页 7 - Microchip Technology 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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Microchip Technology 产品 - 晶体管 - FET，MOSFET - 单

记录 441
页  7/15
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APT6025SVRG
Microchip Technology

MOSFET N-CH 600V 25A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
25A (Tc)
-
4V @ 1mA
275 nC @ 10 V
5160 pF @ 25 V
-
-
-
250mOhm @ 500mA, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC035SMA070B4
Microchip Technology

TRANS SJT N-CH 700V 77A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 283W (Tc)
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
封装: -
Request a Quote
SiCFET (Silicon Carbide)
700 V
77A (Tc)
20V
2.7V @ 2mA (Typ)
99 nC @ 20 V
2010 pF @ 700 V
+23V, -10V
-
283W (Tc)
44mOhm @ 30A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
MSC080SMA120B
Microchip Technology

SICFET N-CH 1200V 37A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
37A (Tc)
20V
2.8V @ 1mA
64 nC @ 20 V
838 pF @ 1000 V
+23V, -10V
-
200W (Tc)
100mOhm @ 15A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
MSC080SMA120J
Microchip Technology

SICFET N-CH 1.2KV 35A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
封装: -
库存75
SiCFET (Silicon Carbide)
1200 V
37A (Tc)
-
-
-
-
-
-
-
-
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
MSC080SMA120S
Microchip Technology

SICFET N-CH 1200V 35A D3PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 35A
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 182W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
库存105
SiCFET (Silicon Carbide)
1200 V
35A
20V
2.8V @ 1mA
64 nC @ 20 V
838 pF @ 1000 V
+23V, -10V
-
182W (Tc)
100mOhm @ 15A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT50M75JLL
Microchip Technology

MOSFET N-CH 500V 51A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
51A (Tc)
-
5V @ 2.5mA
125 nC @ 10 V
5590 pF @ 25 V
-
-
-
75mOhm @ 25.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT50M50JVFR
Microchip Technology

MOSFET N-CH 500V 77A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1000 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
库存24
MOSFET (Metal Oxide)
500 V
77A (Tc)
-
4V @ 5mA
1000 nC @ 10 V
19600 pF @ 25 V
-
-
-
50mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT6021BLLG
Microchip Technology

MOSFET N-CH 600V 29A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
29A (Tc)
-
5V @ 1mA
80 nC @ 10 V
3470 pF @ 25 V
-
-
-
210mOhm @ 14.5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT12060LVFRG
Microchip Technology

MOSFET N-CH 1200V 20A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 10A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
20A (Tc)
-
4V @ 1mA
650 nC @ 10 V
9500 pF @ 25 V
-
-
-
600mOhm @ 10A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT5010JFLL
Microchip Technology

MOSFET N-CH 500V 41A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
41A (Tc)
-
5V @ 2.5mA
95 nC @ 10 V
4360 pF @ 25 V
-
-
-
100mOhm @ 20.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5010JVR
Microchip Technology

MOSFET N-CH 500V 44A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
44A (Tc)
-
4V @ 2.5mA
470 nC @ 10 V
8900 pF @ 25 V
-
-
-
100mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5010JLL
Microchip Technology

MOSFET N-CH 500V 41A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
41A (Tc)
-
5V @ 2.5mA
95 nC @ 10 V
4360 pF @ 25 V
-
-
-
100mOhm @ 20.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5010JVFR
Microchip Technology

MOSFET N-CH 500V 44A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
库存63
MOSFET (Metal Oxide)
500 V
44A (Tc)
-
4V @ 2.5mA
470 nC @ 10 V
8900 pF @ 25 V
-
-
-
100mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
MSC360SMA120SA
Microchip Technology

MOSFET SIC 1200 V 360 MOHM TO-26

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.14V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
11A (Tc)
20V
3.14V @ 250µA
21 nC @ 20 V
255 pF @ 1000 V
+23V, -10V
-
71W (Tc)
450mOhm @ 5A, 20V
-55°C ~ 175°C (TJ)
-
-
-
APT1204R7SFLLG
Microchip Technology

MOSFET N-CH 1200V 3.5A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
3.5A (Tc)
-
5V @ 1mA
31 nC @ 10 V
715 pF @ 25 V
-
-
-
4.7Ohm @ 1.75A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT10025JVFR
Microchip Technology

MOSFET N-CH 1000V 34A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 990 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
34A (Tc)
-
4V @ 5mA
990 nC @ 10 V
18000 pF @ 25 V
-
-
-
250mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT8065BVFRG
Microchip Technology

MOSFET N-CH 800V 13A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
800 V
13A (Tc)
-
4V @ 1mA
225 nC @ 10 V
3700 pF @ 25 V
-
-
-
650mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT8014L2FLLG
Microchip Technology

MOSFET N-CH 800V 52A 264 MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: 264 MAX™ [L2]
  • Package / Case: TO-264-3, TO-264AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
800 V
52A (Tc)
-
5V @ 5mA
285 nC @ 10 V
7238 pF @ 25 V
-
-
-
160mOhm @ 26A, 10V
-
Through Hole
264 MAX™ [L2]
TO-264-3, TO-264AA
APT9M100S-TR
Microchip Technology

MOSFET MOS8 1000 V 9 A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 335W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
库存987
MOSFET (Metal Oxide)
1000 V
9A (Tc)
10V
5V @ 1mA
80 nC @ 10 V
2605 pF @ 25 V
±30V
-
335W (Tc)
1.4Ohm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT1201R6BVFRG
Microchip Technology

MOSFET N-CH 1200V 8A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
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MOSFET (Metal Oxide)
1200 V
8A (Tc)
-
4V @ 1mA
230 nC @ 10 V
3660 pF @ 25 V
-
-
-
1.6Ohm @ 4A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT6010JFLL
Microchip Technology

MOSFET N-CH 600V 47A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
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MOSFET (Metal Oxide)
600 V
47A (Tc)
-
5V @ 2.5mA
150 nC @ 10 V
6710 pF @ 25 V
-
-
-
100mOhm @ 23.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5010LVRG
Microchip Technology

MOSFET N-CH 500V 47A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
封装: -
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MOSFET (Metal Oxide)
500 V
47A (Tc)
-
4V @ 2.5mA
470 nC @ 10 V
8900 pF @ 25 V
-
-
-
100mOhm @ 500mA, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT1003RSFLLG-TR
Microchip Technology

MOSFET N-CH 1KV 4A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
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MOSFET (Metal Oxide)
1000 V
4A (Tc)
10V
5V @ 1mA
34 nC @ 10 V
694 pF @ 25 V
±30V
-
139W (Tc)
3Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT5018SFLLG-TR
Microchip Technology

MOSFET N-CH 500V 27A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
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MOSFET (Metal Oxide)
500 V
27A (Tc)
10V
5V @ 1mA
58 nC @ 10 V
2596 pF @ 25 V
±30V
-
300W (Tc)
180mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT5020SVFRG
Microchip Technology

MOSFET N-CH 500V 26A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
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MOSFET (Metal Oxide)
500 V
26A (Tc)
-
4V @ 1mA
225 nC @ 10 V
4440 pF @ 25 V
-
-
-
200mOhm @ 500mA, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT50M50JVR
Microchip Technology

MOSFET N-CH 500V 77A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1000 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
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MOSFET (Metal Oxide)
500 V
77A (Tc)
-
4V @ 5mA
1000 nC @ 10 V
19600 pF @ 25 V
-
-
-
50mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
MSC025SMA120B4
Microchip Technology

TRANS SJT N-CH 1200V 103A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
封装: -
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SiCFET (Silicon Carbide)
1200 V
103A (Tc)
20V
2.8V @ 3mA
232 nC @ 20 V
3020 pF @ 1000 V
+23V, -10V
-
500W (Tc)
31mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
APT5020SVFRG-TR
Microchip Technology

MOSFET N-CH 500V 26A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
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MOSFET (Metal Oxide)
500 V
26A (Tc)
10V
4V @ 1mA
225 nC @ 10 V
4440 pF @ 25 V
±30V
-
300W (Tc)
200mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC080SMA330B4
Microchip Technology

MOSFET SIC 3300 V 80 MOHM TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 3300 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.97V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3462 pF @ 2400 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 381W (Tc)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 30A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
封装: -
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SiCFET (Silicon Carbide)
3300 V
41A (Tc)
20V
2.97V @ 3mA
55 nC @ 20 V
3462 pF @ 2400 V
+23V, -10V
-
381W (Tc)
105mOhm @ 30A, 20V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
APT10026L2FLLG
Microchip Technology

MOSFET N-CH 1000V 38A 264 MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 19A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: 264 MAX™ [L2]
  • Package / Case: TO-264-3, TO-264AA
封装: -
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MOSFET (Metal Oxide)
1000 V
38A (Tc)
-
5V @ 5mA
267 nC @ 10 V
7114 pF @ 25 V
-
-
-
260mOhm @ 19A, 10V
-
Through Hole
264 MAX™ [L2]
TO-264-3, TO-264AA