页 26 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2N7002DW L6327	Infineon Technologies	MOSFET 2N-CH 60V 0.3A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存72,000	Logic Level Gate	60V	300mA	3 Ohm @ 500mA, 10V	2.5V @ 250µA	0.6nC @ 10V	20pF @ 25V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
IRF7751TR	Infineon Technologies	MOSFET 2P-CH 30V 4.5A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存2,512	Logic Level Gate	30V	4.5A	35 mOhm @ 4.5A, 10V	2.5V @ 250µA	44nC @ 10V	1464pF @ 25V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
ECH8601M-P-TL-H	ON Semiconductor	MOSFET 2N-CH ECH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,880	-	-	-	-	-	-	-	-	-	-	-	-
AO4822AL	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,024	Logic Level Gate	30V	8A	19 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SMMB911DK-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 2.6A SC75-6L FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-75-6L Dual Supplier Device Package: PowerPAK? SC-75-6L Dual	封装: PowerPAK? SC-75-6L Dual	库存7,168	Standard	20V	2.6A	295 mOhm @ 1.5A, 4.5V	1V @ 250µA	4nC @ 8V	115pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Dual	PowerPAK? SC-75-6L Dual
SP8M6FU6TB	Rohm Semiconductor	MOSFET N/P-CH 30V 5A/3.5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,792	Logic Level Gate	30V	5A, 3.5A	51 mOhm @ 5A, 10V	2.5V @ 1mA	3.9nC @ 5V	230pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDW2508PB	Fairchild/ON Semiconductor	MOSFET 2P-CH 12V 6A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3775pF @ 6V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存33,924	Logic Level Gate	12V	6A	18 mOhm @ 6A, 4.5V	1.5V @ 250µA	45nC @ 4.5V	3775pF @ 6V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
PMWD30UN,518	NXP	MOSFET 2N-CH 30V 5A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 33 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存6,192	Logic Level Gate	30V	5A	33 mOhm @ 3.5A, 4.5V	700mV @ 1mA	28nC @ 5V	1478pF @ 10V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
ALD212900SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 14 Ohm Vgs(th) (Max) @ Id: 20mV @ 20µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,240	Logic Level Gate	10.6V	80mA	14 Ohm	20mV @ 20µA	-	30pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
HUFA76413DK8T_F085	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 5.1A 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,696	Logic Level Gate	60V	5.1A	49 mOhm @ 5.1A, 10V	3V @ 250µA	23nC @ 10V	620pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AON6908A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 11.5A/17A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A, 17A Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V Power - Max: 1.9W, 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	封装: 8-PowerVDFN	库存13,884	Logic Level Gate	30V	11.5A, 17A	8.9 mOhm @ 11.5A, 10V	2.4V @ 250µA	15nC @ 10V	1110pF @ 15V	1.9W, 2.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
NVMFD5877NLWFT1G	ON Semiconductor	MOSFET 2N-CH 60V 6A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power - Max: 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	封装: 8-PowerTDFN	库存3,520	Logic Level Gate	60V	6A	39 mOhm @ 7.5A, 10V	3V @ 250µA	20nC @ 10V	540pF @ 25V	3.2W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
HP8S36TB	Rohm Semiconductor	30V NCH+NCH MIDDLE POWER MOSFET, FET Type: 2 N-Channel (Half Bridge) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A, 80A Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V Power - Max: 29W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	封装: 8-PowerTDFN	库存2,544	-	30V	27A, 80A	2.4 mOhm @ 32A, 10V	2.5V @ 1mA	47nC @ 4.5V	6100pF @ 15V	29W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
AO4622	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 20V 7.3A/5A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存127,200	Logic Level Gate	20V	-	23 mOhm @ 7.3A, 10V	2V @ 250µA	18nC @ 10V	1100pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SLA5061	Sanken	MOSFET 3N/3P-CH 60V 10A/6A 12SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A, 6A Rds On (Max) @ Id, Vgs: 140 mOhm @ 5A, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP Supplier Device Package: 12-SIP	封装: 12-SIP	库存5,840	Logic Level Gate	60V	10A, 6A	140 mOhm @ 5A, 4V	-	-	460pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP	12-SIP
SI8902EDB-T2-E1	Vishay Siliconix	MOSFET 2N-CH 20V 3.9A 6-MFP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1V @ 980µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-MICRO FOOT?CSP Supplier Device Package: 6-Micro Foot?	封装: 6-MICRO FOOT?CSP	库存826,728	Logic Level Gate	20V	3.9A	-	1V @ 980µA	-	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-MICRO FOOT?CSP	6-Micro Foot?
SIZ256DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 70V 11.5A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 31.8A (Tc) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 35V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	封装: -	库存9,000	-	70V	11.5A (Ta), 31.8A (Tc)	17.6mOhm @ 7A, 4.5V	1.5V @ 250µA	27nC @ 10V	1060pF @ 35V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
DMC2057UVT-7	Diodes Incorporated	MOSFET N/P-CH 20V 4A/3.3A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	20V	4A (Ta), 3.3A (Ta)	42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V	1.2V @ 250µA, 1V @ 250µA	10.5nC @ 10V, 6.5nC @ 4.5V	416pF @ 10V, 536pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DI018C03PT	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Tc), 18A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V, 30.1mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1122pF @ 15V, 1150pF @ 20V Power - Max: 10.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-QFN (3x3)	封装: -	Request a Quote	-	30V	27A (Tc), 18A (Tc)	9.3mOhm @ 15A, 10V, 30.1mOhm @ 10A, 10V	2.5V @ 250µA	12nC @ 4.5V, 20nC @ 10V	1122pF @ 15V, 1150pF @ 20V	10.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-QFN (3x3)
PMCM650CVNEZ	Nexperia USA Inc.	PMCM650CVNE/NAX000/NONE FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FDMS7696A	Fairchild Semiconductor	MOSFET N-CH 30V 13.2A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SIX3439K-TP	Micro Commercial Co	MOSFET N/P-CH 20V 0.75A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V, 170pF @ 16V Power - Max: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存321,789	Logic Level Gate	20V	750mA, 660mA	380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V	1V @ 250µA, 1.1V @ 250µA	-	120pF @ 16V, 170pF @ 16V	-	150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
UC2705D-81278	Unitrode	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
TSM6963SDCA	Taiwan Semiconductor Corporation	MOSFET 2P-CH 20V 4.5A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Power - Max: 1.14W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: -	Request a Quote	-	20V	4.5A (Ta)	30mOhm @ 4.5A, 4.5V	1V @ 250µA	20nC @ 4.5V	1500pF @ 10V	1.14W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NVMJD3D0N04CTWG	onsemi	MOSFET N-CH 40V LFPACK57 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
KFC4B21320L	Nuvoton Technology Corporation	MOSFET 12V 2.5A 4CSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 1.25A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 10V Power - Max: 340mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-XFLGA, CSP Supplier Device Package: 4-CSP (0.8x0.8)	封装: -	Request a Quote	-	12V	2.5A (Ta)	48mOhm @ 1.25A, 4.5V	1.4V @ 70µA	3.5nC @ 4V	205pF @ 10V	340mW (Ta)	150°C	Surface Mount	4-XFLGA, CSP	4-CSP (0.8x0.8)
DMP4011SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120TLM11CAG	Microchip Technology	SIC 4N-CH 1200V 251A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V Power - Max: 1042W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	封装: -	Request a Quote	-	1200V (1.2kV)	251A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 3mA	696nC @ 20V	9000pF @ 1000V	1042W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
ITD50N04S4L07ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.2V @ 18µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V Power - Max: 46W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD Supplier Device Package: PG-TO252-5-311	封装: -	Request a Quote	Logic Level Gate	40V	50A (Tc)	7.2mOhm @ 50A, 10V	2.2V @ 18µA	33nC @ 10V	2480pF @ 25V	46W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-5, DPAK (4 Leads + Tab), TO-252AD	PG-TO252-5-311
AOCA72104E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 30A 10DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-AlphaDFN (2.98x1.49)	封装: -	Request a Quote	-	12V	30A (Ta)	2.6mOhm @ 5A, 4.5V	1.3V @ 250µA	45nC @ 4.5V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	10-AlphaDFN (2.98x1.49)

2N7002DW L6327

Infineon Technologies

MOSFET 2N-CH 60V 0.3A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存72,000

Logic Level Gate

60V

300mA

3 Ohm @ 500mA, 10V

2.5V @ 250µA

0.6nC @ 10V

20pF @ 25V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

IRF7751TR

Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存2,512

Logic Level Gate

30V

4.5A

35 mOhm @ 4.5A, 10V

2.5V @ 250µA

44nC @ 10V

1464pF @ 25V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

ECH8601M-P-TL-H

ON Semiconductor

MOSFET 2N-CH ECH8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,880

-

AO4822AL

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,024

Logic Level Gate

30V

8A

19 mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SMMB911DK-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 2.6A SC75-6L

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-75-6L Dual
Supplier Device Package: PowerPAK? SC-75-6L Dual

封装: PowerPAK? SC-75-6L Dual

库存7,168

Standard

20V

2.6A

295 mOhm @ 1.5A, 4.5V

1V @ 250µA

4nC @ 8V

115pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-75-6L Dual

SP8M6FU6TB

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/3.5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A
Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,792

Logic Level Gate

30V

5A, 3.5A

51 mOhm @ 5A, 10V

2.5V @ 1mA

3.9nC @ 5V

230pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDW2508PB

Fairchild/ON Semiconductor

MOSFET 2P-CH 12V 6A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3775pF @ 6V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存33,924

Logic Level Gate

12V

6A

18 mOhm @ 6A, 4.5V

1.5V @ 250µA

45nC @ 4.5V

3775pF @ 6V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

PMWD30UN,518

NXP

MOSFET 2N-CH 30V 5A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存6,192

Logic Level Gate

30V

5A

33 mOhm @ 3.5A, 4.5V

700mV @ 1mA

28nC @ 5V

1478pF @ 10V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

ALD212900SAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 14 Ohm
Vgs(th) (Max) @ Id: 20mV @ 20µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,240

Logic Level Gate

10.6V

80mA

14 Ohm

20mV @ 20µA

-

30pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

HUFA76413DK8T_F085

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 5.1A 8-SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,696

Logic Level Gate

60V

5.1A

49 mOhm @ 5.1A, 10V

3V @ 250µA

23nC @ 10V

620pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AON6908A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 11.5A/17A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.5A, 17A
Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
Power - Max: 1.9W, 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

封装: 8-PowerVDFN

库存13,884

Logic Level Gate

30V

11.5A, 17A

8.9 mOhm @ 11.5A, 10V

2.4V @ 250µA

15nC @ 10V

1110pF @ 15V

1.9W, 2.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

NVMFD5877NLWFT1G

ON Semiconductor

MOSFET 2N-CH 60V 6A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

封装: 8-PowerTDFN

库存3,520

Logic Level Gate

60V

6A

39 mOhm @ 7.5A, 10V

3V @ 250µA

20nC @ 10V

540pF @ 25V

3.2W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

HP8S36TB

Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET,

FET Type: 2 N-Channel (Half Bridge)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A, 80A
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V
Power - Max: 29W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

封装: 8-PowerTDFN

库存2,544

-

30V

27A, 80A

2.4 mOhm @ 32A, 10V

2.5V @ 1mA

47nC @ 4.5V

6100pF @ 15V

29W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

AO4622

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 20V 7.3A/5A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存127,200

Logic Level Gate

20V

-

23 mOhm @ 7.3A, 10V

2V @ 250µA

18nC @ 10V

1100pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SLA5061

Sanken

MOSFET 3N/3P-CH 60V 10A/6A 12SIP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A, 6A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 5A, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Power - Max: 5W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP
Supplier Device Package: 12-SIP

封装: 12-SIP

库存5,840

Logic Level Gate

60V

10A, 6A

140 mOhm @ 5A, 4V

-

460pF @ 10V

5W

150°C (TJ)

Through Hole

12-SIP

SI8902EDB-T2-E1

Vishay Siliconix

MOSFET 2N-CH 20V 3.9A 6-MFP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1V @ 980µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-MICRO FOOT?CSP
Supplier Device Package: 6-Micro Foot?

封装: 6-MICRO FOOT?CSP

库存826,728

Logic Level Gate

20V

3.9A

-

1V @ 980µA

-

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-MICRO FOOT?CSP

6-Micro Foot?

SIZ256DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 70V 11.5A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 31.8A (Tc)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 35V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

封装: -

库存9,000

-

70V

11.5A (Ta), 31.8A (Tc)

17.6mOhm @ 7A, 4.5V

1.5V @ 250µA

27nC @ 10V

1060pF @ 35V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

DMC2057UVT-7

Diodes Incorporated

MOSFET N/P-CH 20V 4A/3.3A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

Request a Quote

-

20V

4A (Ta), 3.3A (Ta)

42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V

1.2V @ 250µA, 1V @ 250µA

10.5nC @ 10V, 6.5nC @ 4.5V

416pF @ 10V, 536pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DI018C03PT

Diotec Semiconductor

IC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V, 30.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1122pF @ 15V, 1150pF @ 20V
Power - Max: 10.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-QFN (3x3)

封装: -

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-

30V

27A (Tc), 18A (Tc)

9.3mOhm @ 15A, 10V, 30.1mOhm @ 10A, 10V

2.5V @ 250µA

12nC @ 4.5V, 20nC @ 10V

1122pF @ 15V, 1150pF @ 20V

10.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-QFN (3x3)

PMCM650CVNEZ

Nexperia USA Inc.

PMCM650CVNE/NAX000/NONE

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

FDMS7696A

Fairchild Semiconductor

MOSFET N-CH 30V 13.2A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

SIX3439K-TP

Micro Commercial Co

MOSFET N/P-CH 20V 0.75A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V, 170pF @ 16V
Power - Max: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存321,789

Logic Level Gate

20V

750mA, 660mA

380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V

1V @ 250µA, 1.1V @ 250µA

-

120pF @ 16V, 170pF @ 16V

-

150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

UC2705D-81278

Unitrode

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

TSM6963SDCA

Taiwan Semiconductor Corporation

MOSFET 2P-CH 20V 4.5A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Power - Max: 1.14W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: -

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-

20V

4.5A (Ta)

30mOhm @ 4.5A, 4.5V

1V @ 250µA

20nC @ 4.5V

1500pF @ 10V

1.14W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

NVMJD3D0N04CTWG

onsemi

MOSFET N-CH 40V LFPACK57

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

KFC4B21320L

Nuvoton Technology Corporation

MOSFET 12V 2.5A 4CSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 1.25A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 10V
Power - Max: 340mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-XFLGA, CSP
Supplier Device Package: 4-CSP (0.8x0.8)

封装: -

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-

12V

2.5A (Ta)

48mOhm @ 1.25A, 4.5V

1.4V @ 70µA

3.5nC @ 4V

205pF @ 10V

340mW (Ta)

150°C

Surface Mount

4-XFLGA, CSP

4-CSP (0.8x0.8)

DMP4011SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

MSCSM120TLM11CAG

Microchip Technology

SIC 4N-CH 1200V 251A SP6C

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Power - Max: 1042W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C

封装: -

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-

1200V (1.2kV)

251A (Tc)

10.4mOhm @ 120A, 20V

2.8V @ 3mA

696nC @ 20V

9000pF @ 1000V

1042W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C

ITD50N04S4L07ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 18µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Power - Max: 46W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package: PG-TO252-5-311

封装: -

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Logic Level Gate

40V

50A (Tc)

7.2mOhm @ 50A, 10V

2.2V @ 18µA

33nC @ 10V

2480pF @ 25V

46W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-5, DPAK (4 Leads + Tab), TO-252AD

PG-TO252-5-311

AOCA72104E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 30A 10DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-AlphaDFN (2.98x1.49)

封装: -

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-

12V

30A (Ta)

2.6mOhm @ 5A, 4.5V

1.3V @ 250µA

45nC @ 4.5V

-

3.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

10-SMD, No Lead

10-AlphaDFN (2.98x1.49)