页 55 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - 双极 (BJT) - 射频

记录 1,633
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图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JANTX2N2857UB
Microsemi Corporation

TRANS NPN 15V 0.04A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 21dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封装: 3-SMD, No Lead
库存6,368
15V
-
4.5dB @ 450MHz
21dB
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
AT-41535G
Broadcom Limited

TRANSISTOR NPN BIPOLAR 35MICRO-X

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz
  • Gain: 10dB ~ 18dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD (35 micro-X)
  • Supplier Device Package: 35 micro-X
封装: 4-SMD (35 micro-X)
库存5,488
12V
8GHz
1.3dB ~ 3dB @ 1GHz ~ 4GHz
10dB ~ 18dB
500mW
30 @ 10mA, 8V
60mA
150°C (TJ)
Surface Mount
4-SMD (35 micro-X)
35 micro-X
MPSH17_D75Z
Fairchild/ON Semiconductor

TRANS NPN 15V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存2,240
15V
800MHz
6dB @ 200MHz
24dB
350mW
25 @ 5mA, 10V
-
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
NESG2046M33-T3-A
CEL

TRANS NPN 2GHZ M33

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 18GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.5dB @ 2GHz
  • Gain: 9.5dB ~ 11.5dB
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SuperMiniMold (M33)
封装: 3-SMD, Flat Leads
库存2,384
5V
18GHz
0.8dB ~ 1.5dB @ 2GHz
9.5dB ~ 11.5dB
130mW
140 @ 2mA, 1V
40mA
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-SuperMiniMold (M33)
hot NE97733-T1B-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存46,560
12V
8.5GHz
1.5dB @ 1GHz
12dB
200mW
20 @ 20mA, 8V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
UPA814T-T1-A
CEL

TRANSISTOR NPN FT=9GHZ SOT-36

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SO
封装: 6-TSSOP, SC-88, SOT-363
库存7,392
6V
9GHz
1.5dB @ 2GHz
-
200mW
80 @ 3mA, 1V
100mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-SO
BFG425W,135
NXP

TRANS RF NPN 25GHZ 4.5V SOT343R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
  • Gain: 20dB
  • Power - Max: 135mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
封装: SC-82A, SOT-343
库存3,584
4.5V
25GHz
0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
20dB
135mW
50 @ 25mA, 2V
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
0910-60M
Microsemi Corporation

TRAN RF BIPO 180W 1000MHZ 55AW

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 890MHz ~ 1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 8.5dB
  • Power - Max: 180W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
封装: 55AW
库存2,656
65V
890MHz ~ 1GHz
-
8dB ~ 8.5dB
180W
-
8A
200°C (TJ)
Chassis Mount
55AW
55AW
SD1536-08
Microsemi Corporation

TRANS RF BIPO 292W 10A M105

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.4dB
  • Power - Max: 292W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 10A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M105
  • Supplier Device Package: M105
封装: M105
库存3,792
65V
1.025GHz ~ 1.15GHz
-
8.4dB
292W
5 @ 100mA, 5V
10A
200°C (TJ)
Chassis Mount
M105
M105
MT3S20P(TE12L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1GHZ PW-MINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
  • Gain: 16.5dB
  • Power - Max: 1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
封装: TO-243AA
库存23,856
12V
7GHz
1.45dB @ 1GHz
16.5dB
1.8W
100 @ 50mA, 5V
80mA
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
BFU550AR
NXP

TRANS RF NPN 12V 50MA TO-236AB

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封装: TO-236-3, SC-59, SOT-23-3
库存340,728
12V
11GHz
0.6dB @ 900MHz
18dB
450mW
60 @ 15mA, 8V
50mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
CP681-MPSH81-CM
Central Semiconductor Corp

RF TRANS PNP 20V 600MHZ DIE

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
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20V
600MHz
-
-
-
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RTN7735PL
Infineon Technologies

RTN7735PL - RF TRANSMITTER

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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