图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 86A DIRECTFET
|
封装: DirectFET? Isometric MN |
库存2,128 |
|
MOSFET (Metal Oxide) | 60V | 86A (Tc) | 10V | 4.9V @ 150µA | 50nC @ 10V | 2120pF @ 25V | ±20V | - | 2.8W (Ta), 89W (Tc) | 7 mOhm @ 17A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MN | DirectFET? Isometric MN |
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Infineon Technologies |
MOSFET N-CH 20V 75A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存2,400 |
|
MOSFET (Metal Oxide) | 20V | 75A (Tc) | 2.8V, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | ±12V | - | 88W (Tc) | 9 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 77A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存61,212 |
|
MOSFET (Metal Oxide) | 20V | 77A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | ±20V | - | 87W (Tc) | 9 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 20V 24A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,984 |
|
MOSFET (Metal Oxide) | 20V | 24A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 44nC @ 4.5V | 1460pF @ 15V | ±8V | - | 75W (Tc) | 42 mOhm @ 12A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 7.3A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存4,000 |
|
MOSFET (Metal Oxide) | 100V | 7.3A (Tc) | 5V, 10V | 2V @ 250µA | 6nC @ 5V | 290pF @ 25V | ±20V | - | 3.75W (Ta), 40W (Tc) | 350 mOhm @ 3.65A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 6A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存204,480 |
|
MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 3V @ 250µA | 17nC @ 10V | 350pF @ 15V | ±20V | Schottky Diode (Isolated) | 900mW (Ta) | 35 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 7A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存4,208 |
|
MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 3V @ 250µA | 70nC @ 10V | 2500pF @ 24V | ±20V | - | 830mW (Ta) | 11.5 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 15A TO220AB
|
封装: TO-220-3 |
库存60,132 |
|
MOSFET (Metal Oxide) | 60V | 15A (Tc) | 5V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | ±10V | - | 48.4W (Tc) | 100 mOhm @ 7.5A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 2.5A TO220FP
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存15,948 |
|
MOSFET (Metal Oxide) | 600V | 2.5A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | ±20V | - | 35W (Tc) | 2.2 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 600V 19A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,392 |
|
MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 2050pF @ 50V | ±25V | - | 150W (Tc) | 180 mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 700V 20A TO-247
|
封装: TO-247-3 |
库存53,784 |
|
MOSFET (Metal Oxide) | 700V | 20A (Tc) | 10V | 4.5V @ 150µA | 185nC @ 10V | 6000pF @ 25V | ±30V | - | 350W (Tc) | 285 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存288,000 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 150µA | 170nC @ 10V | 6540pF @ 50V | ±20V | - | 300W (Tc) | 3 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Microsemi Corporation |
MOSFET N-CH 500V 56A TO-264
|
封装: TO-264-3, TO-264AA |
库存6,992 |
|
MOSFET (Metal Oxide) | 500V | 56A (Tc) | 10V | 5V @ 2.5mA | 220nC @ 10V | 8800pF @ 25V | ±30V | - | 780W (Tc) | 100 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Vishay Siliconix |
MOSFET N-CH 500V 16A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,688 |
|
MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 5V @ 250µA | 68nC @ 10V | 1900pF @ 25V | ±30V | - | 250W (Tc) | 380 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 8TDSON
|
封装: 8-PowerTDFN |
库存5,392 |
|
MOSFET (Metal Oxide) | 40V | 40A (Tc) | 7V, 10V | 3.4V @ 10µA | 13.7nC @ 10V | 771pF @ 25V | ±20V | - | 34W (Tc) | 8.4 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-32 | 8-PowerTDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 1.3A TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存110,244 |
|
MOSFET (Metal Oxide) | 600V | 1.3A (Tc) | 10V | 4.5V @ 250µA | 8nC @ 10V | 160pF @ 25V | ±30V | - | 45W (Tc) | 9 Ohm @ 650mA, 10V | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 500V 11A TO-220FP
|
封装: TO-220-3 Full Pack |
库存14,478 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 850pF @ 50V | ±25V | - | 25W (Tc) | 380 mOhm @ 5.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 60V 0.25A SST3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存1,684,536 |
|
MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 2.5V, 10V | 2.3V @ 1mA | - | 15pF @ 25V | ±20V | - | 200mW (Ta) | 2.4 Ohm @ 250mA, 10V | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR SOP
|
封装: - |
库存8,940 |
|
MOSFET (Metal Oxide) | 45 V | 100A (Tc) | 4.5V, 10V | 2.4V @ 500µA | 73 nC @ 10 V | 5175 pF @ 22.5 V | ±20V | - | 830mW (Ta), 116W (Tc) | 2.8mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
onsemi |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 150V 203A TO247-3
|
封装: - |
库存1,818 |
|
MOSFET (Metal Oxide) | 150 V | 203A (Tc) | 10V | 4.6V @ 265µA | 200 nC @ 10 V | 12000 pF @ 75 V | ±20V | - | 3.8W (Ta), 556W (Tc) | 2.7mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Sanken Electric USA Inc. |
MOSFET 40V/60A/0.007
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 60A (Ta) | 10V | 2.3V @ 250µA | - | 2800 pF @ 10 V | +20V, -10V | - | 60W (Tc) | 7mOhm @ 25A, 10V | 150°C | Surface Mount | TO-220S | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 15A 8SOIC
|
封装: - |
库存6,951 |
|
MOSFET (Metal Oxide) | 30 V | 15A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 58 nC @ 10 V | 2170 pF @ 15 V | ±20V | - | 6.8W (Tc) | 18mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 900V 3.6A TO220AB
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | - | 4V @ 250µA | 78 nC @ 10 V | 1200 pF @ 25 V | ±20V | - | 125W (Tc) | 3.7Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
onsemi |
MOSFET N-CH 50V 200MA SOT-23
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 200mA (Ta) | - | 1.5V @ 1mA | - | 50 pF @ 25 V | - | - | - | 3.5Ohm @ 200mA, 5V | - | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
TRENCH 40<-<100V PG-TO220-3
|
封装: - |
库存660 |
|
MOSFET (Metal Oxide) | 60 V | 39A (Ta), 198A (Tc) | 6V, 10V | 3.3V @ 246µA | 305 nC @ 10 V | 13800 pF @ 30 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 1.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-U05 | TO-220-3 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
T8 80V N-CH LL IN LFPAK33 PACKAG
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 10A (Ta), 40A (Tc) | 4.5V, 10V | 2.2V @ 45µA | 1.4 nC @ 10 V | 891 pF @ 40 V | ±20V | - | 3W (Ta), 54W (Tc) | 13.9mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
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STMicroelectronics |
MOSFET N-CH 600V 33A TOLL
|
封装: - |
库存2,184 |
|
MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 4.75V @ 250µA | 72.5 nC @ 10 V | 3400 pF @ 100 V | ±25V | - | 150W (Tc) | 59mOhm @ 23.75A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TOLL (HV) | 8-PowerSFN |
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GeneSiC Semiconductor |
SIC MOSFET N-CH 4A TO263-7
|
封装: - |
库存11,016 |
|
SiCFET (Silicon Carbide) | 3300 V | 4A (Tc) | 20V | 3.5V @ 2mA | 21 nC @ 20 V | 238 pF @ 1000 V | +20V, -5V | - | 74W (Tc) | 1.2Ohm @ 2A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |