页 2 - Vishay Siliconix 产品 - 晶体管 - FET，MOSFET - 阵列

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SIA915DJ-T4-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 3.7A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.5A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Power - Max: 1.9W (Ta), 6.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	封装: -	Request a Quote	-	30V	3.7A (Ta), 4.5A (Tc)	87mOhm @ 2.9A, 10V	2.2V @ 250µA	9nC @ 10V	275pF @ 15V	1.9W (Ta), 6.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
SQ1922EEH-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.84A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 840mA (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	封装: -	库存35,856	-	20V	840mA (Tc)	350mOhm @ 400mA, 4.5V	1.5V @ 250µA	1.2nC @ 4.5V	50pF @ 10V	1.5W	-55°C ~ 175°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SQ4917CEY-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 60V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V Power - Max: 5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	库存10,995	-	60V	8A (Tc)	48mOhm @ 4.3A, 10V	2.5V @ 250µA	65nC @ 10V	1910pF @ 30V	5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SIS590DN-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 100V 2.7A PPAK1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) Rds On (Max) @ Id, Vgs: 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 265pF 2 50V, 325pF @ 50V Power - Max: 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	封装: -	Request a Quote	-	100V	2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)	167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V	2.5V @ 250µA	-	265pF 2 50V, 325pF @ 50V	2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
SIZ980BDT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 23.7A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	封装: -	库存40,779	-	30V	23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)	4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V	2.2V @ 250µA	18nC @ 10V, 79nC @ 10V	790pF @ 15V, 3655pF @ 15V	3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
SQJ262EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 15A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc) Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	封装: -	库存53,820	-	60V	15A (Tc), 40A (Tc)	35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V	2.5V @ 250µA	10nC @ 10V, 23nC @ 10V	550pF @ 25V, 1260pF @ 25V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
SQ1922AEEH-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.85A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power - Max: 1.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	封装: -	库存69,702	-	20V	850mA (Tc)	300mOhm @ 400mA, 4.5V	2.5V @ 250µA	1.2nC @ 4.5V	60pF @ 10V	1.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SI4500BDY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 6.6A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	Logic Level Gate	20V	6.6A, 3.8A	20mOhm @ 9.1A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	-	1.3W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQ4940AEY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V Power - Max: 4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	库存37,578	-	40V	8A (Tc)	24mOhm @ 5.3A, 10V	2.5V @ 250µA	43nC @ 10V	741pF @ 20V	4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQUN702E-T1_GE3	Vishay Siliconix	MOSFET N/P-CH 40V/200V 30A DIE FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V, 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 20A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V Power - Max: 48W (Tc), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	-	40V, 200V	30A (Tc), 20A (Tc)	9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V	2.5V @ 250µA, 3.5V @ 250µA	23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V	1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V	48W (Tc), 60W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	Die	Die
SI1539CDL-T1-BE3	Vishay Siliconix	MOSFET N/P-CH 30V 0.7A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V Power - Max: 290mW (Ta), 340mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	封装: -	Request a Quote	-	30V	700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)	388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V	2.5V @ 250µA	1.5nC @ 10V, 3nC @ 10V	28pF @ 15V, 34pF @ 15V	290mW (Ta), 340mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SI6954ADQ-T1-BE3	Vishay Siliconix	MOSFET 2N-CH 30V 3.1A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: -	库存27,000	-	30V	3.1A (Ta)	53mOhm @ 3.4A, 10V	1V @ 250µA	16nC @ 10V	-	830mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4511DY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 7.2A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	Logic Level Gate	20V	7.2A, 4.6A	14.5mOhm @ 9.6A, 10V	1.8V @ 250µA	18nC @ 4.5V	-	1.1W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQJB46ELP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	库存2,190	-	40V	30A (Tc)	8mOhm @ 8A, 10V	2.2V @ 250µA	40nC @ 10V	2100pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SIZF360DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 23A 6POWERPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair™ Supplier Device Package: 6-PowerPair™	封装: -	Request a Quote	-	30V	23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)	4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V	2.2V @ 250µA	22nC @ 10V, 62nC @ 10V	1100pF @ 15V, 3150pF @ 15V	3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair™	6-PowerPair™
SISF00DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 60A PPAK 12 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V Power - Max: 69.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Dual Supplier Device Package: PowerPAK® 1212-8SCD Dual	封装: -	库存61,611	-	30V	60A (Tc)	5mOhm @ 10A, 10V	2.1V @ 250µA	53nC @ 10V	2700pF @ 15V	69.4W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SCD Dual	PowerPAK® 1212-8SCD Dual
SI1036X-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 0.61A SC89-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 610mA (Ta) Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V Power - Max: 220mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: -	库存28,047	-	30V	610mA (Ta)	540mOhm @ 500mA, 4.5V	1V @ 250µA	1.2nC @ 4.5V	36pF @ 15V	220mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SQJB46ELP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	库存9,000	-	40V	30A (Tc)	8mOhm @ 8A, 10V	2.2V @ 250µA	40nC @ 10V	2100pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJ560EP-T1_BE3	Vishay Siliconix	MOSFET N/P-CH 60V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	库存17,970	-	60V	30A (Tc), 18A (Tc)	12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V, 45nC @ 10V	1650pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJ560EP-T1_GE3	Vishay Siliconix	MOSFET N/P-CH 60V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	库存41,556	-	60V	30A (Tc), 18A (Tc)	12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V, 45nC @ 10V	1650pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SIS9446DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 11.3A/34A PPAK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V Power - Max: 2.6W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8	封装: -	Request a Quote	-	40V	11.3A (Ta), 34A (Tc)	12mOhm @ 10A, 10V	2.3V @ 250µA	16nC @ 10V	720pF @ 20V	2.6W (Ta), 23W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SIZF5302DT-T1-RE3	Vishay Siliconix	MOSFET 2N-CH 30V 28.1A PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Power - Max: 3.8W (Ta), 48.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerPair™ Supplier Device Package: PowerPAIR® 3x3FS	封装: -	库存15,843	-	30V	28.1A (Ta), 100A (Tc)	3.2mOhm @ 10A, 10V	2V @ 250µA	22.2nC @ 10V	1030pF @ 15V	3.8W (Ta), 48.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerPair™	PowerPAIR® 3x3FS
SIZ328DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	封装: -	库存8,550	-	25V	11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)	15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V	2.5V @ 250µA	6.9nC @ 10V, 11.3nC @ 10V	325pF @ 10V, 600pF @ 10V	2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SQ3985EV-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 20V 3.9A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Power - Max: 3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封装: -	库存12,420	-	20V	3.9A (Tc)	145mOhm @ 2.8A, 4.5V	1.5V @ 250µA	4.6nC @ 4.5V	350pF @ 10V	3W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SQ3985EV-T1_BE3	Vishay Siliconix	MOSFET 2P-CH 20V 3.9A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Power - Max: 3W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封装: -	Request a Quote	-	20V	3.9A (Tc)	145mOhm @ 2.8A, 4.5V	1.5V @ 250µA	4.6nC @ 10V	350pF @ 10V	3W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SQJ912BEP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	库存13,311	-	40V	30A (Tc)	11mOhm @ 9A, 10V	2V @ 250µA	60nC @ 10V	3000pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQ4284EY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power - Max: 3.9W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	库存14,481	-	40V	8A (Tc)	13.5mOhm @ 7A, 10V	2.5V @ 250µA	45nC @ 10V	2200pF @ 25V	3.9W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SIS9634LDN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6A PPAK 1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V Power - Max: 2.5W (Ta), 17.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	封装: -	库存35,490	-	60V	6A (Ta), 6A (Tc)	31mOhm @ 5A, 10V	3V @ 250µA	11nC @ 10V	420pF @ 30V	2.5W (Ta), 17.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
SI7911DN-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 4.2A 1212-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 51mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	封装: -	Request a Quote	Logic Level Gate	20V	4.2A	51mOhm @ 5.7A, 4.5V	1V @ 250µA	15nC @ 4.5V	-	1.3W	-	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
SQ4937EY-T1_BE3	Vishay Siliconix	MOSFET 2P-CH 30V 5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Power - Max: 3.3W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	库存3,000	-	30V	5A (Tc)	75mOhm @ 3.9A, 10V	2.5V @ 250µA	15nC @ 10V	480pF @ 25V	3.3W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

SIA915DJ-T4-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 3.7A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Power - Max: 1.9W (Ta), 6.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

封装: -

Request a Quote

-

30V

3.7A (Ta), 4.5A (Tc)

87mOhm @ 2.9A, 10V

2.2V @ 250µA

9nC @ 10V

275pF @ 15V

1.9W (Ta), 6.5W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

SQ1922EEH-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 20V 0.84A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

封装: -

库存35,856

-

20V

840mA (Tc)

350mOhm @ 400mA, 4.5V

1.5V @ 250µA

1.2nC @ 4.5V

50pF @ 10V

1.5W

-55°C ~ 175°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SQ4917CEY-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 60V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Power - Max: 5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

库存10,995

-

60V

8A (Tc)

48mOhm @ 4.3A, 10V

2.5V @ 250µA

65nC @ 10V

1910pF @ 30V

5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SIS590DN-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 100V 2.7A PPAK1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 265pF 2 50V, 325pF @ 50V
Power - Max: 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

封装: -

Request a Quote

-

100V

2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)

167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V

2.5V @ 250µA

-

265pF 2 50V, 325pF @ 50V

2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8 Dual

SIZ980BDT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 23.7A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

封装: -

库存40,779

-

30V

23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)

4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V

2.2V @ 250µA

18nC @ 10V, 79nC @ 10V

790pF @ 15V, 3655pF @ 15V

3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

SQJ262EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 15A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

封装: -

库存53,820

-

60V

15A (Tc), 40A (Tc)

35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V

2.5V @ 250µA

10nC @ 10V, 23nC @ 10V

550pF @ 25V, 1260pF @ 25V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

SQ1922AEEH-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 20V 0.85A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Power - Max: 1.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

封装: -

库存69,702

-

20V

850mA (Tc)

300mOhm @ 400mA, 4.5V

2.5V @ 250µA

1.2nC @ 4.5V

60pF @ 10V

1.5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SI4500BDY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 6.6A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

Logic Level Gate

20V

6.6A, 3.8A

20mOhm @ 9.1A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

-

1.3W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQ4940AEY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Power - Max: 4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

库存37,578

-

40V

8A (Tc)

24mOhm @ 5.3A, 10V

2.5V @ 250µA

43nC @ 10V

741pF @ 20V

4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQUN702E-T1_GE3

Vishay Siliconix

MOSFET N/P-CH 40V/200V 30A DIE

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V, 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
Power - Max: 48W (Tc), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: Die
Supplier Device Package: Die

封装: -

Request a Quote

-

40V, 200V

30A (Tc), 20A (Tc)

9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V

2.5V @ 250µA, 3.5V @ 250µA

23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V

1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V

48W (Tc), 60W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

Die

SI1539CDL-T1-BE3

Vishay Siliconix

MOSFET N/P-CH 30V 0.7A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V
Power - Max: 290mW (Ta), 340mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

封装: -

Request a Quote

-

30V

700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)

388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V

2.5V @ 250µA

1.5nC @ 10V, 3nC @ 10V

28pF @ 15V, 34pF @ 15V

290mW (Ta), 340mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SI6954ADQ-T1-BE3

Vishay Siliconix

MOSFET 2N-CH 30V 3.1A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: -

库存27,000

-

30V

3.1A (Ta)

53mOhm @ 3.4A, 10V

1V @ 250µA

16nC @ 10V

-

830mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4511DY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 7.2A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

Logic Level Gate

20V

7.2A, 4.6A

14.5mOhm @ 9.6A, 10V

1.8V @ 250µA

18nC @ 4.5V

-

1.1W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQJB46ELP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

库存2,190

-

40V

30A (Tc)

8mOhm @ 8A, 10V

2.2V @ 250µA

40nC @ 10V

2100pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SIZF360DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 23A 6POWERPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™

封装: -

Request a Quote

-

30V

23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)

4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V

2.2V @ 250µA

22nC @ 10V, 62nC @ 10V

1100pF @ 15V, 3150pF @ 15V

3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair™

SISF00DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 60A PPAK 12

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Power - Max: 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD Dual
Supplier Device Package: PowerPAK® 1212-8SCD Dual

封装: -

库存61,611

-

30V

60A (Tc)

5mOhm @ 10A, 10V

2.1V @ 250µA

53nC @ 10V

2700pF @ 15V

69.4W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8SCD Dual

SI1036X-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 0.61A SC89-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
Power - Max: 220mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: -

库存28,047

-

30V

610mA (Ta)

540mOhm @ 500mA, 4.5V

1V @ 250µA

1.2nC @ 4.5V

36pF @ 15V

220mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

SQJB46ELP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

库存9,000

-

40V

30A (Tc)

8mOhm @ 8A, 10V

2.2V @ 250µA

40nC @ 10V

2100pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJ560EP-T1_BE3

Vishay Siliconix

MOSFET N/P-CH 60V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

库存17,970

-

60V

30A (Tc), 18A (Tc)

12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V, 45nC @ 10V

1650pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJ560EP-T1_GE3

Vishay Siliconix

MOSFET N/P-CH 60V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

库存41,556

-

60V

30A (Tc), 18A (Tc)

12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V, 45nC @ 10V

1650pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SIS9446DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 11.3A/34A PPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Power - Max: 2.6W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8

封装: -

Request a Quote

-

40V

11.3A (Ta), 34A (Tc)

12mOhm @ 10A, 10V

2.3V @ 250µA

16nC @ 10V

720pF @ 20V

2.6W (Ta), 23W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8

SIZF5302DT-T1-RE3

Vishay Siliconix

MOSFET 2N-CH 30V 28.1A PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
Power - Max: 3.8W (Ta), 48.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerPair™
Supplier Device Package: PowerPAIR® 3x3FS

封装: -

库存15,843

-

30V

28.1A (Ta), 100A (Tc)

3.2mOhm @ 10A, 10V

2V @ 250µA

22.2nC @ 10V

1030pF @ 15V

3.8W (Ta), 48.1W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerPair™

PowerPAIR® 3x3FS

SIZ328DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V 8PWR33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

封装: -

库存8,550

-

25V

11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)

15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V

2.5V @ 250µA

6.9nC @ 10V, 11.3nC @ 10V

325pF @ 10V, 600pF @ 10V

2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

SQ3985EV-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 20V 3.9A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Power - Max: 3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封装: -

库存12,420

-

20V

3.9A (Tc)

145mOhm @ 2.8A, 4.5V

1.5V @ 250µA

4.6nC @ 4.5V

350pF @ 10V

3W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SQ3985EV-T1_BE3

Vishay Siliconix

MOSFET 2P-CH 20V 3.9A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Power - Max: 3W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封装: -

Request a Quote

-

20V

3.9A (Tc)

145mOhm @ 2.8A, 4.5V

1.5V @ 250µA

4.6nC @ 10V

350pF @ 10V

3W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SQJ912BEP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

库存13,311

-

40V

30A (Tc)

11mOhm @ 9A, 10V

2V @ 250µA

60nC @ 10V

3000pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQ4284EY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Power - Max: 3.9W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

库存14,481

-

40V

8A (Tc)

13.5mOhm @ 7A, 10V

2.5V @ 250µA

45nC @ 10V

2200pF @ 25V

3.9W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SIS9634LDN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 6A PPAK 1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Power - Max: 2.5W (Ta), 17.9W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

封装: -

库存35,490

-

60V

6A (Ta), 6A (Tc)

31mOhm @ 5A, 10V

3V @ 250µA

11nC @ 10V

420pF @ 30V

2.5W (Ta), 17.9W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8 Dual

SI7911DN-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 4.2A 1212-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 51mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

封装: -

Request a Quote

Logic Level Gate

20V

4.2A

51mOhm @ 5.7A, 4.5V

1V @ 250µA

15nC @ 4.5V

-

1.3W

-

Surface Mount

PowerPAK® 1212-8 Dual

SQ4937EY-T1_BE3

Vishay Siliconix

MOSFET 2P-CH 30V 5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Power - Max: 3.3W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

库存3,000

-

30V

5A (Tc)

75mOhm @ 3.9A, 10V

2.5V @ 250µA

15nC @ 10V

480pF @ 25V

3.3W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC