页 21 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
VEC2616-TL-H-Z	ON Semiconductor	MOSFET N/P-CH 60V 3A/2.5A VEC8 FET Type: N and P-Channel FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: 1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	封装: 8-SMD, Flat Lead	库存3,376	Logic Level Gate, 4V Drive	60V	3A, 2.5A	80 mOhm @ 1.5A, 10V	-	10nC @ 10V	505pF @ 20V	1W	-	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8
TMC1340-SO	Trinamic Motion Control GmbH	MOSFET 2N/2P-CH 30V 8SOIC FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.1A Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V Power - Max: 1.38W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,200	Standard	30V	5.5A, 4.1A	33 mOhm @ 5A, 10V	3V @ 250µA	10nC @ 4.5V	960pF @ 25V	1.38W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7980DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 8A PPAK SO-8 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V Power - Max: 19.8W, 21.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存105,360	Standard	20V	8A	22 mOhm @ 5A, 10V	2.5V @ 250µA	27nC @ 10V	1010pF @ 10V	19.8W, 21.9W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
NTHD4502NT1	ON Semiconductor	MOSFET 2N-CH 30V 2.2A CHIPFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V Power - Max: 640mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	封装: 8-SMD, Flat Lead	库存80,160	Logic Level Gate	30V	2.2A	85 mOhm @ 2.9A, 10V	3V @ 250µA	7nC @ 10V	140pF @ 15V	640mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
FDG6303N_D87Z	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 0.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	封装: 6-TSSOP, SC-88, SOT-363	库存5,408	Logic Level Gate	25V	500mA	450 mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V	50pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
NDS9956A	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 3.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存296,220	Logic Level Gate	30V	3.7A	80 mOhm @ 2.2A, 10V	2.8V @ 250µA	27nC @ 10V	320pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
EFC8811R-TF	ON Semiconductor	MOSFET 2N-CH 6CSP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-CSP (1.77x3.54)	封装: 6-SMD, No Lead	库存2,528	Logic Level Gate, 2.5V Drive	-	-	-	-	-	-	2.5W	150°C (TJ)	Surface Mount	6-SMD, No Lead	6-CSP (1.77x3.54)
NTJD4105CT1G	ON Semiconductor	MOSFET N/P-CH 20V/8V SOT-363 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V, 8V Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存1,445,352	Logic Level Gate	20V, 8V	630mA, 775mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
IPG20N06S415AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封装: 8-PowerVDFN	库存5,680	Standard	60V	20A	15.5 mOhm @ 17A, 10V	4V @ 20µA	29nC @ 10V	2260pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
DMC4015SSD-13	Diodes Incorporated	MOSFET N/P-CH 40V 8.6A/6.5A 8-SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A Rds On (Max) @ Id, Vgs: 15 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,336	Logic Level Gate	40V	8.6A, 6.2A	15 mOhm @ 3A, 10V	3V @ 250µA	40nC @ 10V	1810pF @ 20V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC25D0UVT-7	Diodes Incorporated	MOSFET N/P-CH 25V/30V TSOT26 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 25V, 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: SOT-23-6 Thin, TSOT-23-6	库存2,128	Standard	25V, 30V	400mA, 3.2A	4 Ohm @ 400mA, 4.5V	1.5V @ 250µA	0.7nC @ 8V	26.2pF @ 10V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN61D9UDW-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.35A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存116,616	Standard	60V	350mA	2 Ohm @ 50mA, 5V	1V @ 250µA	0.4nC @ 4.5V	28.5pF @ 30V	320mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
TT8K2TR	Rohm Semiconductor	MOSFET 2N-CH 30V 2.5A TSST8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	封装: 8-SMD, Flat Lead	库存23,250	Logic Level Gate	30V	2.5A	90 mOhm @ 2.5A, 4.5V	1.5V @ 1mA	3.2nC @ 4.5V	180pF @ 10V	1.25W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
ALD1103PBL	Advanced Linear Devices Inc.	MOSFET 2N/2P-CH 10.6V 14DIP FET Type: 2 N and 2 P-Channel Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-PDIP	封装: 14-DIP (0.300", 7.62mm)	库存6,912	Standard	10.6V	40mA, 16mA	75 Ohm @ 5V	1V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-PDIP
FDMQ8203	Fairchild/ON Semiconductor	MOSFET 2N/2P-CH 100V/80V 12-MLP FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V, 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-WDFN Exposed Pad Supplier Device Package: 12-MLP (5x4.5)	封装: 12-WDFN Exposed Pad	库存21,918	Logic Level Gate	100V, 80V	3.4A, 2.6A	110 mOhm @ 3A, 10V	4V @ 250µA	5nC @ 10V	210pF @ 50V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	12-WDFN Exposed Pad	12-MLP (5x4.5)
SP8M24FRATB	Rohm Semiconductor	MOSFET N/P-CH 45V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存6,612	-	45V	4.5A (Ta), 3.5A (Ta)	46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V	2.5V @ 1mA	9.6nC @ 5V, 18.2nC @ 5V	550pF @ 10V, 1700pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FS70UMJ-06F-REN	Renesas Electronics Corporation	MOSFET N-CH 60V 70A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMC3061SVT-13	Diodes Incorporated	MOSFET N/P-CH 30V 3.4A TSOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V Power - Max: 880mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6	封装: -	Request a Quote	-	30V	3.4A (Ta), 2.7A (Ta)	60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V	1.8V @ 250µA, 2.2V @ 250µA	6.6nC @ 10V, 6.8nC @ 10V	278pF @ 15V, 287pF @ 15V	880mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-23-6
FS03MR12A6MA1BBPSA1	Infineon Technologies	SIC 6N-CH 1200V AG-HYBRIDD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V Vgs(th) (Max) @ Id: 5.55V @ 240mA Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-HYBRIDD-2	封装: -	Request a Quote	-	1200V (1.2kV)	400A (Tj)	3.7mOhm @ 400A, 15V	5.55V @ 240mA	1320nC @ 15V	42500pF @ 600V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-HYBRIDD-2
AOE6936	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 55A/85A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V Power - Max: 24W, 39W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (5x6)	封装: -	库存8,757	-	30V	55A (Tc), 85A (Tc)	5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V	2.2V @ 250µA, 2.1V @ 250µA	15nC @ 4.5V, 25nC @ 4.5V	1150pF @ 15V, 2270pF @ 15V	24W, 39W	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (5x6)
DMT3020UFDB-13	Diodes Incorporated	MOSFET 2N-CH 30V 6.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V Power - Max: 860mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: -	Request a Quote	-	30V	6.5A (Ta)	21mOhm @ 6A, 10V	1.7V @ 250µA	8.8nC @ 10V	383pF @ 15V	860mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
MSCSM120TAM16TPAG	Microchip Technology	SIC 6N-CH 1200V 171A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 728W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	171A (Tc)	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	728W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
G05NP06S2	Goford Semiconductor	MOSFET N/P-CH 60V 5A/3.1A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Tc), 3.1A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1336pF @ 30V, 1454pF @ 30V Power - Max: 2.5W (Tc), 1.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存22,470	-	60V	5A (Tc), 3.1A (Tc)	36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V	2V @ 250µA, 2.2V @ 250µA	22nC @ 10V, 37nC @ 10V	1336pF @ 30V, 1454pF @ 30V	2.5W (Tc), 1.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PJL9812_R2_00201	Panjit International Inc.	MOSFET 2N-CH 30V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 421pF @ 15V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存14,889	-	30V	6A (Ta)	35mOhm @ 6A, 10V	1.3V @ 250µA	5.1nC @ 4.5V	421pF @ 15V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
UM6K1N-TP	Micro Commercial Co	MOSFET 2N-CH 30V 0.1A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	30V	100mA	8Ohm @ 10mA, 4V	1.5V @ 100µA	-	13pF @ 5V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
IRF640ACP001	Fairchild Semiconductor	MOSFET N-CH 200V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FW257-TL-E	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN2300UFL4Q-7	Diodes Incorporated	MOSFET 2N-CH 20V 2.11A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta) Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V Power - Max: 530mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: X2-DFN1310-6	封装: -	Request a Quote	-	20V	2.11A (Ta)	195mOhm @ 300mA, 4.5V	950mV @ 250µA	3.2nC @ 4.5V	135.2pF @ 0V	530mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN	X2-DFN1310-6
EPC2101	EPC	GANFET 2N-CH 60V 9.5A/38A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	库存99	-	60V	9.5A, 38A	11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V	2.5V @ 3mA, 2.5V @ 12mA	2.7nC @ 5V, 12nC @ 5V	300pF @ 30V, 1200pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
HP4936DY	Fairchild Semiconductor	MOSFET 2N-CH 30V 5.8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	Logic Level Gate	30V	5.8A (Ta)	37mOhm @ 5.8A, 10V	1V @ 250µA	25nC @ 10V	625pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

VEC2616-TL-H-Z

ON Semiconductor

MOSFET N/P-CH 60V 3A/2.5A VEC8

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Power - Max: 1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

封装: 8-SMD, Flat Lead

库存3,376

Logic Level Gate, 4V Drive

60V

3A, 2.5A

80 mOhm @ 1.5A, 10V

-

10nC @ 10V

505pF @ 20V

1W

-

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8

TMC1340-SO

Trinamic Motion Control GmbH

MOSFET 2N/2P-CH 30V 8SOIC

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.1A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V
Power - Max: 1.38W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,200

Standard

30V

5.5A, 4.1A

33 mOhm @ 5A, 10V

3V @ 250µA

10nC @ 4.5V

960pF @ 25V

1.38W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7980DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 8A PPAK SO-8

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
Power - Max: 19.8W, 21.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存105,360

Standard

20V

8A

22 mOhm @ 5A, 10V

2.5V @ 250µA

27nC @ 10V

1010pF @ 10V

19.8W, 21.9W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

NTHD4502NT1

ON Semiconductor

MOSFET 2N-CH 30V 2.2A CHIPFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V
Power - Max: 640mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

封装: 8-SMD, Flat Lead

库存80,160

Logic Level Gate

30V

2.2A

85 mOhm @ 2.9A, 10V

3V @ 250µA

7nC @ 10V

140pF @ 15V

640mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

FDG6303N_D87Z

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.5A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

封装: 6-TSSOP, SC-88, SOT-363

库存5,408

Logic Level Gate

25V

500mA

450 mOhm @ 500mA, 4.5V

1.5V @ 250µA

2.3nC @ 4.5V

50pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

NDS9956A

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 3.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存296,220

Logic Level Gate

30V

3.7A

80 mOhm @ 2.2A, 10V

2.8V @ 250µA

27nC @ 10V

320pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

EFC8811R-TF

ON Semiconductor

MOSFET 2N-CH 6CSP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-CSP (1.77x3.54)

封装: 6-SMD, No Lead

库存2,528

Logic Level Gate, 2.5V Drive

-

2.5W

150°C (TJ)

Surface Mount

6-SMD, No Lead

6-CSP (1.77x3.54)

NTJD4105CT1G

ON Semiconductor

MOSFET N/P-CH 20V/8V SOT-363

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V, 8V
Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存1,445,352

Logic Level Gate

20V, 8V

630mA, 775mA

375 mOhm @ 630mA, 4.5V

1.5V @ 250µA

3nC @ 4.5V

46pF @ 20V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

IPG20N06S415AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封装: 8-PowerVDFN

库存5,680

Standard

60V

20A

15.5 mOhm @ 17A, 10V

4V @ 20µA

29nC @ 10V

2260pF @ 25V

50W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

DMC4015SSD-13

Diodes Incorporated

MOSFET N/P-CH 40V 8.6A/6.5A 8-SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,336

Logic Level Gate

40V

8.6A, 6.2A

15 mOhm @ 3A, 10V

3V @ 250µA

40nC @ 10V

1810pF @ 20V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC25D0UVT-7

Diodes Incorporated

MOSFET N/P-CH 25V/30V TSOT26

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: SOT-23-6 Thin, TSOT-23-6

库存2,128

Standard

25V, 30V

400mA, 3.2A

4 Ohm @ 400mA, 4.5V

1.5V @ 250µA

0.7nC @ 8V

26.2pF @ 10V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN61D9UDW-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.35A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V
Power - Max: 320mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存116,616

Standard

60V

350mA

2 Ohm @ 50mA, 5V

1V @ 250µA

0.4nC @ 4.5V

28.5pF @ 30V

320mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

TT8K2TR

Rohm Semiconductor

MOSFET 2N-CH 30V 2.5A TSST8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

封装: 8-SMD, Flat Lead

库存23,250

Logic Level Gate

30V

2.5A

90 mOhm @ 2.5A, 4.5V

1.5V @ 1mA

3.2nC @ 4.5V

180pF @ 10V

1.25W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

ALD1103PBL

Advanced Linear Devices Inc.

MOSFET 2N/2P-CH 10.6V 14DIP

FET Type: 2 N and 2 P-Channel Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA
Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-PDIP

封装: 14-DIP (0.300", 7.62mm)

库存6,912

Standard

10.6V

40mA, 16mA

75 Ohm @ 5V

1V @ 10µA

-

10pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

14-PDIP

FDMQ8203

Fairchild/ON Semiconductor

MOSFET 2N/2P-CH 100V/80V 12-MLP

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V, 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-WDFN Exposed Pad
Supplier Device Package: 12-MLP (5x4.5)

封装: 12-WDFN Exposed Pad

库存21,918

Logic Level Gate

100V, 80V

3.4A, 2.6A

110 mOhm @ 3A, 10V

4V @ 250µA

5nC @ 10V

210pF @ 50V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

12-WDFN Exposed Pad

12-MLP (5x4.5)

SP8M24FRATB

Rohm Semiconductor

MOSFET N/P-CH 45V 4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存6,612

-

45V

4.5A (Ta), 3.5A (Ta)

46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V

2.5V @ 1mA

9.6nC @ 5V, 18.2nC @ 5V

550pF @ 10V, 1700pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FS70UMJ-06F-REN

Renesas Electronics Corporation

MOSFET N-CH 60V 70A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

DMC3061SVT-13

Diodes Incorporated

MOSFET N/P-CH 30V 3.4A TSOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V
Power - Max: 880mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6

封装: -

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-

30V

3.4A (Ta), 2.7A (Ta)

60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V

1.8V @ 250µA, 2.2V @ 250µA

6.6nC @ 10V, 6.8nC @ 10V

278pF @ 15V, 287pF @ 15V

880mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-23-6

FS03MR12A6MA1BBPSA1

Infineon Technologies

SIC 6N-CH 1200V AG-HYBRIDD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-HYBRIDD-2

封装: -

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-

1200V (1.2kV)

400A (Tj)

3.7mOhm @ 400A, 15V

5.55V @ 240mA

1320nC @ 15V

42500pF @ 600V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-HYBRIDD-2

AOE6936

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 55A/85A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V
Power - Max: 24W, 39W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (5x6)

封装: -

库存8,757

-

30V

55A (Tc), 85A (Tc)

5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V

2.2V @ 250µA, 2.1V @ 250µA

15nC @ 4.5V, 25nC @ 4.5V

1150pF @ 15V, 2270pF @ 15V

24W, 39W

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN (5x6)

DMT3020UFDB-13

Diodes Incorporated

MOSFET 2N-CH 30V 6.5A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V
Power - Max: 860mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: -

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-

30V

6.5A (Ta)

21mOhm @ 6A, 10V

1.7V @ 250µA

8.8nC @ 10V

383pF @ 15V

860mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

MSCSM120TAM16TPAG

Microchip Technology

SIC 6N-CH 1200V 171A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 728W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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-

1200V (1.2kV)

171A (Tc)

16mOhm @ 80A, 20V

2.8V @ 6mA

464nC @ 20V

6040pF @ 1000V

728W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

G05NP06S2

Goford Semiconductor

MOSFET N/P-CH 60V 5A/3.1A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc), 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1336pF @ 30V, 1454pF @ 30V
Power - Max: 2.5W (Tc), 1.9W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存22,470

-

60V

5A (Tc), 3.1A (Tc)

36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V

2V @ 250µA, 2.2V @ 250µA

22nC @ 10V, 37nC @ 10V

1336pF @ 30V, 1454pF @ 30V

2.5W (Tc), 1.9W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PJL9812_R2_00201

Panjit International Inc.

MOSFET 2N-CH 30V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 421pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存14,889

-

30V

6A (Ta)

35mOhm @ 6A, 10V

1.3V @ 250µA

5.1nC @ 4.5V

421pF @ 15V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

UM6K1N-TP

Micro Commercial Co

MOSFET 2N-CH 30V 0.1A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

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-

30V

100mA

8Ohm @ 10mA, 4V

1.5V @ 100µA

-

13pF @ 5V

150mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

IRF640ACP001

Fairchild Semiconductor

MOSFET N-CH 200V

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

FW257-TL-E

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

DMN2300UFL4Q-7

Diodes Incorporated

MOSFET 2N-CH 20V 2.11A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V
Power - Max: 530mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: X2-DFN1310-6

封装: -

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-

20V

2.11A (Ta)

195mOhm @ 300mA, 4.5V

950mV @ 250µA

3.2nC @ 4.5V

135.2pF @ 0V

530mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN

X2-DFN1310-6

EPC2101

EPC

GANFET 2N-CH 60V 9.5A/38A DIE

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

库存99

-

60V

9.5A, 38A

11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V

2.5V @ 3mA, 2.5V @ 12mA

2.7nC @ 5V, 12nC @ 5V

300pF @ 30V, 1200pF @ 30V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

HP4936DY

Fairchild Semiconductor

MOSFET 2N-CH 30V 5.8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

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Logic Level Gate

30V

5.8A (Ta)

37mOhm @ 5.8A, 10V

1V @ 250µA

25nC @ 10V

625pF @ 25V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC