页 24 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BGR405H6327XTSA1	Infineon Technologies	TRANS RF NPN 5V 12MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz Gain: - Power - Max: 50mW DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 12mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封装: SC-82A, SOT-343	库存4,384	5V	-	1dB ~ 1.6dB @ 400MHz ~ 1.8GHz	-	50mW	-	12mA	-65°C ~ 150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFS 483 E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存3,728	12V	8GHz	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	19dB	450mW	70 @ 15mA, 8V	65mA	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
BFS 380L6 E6327	Infineon Technologies	TRANSISTOR GP BJT NPN 6V TSLP-6 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz Gain: 8dB ~ 12dB Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: PG-TSLP-6	封装: 6-XFDFN	库存4,528	9V	14GHz	1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz	8dB ~ 12dB	380mW	60 @ 40mA, 3V	80mA	150°C (TJ)	Surface Mount	6-XFDFN	PG-TSLP-6
BFR 360T E6327	Infineon Technologies	TRANSISTOR RF NPN 6V SC-75 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Gain: 13.5dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	封装: SC-75, SOT-416	库存2,352	9V	14GHz	1dB @ 1.8GHz	13.5dB	210mW	60 @ 15mA, 3V	35mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	PG-SC-75
NE46134-T1-QR-AZ	CEL	SAME AS 2SC4536 NPN SILICON MEDI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 7dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	封装: TO-243AA	库存3,984	15V	5.5GHz	1.5dB ~ 2dB @ 500MHz ~ 1GHz	7dB	2W	40 @ 50mA, 10V	250mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2N2857UB	Microsemi Corporation	TRANS NPN 15V 0.04A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	封装: 3-SMD, No Lead	库存3,936	15V	-	4.5dB @ 450MHz	21dB	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2SC5750-T1-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	封装: SC-82A, SOT-343	库存2,032	6V	15GHz	1.7dB @ 2GHz	15dB	200mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
2SC5015-T1-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	封装: SC-82A, SOT-343	库存140,484	6V	12GHz	1.5dB @ 2GHz	11dB	150mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
MRF545	Microsemi Corporation	TRANS RF BIPO 3.5W 400MA TO39 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 3.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	封装: TO-205AD, TO-39-3 Metal Can	库存3,168	70V	1GHz ~ 1.4GHz	-	14dB	3.5W	15 @ 50mA, 6V	400mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MRF581AG	Microsemi Corporation	TRANS RF NPN 5GHZ 15V MACR0 X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Macro-X Supplier Device Package: Macro-X	封装: Macro-X	库存5,744	15V	5GHz	3dB ~ 3.5dB @ 500MHz	13dB ~ 15.5dB	1.25W	90 @ 50mA, 5V	200mA	150°C (TJ)	Surface Mount	Macro-X	Macro-X
BLW96/01,112	Ampleon USA Inc.	TRANSISTOR HF/VHF NPN SOT121B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 235MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 340W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 7A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-121B Supplier Device Package: CRFM4	封装: SOT-121B	库存4,176	55V	235MHz	-	-	340W	15 @ 7A, 5V	12A	200°C (TJ)	Surface Mount	SOT-121B	CRFM4
MRF581	Microsemi Corporation	TRANS NPN 18V 200MA MACRO X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	封装: Micro-X ceramic (84C)	库存5,808	18V	5GHz	3dB ~ 3.5dB @ 500MHz	13dB ~ 15.5dB	1.25W	50 @ 50mA, 5V	200mA	150°C (TJ)	Surface Mount	Micro-X ceramic (84C)	Micro-X ceramic (84C)
PN3563_D26Z	Fairchild/ON Semiconductor	TRANS RF NPN 15V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): - Gain: 14dB ~ 26dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	库存5,648	15V	1.5GHz	-	14dB ~ 26dB	350mW	20 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BF199_J35Z	Fairchild/ON Semiconductor	TRANS RF NPN 25V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	库存4,048	25V	1.1GHz	-	-	350mW	38 @ 7mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPSH10RLRPG	ON Semiconductor	TRANS NPN VHF/UHF SS 25V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	库存45,720	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
NE68130-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 9dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封装: SC-70, SOT-323	库存4,256	10V	7GHz	1.4dB @ 1GHz	9dB	150mW	40 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
HFA3128R96	Intersil	IC TRANS ARRAY 5X PND 16QFN Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	封装: 16-VFQFN Exposed Pad	库存5,376	15V	5.5GHz	3.5dB @ 1GHz	-	150mW	20 @ 10mA, 2V	65mA	175°C (TJ)	Surface Mount	16-VFQFN Exposed Pad	16-QFN (3x3)
BF240_D74Z	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 40V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	库存3,648	40V	1.1GHz	-	-	350mW	65 @ 1mA, 10V	50mA	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
HFA3135IH96	Intersil	IC TRANS ARRAY PNP MATCH SOT23-6 Transistor Type: 2 PNP (Dual) Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 5.2dB @ 900MHz Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10mA, 2V Current - Collector (Ic) (Max): 26mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	封装: SOT-23-6	库存6,012	9V	7GHz	5.2dB @ 900MHz	-	-	15 @ 10mA, 2V	26mA	150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
BFP410H6327XTSA1	Infineon Technologies	TRANS RF NPN 25GHZ 4.5V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 21.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	封装: SC-82A, SOT-343	库存4,000	5V	25GHz	1.2dB @ 2GHz	21.5dB	150mW	60 @ 13mA, 2V	40mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
MDS500L	Microsemi Corporation	TRANS RF BIPO 833W 24A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 9.2dB Power - Max: 833W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	封装: 55ST	库存7,872	70V	1.03GHz ~ 1.09GHz	-	9.2dB	833W	20 @ 1A, 5V	24A	200°C (TJ)	Chassis Mount	55ST	55ST
MDS70	Microsemi Corporation	TRANS RF BIPO 225W 5A 55CX1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10.3dB ~ 11.65dB Power - Max: 225W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	封装: 55CX	库存4,480	65V	1.03GHz ~ 1.09GHz	-	10.3dB ~ 11.65dB	225W	20 @ 500mA, 5V	5A	200°C (TJ)	Chassis Mount	55CX	55CX
MPSH81	Fairchild/Micross Components	DIE TRANSISTOR RF PNP Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,992	-	-	-	-	-	-	-	-	-	-	-
BFU790F,115	NXP	TRANSISTOR NPN SOT343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz Gain: - Power - Max: 234mW DC Current Gain (hFE) (Min) @ Ic, Vce: 235 @ 10mA, 2V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: 4-DFP	封装: SOT-343F	库存5,184	2.8V	25GHz	0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz	-	234mW	235 @ 10mA, 2V	100mA	150°C (TJ)	Surface Mount	SOT-343F	4-DFP
BFP740E6327	Infineon Technologies	RF TRANSISTOR, X BAND, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz Gain: 27dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封装: -	Request a Quote	4.7V	42GHz	0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz	27dB	160mW	160 @ 25mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
MT3S111P-TE12L-F	Toshiba Semiconductor and Storage	RF TRANS NPN 6V 8GHZ PW-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.25dB @ 1GHz Gain: 10.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	封装: -	Request a Quote	6V	8GHz	1.25dB @ 1GHz	10.5dB	1W	200 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI
58048	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC5008-A	CEL	RF TRANS NPN 10V 8GHZ SOT523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 7.5dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: -	封装: -	Request a Quote	10V	8GHz	1.9dB @ 2GHz	7.5dB	125mW	80 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SOT-523	-
NTE65	NTE Electronics, Inc	RF TRANS NPN 15V 5GHZ 3SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz Gain: 18dB Power - Max: 180mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 14mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Lead Supplier Device Package: 3-SMD	封装: -	Request a Quote	15V	5GHz	2.4dB ~ 3dB @ 500MHz ~ 1GHz	18dB	180mW	25 @ 14mA, 10V	30mA	-	Surface Mount	3-SMD, Flat Lead	3-SMD
HSG1002VE-TL-E	Renesas Electronics Corporation	RF 0.035A C BAND GERMANIUM NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 38GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz Gain: 8dB ~ 19.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-MFPAK	封装: -	Request a Quote	3.5V	38GHz	0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz	8dB ~ 19.5dB	200mW	100 @ 5mA, 2V	35mA	-	Surface Mount	4-SMD, Gull Wing	4-MFPAK

BGR405H6327XTSA1

Infineon Technologies

TRANS RF NPN 5V 12MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
Gain: -
Power - Max: 50mW
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 12mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封装: SC-82A, SOT-343

库存4,384

5V

-

1dB ~ 1.6dB @ 400MHz ~ 1.8GHz

-

50mW

-

12mA

-65°C ~ 150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFS 483 E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 19dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存3,728

12V

8GHz

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

19dB

450mW

70 @ 15mA, 8V

65mA

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

BFS 380L6 E6327

Infineon Technologies

TRANSISTOR GP BJT NPN 6V TSLP-6

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
Gain: 8dB ~ 12dB
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: PG-TSLP-6

封装: 6-XFDFN

库存4,528

9V

14GHz

1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz

8dB ~ 12dB

380mW

60 @ 40mA, 3V

80mA

150°C (TJ)

Surface Mount

6-XFDFN

PG-TSLP-6

BFR 360T E6327

Infineon Technologies

TRANSISTOR RF NPN 6V SC-75

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 13.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

封装: SC-75, SOT-416

库存2,352

9V

14GHz

1dB @ 1.8GHz

13.5dB

210mW

60 @ 15mA, 3V

35mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

PG-SC-75

NE46134-T1-QR-AZ

CEL

SAME AS 2SC4536 NPN SILICON MEDI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Gain: 7dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

封装: TO-243AA

库存3,984

15V

5.5GHz

1.5dB ~ 2dB @ 500MHz ~ 1GHz

7dB

2W

40 @ 50mA, 10V

250mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2N2857UB

Microsemi Corporation

TRANS NPN 15V 0.04A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 21dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

封装: 3-SMD, No Lead

库存3,936

15V

-

4.5dB @ 450MHz

21dB

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2SC5750-T1-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 15dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

封装: SC-82A, SOT-343

库存2,032

6V

15GHz

1.7dB @ 2GHz

15dB

200mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

2SC5015-T1-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 11dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

封装: SC-82A, SOT-343

库存140,484

6V

12GHz

1.5dB @ 2GHz

11dB

150mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

MRF545

Microsemi Corporation

TRANS RF BIPO 3.5W 400MA TO39

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 3.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

封装: TO-205AD, TO-39-3 Metal Can

库存3,168

70V

1GHz ~ 1.4GHz

-

14dB

3.5W

15 @ 50mA, 6V

400mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MRF581AG

Microsemi Corporation

TRANS RF NPN 5GHZ 15V MACR0 X

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Macro-X
Supplier Device Package: Macro-X

封装: Macro-X

库存5,744

15V

5GHz

3dB ~ 3.5dB @ 500MHz

13dB ~ 15.5dB

1.25W

90 @ 50mA, 5V

200mA

150°C (TJ)

Surface Mount

Macro-X

BLW96/01,112

Ampleon USA Inc.

TRANSISTOR HF/VHF NPN SOT121B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 235MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 340W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 7A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-121B
Supplier Device Package: CRFM4

封装: SOT-121B

库存4,176

55V

235MHz

-

340W

15 @ 7A, 5V

12A

200°C (TJ)

Surface Mount

SOT-121B

CRFM4

MRF581

Microsemi Corporation

TRANS NPN 18V 200MA MACRO X

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Micro-X ceramic (84C)
Supplier Device Package: Micro-X ceramic (84C)

封装: Micro-X ceramic (84C)

库存5,808

18V

5GHz

3dB ~ 3.5dB @ 500MHz

13dB ~ 15.5dB

1.25W

50 @ 50mA, 5V

200mA

150°C (TJ)

Surface Mount

Micro-X ceramic (84C)

PN3563_D26Z

Fairchild/ON Semiconductor

TRANS RF NPN 15V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): -
Gain: 14dB ~ 26dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

库存5,648

15V

1.5GHz

-

14dB ~ 26dB

350mW

20 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BF199_J35Z

Fairchild/ON Semiconductor

TRANS RF NPN 25V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

库存4,048

25V

1.1GHz

-

350mW

38 @ 7mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPSH10RLRPG

ON Semiconductor

TRANS NPN VHF/UHF SS 25V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

库存45,720

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

NE68130-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 9dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封装: SC-70, SOT-323

库存4,256

10V

7GHz

1.4dB @ 1GHz

9dB

150mW

40 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

HFA3128R96

Intersil

IC TRANS ARRAY 5X PND 16QFN

Transistor Type: 5 PNP
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-QFN (3x3)

封装: 16-VFQFN Exposed Pad

库存5,376

15V

5.5GHz

3.5dB @ 1GHz

-

150mW

20 @ 10mA, 2V

65mA

175°C (TJ)

Surface Mount

16-VFQFN Exposed Pad

16-QFN (3x3)

BF240_D74Z

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 40V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

库存3,648

40V

1.1GHz

-

350mW

65 @ 1mA, 10V

50mA

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

HFA3135IH96

Intersil

IC TRANS ARRAY PNP MATCH SOT23-6

Transistor Type: 2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 5.2dB @ 900MHz
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10mA, 2V
Current - Collector (Ic) (Max): 26mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

封装: SOT-23-6

库存6,012

9V

7GHz

5.2dB @ 900MHz

-

15 @ 10mA, 2V

26mA

150°C (TJ)

Surface Mount

SOT-23-6

BFP410H6327XTSA1

Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 21.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

封装: SC-82A, SOT-343

库存4,000

5V

25GHz

1.2dB @ 2GHz

21.5dB

150mW

60 @ 13mA, 2V

40mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

MDS500L

Microsemi Corporation

TRANS RF BIPO 833W 24A 55ST1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 9.2dB
Power - Max: 833W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST

封装: 55ST

库存7,872

70V

1.03GHz ~ 1.09GHz

-

9.2dB

833W

20 @ 1A, 5V

24A

200°C (TJ)

Chassis Mount

55ST

MDS70

Microsemi Corporation

TRANS RF BIPO 225W 5A 55CX1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10.3dB ~ 11.65dB
Power - Max: 225W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX

封装: 55CX

库存4,480

65V

1.03GHz ~ 1.09GHz

-

10.3dB ~ 11.65dB

225W

20 @ 500mA, 5V

5A

200°C (TJ)

Chassis Mount

55CX

MPSH81

Fairchild/Micross Components

DIE TRANSISTOR RF PNP

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,992

-

BFU790F,115

NXP

TRANSISTOR NPN SOT343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.8V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Gain: -
Power - Max: 234mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 235 @ 10mA, 2V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-DFP

封装: SOT-343F

库存5,184

2.8V

25GHz

0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz

-

234mW

235 @ 10mA, 2V

100mA

150°C (TJ)

Surface Mount

SOT-343F

4-DFP

BFP740E6327

Infineon Technologies

RF TRANSISTOR, X BAND, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Gain: 27dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封装: -

Request a Quote

4.7V

42GHz

0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz

27dB

160mW

160 @ 25mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

MT3S111P-TE12L-F

Toshiba Semiconductor and Storage

RF TRANS NPN 6V 8GHZ PW-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1GHz
Gain: 10.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

封装: -

Request a Quote

6V

8GHz

1.25dB @ 1GHz

10.5dB

1W

200 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

TO-243AA

PW-MINI

58048

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

2SC5008-A

CEL

RF TRANS NPN 10V 8GHZ SOT523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 7.5dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: -

封装: -

Request a Quote

10V

8GHz

1.9dB @ 2GHz

7.5dB

125mW

80 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SOT-523

-

NTE65

NTE Electronics, Inc

RF TRANS NPN 15V 5GHZ 3SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
Gain: 18dB
Power - Max: 180mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 14mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Lead
Supplier Device Package: 3-SMD

封装: -

Request a Quote

15V

5GHz

2.4dB ~ 3dB @ 500MHz ~ 1GHz

18dB

180mW

25 @ 14mA, 10V

30mA

-

Surface Mount

3-SMD, Flat Lead

3-SMD

HSG1002VE-TL-E

Renesas Electronics Corporation

RF 0.035A C BAND GERMANIUM NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 38GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain: 8dB ~ 19.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-MFPAK

封装: -

Request a Quote

3.5V

38GHz

0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz

8dB ~ 19.5dB

200mW

100 @ 5mA, 2V

35mA

-

Surface Mount

4-SMD, Gull Wing

4-MFPAK