页 25 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP650	Infineon Technologies	TRANS NPN RF 4V 150MA SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 37GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Gain: 10.5dB ~ 21.5dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封装: SC-82A, SOT-343	库存5,360	4.5V	37GHz	0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz	10.5dB ~ 21.5dB	500mW	110 @ 80mA, 3V	150mA	-	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
MS2361	Microsemi Corporation	TRANS RF BIPO 87.5W 2.6A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 2.6A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	封装: M115	库存6,368	65V	1.025GHz ~ 1.15GHz	-	9dB	87.5W	-	2.6A	200°C (TJ)	Chassis Mount	M115	M115
NE68033-T1B-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: TO-236-3, SC-59, SOT-23-3	库存193,200	10V	10GHz	1.8dB @ 2GHz	9dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
PZ1418B30U,114	Ampleon USA Inc.	TRANS SOT443A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.6GHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 45W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Flange Package / Case: SOT-443A Supplier Device Package: CDFM2	封装: SOT-443A	库存3,088	15V	1.6GHz	-	8.4dB	45W	-	4A	200°C (TJ)	Flange	SOT-443A	CDFM2
UPA802T-T1-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存72,000	10V	7GHz	1.4dB @ 1GHz	12dB	200mW	70 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
KSC1674RTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	库存7,312	20V	600MHz	3dB ~ 5dB @ 100MHz	-	250mW	40 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSC2756OMTF	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 30MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 850MHz Noise Figure (dB Typ @ f): 6.5dB @ 200MHz Gain: 15dB ~ 23dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封装: TO-236-3, SC-59, SOT-23-3	库存396,000	20V	850MHz	6.5dB @ 200MHz	15dB ~ 23dB	150mW	90 @ 5mA, 10V	30mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
SD1727	STMicroelectronics	TRANSISTOR NPN RF HF SSB M164 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 233W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M164 Supplier Device Package: M164	封装: M164	库存7,504	55V	-	-	14dB	233W	18 @ 1.4A, 6V	10A	200°C (TJ)	Chassis, Stud Mount	M164	M164
BFQ31ATC	Diodes Incorporated	TRANSISTOR UHF/VHF NPN SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存4,608	15V	600MHz	6dB @ 60MHz	-	330mW	100 @ 3mA, 1V	100mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
AT-32063-TR1	Broadcom Limited	IC TRANS NPN BIPOLAR SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz Gain: 12.5dB ~ 14.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存835,344	5.5V	-	1.1dB ~ 1.4dB @ 900MHz	12.5dB ~ 14.5dB	150mW	50 @ 5mA, 2.7V	32mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BFG31,115	NXP	TRANS PNP 10V 5GHZ SOT223 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	封装: TO-261-4, TO-261AA	库存7,120	15V	5GHz	-	-	1W	25 @ 70mA, 10V	100mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
PH1090-350L	M/A-Com Technology Solutions	TRANSISTOR 350W 1090MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 80V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.32dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 17A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	封装: -	库存3,344	80V	-	-	8.32dB	350W	-	17A	200°C (TJ)	Chassis Mount	-	-
MRF392	M/A-Com Technology Solutions	TRANS RF NPN 30V 16A 744A-01 Transistor Type: 2 NPN (Dual) Common Emitter Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V Current - Collector (Ic) (Max): 16A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 744A-01 Supplier Device Package: 744A-01, Style 1	封装: 744A-01	库存5,888	30V	-	-	10dB	125W	40 @ 1A, 5V	16A	200°C (TJ)	Chassis Mount	744A-01	744A-01, Style 1
SD1275	STMicroelectronics	TRANS NPN RF MICROWAVE VHF M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M135 Supplier Device Package: M135	封装: M135	库存6,264	16V	-	-	9dB	70W	20 @ 250mA, 5V	8A	200°C (TJ)	Chassis, Stud Mount	M135	M135
MCH4017-TL-H	ON Semiconductor	TRANS NPN 12V 100MA MCPH4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 17dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-MCPH	封装: 4-SMD, Flat Leads	库存2,912	12V	10GHz	1.2dB @ 1GHz	17dB	450mW	60 @ 50mA, 5V	100mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-MCPH
BFR843EL3E6327XTSA1	Infineon Technologies	TRANSISTOR NPN TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.6V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 25.5dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 55mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: TSLP-3-10	封装: 3-XFDFN	库存7,040	2.6V	-	-	25.5dB	125mW	-	55mA	150°C (TJ)	Surface Mount	3-XFDFN	TSLP-3-10
BFU520R	NXP	TRANS RF NPN 12V 30MA SOT-143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10.5GHz Noise Figure (dB Typ @ f): 0.65dB @ 900MHz Gain: 20dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	封装: TO-253-4, TO-253AA	库存5,056	12V	10.5GHz	0.65dB @ 900MHz	20dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
MCH4009-TL-H	ON Semiconductor	TRANS NPN 3.5V 40MA MCPH4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 2GHz Gain: 13.5dB Power - Max: 120mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-MCPH	封装: 4-SMD, Flat Leads	库存36,000	3.5V	25GHz	1.1dB @ 2GHz	13.5dB	120mW	50 @ 5mA, 1V	40mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-MCPH
BFQ19SH6327XTSA1	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3dB @ 1.8GHz Gain: 7dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	封装: TO-243AA	库存31,362	15V	5.5GHz	3dB @ 1.8GHz	7dB	1W	70 @ 70mA, 8V	120mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
BFU690F,115	NXP	TRANSISTOR NPN SOT343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: 18GHz Noise Figure (dB Typ @ f): 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz Gain: 15.5dB ~ 18.5dB Power - Max: 230mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 2V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: 4-DFP	封装: SOT-343F	库存81,054	5.5V	18GHz	0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz	15.5dB ~ 18.5dB	230mW	90 @ 20mA, 2V	100mA	150°C (TJ)	Surface Mount	SOT-343F	4-DFP
2224-6P	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1013-20H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RF3358-TP	Micro Commercial Co	Interface Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: -	Request a Quote	18V	6GHz	-	10dB	200mW	130 @ 20mA, 10V	100mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
CP243-CM5943-WN	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 2.4GHz Noise Figure (dB Typ @ f): 8dB @ 200MHz Gain: 11.4dB Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	30V	2.4GHz	8dB @ 200MHz	11.4dB	-	25 @ 50mA, 15V	400mA	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
ON5088	NXP	RF SMALL SIGNAL BIPOLAR TRANSIST Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NSVF5490SKT3G	onsemi	RF-TR 10V 30MA FT=8G NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB @ 1.5GHz Gain: 10dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: SOT-623/SSFP	封装: -	库存22,986	10V	8GHz	1.4dB @ 1.5GHz	10dB	100mW	90 @ 10mA, 5V	30mA	-55°C ~ 150°C (TJ)	Surface Mount	SOT-623F	SOT-623/SSFP
PH3134-10M	MACOM Technology Solutions	TRANSISTOR,BIPOLAR,RADAR,10W,3.1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	封装: -	Request a Quote	60V	-	-	8dB	70W	-	1.2A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
2SC5772FR-TL-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.9dB @ 900MHz Gain: 13dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 5V Current - Collector (Ic) (Max): 75mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-MPAK	封装: -	Request a Quote	9V	9GHz	1.9dB @ 900MHz	13dB	700mW	80 @ 20mA, 5V	75mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK
2SC5998YC-TL-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 10.5GHz Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 100mA, 3V Current - Collector (Ic) (Max): 500mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-MPAK	封装: -	Request a Quote	5V	10.5GHz	-	13dB	700mW	110 @ 100mA, 3V	500mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK
42107HS	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFP650

Infineon Technologies

TRANS NPN RF 4V 150MA SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain: 10.5dB ~ 21.5dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封装: SC-82A, SOT-343

库存5,360

4.5V

37GHz

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

10.5dB ~ 21.5dB

500mW

110 @ 80mA, 3V

150mA

-

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

MS2361

Microsemi Corporation

TRANS RF BIPO 87.5W 2.6A M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 2.6A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

封装: M115

库存6,368

65V

1.025GHz ~ 1.15GHz

-

9dB

87.5W

-

2.6A

200°C (TJ)

Chassis Mount

M115

NE68033-T1B-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

库存193,200

10V

10GHz

1.8dB @ 2GHz

9dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

PZ1418B30U,114

Ampleon USA Inc.

TRANS SOT443A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.6GHz
Noise Figure (dB Typ @ f): -
Gain: 8.4dB
Power - Max: 45W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Flange
Package / Case: SOT-443A
Supplier Device Package: CDFM2

封装: SOT-443A

库存3,088

15V

1.6GHz

-

8.4dB

45W

-

4A

200°C (TJ)

Flange

SOT-443A

CDFM2

UPA802T-T1-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存72,000

10V

7GHz

1.4dB @ 1GHz

12dB

200mW

70 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

KSC1674RTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

库存7,312

20V

600MHz

3dB ~ 5dB @ 100MHz

-

250mW

40 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSC2756OMTF

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 30MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 850MHz
Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
Gain: 15dB ~ 23dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封装: TO-236-3, SC-59, SOT-23-3

库存396,000

20V

850MHz

6.5dB @ 200MHz

15dB ~ 23dB

150mW

90 @ 5mA, 10V

30mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

SD1727

STMicroelectronics

TRANSISTOR NPN RF HF SSB M164

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 233W
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V
Current - Collector (Ic) (Max): 10A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: M164
Supplier Device Package: M164

封装: M164

库存7,504

55V

-

14dB

233W

18 @ 1.4A, 6V

10A

200°C (TJ)

Chassis, Stud Mount

M164

BFQ31ATC

Diodes Incorporated

TRANSISTOR UHF/VHF NPN SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存4,608

15V

600MHz

6dB @ 60MHz

-

330mW

100 @ 3mA, 1V

100mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

AT-32063-TR1

Broadcom Limited

IC TRANS NPN BIPOLAR SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 12.5dB ~ 14.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存835,344

5.5V

-

1.1dB ~ 1.4dB @ 900MHz

12.5dB ~ 14.5dB

150mW

50 @ 5mA, 2.7V

32mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BFG31,115

NXP

TRANS PNP 10V 5GHZ SOT223

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

库存7,120

15V

5GHz

-

1W

25 @ 70mA, 10V

100mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

PH1090-350L

M/A-Com Technology Solutions

TRANSISTOR 350W 1090MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 80V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.32dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 17A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

封装: -

库存3,344

80V

-

8.32dB

350W

-

17A

200°C (TJ)

Chassis Mount

-

MRF392

M/A-Com Technology Solutions

TRANS RF NPN 30V 16A 744A-01

Transistor Type: 2 NPN (Dual) Common Emitter
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 125W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Current - Collector (Ic) (Max): 16A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 744A-01
Supplier Device Package: 744A-01, Style 1

封装: 744A-01

库存5,888

30V

-

10dB

125W

40 @ 1A, 5V

16A

200°C (TJ)

Chassis Mount

744A-01

744A-01, Style 1

SD1275

STMicroelectronics

TRANS NPN RF MICROWAVE VHF M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: M135
Supplier Device Package: M135

封装: M135

库存6,264

16V

-

9dB

70W

20 @ 250mA, 5V

8A

200°C (TJ)

Chassis, Stud Mount

M135

MCH4017-TL-H

ON Semiconductor

TRANS NPN 12V 100MA MCPH4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 17dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH

封装: 4-SMD, Flat Leads

库存2,912

12V

10GHz

1.2dB @ 1GHz

17dB

450mW

60 @ 50mA, 5V

100mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-MCPH

BFR843EL3E6327XTSA1

Infineon Technologies

TRANSISTOR NPN TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.6V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 25.5dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 55mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: TSLP-3-10

封装: 3-XFDFN

库存7,040

2.6V

-

25.5dB

125mW

-

55mA

150°C (TJ)

Surface Mount

3-XFDFN

TSLP-3-10

BFU520R

NXP

TRANS RF NPN 12V 30MA SOT-143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10.5GHz
Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
Gain: 20dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

封装: TO-253-4, TO-253AA

库存5,056

12V

10.5GHz

0.65dB @ 900MHz

20dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

MCH4009-TL-H

ON Semiconductor

TRANS NPN 3.5V 40MA MCPH4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
Gain: 13.5dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH

封装: 4-SMD, Flat Leads

库存36,000

3.5V

25GHz

1.1dB @ 2GHz

13.5dB

120mW

50 @ 5mA, 1V

40mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-MCPH

BFQ19SH6327XTSA1

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3dB @ 1.8GHz
Gain: 7dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

封装: TO-243AA

库存31,362

15V

5.5GHz

3dB @ 1.8GHz

7dB

1W

70 @ 70mA, 8V

120mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

BFU690F,115

NXP

TRANSISTOR NPN SOT343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 18GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
Gain: 15.5dB ~ 18.5dB
Power - Max: 230mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 2V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-DFP

封装: SOT-343F

库存81,054

5.5V

18GHz

0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz

15.5dB ~ 18.5dB

230mW

90 @ 20mA, 2V

100mA

150°C (TJ)

Surface Mount

SOT-343F

4-DFP

2224-6P

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

SD1013-20H

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

RF3358-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: -

Request a Quote

18V

6GHz

-

10dB

200mW

130 @ 20mA, 10V

100mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

CP243-CM5943-WN

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 2.4GHz
Noise Figure (dB Typ @ f): 8dB @ 200MHz
Gain: 11.4dB
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

Request a Quote

30V

2.4GHz

8dB @ 200MHz

11.4dB

-

25 @ 50mA, 15V

400mA

-65°C ~ 150°C (TJ)

Surface Mount

Die

ON5088

NXP

RF SMALL SIGNAL BIPOLAR TRANSIST

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

NSVF5490SKT3G

onsemi

RF-TR 10V 30MA FT=8G NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1.5GHz
Gain: 10dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: SOT-623/SSFP

封装: -

库存22,986

10V

8GHz

1.4dB @ 1.5GHz

10dB

100mW

90 @ 10mA, 5V

30mA

-55°C ~ 150°C (TJ)

Surface Mount

SOT-623F

SOT-623/SSFP

PH3134-10M

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,RADAR,10W,3.1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 70W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

封装: -

Request a Quote

60V

-

8dB

70W

-

1.2A

200°C (TJ)

Chassis Mount

2L-FLG

2SC5772FR-TL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB @ 900MHz
Gain: 13dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 5V
Current - Collector (Ic) (Max): 75mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-MPAK

封装: -

Request a Quote

9V

9GHz

1.9dB @ 900MHz

13dB

700mW

80 @ 20mA, 5V

75mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-MPAK

2SC5998YC-TL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 10.5GHz
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 100mA, 3V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-MPAK

封装: -

Request a Quote

5V

10.5GHz

-

13dB

700mW

110 @ 100mA, 3V

500mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-MPAK

42107HS

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-