页 28 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - 双极 (BJT) - 射频

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图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot MRF553
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11.5dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,224
16V
175MHz
-
11.5dB
3W
30 @ 250mA, 5V
500mA
-
-
-
-
2SC3357-T1-RF-A
CEL

SAME AS NE85634 NPN SILICON MEDI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封装: TO-243AA
库存3,552
12V
6.5GHz
1.8dB @ 1GHz
10dB
1.2W
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
NE46234-T1-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
  • Gain: 8.3dB
  • Power - Max: 1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封装: TO-243AA
库存5,424
12V
6GHz
2.3dB @ 1GHz
8.3dB
1.8W
50 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
NE85639-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
封装: TO-253-4, TO-253AA
库存3,392
12V
9GHz
1.1dB @ 1GHz
13dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
NE85618-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
封装: SC-82A, SOT-343
库存4,288
12V
6.5GHz
1.1dB @ 1GHz
13dB
150mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
NE681M13-A
CEL

TRANSISTOR NPN 1GHZ M13

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2.7dB @ 1GHz
  • Gain: -
  • Power - Max: 140mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-3
  • Supplier Device Package: M13
封装: SOT-3
库存6,512
10V
7GHz
1.4dB ~ 2.7dB @ 1GHz
-
140mW
80 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SOT-3
M13
HFA3127R
Intersil

IC TRANS ARRAY 5X NPN 16QFN

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VFQFN Exposed Pad
  • Supplier Device Package: 16-QFN (3x3)
封装: 16-VFQFN Exposed Pad
库存5,536
12V
8GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V
65mA
175°C (TJ)
Surface Mount
16-VFQFN Exposed Pad
16-QFN (3x3)
ZTX325STOA
Diodes Incorporated

TRANSISTOR RF NPN E-LINE

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 5dB @ 500MHz
  • Gain: 53dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
封装: E-Line-3, Formed Leads
库存3,296
15V
1.3GHz
5dB @ 500MHz
53dB
350mW
25 @ 2mA, 1V
50mA
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
hot MPS5179
ON Semiconductor

TRANS NPN RF SS 12V TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA)
库存62,244
12V
2GHz
-
-
200mW
25 @ 3mA, 1V
50mA
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BFG520W/X,115
NXP

TRANS NPN 70MA 15V 9GHZ SOT343N

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343 Reverse Pinning
  • Supplier Device Package: 4-SO
封装: SOT-343 Reverse Pinning
库存6,352
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
500mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
SOT-343 Reverse Pinning
4-SO
MDS140L
Microsemi Corporation

TRANS RF BIPO 500W 12A 55AW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
封装: 55AW
库存4,064
70V
1.03GHz ~ 1.09GHz
-
9.5dB
500W
20 @ 1A, 5V
12A
200°C (TJ)
Chassis Mount
55AW
55AW
UMIL10
Microsemi Corporation

TRANS RF BIPO 28W 1.5A 55FT2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 100MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 28W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
封装: 55FT
库存4,432
30V
100MHz ~ 400MHz
-
10dB
28W
10 @ 200mA, 5V
1.5A
200°C (TJ)
Chassis, Stud Mount
55FT
55FT
1000MP
Microsemi Corporation

TRANS RF BIPO 5.3W 300MA 55FW

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.8dB
  • Power - Max: 5.3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW
  • Supplier Device Package: 55FW
封装: 55FW
库存5,392
-
1.15GHz
-
10.8dB
5.3W
15 @ 100mA, 5V
300mA
-
Chassis Mount
55FW
55FW
BFS25A,115
NXP

TRANS NPN 5V 6.5MA SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
  • Gain: -
  • Power - Max: 32mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
  • Current - Collector (Ic) (Max): 6.5mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
封装: SC-70, SOT-323
库存2,352
5V
5GHz
1.8dB ~ 2dB @ 1GHz
-
32mW
50 @ 500µA, 1V
6.5mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
hot AT-30511-TR1G
Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
  • Gain: 14dB ~ 16dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 8mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
封装: TO-253-4, TO-253AA
库存843,360
5.5V
-
1.1dB ~ 1.4dB @ 900MHz
14dB ~ 16dB
100mW
70 @ 1mA, 2.7V
8mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot AT-30533-TR1G
Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
  • Gain: 11dB ~ 13dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 8mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存1,180,200
5.5V
-
1.1dB ~ 1.4dB @ 900MHz
11dB ~ 13dB
100mW
70 @ 1mA, 2.7V
8mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
55GN01MA-TL-E
ON Semiconductor

TRANS NPN BIPO 70MA 10V MCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 4.5GHz ~ 5.5GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
  • Gain: 10dB @ 1GHz
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-MCP
封装: SC-70, SOT-323
库存3,696
10V
4.5GHz ~ 5.5GHz
1.9dB @ 1GHz
10dB @ 1GHz
400mW
100 @ 10mA, 5V
70mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
3-MCP
hot MRF455
M/A-Com Technology Solutions

TRANS RF NPN 18V 15A 211-07

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 60W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-07
  • Supplier Device Package: 211-07, STYLE 1
封装: 211-07
库存3,312
18V
-
-
13dB
60W
10 @ 5A, 5V
15A
-
Chassis Mount
211-07
211-07, STYLE 1
BFP720ESDH6327XTSA1
Infineon Technologies

TRANS RF NPN 43GHZ 4.7V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 43GHz
  • Noise Figure (dB Typ @ f): 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz
  • Gain: 11dB ~ 30.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
封装: SC-82A, SOT-343
库存4,464
4.7V
43GHz
0.55dB ~ 1.55dB @ 150MHz ~ 10GHz
11dB ~ 30.5dB
100mW
160 @ 15mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
BFP640FH6327XTSA1
Infineon Technologies

TRANS RF NPN 4.5V 50MA 4TSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 40GHz
  • Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
  • Gain: 23dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
封装: 4-SMD, Flat Leads
库存3,072
4.5V
40GHz
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
23dB
200mW
110 @ 30mA, 3V
50mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
HFA3127RZ
Intersil

IC TRANS ARRAY 5X NPN 16-QFN

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VFQFN Exposed Pad
  • Supplier Device Package: 16-QFN (3x3)
封装: 16-VFQFN Exposed Pad
库存12,264
12V
8GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V
65mA
175°C (TJ)
Surface Mount
16-VFQFN Exposed Pad
16-QFN (3x3)
hot SS9018HBU
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 30V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 97 @ 1mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA)
库存16,800
15V
1.1GHz
-
-
400mW
97 @ 1mA, 5V
50mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PH1214-6M
MACOM Technology Solutions

TRANSISTOR,BIPOLAR,6W,1.20-1.40_

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 30W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: 2L-FLG
封装: -
Request a Quote
65V
1.4GHz
-
7dB
30W
-
1.5A
200°C (TJ)
Chassis Mount
2L-FLG
2L-FLG
2SC5454-A
CEL

RF TRANS NPN 6V 14.5GHZ SOT143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 14.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: -
封装: -
Request a Quote
6V
14.5GHz
1.5dB @ 2GHz
12dB
200mW
75 @ 20mA, 3V
50mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
-
BLS3135-65I
Ampleon USA Inc.

MICROWAVE POWER TRANSISTOR (AMPL

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 3.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 200W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-422A
  • Supplier Device Package: SOT422A
封装: -
Request a Quote
75V
3.5GHz
-
7dB
200W
40 @ 2A, 5V
8A
200°C (TJ)
Chassis Mount
SOT-422A
SOT422A
2SC3775-4-TB-E
Sanyo

NPN EPITAXIAL PLANAR SILICON

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 900MHz
  • Gain: 14dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
封装: -
Request a Quote
12V
5GHz
1.5dB @ 900MHz
14dB
250mW
100 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
2SA1778-3-TB-E
onsemi

PNP TRANSISTOR

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 400MHz
  • Gain: 13dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
封装: -
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15V
1.2GHz
2.5dB @ 400MHz
13dB
250mW
60 @ 5mA, 10V
50mA
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
2SC5754-A
CEL

RF TRANS NPN 5V 20GHZ SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 20GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 735mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: -
封装: -
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5V
20GHz
-
12dB
735mW
40 @ 100mA, 3V
500mA
150°C (TJ)
Surface Mount
SOT-343F
-
UPA901TU-T3-A
Renesas Electronics Corporation

RF SMALL SIGNAL TRANSISTOR

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 410mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 6mA, 3V / 80 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 75mA, 250mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: 8-MINIMOLD
封装: -
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4.5V
-
-
-
410mW
80 @ 6mA, 3V / 80 @ 20mA, 3V
75mA, 250mA
-
Surface Mount
8-SMD, Flat Lead Exposed Pad
8-MINIMOLD
BFS-17P-E8211
Infineon Technologies

RF TRANS NPN SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
封装: -
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15V
1.4GHz
3.5dB @ 800MHz
-
280mW
40 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23