4-21 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 950V 74.7A TO247-3
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封装: - |
库存996 |
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MOSFET (Metal Oxide) | 950 V | 74.7A (Tc) | 10V | 3.5V @ 2.85mA | 315 nC @ 10 V | 9378 pF @ 400 V | ±20V | - | 446W (Tc) | 60mOhm @ 57A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 7A TDSON-8-5
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封装: - |
库存16,875 |
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MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 10V | 4V @ 13µA | 5.6 nC @ 10 V | 430 pF @ 100 V | ±20V | - | 34W (Tc) | 225mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
TRENCH <= 40V
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 20A (Ta), 103A (Tc) | 4.5V, 10V | - | - | - | - | - | 2.1W (Ta), 39W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | PG-VSON-6-1 | 6-PowerVDFN |
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Infineon Technologies |
CONSUMER PG-SOT223-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 4.5V @ 80µA | 8.5 nC @ 10 V | 344 pF @ 400 V | ±20V | - | 7W (Tc) | 600mOhm @ 1.7A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4V @ 90µA | 80 nC @ 10 V | 5200 pF @ 25 V | ±20V | - | 136W (Tc) | 4.1mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 2V @ 45µA | 78 nC @ 10 V | 6300 pF @ 20 V | ±20V | - | 94W (Tc) | 3.6mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 80A D2PAK
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封装: - |
库存16,545 |
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MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 3.5V @ 73µA | 56 nC @ 10 V | 3840 pF @ 40 V | ±20V | - | 136W (Tc) | 6.7mOhm @ 73A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7P
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 190A (Tc) | - | 4V @ 250µA | 230 nC @ 10 V | 9830 pF @ 50 V | - | - | 380W (Tc) | 4mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2PAK (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 150V 203A TO247-3
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封装: - |
库存1,818 |
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MOSFET (Metal Oxide) | 150 V | 203A (Tc) | 10V | 4.6V @ 265µA | 200 nC @ 10 V | 12000 pF @ 75 V | ±20V | - | 3.8W (Ta), 556W (Tc) | 2.7mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 30A TO252-3
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封装: - |
库存16,182 |
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MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4.5V, 10V | 2.2V @ 11µA | 10 nC @ 4.5 V | 1600 pF @ 30 V | ±20V | - | 36W (Tc) | 22mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-311 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 70A TO252-3
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封装: - |
库存15,240 |
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MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 2.2V @ 30µA | 48 nC @ 10 V | 3300 pF @ 25 V | ±16V | - | 68W (Tc) | 4.3mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 9A (Ta), 83A (Tc) | 6V, 10V | 3.5V @ 100µA | 74 nC @ 10 V | 5500 pF @ 50 V | ±20V | - | 2.8W (Ta), 78W (Tc) | 5.6mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-5-3 | DirectFET™ Isometric MN |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 9A (Ta), 83A (Tc) | 6V, 10V | 3.5V @ 100µA | 74 nC @ 10 V | 5500 pF @ 50 V | ±20V | - | 2.8W (Ta), 78W (Tc) | 5.6mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-5-3 | DirectFET™ Isometric MN |