页 5 - Vishay Siliconix 产品 - 晶体管 - FET,MOSFET - 阵列 | 深圳黑森尔电子
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Vishay Siliconix 产品 - 晶体管 - FET,MOSFET - 阵列

记录 749
页  5/25
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SIZF906BDT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 36A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
  • Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
封装: -
库存85,068
-
30V
36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
2.2V @ 250µA
49nC @ 10V, 165nC @ 10V
1630pF @ 15V, 5550pF @ 15V
4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
SIZ998DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 20A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
  • Power - Max: 20.2W, 32.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
封装: -
库存11,700
-
30V
20A (Tc), 60A (Tc)
6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
2.2V @ 250µA
8.1nC @ 4.5V, 19.8nC @ 4.5V
930pF @ 15V, 2620pF @ 15V
20.2W, 32.9W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
SQJQ906E-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 95A PPAK8X8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 8 x 8 Dual
  • Supplier Device Package: PowerPAK® 8 x 8 Dual
封装: -
库存5,166
-
40V
95A (Tc)
3.3mOhm @ 5A, 10V
3.5V @ 250µA
42nC @ 10V
3600pF @ 20V
50W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8 Dual
PowerPAK® 8 x 8 Dual
SI6562CDQ-T1-BE3
Vishay Siliconix

MOSFET N/P-CH 20V 5.7A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
  • Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: -
库存9,714
-
20V
5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
1.5V @ 250µA
23nC @ 10V, 51nC @ 10V
850pF @ 10V, 1200pF @ 10V
1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SQJ958EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 20A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 34.9mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 30V
  • Power - Max: 35W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存8,913
-
60V
20A (Tc)
34.9mOhm @ 4.5A, 10V
2.5V @ 250µA
23nC @ 10V
1075pF @ 30V
35W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SIZ240DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 40V 17.2A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V, 1070pF @ 20V
  • Power - Max: 4.3W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (3.3x3.3)
封装: -
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-
40V
17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)
8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V
2.4V @ 250µA
23nC @ 10V, 22nC @ 10V
1180pF @ 20V, 1070pF @ 20V
4.3W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (3.3x3.3)
SI5980DU-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 100V 2.5A CHIPFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 567mOhm @ 400mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 50V
  • Power - Max: 7.8W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® ChipFET™ Dual
  • Supplier Device Package: PowerPAK® ChipFet Dual
封装: -
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-
100V
2.5A
567mOhm @ 400mA, 10V
4V @ 250µA
3.3nC @ 10V
78pF @ 50V
7.8W
-
Surface Mount
PowerPAK® ChipFET™ Dual
PowerPAK® ChipFet Dual
SQ4946CEY-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 7A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V
  • Power - Max: 4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
库存32,814
-
60V
7A (Tc)
40mOhm @ 4.5A, 10V
2.5V @ 250µA
22nC @ 10V
865pF @ 25V
4W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI3911DV-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 1.8A 6TSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封装: -
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Logic Level Gate
20V
1.8A
145mOhm @ 2.2A, 4.5V
450mV @ 250µA (Min)
7.5nC @ 4.5V
-
830mW
-
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SI6562DQ-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 8-TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: -
Request a Quote
Logic Level Gate
20V
-
30mOhm @ 4.5A, 4.5V
600mV @ 250µA (Min)
25nC @ 4.5V
-
1W
-
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SIZF5300DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 35A PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V
  • Power - Max: 4.5W (Ta), 56.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerPair™
  • Supplier Device Package: PowerPAIR® 3x3FS
封装: -
库存16,227
-
30V
35A (Ta), 125A (Tc)
2.43mOhm @ 10A, 10V
2V @ 250µA
32nC @ 10V
1480pF @ 15V
4.5W (Ta), 56.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerPair™
PowerPAIR® 3x3FS
SI7844DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
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Logic Level Gate
30V
6.4A
22mOhm @ 10A, 10V
2.4V @ 250µA
20nC @ 10V
-
1.4W
-
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJ910AEP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存8,910
-
30V
30A (Tc)
7mOhm @ 12A, 10V
2.5V @ 250µA
39nC @ 10V
1869pF @ 15V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJ910AEP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
  • Power - Max: 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
Request a Quote
-
30V
30A (Tc)
7mOhm @ 12A, 10V
2.5V @ 250µA
39nC @ 10V
1869pF @ 15V
48W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJB80EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 80V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存8,820
-
80V
30A (Tc)
19mOhm @ 8A, 10V
2.5V @ 250µA
32nC @ 10V
1400pF @ 25V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQ4282EY-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2367pF @ 15V
  • Power - Max: 3.9W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
库存7,488
-
30V
8A (Tc)
12.3mOhm @ 15A, 10V
2.5V @ 250µA
47nC @ 10V
2367pF @ 15V
3.9W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQ4282EY-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2367pF @ 15V
  • Power - Max: 3.9W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
库存6,255
-
30V
8A (Tc)
12.3mOhm @ 15A, 10V
2.5V @ 250µA
47nC @ 10V
2367pF @ 15V
3.9W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI7223DN-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 6A PPAK 1212

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
  • Power - Max: 2.6W (Ta), 23W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
封装: -
库存24,579
-
30V
6A (Tc)
26.4mOhm @ 8A, 10V
2.5V @ 250µA
40nC @ 10V
1425pF @ 15V
2.6W (Ta), 23W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8 Dual
PowerPAK® 1212-8 Dual
SIA922EDJ-T4-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4.4A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.9W (Ta), 7.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SC-70-6 Dual
  • Supplier Device Package: PowerPAK® SC-70-6 Dual
封装: -
Request a Quote
-
30V
4.4A (Ta), 4.5A (Tc)
64mOhm @ 3A, 4.5V
1.4V @ 250µA
12nC @ 10V
-
1.9W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
SQJB04ELP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存70,419
-
40V
30A (Tc)
11mOhm @ 5A, 10V
2.2V @ 250µA
20nC @ 10V
1055pF @ 25V
27W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJ942EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 15A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 45A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V, 33.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 809pF @ 20V, 1451pF @ 20V
  • Power - Max: 17W, 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8
  • Supplier Device Package: PowerPAK® SO-8
封装: -
库存9,000
-
40V
15A (Tc), 45A (Tc)
22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V
2.3V @ 250µA
19.7nC @ 10V, 33.8nC @ 10V
809pF @ 20V, 1451pF @ 20V
17W, 48W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIA938DJT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
  • Power - Max: 1.9W (Ta), 7.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SC-70-6 Dual
  • Supplier Device Package: PowerPAK® SC-70-6 Dual
封装: -
库存35,379
-
20V
4.5A (Ta), 4.5A (Tc)
21.5mOhm @ 5A, 10V
1.5V @ 250µA
11.5nC @ 10V
425pF @ 10V
1.9W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
SQJ500AEP-T1_BE3
Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8
  • Supplier Device Package: PowerPAK® SO-8
封装: -
库存17,814
-
40V
30A (Tc)
9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V
2.3V @ 250µA, 2.5V @ 250µA
38.3nC @ 10V, 45nC @ 10V
1843pF @ 20V, 1628pF @ 20V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SQJ202EP-T2_GE3
Vishay Siliconix

MOSFET 2N-CH 12V 20A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
  • Power - Max: 27W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
封装: -
库存27,000
-
12V
20A (Tc), 60A (Tc)
6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
2V @ 250µA
22nC @ 10V, 54nC @ 10V
975pF @ 6V, 2525pF @ 6V
27W (Tc), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual Asymmetric
SI4511DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 7.2A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
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Logic Level Gate
20V
7.2A, 4.6A
14.5mOhm @ 9.6A, 10V
1.8V @ 250µA
18nC @ 4.5V
-
1.1W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQJ264EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 20A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V
  • Power - Max: 27W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
封装: -
库存17,100
-
60V
20A (Tc), 54A (Tc)
20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
3.5V @ 250µA
16nC @ 10V, 32nC @ 10V
1000pF @ 25V, 2100pF @ 25V
27W (Tc), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual Asymmetric
SQJ974EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 100V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存18,000
-
100V
30A (Tc)
25.5mOhm @ 10A, 10V
2.5V @ 250µA
30nC @ 10V
1050pF @ 25V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SI1900DL-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 0.63A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 630mA (Ta), 590mA (Ta)
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 300mW, 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
封装: -
库存9,000
-
30V
630mA (Ta), 590mA (Ta)
480mOhm @ 590mA, 10V
3V @ 250µA
1.4nC @ 10V
-
300mW, 270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SQJB68EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 100V 11A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • Power - Max: 27W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存51,204
-
100V
11A (Tc)
92mOhm @ 4A, 10V
2.5V @ 250µA
8nC @ 10V
280pF @ 25V
27W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQJB68EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 100V 11A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存53,844
-
100V
11A (Tc)
92mOhm @ 4A, 10V
2.5V @ 250µA
8nC @ 10V
280pF @ 25V
27W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual