图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 38A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存17,892 |
|
MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | - | 3.8W (Ta), 68W (Tc) | 26 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 20V 77A TO-220AB
|
封装: TO-220-3 |
库存2,000 |
|
MOSFET (Metal Oxide) | 20V | 77A (Tc) | 2.8V, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | ±12V | - | 88W (Tc) | 8.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 6.3A TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存107,784 |
|
MOSFET (Metal Oxide) | 800V | 6.3A (Tc) | 10V | 5V @ 250µA | 31nC @ 10V | 1500pF @ 25V | ±30V | - | 185W (Tc) | 1.95 Ohm @ 3.15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 37A TO220FP
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存96,492 |
|
MOSFET (Metal Oxide) | 60V | 37A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2400pF @ 25V | ±20V | - | 50W (Tc) | 18 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 41A TO220AB
|
封装: TO-220-3 |
库存3,200 |
|
MOSFET (Metal Oxide) | 100V | 41A (Tc) | 10V | 4V @ 1mA | - | 2535pF @ 25V | ±20V | - | 149W (Tc) | 35 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 120A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,792 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 140µA | 195nC @ 10V | 15750pF @ 25V | ±20V | - | 188W (Tc) | 2.8 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 100V 10A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,240 |
|
MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | ±16V | - | 48W (Tc) | 185 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
CONSUMER
|
封装: - |
库存7,360 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 500V 43A ISOPLUS247
|
封装: ISOPLUS247? |
库存2,528 |
|
MOSFET (Metal Oxide) | 500V | 43A (Tc) | 10V | 4.5V @ 8mA | 330nC @ 10V | 9400pF @ 25V | ±20V | - | 400W (Tc) | 100 mOhm @ 25A, 10V | -40°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,952 |
|
MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | ±20V | - | 3.7W (Ta), 43W (Tc) | 200 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Texas Instruments |
MOSFET N-CH 12V 3.5A
|
封装: 6-UFBGA, DSBGA |
库存2,016 |
|
MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 2.5V, 4.5V | 1.3V @ 250µA | 11.2nC @ 4.5V | 1370pF @ 6V | ±10V | - | 1.9W (Ta) | 10.2 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DSBGA (1x1.5) | 6-UFBGA, DSBGA |
||
Nexperia USA Inc. |
MOSFET N-CH 80V 1.1A DFN1010D-3
|
封装: 3-XDFN Exposed Pad |
库存6,400 |
|
MOSFET (Metal Oxide) | 80V | 1.1A (Ta) | 4.5V, 10V | 2.7V @ 250µA | 4.5nC @ 10V | 130pF @ 40V | ±20V | - | 400mW (Ta), 6.25W (Tc) | 450 mOhm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1010D-3 | 3-XDFN Exposed Pad |
||
Vishay Siliconix |
MOSFET N-CH 20V 7.9A 6-TSOP
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存803,112 |
|
MOSFET (Metal Oxide) | 20V | 7.9A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 18nC @ 8V | 666pF @ 10V | ±8V | - | 1.7W (Ta), 2.7W (Tc) | 28 mOhm @ 5.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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STMicroelectronics |
MOSFET N-CH 620V 3.8A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,088 |
|
MOSFET (Metal Oxide) | 620V | 3.8A (Tc) | 10V | 4.5V @ 50µA | 14nC @ 10V | 450pF @ 50V | ±30V | - | 70W (Tc) | 1.95 Ohm @ 1.9A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET NCH 40V 30A POWER56
|
封装: 8-PowerTDFN |
库存6,944 |
|
MOSFET (Metal Oxide) | 40V | 30A (Tc) | 10V | 3V @ 250µA | 28nC @ 10V | 1210pF @ 20V | ±20V | - | 50W (Tj) | 7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存890,244 |
|
MOSFET (Metal Oxide) | 100V | 60A (Tc) | 6V, 10V | 3V @ 250µA | 66nC @ 10V | 2350pF @ 50V | ±20V | - | 5.4W (Ta), 83W (Tc) | 7.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Infineon Technologies |
MOSFET N-CH 60V 57A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存19,344 |
|
MOSFET (Metal Oxide) | 60V | 57A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | ±20V | - | 92W (Tc) | 12 mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 3A SSOT-6
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存1,840,812 |
|
MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4.5V, 10V | 3V @ 250µA | 24nC @ 10V | 759pF @ 30V | ±20V | - | 1.6W (Ta) | 105 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
||
onsemi |
MOSFET N-CH 600V 20A TO220-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 5V @ 250µA | 98 nC @ 10 V | 3080 pF @ 25 V | ±30V | - | 208W (Tc) | 190mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
onsemi |
MOSFET N-CH 80V 50A POWER56
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 50A (Tc) | 10V | 4V @ 250µA | 30 nC @ 10 V | 1440 pF @ 40 V | ±20V | - | 75W (Tj) | 13.4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerVDFN |
||
MOSLEADER |
N 20V SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
P-CHANNEL MOSFET, DFN3333
|
封装: - |
库存41,400 |
|
MOSFET (Metal Oxide) | 20 V | 55A | 1.8V, 4.5V | 1V @ 250µA | 149 nC @ 10 V | 6358 pF @ 10 V | ±10V | - | 3.2W (Ta), 38W (Tc) | 8.3mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333 | 8-VDFN Exposed Pad |
||
Vishay Siliconix |
P-CHANNEL 20-V (D-S) MOSFET
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 20 V | 4.5A (Ta), 5.9A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 36 nC @ 8 V | - | ±8V | - | 1W (Ta), 1.7W (Tc) | 32mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Taiwan Semiconductor Corporation |
150V, 1.4A, SINGLE N-CHANNEL PO
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 1.4A (Tc) | 6V, 10V | 3.5V @ 250µA | 8 nC @ 10 V | 332 pF @ 10 V | ±20V | - | 2.1W (Tc) | 480mOhm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
||
Rohm Semiconductor |
750V, 34A, 4-PIN THD, TRENCH-STR
|
封装: - |
库存1,500 |
|
SiCFET (Silicon Carbide) | 750 V | 34A (Tc) | 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | 1460 pF @ 500 V | +21V, -4V | - | 115W | 59mOhm @ 17A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Micro Commercial Co |
MOSFET P-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 600mA | 1.8V, 4.5V | 1.1V @ 250µA | 0.86 nC @ 4.5 V | 40 pF @ 16 V | ±12V | - | 150mW (Ta) | 850mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 400 V | 2.6A (Tc) | 10V | 4V @ 1mA | - | 500 pF @ 25 V | ±20V | - | 40W (Tc) | 2.5Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Goford Semiconductor |
P-30V,-25A,RD(MAX)<5.5M@-10V,VTH
|
封装: - |
库存12,000 |
|
MOSFET (Metal Oxide) | 30 V | 25A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 111 nC @ 10 V | 7221 pF @ 15 V | ±20V | - | 3.5W (Tc) | 5.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
MOSFET N-CH 1200V 15A SMD
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V POWERDI333
|
封装: - |
库存11,676 |
|
MOSFET (Metal Oxide) | 30 V | 19.8A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 46 nC @ 10 V | 2380 pF @ 15 V | ±25V | - | 980mW (Ta) | 10mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |