页 24 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AON6920_001	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 5X6DFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V Power - Max: 2W, 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-DFN (5x6)	封装: 8-PowerWDFN	库存3,600	Standard	30V	15A, 26.5A	5.2 mOhm @ 20A, 10V	2.3V @ 250µA	21nC @ 10V	1560pF @ 15V	2W, 2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-DFN (5x6)
2N7335	Microsemi Corporation	MOSFET 4P-CH 100V 0.75A MO-036AB FET Type: 4 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	封装: 14-DIP (0.300", 7.62mm)	库存6,504	Standard	100V	750mA	1.4 Ohm @ 500mA, 10V	4V @ 250µA	-	-	1.4W	-55°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	MO-036AB
TPCL4203(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 4CHIPLGA FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XLGA Supplier Device Package: 4-Chip LGA	封装: 4-XLGA	库存96,000	Standard	-	-	-	1.2V @ 200µA	-	685pF @ 10V	500mW	150°C (TJ)	Surface Mount	4-XLGA	4-Chip LGA
SIA911EDJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 101 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封装: PowerPAK? SC-70-6 Dual	库存24,000	Logic Level Gate	20V	4.5A	101 mOhm @ 2.7A, 4.5V	1V @ 250µA	11nC @ 8V	-	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
FDS4895C	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.4A Rds On (Max) @ Id, Vgs: 39 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 20V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,496	Standard	40V	5.5A, 4.4A	39 mOhm @ 5.5A, 10V	5V @ 250µA	10nC @ 10V	410pF @ 20V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDW2507N	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.5A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存3,088	Logic Level Gate	20V	7.5A	19 mOhm @ 7.5A, 4.5V	1.5V @ 250µA	28nC @ 4.5V	2152pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI7972DP-T1-GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 60V 8A SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V Power - Max: 22W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存3,632	Standard	30V	8A (Tc)	18 mOhm @ 11A, 10V	2.7V @ 250µA	11nC @ 4.5V	1050pF @ 30V	22W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI5513CDC-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封装: 8-SMD, Flat Lead	库存21,960	Logic Level Gate	20V	4A, 3.7A	55 mOhm @ 4.3A, 4.5V	1.5V @ 250µA	4.2nC @ 5V	285pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SMA5131	Sanken	MOSFET 3N/3P-CH 250V 2A 12-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	封装: 12-SIP, Exposed Tab	库存6,384	Standard	250V	2A	-	-	-	-	-	-	Through Hole	12-SIP, Exposed Tab	12-SIP
DMN2013UFX-7	Diodes Incorporated	MOSFET 2N-CH 20V 10A 6-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V Power - Max: 780mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VFDFN Exposed Pad Supplier Device Package: W-DFN5020-6	封装: 6-VFDFN Exposed Pad	库存3,472	Logic Level Gate	20V	10A	11.5 mOhm @ 8.5A, 4.5V	1.1V @ 250µA	57.4nC @ 8V	2607pF @ 10V	780mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VFDFN Exposed Pad	W-DFN5020-6
UM6K34NTCN	Rohm Semiconductor	MOSFET 2N-CH 50V 0.2A UMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 0.9V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封装: 6-TSSOP, SC-88, SOT-363	库存9,108	Logic Level Gate, 0.9V Drive	50V	200mA	2.2 Ohm @ 200mA, 4.5V	800mV @ 1mA	-	26pF @ 10V	120mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
BSO150N03MD G	Infineon Technologies	MOSFET 2N-CH 30V 8A 8DSO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封装: 8-SOIC (0.154", 3.90mm Width)	库存17,088	Logic Level Gate	30V	8A	15 mOhm @ 9.3A, 10V	2V @ 250µA	17nC @ 10V	1300pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
SI7220DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 3.4A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存282,372	Logic Level Gate	60V	3.4A	60 mOhm @ 4.8A, 10V	3V @ 250µA	20nC @ 10V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
FDG6322C	Fairchild/ON Semiconductor	MOSFET N/P-CH 25V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	封装: 6-TSSOP, SC-88, SOT-363	库存770,712	Logic Level Gate	25V	220mA, 410mA	4 Ohm @ 220mA, 4.5V	1.5V @ 250µA	0.4nC @ 4.5V	9.5pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
MCQ4559A-TP	Micro Commercial Co	MOSFET N/P-CH 60V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.62nC @ 10V, 4.27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V, 505pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	60V	4.5A, 3.5A	45mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V	2.5V @ 250µA	20.62nC @ 10V, 4.27nC @ 4.5V	850pF @ 25V, 505pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
KFC4B22690L	Nuvoton Technology Corporation	MOSFET 20V 3.4A 4CSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 426pF @ 10V Power - Max: 420mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-XFLGA, CSP Supplier Device Package: 4-CSP (1.1x1.1)	封装: -	Request a Quote	-	20V	3.4A (Ta)	32mOhm @ 1.7A, 4.5V	1.4V @ 160µA	4.5nC @ 4V	426pF @ 10V	420mW (Ta)	150°C	Surface Mount	4-XFLGA, CSP	4-CSP (1.1x1.1)
APTMC120HM17CT3AG	Microchip Technology	SIC 4N-CH 1200V 147A SP3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 147A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 4V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 332nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5576pF @ 1000V Power - Max: 750W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3	封装: -	Request a Quote	-	1200V (1.2kV)	147A (Tc)	17mOhm @ 100A, 20V	4V @ 30mA	332nC @ 5V	5576pF @ 1000V	750W	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3
FDMC0225	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BUK7K6R8-40E-1X	Nexperia USA Inc.	MOSFET 40V 40A LFPAK56D FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V Power - Max: 64W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	Request a Quote	-	40V	40A (Ta)	6.8mOhm @ 20A, 10V	4V @ 1mA	28.9nC @ 10V	1947pF @ 25V	64W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
AON7934_102	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 13A/16A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN-EP (3x3)	封装: -	Request a Quote	-	30V	13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)	10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V	2.2V @ 250µA	11nC @ 10V, 17.5nC @ 10V	485pF @ 15V, 807pF @ 15V	2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN-EP (3x3)
MCQ03N06-TP-HF	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 30V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	60V	3A	105mOhm @ 3A, 10V	1.4V @ 250µA	6nC @ 4.5V	247pF @ 30V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PJX8872B_R1_00001	Panjit International Inc.	MOSFET 2N-CH 60V 0.2A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存11,850	-	60V	200mA (Ta)	3Ohm @ 600mA, 10V	2.5V @ 250µA	0.82nC @ 4.5V	34pF @ 25V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMP3165SVTQ-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 287pF @ 15V Power - Max: 1.08W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	30V	2.7A (Ta)	95mOhm @ 2.7A, 10V	2.2V @ 250µA	6.8nC @ 10V	287pF @ 15V	1.08W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
NVXR17S90M2SPB	onsemi	SIC 900V 8D MOSFET V-SSDC SPB FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 620A (Tj) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 620A, 18V Vgs(th) (Max) @ Id: 4.3V @ 200mA Gate Charge (Qg) (Max) @ Vgs: 2400nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 400V Power - Max: 1kW (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SSDC39	封装: -	Request a Quote	-	900V	620A (Tj)	2.1mOhm @ 620A, 18V	4.3V @ 200mA	2400nC @ 18V	45000pF @ 400V	1kW (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SSDC39
SI2429DW-TP	Micro Commercial Co	MOSFET 20V 1.5A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A Rds On (Max) @ Id, Vgs: 90mOhm @ 1A, 4.5V, 150mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.98nC @ 4.5V, 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 202pF @ 10V, 223pF @ 10V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	20V	1.5A, 1A	90mOhm @ 1A, 4.5V, 150mOhm @ 1A, 4.5V	1V @ 250µA	2.98nC @ 4.5V, 3nC @ 4.5V	202pF @ 10V, 223pF @ 10V	450mW	-55°C ~ 150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
IRF7555TR	Infineon Technologies	MOSFET 2P-CH 20V 4.3A MICRO8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8™	封装: -	Request a Quote	Logic Level Gate	20V	4.3A	55mOhm @ 4.3A, 4.5V	1.2V @ 250µA	15nC @ 5V	1066pF @ 10V	1.25W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8™
PJS6834_S2_00001	Panjit International Inc.	MOSFET 2N-CH 20V 0.75A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	封装: -	Request a Quote	-	20V	750mA (Ta)	400mOhm @ 600mA, 4.5V	900mV @ 250µA	1.4nC @ 4.5V	67pF @ 10V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
NTMFD4C820NAT1G	onsemi	NFET SO8FL 30V 27A 3.4MOH FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 13.7A (Ta) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V, 3.4mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V, 1950pF @ 15V Power - Max: 1.09W (Ta), 1.15W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	封装: -	Request a Quote	-	30V	9.1A (Ta), 13.7A (Ta)	7.3mOhm @ 10A, 10V, 3.4mOhm @ 20A, 10V	2.1V @ 250µA	19nC @ 10V, 29nC @ 10V	970pF @ 15V, 1950pF @ 15V	1.09W (Ta), 1.15W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
EFC2J013NUZTDG	onsemi	MOSFET 2N-CH 6WLCSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.8W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-WLCSP (2x1.49)	封装: -	Request a Quote	-	-	-	-	1.3V @ 1mA	37nC @ 4.5V	-	1.8W (Ta)	150°C (TJ)	Surface Mount	6-SMD, No Lead	6-WLCSP (2x1.49)
HAT2210RWS-E	Renesas Electronics Corporation	MOSFET 2N-CH 30V 7.5A/8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V, 1330pF @ 10V Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	Logic Level Gate, 4.5V Drive	30V	7.5A (Ta), 8A (Ta)	24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V	2.5V @ 1mA	4.6nC @ 4.5V, 11nC @ 4.5V	630pF @ 10V, 1330pF @ 10V	1.5W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP

AON6920_001

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 5X6DFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
Power - Max: 2W, 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-DFN (5x6)

封装: 8-PowerWDFN

库存3,600

Standard

30V

15A, 26.5A

5.2 mOhm @ 20A, 10V

2.3V @ 250µA

21nC @ 10V

1560pF @ 15V

2W, 2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-DFN (5x6)

2N7335

Microsemi Corporation

MOSFET 4P-CH 100V 0.75A MO-036AB

FET Type: 4 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: MO-036AB

封装: 14-DIP (0.300", 7.62mm)

库存6,504

Standard

100V

750mA

1.4 Ohm @ 500mA, 10V

4V @ 250µA

-

1.4W

-55°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

MO-036AB

TPCL4203(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 10V
Power - Max: 500mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XLGA
Supplier Device Package: 4-Chip LGA

封装: 4-XLGA

库存96,000

Standard

-

1.2V @ 200µA

-

685pF @ 10V

500mW

150°C (TJ)

Surface Mount

4-XLGA

4-Chip LGA

SIA911EDJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 101 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封装: PowerPAK? SC-70-6 Dual

库存24,000

Logic Level Gate

20V

4.5A

101 mOhm @ 2.7A, 4.5V

1V @ 250µA

11nC @ 8V

-

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

FDS4895C

Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.4A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 20V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,496

Standard

40V

5.5A, 4.4A

39 mOhm @ 5.5A, 10V

5V @ 250µA

10nC @ 10V

410pF @ 20V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDW2507N

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8-TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存3,088

Logic Level Gate

20V

7.5A

19 mOhm @ 7.5A, 4.5V

1.5V @ 250µA

28nC @ 4.5V

2152pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI7972DP-T1-GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 60V 8A SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
Power - Max: 22W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存3,632

Standard

30V

8A (Tc)

18 mOhm @ 11A, 10V

2.7V @ 250µA

11nC @ 4.5V

1050pF @ 30V

22W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI5513CDC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 4A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封装: 8-SMD, Flat Lead

库存21,960

Logic Level Gate

20V

4A, 3.7A

55 mOhm @ 4.3A, 4.5V

1.5V @ 250µA

4.2nC @ 5V

285pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SMA5131

Sanken

MOSFET 3N/3P-CH 250V 2A 12-SIP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

封装: 12-SIP, Exposed Tab

库存6,384

Standard

250V

2A

-

Through Hole

12-SIP, Exposed Tab

12-SIP

DMN2013UFX-7

Diodes Incorporated

MOSFET 2N-CH 20V 10A 6-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V
Power - Max: 780mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VFDFN Exposed Pad
Supplier Device Package: W-DFN5020-6

封装: 6-VFDFN Exposed Pad

库存3,472

Logic Level Gate

20V

10A

11.5 mOhm @ 8.5A, 4.5V

1.1V @ 250µA

57.4nC @ 8V

2607pF @ 10V

780mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VFDFN Exposed Pad

W-DFN5020-6

UM6K34NTCN

Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A UMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 0.9V Drive
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
Power - Max: 120mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封装: 6-TSSOP, SC-88, SOT-363

库存9,108

Logic Level Gate, 0.9V Drive

50V

200mA

2.2 Ohm @ 200mA, 4.5V

800mV @ 1mA

-

26pF @ 10V

120mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

BSO150N03MD G

Infineon Technologies

MOSFET 2N-CH 30V 8A 8DSO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

库存17,088

Logic Level Gate

30V

8A

15 mOhm @ 9.3A, 10V

2V @ 250µA

17nC @ 10V

1300pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

SI7220DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 3.4A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存282,372

Logic Level Gate

60V

3.4A

60 mOhm @ 4.8A, 10V

3V @ 250µA

20nC @ 10V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

FDG6322C

Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

封装: 6-TSSOP, SC-88, SOT-363

库存770,712

Logic Level Gate

25V

220mA, 410mA

4 Ohm @ 220mA, 4.5V

1.5V @ 250µA

0.4nC @ 4.5V

9.5pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

MCQ4559A-TP

Micro Commercial Co

MOSFET N/P-CH 60V 4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.62nC @ 10V, 4.27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V, 505pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

Request a Quote

-

60V

4.5A, 3.5A

45mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V

2.5V @ 250µA

20.62nC @ 10V, 4.27nC @ 4.5V

850pF @ 25V, 505pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

KFC4B22690L

Nuvoton Technology Corporation

MOSFET 20V 3.4A 4CSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 426pF @ 10V
Power - Max: 420mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-XFLGA, CSP
Supplier Device Package: 4-CSP (1.1x1.1)

封装: -

Request a Quote

-

20V

3.4A (Ta)

32mOhm @ 1.7A, 4.5V

1.4V @ 160µA

4.5nC @ 4V

426pF @ 10V

420mW (Ta)

150°C

Surface Mount

4-XFLGA, CSP

4-CSP (1.1x1.1)

APTMC120HM17CT3AG

Microchip Technology

SIC 4N-CH 1200V 147A SP3

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 147A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 332nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 5576pF @ 1000V
Power - Max: 750W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3

封装: -

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1200V (1.2kV)

147A (Tc)

17mOhm @ 100A, 20V

4V @ 30mA

332nC @ 5V

5576pF @ 1000V

750W

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3

FDMC0225

Fairchild Semiconductor

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

BUK7K6R8-40E-1X

Nexperia USA Inc.

MOSFET 40V 40A LFPAK56D

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
Power - Max: 64W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

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-

40V

40A (Ta)

6.8mOhm @ 20A, 10V

4V @ 1mA

28.9nC @ 10V

1947pF @ 25V

64W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

AON7934_102

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 13A/16A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN-EP (3x3)

封装: -

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30V

13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)

10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V

2.2V @ 250µA

11nC @ 10V, 17.5nC @ 10V

485pF @ 15V, 807pF @ 15V

2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN-EP (3x3)

MCQ03N06-TP-HF

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 30V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

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-

60V

3A

105mOhm @ 3A, 10V

1.4V @ 250µA

6nC @ 4.5V

247pF @ 30V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PJX8872B_R1_00001

Panjit International Inc.

MOSFET 2N-CH 60V 0.2A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存11,850

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60V

200mA (Ta)

3Ohm @ 600mA, 10V

2.5V @ 250µA

0.82nC @ 4.5V

34pF @ 25V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMP3165SVTQ-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 287pF @ 15V
Power - Max: 1.08W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

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30V

2.7A (Ta)

95mOhm @ 2.7A, 10V

2.2V @ 250µA

6.8nC @ 10V

287pF @ 15V

1.08W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

NVXR17S90M2SPB

onsemi

SIC 900V 8D MOSFET V-SSDC SPB

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 620A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 620A, 18V
Vgs(th) (Max) @ Id: 4.3V @ 200mA
Gate Charge (Qg) (Max) @ Vgs: 2400nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 400V
Power - Max: 1kW (Tj)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SSDC39

封装: -

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900V

620A (Tj)

2.1mOhm @ 620A, 18V

4.3V @ 200mA

2400nC @ 18V

45000pF @ 400V

1kW (Tj)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SSDC39

SI2429DW-TP

Micro Commercial Co

MOSFET 20V 1.5A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
Rds On (Max) @ Id, Vgs: 90mOhm @ 1A, 4.5V, 150mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.98nC @ 4.5V, 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 202pF @ 10V, 223pF @ 10V
Power - Max: 450mW
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

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20V

1.5A, 1A

90mOhm @ 1A, 4.5V, 150mOhm @ 1A, 4.5V

1V @ 250µA

2.98nC @ 4.5V, 3nC @ 4.5V

202pF @ 10V, 223pF @ 10V

450mW

-55°C ~ 150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

IRF7555TR

Infineon Technologies

MOSFET 2P-CH 20V 4.3A MICRO8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
Power - Max: 1.25W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8™

封装: -

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Logic Level Gate

20V

4.3A

55mOhm @ 4.3A, 4.5V

1.2V @ 250µA

15nC @ 5V

1066pF @ 10V

1.25W

-

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8™

PJS6834_S2_00001

Panjit International Inc.

MOSFET 2N-CH 20V 0.75A SOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

封装: -

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20V

750mA (Ta)

400mOhm @ 600mA, 4.5V

900mV @ 250µA

1.4nC @ 4.5V

67pF @ 10V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

NTMFD4C820NAT1G

onsemi

NFET SO8FL 30V 27A 3.4MOH

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V, 3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V, 1950pF @ 15V
Power - Max: 1.09W (Ta), 1.15W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

封装: -

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30V

9.1A (Ta), 13.7A (Ta)

7.3mOhm @ 10A, 10V, 3.4mOhm @ 20A, 10V

2.1V @ 250µA

19nC @ 10V, 29nC @ 10V

970pF @ 15V, 1950pF @ 15V

1.09W (Ta), 1.15W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

EFC2J013NUZTDG

onsemi

MOSFET 2N-CH 6WLCSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.8W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-WLCSP (2x1.49)

封装: -

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-

1.3V @ 1mA

37nC @ 4.5V

-

1.8W (Ta)

150°C (TJ)

Surface Mount

6-SMD, No Lead

6-WLCSP (2x1.49)

HAT2210RWS-E

Renesas Electronics Corporation

MOSFET 2N-CH 30V 7.5A/8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V, 1330pF @ 10V
Power - Max: 1.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

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Logic Level Gate, 4.5V Drive

30V

7.5A (Ta), 8A (Ta)

24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V

2.5V @ 1mA

4.6nC @ 4.5V, 11nC @ 4.5V

630pF @ 10V, 1330pF @ 10V

1.5W (Ta)

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP