图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 180A 2WDSON
|
封装: 3-WDSON |
库存3,520 |
|
MOSFET (Metal Oxide) | 30V | 39A (Ta), 180A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 169nC @ 10V | 16900pF @ 15V | ±20V | - | 2.8W (Ta), 89W (Tc) | 1.2 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
||
Infineon Technologies |
MOSFET N-CH 60V 100A TO263-7
|
封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
库存6,048 |
|
MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4V @ 93µA | 130nC @ 10V | 11000pF @ 30V | ±20V | - | 167W (Tc) | 3.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET P-CH 55V 14A TO-220FP
|
封装: TO-220-3 Full Pack |
库存8,448 |
|
MOSFET (Metal Oxide) | 55V | 14A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | ±20V | - | 37W (Tc) | 100 mOhm @ 7.8A, 10V | - | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET P-CH 150V 13A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存136,596 |
|
MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | ±20V | - | 3.8W (Ta), 110W (Tc) | 290 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 30V 12.7A SO-8FL
|
封装: 8-PowerTDFN, 5 Leads |
库存52,404 |
|
MOSFET (Metal Oxide) | 30V | 12.7A (Ta), 100A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 53nC @ 11.5V | 3250pF @ 12V | ±20V | - | 890mW (Ta), 55.5W (Tc) | 3.4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Vishay Siliconix |
MOSFET P-CH 12V 5.9A 6-TSOP
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存622,488 |
|
MOSFET (Metal Oxide) | 12V | 5.9A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 33nC @ 4.5V | - | ±8V | - | 1.1W (Ta) | 23 mOhm @ 7.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 100V 450MA TO92-3
|
封装: E-Line-3 |
库存6,576 |
|
MOSFET (Metal Oxide) | 100V | 450mA (Ta) | 5V, 10V | 2.4V @ 1mA | - | 100pF @ 25V | ±20V | - | 700mW (Ta) | 1.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
STMicroelectronics |
MOSFET N-CH 30V 160A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,504 |
|
MOSFET (Metal Oxide) | 30V | 160A (Tc) | 4.5V, 10V | 1V @ 250µA | 110nC @ 4.5V | 5500pF @ 25V | ±16V | - | 300W (Tc) | 3.3 mOhm @ 80A, 10V | - | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 160A TO262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,112 |
|
MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | ±16V | - | 200W (Tc) | 3.1 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 20V 93A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存24,000 |
|
MOSFET (Metal Oxide) | 20V | 93A (Tc) | 4.5V, 10V | 2.45V @ 250µA | 27nC @ 4.5V | 2160pF @ 10V | ±20V | - | 79W (Tc) | 5.7 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH TO-264
|
封装: TO-264-3, TO-264AA |
库存66,108 |
|
MOSFET (Metal Oxide) | 300V | 170A (Tc) | 10V | 4.5V @ 1mA | 258nC @ 10V | 20000pF @ 25V | ±20V | - | 1250W (Tc) | 18 mOhm @ 85A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS264? | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 900V 12A TO-247
|
封装: TO-247-3 |
库存3,696 |
|
MOSFET (Metal Oxide) | 900V | 12A (Tc) | 10V | 6.5V @ 1mA | 56nC @ 10V | 3080pF @ 25V | ±30V | - | 380W (Tc) | 900 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 1KV .1A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存5,216 |
|
MOSFET (Metal Oxide) | 1000V | 100mA (Tc) | 10V | 4.5V @ 25µA | 6.9nC @ 10V | 54pF @ 25V | ±20V | - | 25W (Tc) | 80 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET P-CH 50V 9.7A TO-220AB
|
封装: TO-220-3 |
库存13,812 |
|
MOSFET (Metal Oxide) | 50V | 9.7A (Tc) | 10V | 4V @ 250µA | 26nC @ 10V | 480pF @ 25V | ±20V | - | 40W (Tc) | 280 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 7A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存164,964 |
|
MOSFET (Metal Oxide) | 40V | 7A (Ta) | 4.5V, 10V | 3V @ 250µA | 13nC @ 10V | 516pF @ 20V | ±20V | - | 3.1W (Ta) | 30 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 20A 8-DFN
|
封装: 8-PowerSMD, Flat Leads |
库存1,201,452 |
|
MOSFET (Metal Oxide) | 30V | 13.5A (Ta), 36A (Tc) | 4.5V, 10V | 3V @ 250µA | 48nC @ 10V | 4250pF @ 15V | ±20V | Schottky Diode (Body) | 3.1W (Ta), 23W (Tc) | 10 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 2.6A SSOT3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存2,544 |
|
MOSFET (Metal Oxide) | 60V | 2.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 5.4nC @ 10V | 335pF @ 30V | ±20V | - | 1.5W (Ta) | 116 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
||
Micro Commercial Co |
P-CHANNEL MOSFET, SOT-23 PACKAGE
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存147,000 |
|
MOSFET (Metal Oxide) | 30V | 3A | 10V | 3V @ 250µA | 10nC @ 10V | 226pF @ 100V | ±20V | - | 250mW | 180 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V 19A TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存162,288 |
|
MOSFET (Metal Oxide) | 150V | 3A (Ta), 19A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 22nC @ 10V | 1165pF @ 75V | ±20V | - | 2.5W (Ta), 83W (Tc) | 85 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 20V 3.6A 6-TSOP
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存2,496,216 |
|
MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 9nC @ 4.5V | - | ±12V | - | 1.1W (Ta) | 60 mOhm @ 4.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Diodes Incorporated |
MOSFET N-CH 20V 0.51A
|
封装: 3-XFDFN |
库存349,866 |
|
MOSFET (Metal Oxide) | 20V | 510mA (Ta) | 1.2V, 4.5V | 1V @ 250µA | 0.5nC @ 4.5V | 27.6pF @ 16V | ±8V | - | 400mW (Ta) | 990 mOhm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-X2-DFN0806 | 3-XFDFN |
||
IXYS |
MOSFET P-CH -100V -210A TO-264
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
MOSFET N-CH 40V 9.2A/23A DPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 9.2A (Ta), 23A (Tc) | 10V | 4V @ 20µA | 14 nC @ 10 V | 380 pF @ 25 V | ±20V | - | 2.9W (Ta), 18.3W (Tc) | 17.9mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
N-CHANNEL 100 V, 4.8 MOHM TYP.,
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 4.5V @ 250µA | 93 nC @ 10 V | 4430 pF @ 25 V | ±20V | - | 340W (Tc) | 4mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT523 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 300mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.35 nC @ 4.5 V | 21.5 pF @ 15 V | ±10V | - | 280mW (Ta) | 3Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
onsemi |
PCH 10V DRIVE SERIES
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
NextGen Components |
SiC MOSFET N 1200V 40mohm 75A 4
|
封装: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 20V | 2.8V @ 10mA | - | 2534 pF @ 1000 V | +20V, -5V | - | 366W (Ta) | 40mOhm @ 35A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Sanyo |
N-CHANNEL SILICON MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 7.2A DFN2020MD-6
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 7.2A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 19 nC @ 10 V | 607 pF @ 15 V | ±20V | - | 2.08W (Ta) | 24mOhm @ 7.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 20A 8TSON
|
封装: - |
库存29,856 |
|
MOSFET (Metal Oxide) | 60 V | 20A | 4.5V, 10V | 2.5V @ 200µA | 23 nC @ 10 V | 1100 pF @ 10 V | ±20V | - | 65W (Tc) | 12mOhm @ 10A, 10V | -55°C ~ 175°C | Surface Mount | 8-TSON Advance-WF (3.1x3.1) | 8-PowerVDFN |