页 22 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7329TR	Infineon Technologies	MOSFET 2P-CH 12V 9.2A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.2A Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存44,400	Logic Level Gate	12V	9.2A	17 mOhm @ 9.2A, 4.5V	900mV @ 250µA	57nC @ 4.5V	3450pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI5915DC-T1-E3	Vishay Siliconix	MOSFET 2P-CH 8V 3.4A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封装: 8-SMD, Flat Lead	库存1,483,584	Logic Level Gate	8V	3.4A	70 mOhm @ 3.4A, 4.5V	450mV @ 250µA (Min)	9nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
BSO604NS2XUMA1	Infineon Technologies	MOSFET 2N-CH 55V 5A 8DSO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,288	Logic Level Gate	55V	5A	35 mOhm @ 2.5A, 10V	2V @ 30µA	26nC @ 10V	870pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	P-DSO-8
APTC60TAM21SCTPAG	Microsemi Corporation	MOSFET 6N-CH 600V 116A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 116A Rds On (Max) @ Id, Vgs: 21 mOhm @ 88A, 10V Vgs(th) (Max) @ Id: 3.6V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 100V Power - Max: 625W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6-P	封装: Module	库存6,256	Standard	600V	116A	21 mOhm @ 88A, 10V	3.6V @ 6mA	580nC @ 10V	13000pF @ 100V	625W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP6-P
ALD1115MAL	Advanced Linear Devices Inc.	MOSFET N/P-CH 10.6V 8MSOP FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存2,448	Standard	10.6V	-	1800 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
NVMFD5875NLT3G	ON Semiconductor	MOSFET 2N-CH 60V 7A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power - Max: 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	封装: 8-PowerTDFN	库存6,496	Logic Level Gate	60V	7A	33 mOhm @ 7.5A, 10V	3V @ 250µA	20nC @ 10V	540pF @ 25V	3.2W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
DMC1030UFDBQ-7	Diodes Incorporated	MOSFET N/P-CH 12V 5.1A UDFN2020 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V Power - Max: 1.36W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存7,952	Standard	12V	5.1A	34 mOhm @ 4.6A, 4.5V	1V @ 250µA	23.1nC @ 10V	1003pF @ 6V	1.36W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
AO6802	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 3.5A 6-TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封装: SC-74, SOT-457	库存403,212	Logic Level Gate	30V	3.5A	50 mOhm @ 3.5A, 10V	2.5V @ 250µA	5nC @ 10V	210pF @ 15V	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SIZ728DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 16A 6-POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A, 35A Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V Power - Max: 27W, 48W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	封装: 6-PowerPair?	库存3,504	Logic Level Gate	25V	16A, 35A	7.7 mOhm @ 18A, 10V	2.2V @ 250µA	26nC @ 10V	890pF @ 12.5V	27W, 48W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
SIZ910DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 40A POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Power - Max: 48W, 100W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair?	封装: 8-PowerWDFN	库存7,696	Logic Level Gate	30V	40A	5.8 mOhm @ 20A, 10V	2.2V @ 250µA	40nC @ 10V	1500pF @ 15V	48W, 100W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair?
AUIRF7313QTR	Infineon Technologies	MOSFET 2N-CH 30V 6.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,360	Logic Level Gate	30V	6.9A	29 mOhm @ 6.9A, 10V	3V @ 250µA	33nC @ 10V	755pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FC4B22270L1	Panasonic Electronic Components	GATE RESISTOR INTEGRATED DUAL NC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.4V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 10V Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: 4-SMD	封装: 4-SMD, No Lead	库存19,824	Standard	-	-	-	1.4V @ 310µA	9nC @ 4V	910pF @ 10V	1.5W (Ta)	150°C	Surface Mount	4-SMD, No Lead	4-SMD
SI3552DV-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 6TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封装: SOT-23-6 Thin, TSOT-23-6	库存174,708	Logic Level Gate	30V	-	105 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	3.2nC @ 5V	-	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI3900DV-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 2A 6-TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封装: SOT-23-6 Thin, TSOT-23-6	库存539,556	Logic Level Gate	20V	2A	125 mOhm @ 2.4A, 4.5V	1.5V @ 250µA	4nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
RFD14N05S2515	Harris Corporation	MOSFET N-CH 50V 14A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BSC150N03LDGATMA1	Infineon Technologies	MOSFET 2N-CH 30V 8A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Power - Max: 26W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封装: -	库存152,103	Logic Level Gate	30V	8A	15mOhm @ 20A, 10V	2.2V @ 250µA	13.2nC @ 10V	1100pF @ 15V	26W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
SQJ260EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	封装: -	库存8,994	-	60V	20A (Tc), 54A (Tc)	19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V	2.5V @ 250µA	20nC @ 10V, 40nC @ 10V	1100pF @ 25V, 2500pF @ 25V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
NVMJD027N10MCLTWG	onsemi	PTNG 100V N-CH LL IN LFPAK56 DUA FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 38µA Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V Power - Max: 3.1W (Ta), 46W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: 8-LFPAK	封装: -	Request a Quote	-	100V	7.4A (Ta), 28A (Tc)	26mOhm @ 7A, 10V	3V @ 38µA	9.9nC @ 10V	697pF @ 50V	3.1W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	8-LFPAK
MSCC60VRM99CT3AG	Microchip Technology	MOSFET 600V 19A SP3F FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封装: -	Request a Quote	-	600V	19A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	SP3F
AON5816	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 12A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 10V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-DFN-EP (2x5)	封装: -	Request a Quote	-	20V	12A (Ta)	6.5mOhm @ 12A, 4.5V	1.3V @ 250µA	35nC @ 4.5V	2170pF @ 10V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-DFN-EP (2x5)
MCMNP2065A-TP	Micro Commercial Co	MOSFET N/P-CH 20V 6A/4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 51mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.65nC @ 4.5V, 5.41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 880pF @ 6V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: DFN2020-6L	封装: -	库存17,502	-	20V	6A (Ta), 4A (Ta)	25mOhm @ 5A, 4.5V, 51mOhm @ 3.4A, 4.5V	1V @ 250µA	7.65nC @ 4.5V, 5.41nC @ 10V	418pF @ 10V, 880pF @ 6V	2W	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	DFN2020-6L
FDC6333C-G	onsemi	MOSFET N/P-CH 30V 2.5A/2A SSOT6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 2A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V, 130mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V, 185pF @ 15V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT™-6	封装: -	Request a Quote	-	30V	2.5A (Ta), 2A (Ta)	95mOhm @ 2.5A, 10V, 130mOhm @ 2A, 10V	3V @ 250µA	6.6nC @ 10V, 5.7nC @ 10V	282pF @ 15V, 185pF @ 15V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT™-6
CMLDM8002AG-TR-PBFREE	Central Semiconductor Corp	MOSFET 2P-CH 50V 0.28A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存8,073	Logic Level Gate	50V	280mA	2.5Ohm @ 500mA, 10V	2.5V @ 250µA	0.72nC @ 4.5V	70pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NVMFD5C674NLT1G	onsemi	MOSFET 2N-CH 60V 11A/42A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Power - Max: 3W (Ta), 37W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	库存4,302	-	60V	11A (Ta), 42A (Tc)	14.4mOhm @ 10A, 10V	2.2V @ 25µA	4.7nC @ 4.5V	640pF @ 25V	3W (Ta), 37W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
AO6601L	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 3.4A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.3A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V, 135mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.34nC @ 4.5V, 4.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 15V, 409pF @ 15V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封装: -	Request a Quote	-	30V	3.4A (Ta), 2.3A (Ta)	60mOhm @ 3A, 10V, 135mOhm @ 2.3A, 10V	1.4V @ 250µA	4.34nC @ 4.5V, 4.8nC @ 4.5V	390pF @ 15V, 409pF @ 15V	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
MSCSM120TLM31C3AG	Microchip Technology	SIC 4N-CH 1200V 89A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封装: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 1mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
DMP2075UFDB-13	Diodes Incorporated	MOSFET 2P-CH 20V 3.8A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: -	Request a Quote	-	20V	3.8A (Ta)	75mOhm @ 2.9A, 4.5V	1.4V @ 250µA	8.8nC @ 4.5V	642pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
NDS9942	onsemi	MOSFET N/P-CH 20V 3A/2.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V Power - Max: 900mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	Logic Level Gate	20V	3A, 2.5A	125mOhm @ 1A, 10V	-	27nC @ 10V	525pF @ 10V	900mW	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TSM6502CR	Taiwan Semiconductor Corporation	MOSFET N/P-CH 60V 24A/18A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Power - Max: 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	封装: -	Request a Quote	-	60V	24A (Tc), 18A (Tc)	34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V	2.5V @ 250µA	10.3nC @ 4.5V, 9.5nC @ 4.5V	1159pF @ 30V, 930pF @ 30V	40W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFN (5x6)
MSCSM120DDUM31TBL2NG	Microchip Technology	SIC 4N-CH 1200V 79A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 310W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	79A	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	310W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-

IRF7329TR

Infineon Technologies

MOSFET 2P-CH 12V 9.2A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存44,400

Logic Level Gate

12V

9.2A

17 mOhm @ 9.2A, 4.5V

900mV @ 250µA

57nC @ 4.5V

3450pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI5915DC-T1-E3

Vishay Siliconix

MOSFET 2P-CH 8V 3.4A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封装: 8-SMD, Flat Lead

库存1,483,584

Logic Level Gate

8V

3.4A

70 mOhm @ 3.4A, 4.5V

450mV @ 250µA (Min)

9nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

BSO604NS2XUMA1

Infineon Technologies

MOSFET 2N-CH 55V 5A 8DSO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: P-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,288

Logic Level Gate

55V

5A

35 mOhm @ 2.5A, 10V

2V @ 30µA

26nC @ 10V

870pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

P-DSO-8

APTC60TAM21SCTPAG

Microsemi Corporation

MOSFET 6N-CH 600V 116A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 116A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 88A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 100V
Power - Max: 625W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6-P

封装: Module

库存6,256

Standard

600V

116A

21 mOhm @ 88A, 10V

3.6V @ 6mA

580nC @ 10V

13000pF @ 100V

625W

-40°C ~ 150°C (TJ)

Chassis Mount

Module

SP6-P

ALD1115MAL

Advanced Linear Devices Inc.

MOSFET N/P-CH 10.6V 8MSOP

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存2,448

Standard

10.6V

-

1800 Ohm @ 5V

1V @ 1µA

-

3pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

NVMFD5875NLT3G

ON Semiconductor

MOSFET 2N-CH 60V 7A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

封装: 8-PowerTDFN

库存6,496

Logic Level Gate

60V

7A

33 mOhm @ 7.5A, 10V

3V @ 250µA

20nC @ 10V

540pF @ 25V

3.2W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

DMC1030UFDBQ-7

Diodes Incorporated

MOSFET N/P-CH 12V 5.1A UDFN2020

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
Power - Max: 1.36W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存7,952

Standard

12V

5.1A

34 mOhm @ 4.6A, 4.5V

1V @ 250µA

23.1nC @ 10V

1003pF @ 6V

1.36W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

AO6802

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 3.5A 6-TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封装: SC-74, SOT-457

库存403,212

Logic Level Gate

30V

3.5A

50 mOhm @ 3.5A, 10V

2.5V @ 250µA

5nC @ 10V

210pF @ 15V

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

SIZ728DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V 16A 6-POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

封装: 6-PowerPair?

库存3,504

Logic Level Gate

25V

16A, 35A

7.7 mOhm @ 18A, 10V

2.2V @ 250µA

26nC @ 10V

890pF @ 12.5V

27W, 48W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

SIZ910DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 40A POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Power - Max: 48W, 100W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair?

封装: 8-PowerWDFN

库存7,696

Logic Level Gate

30V

40A

5.8 mOhm @ 20A, 10V

2.2V @ 250µA

40nC @ 10V

1500pF @ 15V

48W, 100W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair?

AUIRF7313QTR

Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,360

Logic Level Gate

30V

6.9A

29 mOhm @ 6.9A, 10V

3V @ 250µA

33nC @ 10V

755pF @ 25V

2.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FC4B22270L1

Panasonic Electronic Components

GATE RESISTOR INTEGRATED DUAL NC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.4V @ 310µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 10V
Power - Max: 1.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: 4-SMD

封装: 4-SMD, No Lead

库存19,824

Standard

-

1.4V @ 310µA

9nC @ 4V

910pF @ 10V

1.5W (Ta)

150°C

Surface Mount

4-SMD, No Lead

4-SMD

SI3552DV-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 6TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封装: SOT-23-6 Thin, TSOT-23-6

库存174,708

Logic Level Gate

30V

-

105 mOhm @ 2.5A, 10V

1V @ 250µA (Min)

3.2nC @ 5V

-

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SI3900DV-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 2A 6-TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封装: SOT-23-6 Thin, TSOT-23-6

库存539,556

Logic Level Gate

20V

2A

125 mOhm @ 2.4A, 4.5V

1.5V @ 250µA

4nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

RFD14N05S2515

Harris Corporation

MOSFET N-CH 50V 14A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

BSC150N03LDGATMA1

Infineon Technologies

MOSFET 2N-CH 30V 8A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power - Max: 26W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封装: -

库存152,103

Logic Level Gate

30V

8A

15mOhm @ 20A, 10V

2.2V @ 250µA

13.2nC @ 10V

1100pF @ 15V

26W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

SQJ260EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

封装: -

库存8,994

-

60V

20A (Tc), 54A (Tc)

19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V

2.5V @ 250µA

20nC @ 10V, 40nC @ 10V

1100pF @ 25V, 2500pF @ 25V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

NVMJD027N10MCLTWG

onsemi

PTNG 100V N-CH LL IN LFPAK56 DUA

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 50V
Power - Max: 3.1W (Ta), 46W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: 8-LFPAK

封装: -

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100V

7.4A (Ta), 28A (Tc)

26mOhm @ 7A, 10V

3V @ 38µA

9.9nC @ 10V

697pF @ 50V

3.1W (Ta), 46W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

8-LFPAK

MSCC60VRM99CT3AG

Microchip Technology

MOSFET 600V 19A SP3F

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封装: -

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-

600V

19A (Tc)

-

Chassis Mount

Module

SP3F

AON5816

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 12A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 10V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Supplier Device Package: 6-DFN-EP (2x5)

封装: -

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20V

12A (Ta)

6.5mOhm @ 12A, 4.5V

1.3V @ 250µA

35nC @ 4.5V

2170pF @ 10V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

6-WFDFN Exposed Pad

6-DFN-EP (2x5)

MCMNP2065A-TP

Micro Commercial Co

MOSFET N/P-CH 20V 6A/4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 51mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.65nC @ 4.5V, 5.41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 880pF @ 6V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: DFN2020-6L

封装: -

库存17,502

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20V

6A (Ta), 4A (Ta)

25mOhm @ 5A, 4.5V, 51mOhm @ 3.4A, 4.5V

1V @ 250µA

7.65nC @ 4.5V, 5.41nC @ 10V

418pF @ 10V, 880pF @ 6V

2W

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

DFN2020-6L

FDC6333C-G

onsemi

MOSFET N/P-CH 30V 2.5A/2A SSOT6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V, 130mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V, 185pF @ 15V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT™-6

封装: -

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30V

2.5A (Ta), 2A (Ta)

95mOhm @ 2.5A, 10V, 130mOhm @ 2A, 10V

3V @ 250µA

6.6nC @ 10V, 5.7nC @ 10V

282pF @ 15V, 185pF @ 15V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT™-6

CMLDM8002AG-TR-PBFREE

Central Semiconductor Corp

MOSFET 2P-CH 50V 0.28A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存8,073

Logic Level Gate

50V

280mA

2.5Ohm @ 500mA, 10V

2.5V @ 250µA

0.72nC @ 4.5V

70pF @ 25V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NVMFD5C674NLT1G

onsemi

MOSFET 2N-CH 60V 11A/42A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Power - Max: 3W (Ta), 37W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

库存4,302

-

60V

11A (Ta), 42A (Tc)

14.4mOhm @ 10A, 10V

2.2V @ 25µA

4.7nC @ 4.5V

640pF @ 25V

3W (Ta), 37W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

AO6601L

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 3.4A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V, 135mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.34nC @ 4.5V, 4.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 15V, 409pF @ 15V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封装: -

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30V

3.4A (Ta), 2.3A (Ta)

60mOhm @ 3A, 10V, 135mOhm @ 2.3A, 10V

1.4V @ 250µA

4.34nC @ 4.5V, 4.8nC @ 4.5V

390pF @ 15V, 409pF @ 15V

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

MSCSM120TLM31C3AG

Microchip Technology

SIC 4N-CH 1200V 89A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封装: -

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-

1200V (1.2kV)

89A (Tc)

31mOhm @ 40A, 20V

2.8V @ 1mA

232nC @ 20V

3020pF @ 1000V

395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

DMP2075UFDB-13

Diodes Incorporated

MOSFET 2P-CH 20V 3.8A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: -

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-

20V

3.8A (Ta)

75mOhm @ 2.9A, 4.5V

1.4V @ 250µA

8.8nC @ 4.5V

642pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

NDS9942

onsemi

MOSFET N/P-CH 20V 3A/2.5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V
Power - Max: 900mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

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Logic Level Gate

20V

3A, 2.5A

125mOhm @ 1A, 10V

-

27nC @ 10V

525pF @ 10V

900mW

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TSM6502CR

Taiwan Semiconductor Corporation

MOSFET N/P-CH 60V 24A/18A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Power - Max: 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)

封装: -

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-

60V

24A (Tc), 18A (Tc)

34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V

2.5V @ 250µA

10.3nC @ 4.5V, 9.5nC @ 4.5V

1159pF @ 30V, 930pF @ 30V

40W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFN (5x6)

MSCSM120DDUM31TBL2NG

Microchip Technology

SIC 4N-CH 1200V 79A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 310W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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-

1200V (1.2kV)

79A

31mOhm @ 40A, 20V

2.8V @ 3mA

232nC @ 20V

3020pF @ 1000V

310W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-