图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 25V 28A S3
|
封装: DirectFET? Isometric S3C |
库存5,712 |
|
MOSFET (Metal Oxide) | 25V | 28A (Ta), 125A (Tc) | 4.5V, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | ±16V | - | 2.1W (Ta), 42W (Tc) | 1.7 mOhm @ 28A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? S3C | DirectFET? Isometric S3C |
||
Infineon Technologies |
MOSFET N-CH 25V 22A DIRECTFET-SQ
|
封装: DirectFET? Isometric SQ |
库存189,360 |
|
MOSFET (Metal Oxide) | 25V | 22A (Ta), 95A (Tc) | 4.5V, 10V | 2.4V @ 50µA | 32nC @ 4.5V | 2880pF @ 13V | ±20V | - | 2.2W (Ta), 42W (Tc) | 3 mOhm @ 22A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? SQ | DirectFET? Isometric SQ |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 20A 8DFN
|
封装: 8-PowerSMD, Flat Leads |
库存5,824 |
|
MOSFET (Metal Oxide) | 30V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 33nC @ 10V | 2200pF @ 15V | ±20V | - | 3.1W (Ta), 36W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
||
ON Semiconductor |
MOSFET N-CH 250V 0.35A CPH3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存4,528 |
|
MOSFET (Metal Oxide) | 250V | 350mA (Ta) | 2.5V, 4.5V | 1.3V @ 250µA | 2.1nC @ 4.5V | 140pF @ 20V | ±10V | - | 1W (Ta) | 6.5 Ohm @ 170mA, 4.5V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET P-CH 30V 13A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存98,316 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 10V | 3V @ 250µA | 170nC @ 10V | - | ±25V | - | 1.9W (Ta) | 6.8 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Vishay Siliconix |
MOSFET P-CH 100V 19A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,528 |
|
MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | ±20V | - | 3.7W (Ta), 150W (Tc) | 200 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 600V 10A TO-247
|
封装: TO-247-3 |
库存5,472 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4.5V @ 100µA | 59nC @ 10V | 1740pF @ 25V | ±30V | - | 150W (Tc) | 640 mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 55V 120A TO-247
|
封装: TO-247-3 |
库存5,344 |
|
MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4V @ 250µA | 190nC @ 10V | 4400pF @ 25V | ±20V | - | 300W (Tc) | 6 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
HIGH POWER_LEGACY
|
封装: - |
库存5,280 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics America |
MOSFET P-CH 40V 100A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,672 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 320nC @ 10V | 15100pF @ 10V | ±20V | - | 1.8W (Ta), 200W (Tc) | 3.5 mOhm @ 50A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO251-3
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存6,352 |
|
MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 3.5V @ 80µA | 11nC @ 10V | 300pF @ 500V | ±20V | - | 37W (Tc) | 1.2 Ohm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
STMicroelectronics |
MOSFET N-CH 800V 24A TO247-3
|
封装: TO-247-3 |
库存6,016 |
|
MOSFET (Metal Oxide) | 800V | 24A (Tc) | 10V | 5V @ 100µA | 43nC @ 10V | 1530pF @ 100V | ±30V | - | 250W (Tc) | 180 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 92A TSON
|
封装: 8-PowerVDFN |
库存7,728 |
|
MOSFET (Metal Oxide) | 40V | 92A (Tc) | 4.5V, 10V | 2.4V @ 0.2mA | 27nC @ 10V | 2500pF @ 20V | ±20V | - | 960mW (Ta), 81W (Tc) | 3.7 mOhm @ 46A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Rohm Semiconductor |
MOSFET N-CH 800V 10A TO220
|
封装: TO-220-2 Full Pack |
库存14,760 |
|
MOSFET (Metal Oxide) | 800V | 10A (Tc) | 10V | 5V @ 1mA | 62nC @ 10V | 1750pF @ 25V | ±30V | - | 40W (Tc) | 560 mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 37A TO247
|
封装: TO-247-3 |
库存11,112 |
|
MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 5V @ 250µA | 139nC @ 10V | 4302pF @ 100V | ±20V | - | 357W (Tc) | 104 mOhm @ 18.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 12A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存123,360 |
|
MOSFET (Metal Oxide) | 60V | 12A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 40nC @ 10V | 2007pF @ 30V | ±20V | - | 3.1W (Ta) | 11 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 620V 5.5A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存24,012 |
|
MOSFET (Metal Oxide) | 620V | 5.5A (Tc) | 10V | 4.5V @ 50µA | 30nC @ 10V | 875pF @ 50V | ±30V | - | 90W (Tc) | 1.2 Ohm @ 2.8A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET_(75V 120V( PG-HSOF-5
|
封装: - |
库存5,910 |
|
MOSFET (Metal Oxide) | 80 V | 250A (Tj) | 6V, 10V | 3.8V @ 150µA | 125 nC @ 10 V | 8715 pF @ 40 V | ±20V | - | 238W (Tc) | 1.8mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-4 | 5-PowerSFN |
||
Nexperia USA Inc. |
PXP6R1-30QL/SOT8002/MLPAK33
|
封装: - |
库存4,758 |
|
MOSFET (Metal Oxide) | 30 V | 13.5A (Ta), 71.1A (Tc) | 4.5V, 10V | 2V @ 250µA | 116.7 nC @ 10 V | 3800 pF @ 15 V | ±25V | - | 1.8W (Ta), 50W (Tc) | 6.1mOhm @ 13.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | MLPAK33 | 8-PowerVDFN |
||
Diotec Semiconductor |
IC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 1.5A (Tc) | 10V | 4V @ 250µA | 7.9 nC @ 10 V | 156 pF @ 25 V | ±30V | - | 25W (Tc) | 8Ohm @ 750mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Renesas Electronics Corporation |
DUAL N-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
600V 30A TO-220FM, LOW-NOISE POW
|
封装: - |
库存2,880 |
|
MOSFET (Metal Oxide) | 600 V | 30A (Ta) | 10V | 4V @ 1mA | 85 nC @ 10 V | 2100 pF @ 25 V | ±20V | - | 86W (Tc) | 130mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
||
Taiwan Semiconductor Corporation |
600V, 3A, SINGLE N-CHANNEL POWER
|
封装: - |
库存44,970 |
|
MOSFET (Metal Oxide) | 600 V | 3A (Tc) | 10V | 5V @ 1mA | 7.6 nC @ 10 V | 242 pF @ 25 V | ±20V | - | 39W (Tc) | 1.5Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPAK, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 600V 18A TO263
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 4V @ 250µA | 92 nC @ 10 V | 1640 pF @ 100 V | ±30V | - | 179W (Tc) | 202mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Taiwan Semiconductor Corporation |
-60V, -20A, SINGLE P-CHANNEL POW
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 22.4 nC @ 10 V | 1250 pF @ 30 V | ±20V | - | - | 48mOhm @ 8A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 30V 18A PPAK1212-8
|
封装: - |
库存3 |
|
MOSFET (Metal Oxide) | 30 V | 18A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 24.5 nC @ 10 V | 722 pF @ 15 V | ±20V | Schottky Diode (Body) | 27.7W (Tc) | 13.5mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
||
Diodes Incorporated |
MOSFET N-CH X2-DFN1006-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 750mA (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 0.5 nC @ 4.5 V | 36 pF @ 16 V | ±12V | - | 470mW (Ta) | 550mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
||
Infineon Technologies |
MOSFET N-CH 100V 70A TO263-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 2.4V @ 60µA | 64 nC @ 10 V | 4180 pF @ 25 V | ±20V | - | 100W (Tc) | 15.7mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 500V 18.5A TO247-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 18.5A (Tc) | 13V | 3.5V @ 510µA | 47.2 nC @ 10 V | 1137 pF @ 100 V | ±20V | - | 127W (Tc) | 190mOhm @ 6.2A, 13V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
||
onsemi |
TRENCH 6 30V NCH
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 8.2A (Ta), 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 18.6 nC @ 10 V | 987 pF @ 15 V | ±20V | - | 750mW (Ta), 23.6W (Tc) | 5.88mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |