页 23 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC3585-T1B-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: TO-236-3, SC-59, SOT-23-3	库存41,316	10V	10GHz	1.8dB @ 2GHz	9dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
SD1013	Microsemi Corporation	TRANS RF BIPO 13W 1A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 13W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M135 Supplier Device Package: M135	封装: M135	库存5,328	35V	150MHz	-	10dB	13W	10 @ 200mA, 5V	1A	200°C (TJ)	Chassis Mount	M135	M135
MS1406	Microsemi Corporation	TRANS RF BIPO 30W 3A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 30W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M135 Supplier Device Package: M135	封装: M135	库存7,120	35V	175MHz	-	8.2dB	30W	10 @ 200mA, 5V	3A	200°C (TJ)	Chassis, Stud Mount	M135	M135
2N2857	Microsemi Corporation	TRANS RF BIPO NPN 15V 40MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	封装: TO-206AF, TO-72-4 Metal Can	库存20,976	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
MRF5812GR1	Microsemi Corporation	TRANS NPN 15V 200MA 8-SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存12,312	15V	5GHz	2dB ~ 3dB @ 500MHz	13dB ~ 15.5dB	1.25W	50 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AT-42036-TR1G	Broadcom Limited	TRANS NPN BIPO 12V 80MA 36-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz Gain: 10dB ~ 13.5dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (36 micro-X) Supplier Device Package: 36 micro-X	封装: 4-SMD (36 micro-X)	库存5,968	12V	8GHz	2dB ~ 3dB @ 2GHz ~ 4GHz	10dB ~ 13.5dB	600mW	30 @ 35mA, 8V	80mA	150°C (TJ)	Surface Mount	4-SMD (36 micro-X)	36 micro-X
AT-41486-TR1G	Broadcom Limited	TRANS NPN BIPO 12V 60MA 86-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain: 9dB ~ 18dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	封装: SOT-86	库存188,040	12V	8GHz	1.4dB ~ 3dB @ 1GHz ~ 4GHz	9dB ~ 18dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
AT-41511-BLKG	Broadcom Limited	TRANS NPN BIPO 12V 50MA SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz Gain: 11dB ~ 15.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	封装: TO-253-4, TO-253AA	库存5,200	12V	-	1dB ~ 1.7dB @ 900MHz ~ 2.4GHz	11dB ~ 15.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
AT-64020	Broadcom Limited	TRANS NPN BIPO 20V 200MA 200-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (200 mil BeO) Supplier Device Package: -	封装: 4-SMD (200 mil BeO)	库存6,864	20V	-	-	-	3W	20 @ 110mA, 8V	200mA	200°C (TJ)	Surface Mount	4-SMD (200 mil BeO)	-
BF240	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 40V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA)	库存44,400	40V	1.1GHz	-	-	350mW	65 @ 1mA, 10V	50mA	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N5770_D75Z	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 15V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA)	库存2,240	15V	-	6dB @ 60MHz	15dB	350mW	50 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
NE85639R-T1-A	CEL	TRANSISTOR NPN 1GHZ SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz Gain: 13.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	封装: SOT-143R	库存3,584	12V	9GHz	1.5dB ~ 2.1dB @ 1GHz	13.5dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
2N5770	Fairchild/ON Semiconductor	IC TRANS NPN SS RF 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA)	库存6,128,100	15V	-	6dB @ 60MHz	15dB	350mW	50 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BF771E6327HTSA1	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10dB ~ 15dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存5,152	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	10dB ~ 15dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
ITC1100	Microsemi Corporation	TRANS RF BIPO 65V 80A 55SW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz Noise Figure (dB Typ @ f): - Gain: 10dB ~ 10.5dB Power - Max: 3400W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 80A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55SW Supplier Device Package: 55SW	封装: 55SW	库存5,648	65V	1.03GHz	-	10dB ~ 10.5dB	3400W	10 @ 5A, 5V	80A	200°C (TJ)	Chassis Mount	55SW	55SW
DME400A	Microsemi Corporation	TRANSISTOR BIPO 55AW-1 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,344	-	-	-	-	-	-	-	-	-	-	-
DME375A	Microsemi Corporation	TRANS RF BIPO 875W 30A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	封装: 55AW	库存3,776	55V	1.025GHz ~ 1.15GHz	-	6.5dB	875W	10 @ 300mA, 5V	30A	200°C (TJ)	Chassis Mount	55AW	55AW
MDS60L	Microsemi Corporation	TRANS RF BIPO 120W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 120W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	封装: 55AW	库存3,808	65V	1.03GHz ~ 1.09GHz	-	10dB	120W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW
UTV040	Microsemi Corporation	TRANS RF BIPO 25W 2.5A 55FT-7 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	封装: 55FT	库存6,112	25V	470MHz ~ 860MHz	-	9dB	25W	10 @ 500mA, 5V	2.5A	200°C (TJ)	Chassis, Stud Mount	55FT	55FT
BLT50,115	NXP	TRANS NPN 7.5V SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 470MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	封装: TO-261-4, TO-261AA	库存20,304	10V	470MHz	-	-	2W	25 @ 300mA, 5V	500mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BFR 740L3RH E6327	Infineon Technologies	TRANS RF BIPO NPN 30MA TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz Gain: 24.5dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	封装: SC-101, SOT-883	库存7,312	4.7V	42GHz	0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz	24.5dB	160mW	160 @ 25mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM-USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 13dB ~ 7dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	封装: SC-70, SOT-323	库存54,900	10V	10GHz	1.8dB @ 2GHz	13dB ~ 7dB	100mW	80 @ 7mA, 6V	15mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
55GN01CA-TB-E	ON Semiconductor	TRANS NPN BIPOLAR 10V 70MA CP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Gain: 9.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	封装: TO-236-3, SC-59, SOT-23-3	库存432,000	10V	4.5GHz	1.9dB @ 1GHz	9.5dB	200mW	100 @ 10mA, 5V	70mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
KST10MTF	Fairchild/ON Semiconductor	TRANS NPN 25V 350MW SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存533,760	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SC5508-T2B-A	Renesas Electronics Corporation	NPN RF TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NESG2021M16-T3-A	Renesas Electronics Corporation	RF SMALL SIGNAL TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz Gain: 10dB ~ 18dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: M16, 1208	封装: -	Request a Quote	5V	25GHz	0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz	10dB ~ 18dB	175mW	130 @ 5mA, 2V	35mA	-	Surface Mount	6-SMD, Flat Leads	M16, 1208
PN3563-PBFREE	Central Semiconductor Corp	RF TRANS NPN 12V TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封装: -	库存34,065	12V	-	-	-	-	-	-	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N3496	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 80V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	封装: -	Request a Quote	80V	250MHz	-	-	600mW	35 @ 100mA, 10V	100mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
BFR92PE6530HTSA1	Infineon Technologies	RF LOW-NOISE SI TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CP229-2N5109-CT	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: 11dB Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	20V	1.2GHz	3dB @ 200MHz	11dB	-	40 @ 50mA, 15V	400mA	-65°C ~ 200°C (TJ)	Surface Mount	Die	Die

2SC3585-T1B-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

库存41,316

10V

10GHz

1.8dB @ 2GHz

9dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

SD1013

Microsemi Corporation

TRANS RF BIPO 13W 1A M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 13W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M135
Supplier Device Package: M135

封装: M135

库存5,328

35V

150MHz

-

10dB

13W

10 @ 200mA, 5V

1A

200°C (TJ)

Chassis Mount

M135

MS1406

Microsemi Corporation

TRANS RF BIPO 30W 3A M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB
Power - Max: 30W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: M135
Supplier Device Package: M135

封装: M135

库存7,120

35V

175MHz

-

8.2dB

30W

10 @ 200mA, 5V

3A

200°C (TJ)

Chassis, Stud Mount

M135

2N2857

Microsemi Corporation

TRANS RF BIPO NPN 15V 40MA TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 12.5dB ~ 21dB @ 450MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

封装: TO-206AF, TO-72-4 Metal Can

库存20,976

15V

500MHz

4.5dB @ 450MHz

12.5dB ~ 21dB @ 450MHz

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

MRF5812GR1

Microsemi Corporation

TRANS NPN 15V 200MA 8-SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存12,312

15V

5GHz

2dB ~ 3dB @ 500MHz

13dB ~ 15.5dB

1.25W

50 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AT-42036-TR1G

Broadcom Limited

TRANS NPN BIPO 12V 80MA 36-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz
Gain: 10dB ~ 13.5dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD (36 micro-X)
Supplier Device Package: 36 micro-X

封装: 4-SMD (36 micro-X)

库存5,968

12V

8GHz

2dB ~ 3dB @ 2GHz ~ 4GHz

10dB ~ 13.5dB

600mW

30 @ 35mA, 8V

80mA

150°C (TJ)

Surface Mount

4-SMD (36 micro-X)

36 micro-X

AT-41486-TR1G

Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Gain: 9dB ~ 18dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic

封装: SOT-86

库存188,040

12V

8GHz

1.4dB ~ 3dB @ 1GHz ~ 4GHz

9dB ~ 18dB

500mW

30 @ 10mA, 8V

60mA

150°C (TJ)

Surface Mount

SOT-86

86 Plastic

AT-41511-BLKG

Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
Gain: 11dB ~ 15.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

封装: TO-253-4, TO-253AA

库存5,200

12V

-

1dB ~ 1.7dB @ 900MHz ~ 2.4GHz

11dB ~ 15.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

AT-64020

Broadcom Limited

TRANS NPN BIPO 20V 200MA 200-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD (200 mil BeO)
Supplier Device Package: -

封装: 4-SMD (200 mil BeO)

库存6,864

20V

-

3W

20 @ 110mA, 8V

200mA

200°C (TJ)

Surface Mount

4-SMD (200 mil BeO)

-

BF240

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 40V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

库存44,400

40V

1.1GHz

-

350mW

65 @ 1mA, 10V

50mA

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N5770_D75Z

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 15V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

库存2,240

15V

-

6dB @ 60MHz

15dB

350mW

50 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

NE85639R-T1-A

CEL

TRANSISTOR NPN 1GHZ SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Gain: 13.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

封装: SOT-143R

库存3,584

12V

9GHz

1.5dB ~ 2.1dB @ 1GHz

13.5dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

SOT-143R

2N5770

Fairchild/ON Semiconductor

IC TRANS NPN SS RF 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

库存6,128,100

15V

-

6dB @ 60MHz

15dB

350mW

50 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BF771E6327HTSA1

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 10dB ~ 15dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存5,152

12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

10dB ~ 15dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

ITC1100

Microsemi Corporation

TRANS RF BIPO 65V 80A 55SW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB ~ 10.5dB
Power - Max: 3400W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 80A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55SW
Supplier Device Package: 55SW

封装: 55SW

库存5,648

65V

1.03GHz

-

10dB ~ 10.5dB

3400W

10 @ 5A, 5V

80A

200°C (TJ)

Chassis Mount

55SW

DME400A

Microsemi Corporation

TRANSISTOR BIPO 55AW-1

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,344

-

DME375A

Microsemi Corporation

TRANS RF BIPO 875W 30A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

封装: 55AW

库存3,776

55V

1.025GHz ~ 1.15GHz

-

6.5dB

875W

10 @ 300mA, 5V

30A

200°C (TJ)

Chassis Mount

55AW

MDS60L

Microsemi Corporation

TRANS RF BIPO 120W 4A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 120W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

封装: 55AW

库存3,808

65V

1.03GHz ~ 1.09GHz

-

10dB

120W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55AW

UTV040

Microsemi Corporation

TRANS RF BIPO 25W 2.5A 55FT-7

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

封装: 55FT

库存6,112

25V

470MHz ~ 860MHz

-

9dB

25W

10 @ 500mA, 5V

2.5A

200°C (TJ)

Chassis, Stud Mount

55FT

BLT50,115

NXP

TRANS NPN 7.5V SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 470MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

库存20,304

10V

470MHz

-

2W

25 @ 300mA, 5V

500mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BFR 740L3RH E6327

Infineon Technologies

TRANS RF BIPO NPN 30MA TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain: 24.5dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

封装: SC-101, SOT-883

库存7,312

4.7V

42GHz

0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz

24.5dB

160mW

160 @ 25mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

2SC5095-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 13dB ~ 7dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

封装: SC-70, SOT-323

库存54,900

10V

10GHz

1.8dB @ 2GHz

13dB ~ 7dB

100mW

80 @ 7mA, 6V

15mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70

55GN01CA-TB-E

ON Semiconductor

TRANS NPN BIPOLAR 10V 70MA CP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Gain: 9.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

封装: TO-236-3, SC-59, SOT-23-3

库存432,000

10V

4.5GHz

1.9dB @ 1GHz

9.5dB

200mW

100 @ 10mA, 5V

70mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

KST10MTF

Fairchild/ON Semiconductor

TRANS NPN 25V 350MW SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存533,760

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SC5508-T2B-A

Renesas Electronics Corporation

NPN RF TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

NESG2021M16-T3-A

Renesas Electronics Corporation

RF SMALL SIGNAL TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
Gain: 10dB ~ 18dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: M16, 1208

封装: -

Request a Quote

5V

25GHz

0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz

10dB ~ 18dB

175mW

130 @ 5mA, 2V

35mA

-

Surface Mount

6-SMD, Flat Leads

M16, 1208

PN3563-PBFREE

Central Semiconductor Corp

RF TRANS NPN 12V TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封装: -

库存34,065

12V

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N3496

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 80V
Frequency - Transition: 250MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

封装: -

Request a Quote

80V

250MHz

-

600mW

35 @ 100mA, 10V

100mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

BFR92PE6530HTSA1

Infineon Technologies

RF LOW-NOISE SI TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

CP229-2N5109-CT

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: 11dB
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

Request a Quote

20V

1.2GHz

3dB @ 200MHz

11dB

-

40 @ 50mA, 15V

400mA

-65°C ~ 200°C (TJ)

Surface Mount

Die