页 20 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7754	Infineon Technologies	MOSFET 2P-CH 12V 5.5A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存4,720	Logic Level Gate	12V	5.5A	25 mOhm @ 5.4A, 4.5V	900mV @ 250µA	22nC @ 4.5V	1984pF @ 6V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AO4803L	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 5A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存288,768	Standard	30V	5A	52 mOhm @ 5A, 10V	2.4V @ 250µA	11nC @ 10V	520pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4920DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存596,532	Logic Level Gate	30V	-	25 mOhm @ 6.9A, 10V	1V @ 250µA (Min)	23nC @ 5V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI5511DC-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Power - Max: 3.1W, 2.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封装: 8-SMD, Flat Lead	库存3,840	Logic Level Gate	30V	4A, 3.6A	55 mOhm @ 4.8A, 4.5V	2V @ 250µA	7.1nC @ 5V	435pF @ 15V	3.1W, 2.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SSM6P15FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 0.1A ES6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	封装: SOT-563, SOT-666	库存1,056,000	Logic Level Gate	30V	100mA	12 Ohm @ 10mA, 4V	1.7V @ 100µA	-	9.1pF @ 3V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
FMM150-0075P	IXYS	MOSFET 2N-CH 75V 150A I4-PAC-5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 120A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	封装: i4-Pac?-5	库存3,504	Standard	75V	150A	4.2 mOhm @ 120A, 10V	4V @ 1mA	225nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
BSO207PHXUMA1	Infineon Technologies	MOSFET 2P-CH 20V 5A 8DSO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,096	Logic Level Gate	20V	5A	45 mOhm @ 5.7A, 4.5V	1.2V @ 44µA	16nC @ 4.5V	1650pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
APTM100A23STG	Microsemi Corporation	MOSFET 2N-CH 1000V 36A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封装: SP4	库存7,088	Standard	1000V (1kV)	36A	270 mOhm @ 18A, 10V	5V @ 5mA	308nC @ 10V	8700pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
SI4808DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存396,420	Logic Level Gate	30V	5.7A	22 mOhm @ 7.5A, 10V	800mV @ 250µA (Min)	20nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMHT6016LFJ-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V V-DFN5045- FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-VDFN Exposed Pad Supplier Device Package: V-DFN5045-12	封装: 12-VDFN Exposed Pad	库存5,744	Standard	-	14.8A (Ta)	22 mOhm @ 10A, 10V	3V @ 250µA	8.4nC @ 4.5V	864pF @ 30V	-	-55°C ~ 150°C (TJ)	Surface Mount	12-VDFN Exposed Pad	V-DFN5045-12
QS8J5TR	Rohm Semiconductor	MOSFET 2P-CH 30V 5A TSMT8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 600mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封装: 8-SMD, Flat Lead	库存7,600	Logic Level Gate	30V	5A	39 mOhm @ 5A, 10V	2.5V @ 1mA	19nC @ 10V	1100pF @ 10V	600mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
ECH8659-TL-W	ON Semiconductor	MOSFET 2N-CH 30V 7A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V Power - Max: 1.3W Operating Temperature: 150°C (TJ) Mounting Type: - Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/ECH8	封装: 8-SMD, Flat Lead	库存6,656	Logic Level Gate, 4V Drive	30V	7A	24 mOhm @ 3.5A, 10V	2.6V @ 1mA	11.8nC @ 10V	710pF @ 10V	1.3W	150°C (TJ)	-	8-SMD, Flat Lead	SOT-28FL/ECH8
EFC4618R-P-TR	ON Semiconductor	MOSFET 2N-CH EFCP1818 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XBGA, 4-FCBGA Supplier Device Package: EFCP1313-4CC-037	封装: 4-XBGA, 4-FCBGA	库存43,620	Logic Level Gate, 2.5V Drive	-	-	-	-	25.4nC @ 4.5V	-	1.6W	150°C (TJ)	Surface Mount	4-XBGA, 4-FCBGA	EFCP1313-4CC-037
FDY3000NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 0.6A SC89 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: SOT-563, SOT-666	库存160,128	Logic Level Gate	20V	600mA	700 mOhm @ 600mA, 4.5V	1.3V @ 250µA	1.1nC @ 4.5V	60pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
ZXMC3F31DN8TA	Diodes Incorporated	MOSFET N/P-CH 30V 6.8A/4.9A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存962,676	Logic Level Gate, 4.5V Drive	30V	6.8A, 4.9A	24 mOhm @ 7A, 10V	3V @ 250µA	12.9nC @ 10V	608pF @ 15V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIA778DJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 12V/20V SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 4.5A, 1.5A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V Power - Max: 6.5W, 5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封装: PowerPAK? SC-70-6 Dual	库存120,012	Logic Level Gate	12V, 20V	4.5A, 1.5A	29 mOhm @ 5A, 4.5V	1V @ 250µA	15nC @ 8V	500pF @ 6V	6.5W, 5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
2N7002DWQ-7-F	Diodes Incorporated	MOSFET 2N-CH 60V 0.23A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存2,272	Standard	60V	230mA	7.5 Ohm @ 50mA, 5V	2V @ 250µA	-	50pF @ 25V	310mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
QH8KA1TCR	Rohm Semiconductor	30V NCH+NCH POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V Power - Max: 2.4W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封装: 8-SMD, Flat Lead	库存2,688	-	30V	4.5A	73 mOhm @ 4.5A, 10V	2.5V @ 1mA	3nC @ 10V	125pf @ 15V	2.4W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
DMP3085LSD-13	Diodes Incorporated	MOSFET 2P-CH 30V 3.9A 8SO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.9A Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存144,060	Logic Level Gate	30V	3.9A	70 mOhm @ 5.3A, 10V	3V @ 250µA	11nC @ 10V	563pF @ 25V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSC076N04NDATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 20V Power - Max: 2.3W (Ta), 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封装: -	库存13,440	-	40V	20A (Tc)	7.6mOhm @ 17A, 10V	4V @ 30µA	38nC @ 10V	2950pF @ 20V	2.3W (Ta), 65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
PSMN045-100HLX	Nexperia USA Inc.	MOSFET 2N-CH 100V 21A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Power - Max: 53W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	库存4,470	Logic Level Gate	100V	21A (Ta)	42mOhm @ 5A, 10V	2.1V @ 1mA	18.5nC @ 5V	2152pF @ 25V	53W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
FF11MR12W1M1B70BPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 5.55V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	封装: -	Request a Quote	-	1200V (1.2kV)	100A (Tj)	11.3mOhm @ 100A, 15V	5.55V @ 40mA	248nC @ 15V	7360pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B
FF11MR12W2M1HPB11BPSA1	Infineon Technologies	MOSFET 1200V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存54	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	-
SP8K1FRATB	Rohm Semiconductor	MOSFET 2N-CH 30V 5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存7,401	-	30V	5A (Ta)	51mOhm @ 5A, 10V	2.5V @ 1mA	5.5nC @ 5V	230pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AOCA32116E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 6A 4ALPHADFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: 4-AlphaDFN (1.2x1.2)	封装: -	Request a Quote	-	20V	6A (Ta)	36mOhm @ 3A, 4.5V	1.3V @ 250µA	5.5nC @ 4.5V	-	1.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, No Lead	4-AlphaDFN (1.2x1.2)
SI1965DH-T1-BE3	Vishay Siliconix	MOSFET 2P-CH 12V 1.3A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Power - Max: 740mW (Ta), 1.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	封装: -	Request a Quote	-	12V	1.14A (Ta), 1.3A (Tc)	390mOhm @ 1A, 4.5V	1V @ 250µA	4.2nC @ 8V	120pF @ 6V	740mW (Ta), 1.25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SH8K39GZETB	Rohm Semiconductor	MOSFET 2N-CH 60V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	60V	8A (Ta)	21mOhm @ 8A, 10V	2.7V @ 200µA	25nC @ 10V	1240pF @ 30V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
RFD14LN05SM	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN31D5UDW-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V Power - Max: 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	30V	430mA (Ta)	1.5Ohm @ 100mA, 4.5V	0.9V @ 250µA	0.3nC @ 4.5V	15.4pF @ 15V	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
RF1S15N06	Harris Corporation	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IRF7754

Infineon Technologies

MOSFET 2P-CH 12V 5.5A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存4,720

Logic Level Gate

12V

5.5A

25 mOhm @ 5.4A, 4.5V

900mV @ 250µA

22nC @ 4.5V

1984pF @ 6V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AO4803L

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存288,768

Standard

30V

5A

52 mOhm @ 5A, 10V

2.4V @ 250µA

11nC @ 10V

520pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4920DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存596,532

Logic Level Gate

30V

-

25 mOhm @ 6.9A, 10V

1V @ 250µA (Min)

23nC @ 5V

-

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI5511DC-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 4A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Power - Max: 3.1W, 2.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封装: 8-SMD, Flat Lead

库存3,840

Logic Level Gate

30V

4A, 3.6A

55 mOhm @ 4.8A, 4.5V

2V @ 250µA

7.1nC @ 5V

435pF @ 15V

3.1W, 2.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SSM6P15FE(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A ES6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

封装: SOT-563, SOT-666

库存1,056,000

Logic Level Gate

30V

100mA

12 Ohm @ 10mA, 4V

1.7V @ 100µA

-

9.1pF @ 3V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6 (1.6x1.6)

FMM150-0075P

IXYS

MOSFET 2N-CH 75V 150A I4-PAC-5

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 120A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

封装: i4-Pac?-5

库存3,504

Standard

75V

150A

4.2 mOhm @ 120A, 10V

4V @ 1mA

225nC @ 10V

-

-55°C ~ 175°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

BSO207PHXUMA1

Infineon Technologies

MOSFET 2P-CH 20V 5A 8DSO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,096

Logic Level Gate

20V

5A

45 mOhm @ 5.7A, 4.5V

1.2V @ 44µA

16nC @ 4.5V

1650pF @ 15V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

APTM100A23STG

Microsemi Corporation

MOSFET 2N-CH 1000V 36A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封装: SP4

库存7,088

Standard

1000V (1kV)

36A

270 mOhm @ 18A, 10V

5V @ 5mA

308nC @ 10V

8700pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

SI4808DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存396,420

Logic Level Gate

30V

5.7A

22 mOhm @ 7.5A, 10V

800mV @ 250µA (Min)

20nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMHT6016LFJ-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V V-DFN5045-

FET Type: 4 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-VDFN Exposed Pad
Supplier Device Package: V-DFN5045-12

封装: 12-VDFN Exposed Pad

库存5,744

Standard

-

14.8A (Ta)

22 mOhm @ 10A, 10V

3V @ 250µA

8.4nC @ 4.5V

864pF @ 30V

-

-55°C ~ 150°C (TJ)

Surface Mount

12-VDFN Exposed Pad

V-DFN5045-12

QS8J5TR

Rohm Semiconductor

MOSFET 2P-CH 30V 5A TSMT8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Power - Max: 600mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封装: 8-SMD, Flat Lead

库存7,600

Logic Level Gate

30V

5A

39 mOhm @ 5A, 10V

2.5V @ 1mA

19nC @ 10V

1100pF @ 10V

600mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

ECH8659-TL-W

ON Semiconductor

MOSFET 2N-CH 30V 7A ECH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
Power - Max: 1.3W
Operating Temperature: 150°C (TJ)
Mounting Type: -
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/ECH8

封装: 8-SMD, Flat Lead

库存6,656

Logic Level Gate, 4V Drive

30V

7A

24 mOhm @ 3.5A, 10V

2.6V @ 1mA

11.8nC @ 10V

710pF @ 10V

1.3W

150°C (TJ)

-

8-SMD, Flat Lead

SOT-28FL/ECH8

EFC4618R-P-TR

ON Semiconductor

MOSFET 2N-CH EFCP1818

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XBGA, 4-FCBGA
Supplier Device Package: EFCP1313-4CC-037

封装: 4-XBGA, 4-FCBGA

库存43,620

Logic Level Gate, 2.5V Drive

-

25.4nC @ 4.5V

-

1.6W

150°C (TJ)

Surface Mount

4-XBGA, 4-FCBGA

EFCP1313-4CC-037

FDY3000NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 0.6A SC89

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Power - Max: 446mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: SOT-563, SOT-666

库存160,128

Logic Level Gate

20V

600mA

700 mOhm @ 600mA, 4.5V

1.3V @ 250µA

1.1nC @ 4.5V

60pF @ 10V

446mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

ZXMC3F31DN8TA

Diodes Incorporated

MOSFET N/P-CH 30V 6.8A/4.9A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存962,676

Logic Level Gate, 4.5V Drive

30V

6.8A, 4.9A

24 mOhm @ 7A, 10V

3V @ 250µA

12.9nC @ 10V

608pF @ 15V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIA778DJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 12V/20V SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 1.5A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Power - Max: 6.5W, 5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封装: PowerPAK? SC-70-6 Dual

库存120,012

Logic Level Gate

12V, 20V

4.5A, 1.5A

29 mOhm @ 5A, 4.5V

1V @ 250µA

15nC @ 8V

500pF @ 6V

6.5W, 5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

2N7002DWQ-7-F

Diodes Incorporated

MOSFET 2N-CH 60V 0.23A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 310mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存2,272

Standard

60V

230mA

7.5 Ohm @ 50mA, 5V

2V @ 250µA

-

50pF @ 25V

310mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

QH8KA1TCR

Rohm Semiconductor

30V NCH+NCH POWER MOSFET

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
Power - Max: 2.4W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封装: 8-SMD, Flat Lead

库存2,688

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30V

4.5A

73 mOhm @ 4.5A, 10V

2.5V @ 1mA

3nC @ 10V

125pf @ 15V

2.4W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

DMP3085LSD-13

Diodes Incorporated

MOSFET 2P-CH 30V 3.9A 8SO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存144,060

Logic Level Gate

30V

3.9A

70 mOhm @ 5.3A, 10V

3V @ 250µA

11nC @ 10V

563pF @ 25V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSC076N04NDATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 20V
Power - Max: 2.3W (Ta), 65W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封装: -

库存13,440

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40V

20A (Tc)

7.6mOhm @ 17A, 10V

4V @ 30µA

38nC @ 10V

2950pF @ 20V

2.3W (Ta), 65W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

PSMN045-100HLX

Nexperia USA Inc.

MOSFET 2N-CH 100V 21A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Power - Max: 53W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

库存4,470

Logic Level Gate

100V

21A (Ta)

42mOhm @ 5A, 10V

2.1V @ 1mA

18.5nC @ 5V

2152pF @ 25V

53W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

FF11MR12W1M1B70BPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

封装: -

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1200V (1.2kV)

100A (Tj)

11.3mOhm @ 100A, 15V

5.55V @ 40mA

248nC @ 15V

7360pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B

FF11MR12W2M1HPB11BPSA1

Infineon Technologies

MOSFET 1200V

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存54

-

1200V (1.2kV)

-

SP8K1FRATB

Rohm Semiconductor

MOSFET 2N-CH 30V 5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存7,401

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30V

5A (Ta)

51mOhm @ 5A, 10V

2.5V @ 1mA

5.5nC @ 5V

230pF @ 10V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AOCA32116E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 6A 4ALPHADFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.7W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: 4-AlphaDFN (1.2x1.2)

封装: -

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-

20V

6A (Ta)

36mOhm @ 3A, 4.5V

1.3V @ 250µA

5.5nC @ 4.5V

-

1.7W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, No Lead

4-AlphaDFN (1.2x1.2)

SI1965DH-T1-BE3

Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Power - Max: 740mW (Ta), 1.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

封装: -

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12V

1.14A (Ta), 1.3A (Tc)

390mOhm @ 1A, 4.5V

1V @ 250µA

4.2nC @ 8V

120pF @ 6V

740mW (Ta), 1.25W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SH8K39GZETB

Rohm Semiconductor

MOSFET 2N-CH 60V 8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

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-

60V

8A (Ta)

21mOhm @ 8A, 10V

2.7V @ 200µA

25nC @ 10V

1240pF @ 30V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

RFD14LN05SM

Fairchild Semiconductor

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

DMN31D5UDW-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 0.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Power - Max: 330mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

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-

30V

430mA (Ta)

1.5Ohm @ 100mA, 4.5V

0.9V @ 250µA

0.3nC @ 4.5V

15.4pF @ 15V

330mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

RF1S15N06

Harris Corporation

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

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