页 25 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF9910PBF	Infineon Technologies	MOSFET 2N-CH 20V 10A/12A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A, 12A Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,952	Logic Level Gate	20V	10A, 12A	13.4 mOhm @ 10A, 10V	2.55V @ 250µA	11nC @ 4.5V	900pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7331PBF	Infineon Technologies	MOSFET 2N-CH 20V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,320	Logic Level Gate	20V	7A	30 mOhm @ 7A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1340pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS6892AZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,272	Logic Level Gate	20V	7.5A	18 mOhm @ 7.5A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	1286pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTQD6968NR2G	ON Semiconductor	MOSFET 2N-CH 20V 6.2A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V Power - Max: 1.39W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存325,104	Logic Level Gate	20V	6.2A	22 mOhm @ 7A, 4.5V	1.2V @ 250µA	17nC @ 4.5V	630pF @ 16V	1.39W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTSM120AM25CT3AG	Microsemi Corporation	POWER MODULE - SIC FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 148A (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 3V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 544nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 1000V Power - Max: 937W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存4,944	Silicon Carbide (SiC)	1200V (1.2kV)	148A (Tc)	25 mOhm @ 80A, 20V	3V @ 4mA	544nC @ 20V	10200pF @ 1000V	937W	-40°C ~ 175°C (TJ)	Chassis Mount	SP3	SP3
APTM50DUM17G	Microsemi Corporation	MOSFET 2N-CH 500V 180A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封装: SP6	库存6,032	Standard	500V	180A	20 mOhm @ 90A, 10V	5V @ 10mA	560nC @ 10V	28000pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM20AM10FTG	Microsemi Corporation	MOSFET 2N-CH 200V 175A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封装: SP4	库存2,464	Standard	200V	175A	12 mOhm @ 87.5A, 10V	5V @ 5mA	224nC @ 10V	13700pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
ZXMP3A17DN8TA	Diodes Incorporated	MOSFET 2P-CH 30V 3.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存501,216	Logic Level Gate	30V	3.4A	70 mOhm @ 3.2A, 10V	1V @ 250µA (Min)	15.8nC @ 10V	630pF @ 15V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AO6810	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 3.5A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封装: SC-74, SOT-457	库存360,012	Logic Level Gate	30V	3.5A	50 mOhm @ 3.5A, 10V	2.5V @ 250µA	5nC @ 10V	210pF @ 15V	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SI5515DC-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 4.4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封装: 8-SMD, Flat Lead	库存3,904	Logic Level Gate	20V	4.4A, 3A	40 mOhm @ 4.4A, 4.5V	1V @ 250µA	7.5nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SH8M11TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 3.5A 8SOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存217,932	Logic Level Gate	30V	3.5A	98 mOhm @ 3.5A, 10V	2.5V @ 1mA	1.9nC @ 5V	85pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ALD110904PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.4V Vgs(th) (Max) @ Id: 420mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存3,984	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.4V	420mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IRF7342TRPBF	Infineon Technologies	MOSFET 2P-CH 55V 3.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存728,520	Logic Level Gate	55V	3.4A	105 mOhm @ 3.4A, 10V	1V @ 250µA	38nC @ 10V	690pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ980AEP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 75V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TA) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存4,848	Standard	75V	17A (Tc)	50 mOhm @ 3.8A, 10V	2.5V @ 250µA	21nC @ 10V	790pF @ 35V	34W (Tc)	-55°C ~ 175°C (TA)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
FC8V22040L	Panasonic Electronic Components	MOSFET 2N-CH 24V 8A WMINI8-F1 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 15 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: WMini8-F1	封装: 8-SMD, Flat Lead	库存28,740	Logic Level Gate	24V	8A	15 mOhm @ 4A, 4.5V	1.5V @ 1mA	-	-	1W	-40°C ~ 85°C (TJ)	Surface Mount	8-SMD, Flat Lead	WMini8-F1
NDS9948	Fairchild/ON Semiconductor	MOSFET 2P-CH 60V 2.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 250 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 394pF @ 30V Power - Max: 900mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存129,264	Logic Level Gate	60V	2.3A	250 mOhm @ 2.3A, 10V	3V @ 250µA	13nC @ 10V	394pF @ 30V	900mW	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SSM6N35AFE-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.25A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Power - Max: 250mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: -	库存251,127	Logic Level Gate, 1.2V Drive	20V	250mA (Ta)	1.1Ohm @ 150mA, 4.5V	1V @ 100µA	0.34nC @ 4.5V	36pF @ 10V	250mW	150°C	Surface Mount	SOT-563, SOT-666	ES6
NTMS4503NR2G-001	onsemi	MOSFET N-CH 28V 9A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BUK7K15-80EX	Nexperia USA Inc.	MOSFET 2N-CH 80V 23A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2457pF @ 25V Power - Max: 68W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	库存17,556	-	80V	23A (Ta)	15mOhm @ 10A, 10V	4V @ 1mA	35.1nC @ 10V	2457pF @ 25V	68W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
DMP3048LSD-13	Diodes Incorporated	MOSFET 2P-CH 30V 4.8A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1438pF @ 15V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	-	30V	4.8A (Ta)	48mOhm @ 5A, 10V	1.3V @ 250µA	13.5nC @ 4.5V	1438pF @ 15V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDMS5362L	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SIA923EDJ-T4-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.9W (Ta), 7.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	封装: -	Request a Quote	-	20V	4.5A (Ta), 4.5A (Tc)	54mOhm @ 3.8A, 4.5V	1.4V @ 250µA	25nC @ 8V	-	1.9W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
NVMFD5C462NLWFT1G	onsemi	MOSFET 2N-CH 40V 18A/84A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power - Max: 3W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	库存4,350	-	40V	18A (Ta), 84A (Tc)	4.7mOhm @ 10A, 10V	2.2V @ 40µA	11nC @ 4.5V	1300pF @ 25V	3W (Ta), 50W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
XP3700M	YAGEO XSEMI	MOSFET N AND P-CH 30V 7.8A 5.5A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 5.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	封装: -	库存2,970	-	30V	7.8A (Ta), 5.5A (Ta)	20mOhm @ 7A, 10V	2.2V @ 250µA	8nC @ 4.5V	880pF @ 15V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
F411MR12W2M1HPB76BPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存27	-	-	-	-	-	-	-	-	-	-	-	-
NTMFD6H840NLT1G	onsemi	MOSFET 2N-CH 80V 14A/74A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 96µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2022pF @ 40V Power - Max: 3.1W (Ta), 90W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	Request a Quote	-	80V	14A (Ta), 74A (Tc)	6.9mOhm @ 20A, 10V	2V @ 96µA	32nC @ 10V	2022pF @ 40V	3.1W (Ta), 90W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
SSM6P40TU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 1.4A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	封装: -	库存26,037	Logic Level Gate, 4V Drive	30V	1.4A (Ta)	226mOhm @ 1A, 10V	2V @ 1mA	2.9nC @ 10V	120pF @ 15V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
IRF7303TRPBFXTMA1	Infineon Technologies	MOSFET 2N-CH 30V 4.9A 8DSO-902 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8-902	封装: -	库存35,955	-	30V	4.9A (Ta)	50mOhm @ 2.4A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8-902
BSZ0910NDXTMA1	Infineon Technologies	MOSFET 2N-CH 30V 9.5A WISON-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Power - Max: 1.9W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-WISON-8	封装: -	Request a Quote	Logic Level Gate, 4.5V Drive	30V	9.5A (Ta), 25A (Tc)	9.5mOhm @ 9A, 10V	2V @ 250µA	5.6nC @ 4.5V	800pF @ 15V	1.9W (Ta), 31W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-WISON-8
SSF6670	Good-Ark Semiconductor	MOSFET 2N-CH 60V 3.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存23,910	-	60V	3.5A	90mOhm @ 3A, 10V	3V @ 250µA	7nC @ 4.5V	500pF @ 25V	2.4W	-55°C ~ 175°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP

IRF9910PBF

Infineon Technologies

MOSFET 2N-CH 20V 10A/12A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,952

Logic Level Gate

20V

10A, 12A

13.4 mOhm @ 10A, 10V

2.55V @ 250µA

11nC @ 4.5V

900pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7331PBF

Infineon Technologies

MOSFET 2N-CH 20V 7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,320

Logic Level Gate

20V

7A

30 mOhm @ 7A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

1340pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS6892AZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,272

Logic Level Gate

20V

7.5A

18 mOhm @ 7.5A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

1286pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTQD6968NR2G

ON Semiconductor

MOSFET 2N-CH 20V 6.2A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V
Power - Max: 1.39W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存325,104

Logic Level Gate

20V

6.2A

22 mOhm @ 7A, 4.5V

1.2V @ 250µA

17nC @ 4.5V

630pF @ 16V

1.39W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

APTSM120AM25CT3AG

Microsemi Corporation

POWER MODULE - SIC

FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 148A (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 3V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 544nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 1000V
Power - Max: 937W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存4,944

Silicon Carbide (SiC)

1200V (1.2kV)

148A (Tc)

25 mOhm @ 80A, 20V

3V @ 4mA

544nC @ 20V

10200pF @ 1000V

937W

-40°C ~ 175°C (TJ)

Chassis Mount

SP3

APTM50DUM17G

Microsemi Corporation

MOSFET 2N-CH 500V 180A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封装: SP6

库存6,032

Standard

500V

180A

20 mOhm @ 90A, 10V

5V @ 10mA

560nC @ 10V

28000pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM20AM10FTG

Microsemi Corporation

MOSFET 2N-CH 200V 175A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封装: SP4

库存2,464

Standard

200V

175A

12 mOhm @ 87.5A, 10V

5V @ 5mA

224nC @ 10V

13700pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

ZXMP3A17DN8TA

Diodes Incorporated

MOSFET 2P-CH 30V 3.4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存501,216

Logic Level Gate

30V

3.4A

70 mOhm @ 3.2A, 10V

1V @ 250µA (Min)

15.8nC @ 10V

630pF @ 15V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AO6810

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 3.5A 6TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封装: SC-74, SOT-457

库存360,012

Logic Level Gate

30V

3.5A

50 mOhm @ 3.5A, 10V

2.5V @ 250µA

5nC @ 10V

210pF @ 15V

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

SI5515DC-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 4.4A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封装: 8-SMD, Flat Lead

库存3,904

Logic Level Gate

20V

4.4A, 3A

40 mOhm @ 4.4A, 4.5V

1V @ 250µA

7.5nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SH8M11TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 3.5A 8SOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存217,932

Logic Level Gate

30V

3.5A

98 mOhm @ 3.5A, 10V

2.5V @ 1mA

1.9nC @ 5V

85pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

ALD110904PAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存3,984

Standard

10.6V

12mA, 3mA

500 Ohm @ 4.4V

420mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IRF7342TRPBF

Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存728,520

Logic Level Gate

55V

3.4A

105 mOhm @ 3.4A, 10V

1V @ 250µA

38nC @ 10V

690pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQJ980AEP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 75V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存4,848

Standard

75V

17A (Tc)

50 mOhm @ 3.8A, 10V

2.5V @ 250µA

21nC @ 10V

790pF @ 35V

34W (Tc)

-55°C ~ 175°C (TA)

Surface Mount

PowerPAK? SO-8 Dual

FC8V22040L

Panasonic Electronic Components

MOSFET 2N-CH 24V 8A WMINI8-F1

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: WMini8-F1

封装: 8-SMD, Flat Lead

库存28,740

Logic Level Gate

24V

8A

15 mOhm @ 4A, 4.5V

1.5V @ 1mA

-

1W

-40°C ~ 85°C (TJ)

Surface Mount

8-SMD, Flat Lead

WMini8-F1

NDS9948

Fairchild/ON Semiconductor

MOSFET 2P-CH 60V 2.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 394pF @ 30V
Power - Max: 900mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存129,264

Logic Level Gate

60V

2.3A

250 mOhm @ 2.3A, 10V

3V @ 250µA

13nC @ 10V

394pF @ 30V

900mW

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SSM6N35AFE-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A ES6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
Power - Max: 250mW
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: -

库存251,127

Logic Level Gate, 1.2V Drive

20V

250mA (Ta)

1.1Ohm @ 150mA, 4.5V

1V @ 100µA

0.34nC @ 4.5V

36pF @ 10V

250mW

150°C

Surface Mount

SOT-563, SOT-666

ES6

NTMS4503NR2G-001

onsemi

MOSFET N-CH 28V 9A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

BUK7K15-80EX

Nexperia USA Inc.

MOSFET 2N-CH 80V 23A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2457pF @ 25V
Power - Max: 68W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

库存17,556

-

80V

23A (Ta)

15mOhm @ 10A, 10V

4V @ 1mA

35.1nC @ 10V

2457pF @ 25V

68W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

DMP3048LSD-13

Diodes Incorporated

MOSFET 2P-CH 30V 4.8A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1438pF @ 15V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

-

30V

4.8A (Ta)

48mOhm @ 5A, 10V

1.3V @ 250µA

13.5nC @ 4.5V

1438pF @ 15V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FDMS5362L

Fairchild Semiconductor

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

SIA923EDJ-T4-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.9W (Ta), 7.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

封装: -

Request a Quote

-

20V

4.5A (Ta), 4.5A (Tc)

54mOhm @ 3.8A, 4.5V

1.4V @ 250µA

25nC @ 8V

-

1.9W (Ta), 7.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

NVMFD5C462NLWFT1G

onsemi

MOSFET 2N-CH 40V 18A/84A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Power - Max: 3W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

库存4,350

-

40V

18A (Ta), 84A (Tc)

4.7mOhm @ 10A, 10V

2.2V @ 40µA

11nC @ 4.5V

1300pF @ 25V

3W (Ta), 50W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

XP3700M

YAGEO XSEMI

MOSFET N AND P-CH 30V 7.8A 5.5A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

封装: -

库存2,970

-

30V

7.8A (Ta), 5.5A (Ta)

20mOhm @ 7A, 10V

2.2V @ 250µA

8nC @ 4.5V

880pF @ 15V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO

F411MR12W2M1HPB76BPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存27

-

NTMFD6H840NLT1G

onsemi

MOSFET 2N-CH 80V 14A/74A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2022pF @ 40V
Power - Max: 3.1W (Ta), 90W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

Request a Quote

-

80V

14A (Ta), 74A (Tc)

6.9mOhm @ 20A, 10V

2V @ 96µA

32nC @ 10V

2022pF @ 40V

3.1W (Ta), 90W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

SSM6P40TU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 1.4A UF6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Power - Max: 500mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

封装: -

库存26,037

Logic Level Gate, 4V Drive

30V

1.4A (Ta)

226mOhm @ 1A, 10V

2V @ 1mA

2.9nC @ 10V

120pF @ 15V

500mW (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

UF6

IRF7303TRPBFXTMA1

Infineon Technologies

MOSFET 2N-CH 30V 4.9A 8DSO-902

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8-902

封装: -

库存35,955

-

30V

4.9A (Ta)

50mOhm @ 2.4A, 10V

1V @ 250µA

25nC @ 10V

520pF @ 25V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8-902

BSZ0910NDXTMA1

Infineon Technologies

MOSFET 2N-CH 30V 9.5A WISON-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Power - Max: 1.9W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-WISON-8

封装: -

Request a Quote

Logic Level Gate, 4.5V Drive

30V

9.5A (Ta), 25A (Tc)

9.5mOhm @ 9A, 10V

2V @ 250µA

5.6nC @ 4.5V

800pF @ 15V

1.9W (Ta), 31W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PG-WISON-8

SSF6670

Good-Ark Semiconductor

MOSFET 2N-CH 60V 3.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存23,910

-

60V

3.5A

90mOhm @ 3A, 10V

3V @ 250µA

7nC @ 4.5V

500pF @ 25V

2.4W

-55°C ~ 175°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP