页 25 - Vishay Siliconix 产品 - 晶体管 - FET,MOSFET - 阵列 | 深圳黑森尔电子
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Vishay Siliconix 产品 - 晶体管 - FET,MOSFET - 阵列

记录 749
页  25/25
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SIA936EDJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC-70

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
封装: PowerPAK? SC-70-6 Dual
库存7,024
Logic Level Gate
20V
4.5A
34 mOhm @ 4A, 4.5V
1.3V @ 250µA
17nC @ 10V
-
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
VQ3001P-E3
Vishay Siliconix

MOSFET 2N/2P-CH 30V 14DIP

  • FET Type: 2 N and 2 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 850mA, 600mA
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 1A, 12V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,352
Standard
30V
850mA, 600mA
1 Ohm @ 1A, 12V
2.5V @ 1mA
-
110pF @ 15V
2W
-55°C ~ 150°C (TJ)
-
-
-
hot VQ2001P-2
Vishay Siliconix

MOSFET 4P-CH 30V 0.6A 14DIP

  • FET Type: 4 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP
  • Supplier Device Package: 14-DIP
封装: 14-DIP
库存9,420
Standard
30V
600mA
2 Ohm @ 1A, 12V
4.5V @ 1mA
-
150pF @ 15V
2W
-55°C ~ 150°C (TJ)
Through Hole
14-DIP
14-DIP
hot VQ2001P
Vishay Siliconix

MOSFET 4P-CH 30V 0.6A 14DIP

  • FET Type: 4 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存144,000
Standard
30V
600mA
2 Ohm @ 1A, 12V
4.5V @ 1mA
-
150pF @ 15V
2W
-55°C ~ 150°C (TJ)
-
-
-
VQ1006P-E3
Vishay Siliconix

MOSFET 4N-CH 90V 0.4A 14DIP

  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 400mA
  • Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 14-DIP
封装: -
库存4,192
Logic Level Gate
90V
400mA
4.5 Ohm @ 1A, 10V
2.5V @ 1mA
-
60pF @ 25V
2W
-55°C ~ 150°C (TJ)
Through Hole
-
14-DIP
VQ1006P-2
Vishay Siliconix

MOSFET 4N-CH 90V 0.4A 14DIP

  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 400mA
  • Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 14-DIP
封装: -
库存7,616
Logic Level Gate
90V
400mA
4.5 Ohm @ 1A, 10V
2.5V @ 1mA
-
60pF @ 25V
2W
-55°C ~ 150°C (TJ)
Through Hole
-
14-DIP
hot VQ1006P
Vishay Siliconix

MOSFET 4N-CH 90V 0.4A 14DIP

  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 400mA
  • Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 14-DIP
封装: -
库存6,168
Logic Level Gate
90V
400mA
4.5 Ohm @ 1A, 10V
2.5V @ 1mA
-
60pF @ 25V
2W
-55°C ~ 150°C (TJ)
Through Hole
-
14-DIP
VQ1001P-E3
Vishay Siliconix

MOSFET 4N-CH 30V 0.83A 14DIP

  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 830mA
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 14-DIP
封装: -
库存2,672
Logic Level Gate
30V
830mA
1.75 Ohm @ 200mA, 5V
2.5V @ 1mA
-
110pF @ 15V
2W
-55°C ~ 150°C (TJ)
Through Hole
-
14-DIP
hot VQ1001P-2
Vishay Siliconix

MOSFET 4N-CH 30V 0.83A 14DIP

  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 830mA
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 14-DIP
封装: -
库存18,936
Logic Level Gate
30V
830mA
1.75 Ohm @ 200mA, 5V
2.5V @ 1mA
-
110pF @ 15V
2W
-55°C ~ 150°C (TJ)
Through Hole
-
14-DIP
hot VQ1001P
Vishay Siliconix

MOSFET 4N-CH 30V 0.83A 14DIP

  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 830mA
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 14-DIP
封装: -
库存17,436
Logic Level Gate
30V
830mA
1.75 Ohm @ 200mA, 5V
2.5V @ 1mA
-
110pF @ 15V
2W
-55°C ~ 150°C (TJ)
Through Hole
-
14-DIP
hot SQJ962EP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 8A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
  • Power - Max: 25W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封装: PowerPAK? SO-8 Dual
库存32,892
Logic Level Gate
60V
8A
60 mOhm @ 4.3A, 10V
2.5V @ 250µA
14nC @ 10V
475pF @ 25V
25W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI4942DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 40V 5.3A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存105,588
Logic Level Gate
40V
5.3A
21 mOhm @ 7.4A, 10V
3V @ 250µA
32nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI4920DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存596,532
Logic Level Gate
30V
-
25 mOhm @ 6.9A, 10V
1V @ 250µA (Min)
23nC @ 5V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI4816DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 5.3A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W, 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存147,948
Logic Level Gate
30V
5.3A, 7.7A
22 mOhm @ 6.3A, 10V
2V @ 250µA
12nC @ 5V
-
1W, 1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI4562DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存706,836
Logic Level Gate
20V
-
25 mOhm @ 7.1A, 4.5V
1.6V @ 250µA
50nC @ 4.5V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI4542DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存662,292
Logic Level Gate
30V
-
25 mOhm @ 6.9A, 10V
1V @ 250µA (Min)
50nC @ 10V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI9936BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 4.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存582,900
Logic Level Gate
30V
4.5A
35 mOhm @ 6A, 10V
3V @ 250µA
13nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI5906DU-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6A PPAK FET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
  • Power - Max: 10.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
封装: PowerPAK? ChipFET? Dual
库存72,000
Logic Level Gate
30V
6A
31 mOhm @ 4.8A, 10V
2.2V @ 250µA
8.6nC @ 10V
300pF @ 15V
10.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFET? Dual
PowerPAK? ChipFet Dual
SQJ941EP-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 8A PPAK SO-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
  • Power - Max: 55W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封装: PowerPAK? SO-8 Dual
库存7,296
Logic Level Gate
30V
8A
24 mOhm @ 9A, 10V
2.5V @ 250µA
55nC @ 10V
1800pF @ 10V
55W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SQ9945AEY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 3.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存1,401,312
Logic Level Gate
60V
3.7A
80 mOhm @ 3.7A, 10V
3V @ 250µA
20nC @ 10V
-
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SQ4946EY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 4.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存389,544
Logic Level Gate
60V
4.5A
55 mOhm @ 4.5A, 10V
3V @ 250µA
30nC @ 10V
-
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SMMB911DK-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 2.6A SC75-6L

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A
  • Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-75-6L Dual
  • Supplier Device Package: PowerPAK? SC-75-6L Dual
封装: PowerPAK? SC-75-6L Dual
库存7,168
Standard
20V
2.6A
295 mOhm @ 1.5A, 4.5V
1V @ 250µA
4nC @ 8V
115pF @ 10V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Dual
PowerPAK? SC-75-6L Dual
SMMA511DJ-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 12V 4.5A SC70-6L

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
  • Power - Max: 6.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
封装: PowerPAK? SC-70-6 Dual
库存7,712
Logic Level Gate
12V
4.5A
40 mOhm @ 4.2A, 4.5V
1V @ 250µA
12nC @ 8V
400pF @ 6V
6.5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot SIA911DJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
  • Power - Max: 6.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
封装: PowerPAK? SC-70-6 Dual
库存318,240
Standard
20V
4.5A
94 mOhm @ 2.8A, 4.5V
1V @ 250µA
12.8nC @ 8V
355pF @ 10V
6.5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
SI9936BDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存4,416
Logic Level Gate
30V
4.5A
35 mOhm @ 6A, 10V
3V @ 250µA
13nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI9926BDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 6.2A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.14W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,600
Logic Level Gate
20V
6.2A
20 mOhm @ 8.2A, 4.5V
1.5V @ 250µA
20nC @ 4.5V
-
1.14W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI7983DP-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 7.7A PPAK SO-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封装: PowerPAK? SO-8 Dual
库存2,416
Logic Level Gate
20V
7.7A
17 mOhm @ 12A, 4.5V
1V @ 600µA
74nC @ 4.5V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI7980DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 8A PPAK SO-8

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
  • Power - Max: 19.8W, 21.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封装: PowerPAK? SO-8 Dual
库存105,360
Standard
20V
8A
22 mOhm @ 5A, 10V
2.5V @ 250µA
27nC @ 10V
1010pF @ 10V
19.8W, 21.9W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI7964DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 6.1A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封装: PowerPAK? SO-8 Dual
库存8,964
Standard
60V
6.1A
23 mOhm @ 9.6A, 10V
4.5V @ 250µA
65nC @ 10V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual