Vishay Siliconix 产品 - 晶体管 - FET,MOSFET - 阵列 | 深圳黑森尔电子
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Vishay Siliconix 产品 - 晶体管 - FET,MOSFET - 阵列

记录 749
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零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SIZF906ADT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 27A 8POWERPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
  • Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
封装: -
Request a Quote
-
30V
27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
2.2V @ 250µA
49nC @ 10V, 200nC @ 10V
2000pF @ 15V, 8200pF @ 15V
4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
SQJB44EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存8,622
-
40V
30A (Tc)
5.2mOhm @ 8A, 10V
2.2V @ 250µA
50nC @ 10V
3075pF @ 25V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SIZF928DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 33A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
封装: -
库存18,192
-
30V
33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
2.45mOhm @ 10A, 10V, 750µOhm @ 15A, 10V
2V @ 250µA
-
-
3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
SI1902DL-T1-BE3
Vishay Siliconix

MOSFET 2N-CH 20V 0.66A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
  • Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 270mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
封装: -
库存8,892
-
20V
660mA (Ta)
385mOhm @ 660mA, 4.5V
1.5V @ 250µA
1.2nC @ 4.5V
-
270mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SQJQ910EL-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 100V 70A PPAK8X8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
  • Power - Max: 187W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 8 x 8 Dual
  • Supplier Device Package: PowerPAK® 8 x 8 Dual
封装: -
库存5,970
-
100V
70A (Tc)
8.6mOhm @ 10A, 10V
2.5V @ 250µA
58nC @ 10V
2832pF @ 50V
187W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8 Dual
PowerPAK® 8 x 8 Dual
SIZF300DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 23A 8POWERPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
  • Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
封装: -
库存8,478
-
30V
23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
2.2V @ 250µA
22nC @ 10V, 62nC @ 10V
1100pF @ 15V, 3150pF @ 15V
3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
SQ4937EY-T1_GE3
Vishay Siliconix

MOSFET 2P-CH 30V 5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
  • Power - Max: 3.3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
库存1,005
-
30V
5A (Tc)
75mOhm @ 3.9A, 10V
2.5V @ 250µA
15nC @ 10V
480pF @ 25V
3.3W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQJQ980EL-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 80V 36A PPAK8X8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V
  • Power - Max: 187W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 8 x 8 Dual
  • Supplier Device Package: PowerPAK® 8 x 8 Dual
封装: -
库存12,000
-
80V
36A (Tc)
13.5mOhm @ 5A, 10V
2.5V @ 250µA
36nC @ 10V
1995pF @ 40V
187W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8 Dual
PowerPAK® 8 x 8 Dual
SI6562DQ-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 8-TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: -
Request a Quote
Logic Level Gate
20V
-
30mOhm @ 4.5A, 4.5V
600mV @ 250µA (Min)
25nC @ 4.5V
-
1W
-
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SQS966ENW-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 6A PWRPAK1212

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
  • Power - Max: 27.8W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: PowerPAK® 1212-8W Dual
  • Supplier Device Package: PowerPAK® 1212-8W Dual
封装: -
库存26,310
-
60V
6A (Tc)
36mOhm @ 1.25A, 10V
2.5V @ 250µA
8.8nC @ 10V
572pF @ 25V
27.8W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerPAK® 1212-8W Dual
PowerPAK® 1212-8W Dual
SIZ350DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 18.5A 8PWR33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
  • Power - Max: 3.7W (Ta), 16.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
封装: -
库存22,497
-
30V
18.5A (Ta), 30A (Tc)
6.75mOhm @ 15A, 10V
2.4V @ 250µA
20.3nC @ 10V
940pF @ 15V
3.7W (Ta), 16.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
SQJ912AEP-T2_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
Request a Quote
-
40V
30A (Tc)
9.3mOhm @ 9.7A, 10V
2.5V @ 250µA
38nC @ 10V
1835pF @ 20V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SIZ340BDT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 16.9A 8PWR33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
  • Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
封装: -
库存18,267
-
30V
16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
2.4V @ 250µA
12.6nC @ 10V, 23.5nC @ 10V
550pF @ 15V, 1065pF @ 15V
3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
SISF04DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 30A PPAK 1212-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
  • Power - Max: 5.2W (Ta), 69.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8SCD
  • Supplier Device Package: PowerPAK® 1212-8SCD
封装: -
库存18,000
-
30V
30A (Ta), 108A (Tc)
4mOhm @ 7A, 10V
2.3V @ 250µA
60nC @ 10V
2600pF @ 15V
5.2W (Ta), 69.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SCD
PowerPAK® 1212-8SCD
SQJ912AEP-T2_BE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
Request a Quote
-
40V
30A (Tc)
9.3mOhm @ 9.7A, 10V
2.5V @ 250µA
38nC @ 10V
1835pF @ 20V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SI7501DN-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V 5.4A 1212-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
封装: -
Request a Quote
Logic Level Gate
30V
5.4A, 4.5A
35mOhm @ 7.7A, 10V
3V @ 250µA
14nC @ 10V
-
1.6W
-
Surface Mount
PowerPAK® 1212-8 Dual
PowerPAK® 1212-8 Dual
SQJ570EP-T1_BE3
Vishay Siliconix

MOSFET N/P-CH 100V 15A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V, 650pF @ 25V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存9,000
-
100V
15A (Tc), 9.5A (Tc)
45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
2.5V @ 250µA
15nC @ 10V, 20nC @ 10V
600pF @ 25V, 650pF @ 25V
27W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SI1553CDL-T1-BE3
Vishay Siliconix

MOSFET N/P-CH 20V 0.7A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
  • Power - Max: 290mW (Ta), 340mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
封装: -
Request a Quote
-
20V
700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
1.5V @ 250µA
1.8nC @ 10V, 3nC @ 10V
38pF @ 10V, 43pF @ 10V
290mW (Ta), 340mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SQJQ936EL-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 100A PPAK8X8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
  • Power - Max: 75W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 8 x 8 Dual
  • Supplier Device Package: PowerPAK® 8 x 8 Dual
封装: -
Request a Quote
-
40V
100A (Tc)
2.3mOhm @ 5A, 10V
2.5V @ 250µA
45nC @ 10V
7300pF @ 25V
75W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8 Dual
PowerPAK® 8 x 8 Dual
SQJB60EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 60V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
封装: -
库存4,290
-
60V
30A (Tc)
12mOhm @ 10A, 10V
2.5V @ 250µA
30nC @ 10V
1600pF @ 25V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual Asymmetric
SIZ342ADT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 15.7A 8PWR33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
  • Power - Max: 3.7W (Ta), 16.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
封装: -
库存36,255
-
30V
15.7A (Ta), 33.4A (Tc)
9.4mOhm @ 10A, 10V
2.4V @ 250µA
12.2nC @ 10V
580pF @ 15V
3.7W (Ta), 16.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
SQJB02ELP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
  • Power - Max: 27W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存25,422
-
40V
30A (Tc)
7.5mOhm @ 6A, 10V
2.2V @ 250µA
32nC @ 10V
1700pF @ 20V
27W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQ3989EV-T1_BE3
Vishay Siliconix

MOSFET 2P-CH 30V 2.5A 6TSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.67W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封装: -
库存27,000
-
30V
2.5A (Tc)
155mOhm @ 400mA, 10V
1.5V @ 250µA
11.1nC @ 10V
-
1.67W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SI1922EDH-T1-BE3
Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 1.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 740mW (Ta), 1.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
封装: -
Request a Quote
-
20V
1.3A (Ta), 1.3A (Tc)
198mOhm @ 1A, 4.5V
1V @ 250µA
2.5nC @ 8V
-
740mW (Ta), 1.25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SIZF4800LDT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 80V 10A PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
  • Power - Max: 4.5W (Ta), 56.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerPair™
  • Supplier Device Package: PowerPAIR® 3x3FS
封装: -
库存17,940
-
80V
10A (Ta), 36A (Tc)
19mOhm @ 10A, 10V
2V @ 250µA
23nC @ 10V
950pF @ 40V
4.5W (Ta), 56.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerPair™
PowerPAIR® 3x3FS
SQJ992EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 60V 15A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存9,000
-
60V
15A (Tc)
56.2mOhm @ 3.7A, 10V
2.5V @ 250µA
12nC @ 10V
446pF @ 30V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SI4953ADY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 3.7A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
Request a Quote
Logic Level Gate
30V
3.7A
53mOhm @ 4.9A, 10V
1V @ 250µA (Min)
25nC @ 10V
-
1.1W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SIZ988DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 40A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
  • Power - Max: 20.2W, 40W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair®
封装: -
库存30,669
-
30V
40A (Tc), 60A (Tc)
7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
2.4V @ 250µA, 2.2V @ 250µA
10.5nC @ 4.5V, 23.1nC @ 4.5V
1000pF @ 15V, 2425pF @ 15V
20.2W, 40W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair®
SQJ244EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 20A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V
  • Power - Max: 27W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
封装: -
库存3
-
40V
20A (Tc), 60A (Tc)
11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V
2.5V @ 250µA
20nC @ 10V, 45nC @ 10V
1200pF @ 25V, 2800pF @ 25V
27W (Tc), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual Asymmetric
SI6913DQ-T1-BE3
Vishay Siliconix

MOSFET 2P-CH 12V 4.9A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: -
库存27,000
-
12V
4.9A (Ta)
21mOhm @ 5.8A, 4.5V
900mV @ 400µA
28nC @ 4.5V
-
830mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP