页 9 - Microchip Technology 产品 - 晶体管 - FET，MOSFET - 单

LND01K1-G

Microchip Technology

MOSFET N-CH 9V 330MA SOT23-5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 9V
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 5V
Vgs (Max): +0.6V, -12V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 100mA, 0V
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-5
Package / Case: SC-74A, SOT-753

封装: SC-74A, SOT-753

库存72,000

MOSFET (Metal Oxide)

9V

330mA (Tj)

0V

-

46pF @ 5V

+0.6V, -12V

Depletion Mode

360mW (Ta)

1.4 Ohm @ 100mA, 0V

-25°C ~ 125°C (TJ)

Surface Mount

SOT-23-5

SC-74A, SOT-753

VN2210N2

Microchip Technology

MOSFET N-CH 100V 1.7A TO39-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360mW (Tc)
Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can

封装: TO-205AD, TO-39-3 Metal Can

库存5,456

MOSFET (Metal Oxide)

100V

1.7A (Tj)

5V, 10V

2.4V @ 10mA

-

500pF @ 25V

±20V

-

360mW (Tc)

350 mOhm @ 4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-39

TO-205AD, TO-39-3 Metal Can

2N6660

Microchip Technology

MOSFET N-CH 60V 0.41A TO39-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can

封装: TO-205AD, TO-39-3 Metal Can

库存9,852

MOSFET (Metal Oxide)

60V

410mA (Ta)

5V, 10V

2V @ 1mA

-

50pF @ 24V

±20V

-

6.25W (Tc)

3 Ohm @ 1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-39

TO-205AD, TO-39-3 Metal Can

2N6661

Microchip Technology

MOSFET N-CH 90V 350MA 3TO-39

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can

封装: TO-205AD, TO-39-3 Metal Can

库存16,020

MOSFET (Metal Oxide)

90V

350mA (Tj)

5V, 10V

2V @ 1mA

-

50pF @ 24V

±20V

-

6.25W (Tc)

4 Ohm @ 1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-39

TO-205AD, TO-39-3 Metal Can

TP2540N8-G

Microchip Technology

MOSFET P-CH 400V 0.125A SOT89-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 125mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-243AA (SOT-89)
Package / Case: TO-243AA

封装: TO-243AA

库存45,636

MOSFET (Metal Oxide)

400V

125mA (Tj)

4.5V, 10V

2.4V @ 1mA

-

125pF @ 25V

±20V

-

1.6W (Ta)

25 Ohm @ 100mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA (SOT-89)

TO-243AA

TN2540N8-G

Microchip Technology

MOSFET N-CH 400V 260MA SOT89-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-243AA (SOT-89)
Package / Case: TO-243AA

封装: TO-243AA

库存403,272

MOSFET (Metal Oxide)

400V

260mA (Tj)

4.5V, 10V

2V @ 1mA

-

125pF @ 25V

±20V

-

1.6W (Ta)

12 Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA (SOT-89)

TO-243AA

DN2625K4-G

Microchip Technology

MOSFET N-CH 250V 1.1A 3DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存45,660

MOSFET (Metal Oxide)

250V

1.1A (Tj)

0V

-

7.04nC @ 1.5V

1000pF @ 25V

±20V

Depletion Mode

-

3.5 Ohm @ 1A, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252, (D-Pak)

TO-252-3, DPak (2 Leads + Tab), SC-63

TN2524N8-G

Microchip Technology

MOSFET N-CH 240V 360MA SOT89-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 240V
Current - Continuous Drain (Id) @ 25°C: 360mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-243AA (SOT-89)
Package / Case: TO-243AA

封装: TO-243AA

库存450,204

MOSFET (Metal Oxide)

240V

360mA (Tj)

4.5V, 10V

2V @ 1mA

-

125pF @ 25V

±20V

-

1.6W (Tc)

6 Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA (SOT-89)

TO-243AA

DN2540N8-G

Microchip Technology

MOSFET N-CH 400V 0.17A SOT89-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 170mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-243AA (SOT-89)
Package / Case: TO-243AA

封装: TO-243AA

库存46,128

MOSFET (Metal Oxide)

400V

170mA (Tj)

0V

-

300pF @ 25V

±20V

Depletion Mode

1.6W (Tc)

25 Ohm @ 120mA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA (SOT-89)

TO-243AA

DN3545N8-G

Microchip Technology

MOSFET N-CH 450V 0.2A SOT89-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-243AA (SOT-89)
Package / Case: TO-243AA

封装: TO-243AA

库存14,700

MOSFET (Metal Oxide)

450V

200mA (Tj)

0V

-

360pF @ 25V

±20V

Depletion Mode

1.6W (Ta)

20 Ohm @ 150mA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA (SOT-89)

TO-243AA

DN3525N8-G

Microchip Technology

MOSFET N-CH 250V 360MA SOT89-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 360mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-243AA (SOT-89)
Package / Case: TO-243AA

封装: TO-243AA

库存15,240

MOSFET (Metal Oxide)

250V

360mA (Tj)

0V

-

350pF @ 25V

±20V

Depletion Mode

1.6W (Ta)

6 Ohm @ 200mA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA (SOT-89)

TO-243AA

LND150N8-G

Microchip Technology

MOSFET N-CH 500V 30MA SOT89-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89-3
Package / Case: TO-243AA

封装: TO-243AA

库存81,594

MOSFET (Metal Oxide)

500V

30mA (Tj)

0V

-

10pF @ 25V

±20V

Depletion Mode

1.6W (Ta)

1000 Ohm @ 500µA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-89-3

TO-243AA

MIC94052YC6-TR

Microchip Technology

MOSFET P-CH 6V 2A SC70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 6V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): 6V
FET Feature: -
Power Dissipation (Max): 270mW (Ta)
Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存134,706

MOSFET (Metal Oxide)

6V

2A (Ta)

1.8V, 4.5V

1.2V @ 250µA

-

6V

-

270mW (Ta)

84 mOhm @ 100mA, 4.5V

-40°C ~ 150°C (TJ)

Surface Mount

SC-70-6

6-TSSOP, SC-88, SOT-363

LND150K1-G

Microchip Technology

MOSFET N-CH 500V 0.013A SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存44,910

MOSFET (Metal Oxide)

500V

13mA (Tj)

0V

-

10pF @ 25V

±20V

Depletion Mode

360mW (Ta)

1000 Ohm @ 500µA, 0V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

TO-236-3, SC-59, SOT-23-3

APT1201R5BVRG

Microchip Technology

MOSFET N-CH 1200V 10A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封装: -

Request a Quote

MOSFET (Metal Oxide)

1200 V

10A (Tc)

10V

4V @ 1mA

28 nC @ 10 V

4440 pF @ 25 V

-

1.5Ohm @ 5A, 10V

-

Through Hole

TO-247-3

APT10050JVFR

Microchip Technology

MOSFET N-CH 1000V 19A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

Request a Quote

MOSFET (Metal Oxide)

1000 V

19A (Tc)

-

4V @ 2.5mA

500 nC @ 10 V

7900 pF @ 25 V

-

500mOhm @ 500mA, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT5010LVFRG

Microchip Technology

MOSFET N-CH 500V 47A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

封装: -

Request a Quote

MOSFET (Metal Oxide)

500 V

47A (Tc)

-

4V @ 2.5mA

470 nC @ 10 V

8900 pF @ 25 V

-

100mOhm @ 500mA, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

APT8020LLLG

Microchip Technology

MOSFET N-CH 800V 38A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 200mOhm @ 19A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

封装: -

Request a Quote

MOSFET (Metal Oxide)

800 V

38A (Tc)

-

5V @ 2.5mA

195 nC @ 10 V

5200 pF @ 25 V

-

200mOhm @ 19A, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

APT10026JLL

Microchip Technology

MOSFET N-CH 1000V 30A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 260mOhm @ 15A, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

Request a Quote

MOSFET (Metal Oxide)

1000 V

30A (Tc)

-

5V @ 5mA

267 nC @ 10 V

7114 pF @ 25 V

-

260mOhm @ 15A, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT10M19SVFRG

Microchip Technology

MOSFET N-CH 100V 75A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 19mOhm @ 37.5A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

Request a Quote

MOSFET (Metal Oxide)

100 V

75A (Tc)

-

4V @ 1mA

300 nC @ 10 V

6120 pF @ 25 V

-

19mOhm @ 37.5A, 10V

-

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

APT10025JVR

Microchip Technology

MOSFET N-CH 1000V 34A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 990 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

库存27

MOSFET (Metal Oxide)

1000 V

34A (Tc)

-

4V @ 5mA

990 nC @ 10 V

18000 pF @ 25 V

-

250mOhm @ 500mA, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT6025BVRG

Microchip Technology

MOSFET N-CH 600V 25A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封装: -

库存99

MOSFET (Metal Oxide)

600 V

25A (Tc)

-

4V @ 1mA

275 nC @ 10 V

5160 pF @ 25 V

-

250mOhm @ 500mA, 10V

-

Through Hole

TO-247 [B]

TO-247-3

APT6029SLLG

Microchip Technology

MOSFET N-CH 600V 21A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

Request a Quote

MOSFET (Metal Oxide)

600 V

21A (Tc)

-

5V @ 1mA

65 nC @ 10 V

2615 pF @ 25 V

-

290mOhm @ 10.5A, 10V

-

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

APT6025BLLG

Microchip Technology

MOSFET N-CH 600V 24A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封装: -

Request a Quote

MOSFET (Metal Oxide)

600 V

24A (Tc)

-

5V @ 1mA

65 nC @ 10 V

2910 pF @ 25 V

-

250mOhm @ 12A, 10V

-

Through Hole

TO-247 [B]

TO-247-3

APT10050LVRG

Microchip Technology

MOSFET N-CH 1000V 21A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

封装: -

Request a Quote

MOSFET (Metal Oxide)

1000 V

21A (Tc)

-

4V @ 2.5mA

500 nC @ 10 V

7900 pF @ 25 V

-

500mOhm @ 500mA, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

APT9M100S

Microchip Technology

MOSFET N-CH 1000V 9A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 335W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

库存258

MOSFET (Metal Oxide)

1000 V

9A (Tc)

10V

5V @ 1mA

80 nC @ 10 V

2605 pF @ 25 V

±30V

-

335W (Tc)

1.4Ohm @ 5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

MRH25N12U3

Microchip Technology

RH MOSFET _ U3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U3 (SMD-0.5)
Package / Case: 3-SMD, No Lead

封装: -

Request a Quote

MOSFET (Metal Oxide)

250 V

12.4A (Tc)

12V

4V @ 1mA

50 nC @ 12 V

1980 pF @ 25 V

±20V

-

75W (Tc)

210mOhm @ 7.5A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

U3 (SMD-0.5)

3-SMD, No Lead

APT20M16LFLLG

Microchip Technology

MOSFET N-CH 200V 100A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

封装: -

库存75

MOSFET (Metal Oxide)

200 V

100A (Tc)

-

5V @ 2.5mA

140 nC @ 10 V

7220 pF @ 25 V

-

16mOhm @ 50A, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

APT12080JVFR

Microchip Technology

MOSFET N-CH 1200V 15A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 800mOhm @ 7.5A, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

Request a Quote

MOSFET (Metal Oxide)

1200 V

15A (Tc)

-

4V @ 2.5mA

485 nC @ 10 V

7800 pF @ 25 V

-

800mOhm @ 7.5A, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

MRH20N45T1SR

Microchip Technology

RH MOSFET 200V TO-254AA

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
LND01K1-G	Microchip Technology	MOSFET N-CH 9V 330MA SOT23-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 9V Current - Continuous Drain (Id) @ 25°C: 330mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 5V Vgs (Max): +0.6V, -12V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 100mA, 0V Operating Temperature: -25°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-5 Package / Case: SC-74A, SOT-753	封装: SC-74A, SOT-753	库存72,000	MOSFET (Metal Oxide)	9V	330mA (Tj)	0V	-	-	46pF @ 5V	+0.6V, -12V	Depletion Mode	360mW (Ta)	1.4 Ohm @ 100mA, 0V	-25°C ~ 125°C (TJ)	Surface Mount	SOT-23-5	SC-74A, SOT-753
VN2210N2	Microchip Technology	MOSFET N-CH 100V 1.7A TO39-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	封装: TO-205AD, TO-39-3 Metal Can	库存5,456	MOSFET (Metal Oxide)	100V	1.7A (Tj)	5V, 10V	2.4V @ 10mA	-	500pF @ 25V	±20V	-	360mW (Tc)	350 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6660	Microchip Technology	MOSFET N-CH 60V 0.41A TO39-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	封装: TO-205AD, TO-39-3 Metal Can	库存9,852	MOSFET (Metal Oxide)	60V	410mA (Ta)	5V, 10V	2V @ 1mA	-	50pF @ 24V	±20V	-	6.25W (Tc)	3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6661	Microchip Technology	MOSFET N-CH 90V 350MA 3TO-39 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	封装: TO-205AD, TO-39-3 Metal Can	库存16,020	MOSFET (Metal Oxide)	90V	350mA (Tj)	5V, 10V	2V @ 1mA	-	50pF @ 24V	±20V	-	6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
TP2540N8-G	Microchip Technology	MOSFET P-CH 400V 0.125A SOT89-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 125mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	封装: TO-243AA	库存45,636	MOSFET (Metal Oxide)	400V	125mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	125pF @ 25V	±20V	-	1.6W (Ta)	25 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
TN2540N8-G	Microchip Technology	MOSFET N-CH 400V 260MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 260mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	封装: TO-243AA	库存403,272	MOSFET (Metal Oxide)	400V	260mA (Tj)	4.5V, 10V	2V @ 1mA	-	125pF @ 25V	±20V	-	1.6W (Ta)	12 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
DN2625K4-G	Microchip Technology	MOSFET N-CH 250V 1.1A 3DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存45,660	MOSFET (Metal Oxide)	250V	1.1A (Tj)	0V	-	7.04nC @ 1.5V	1000pF @ 25V	±20V	Depletion Mode	-	3.5 Ohm @ 1A, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
TN2524N8-G	Microchip Technology	MOSFET N-CH 240V 360MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 360mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	封装: TO-243AA	库存450,204	MOSFET (Metal Oxide)	240V	360mA (Tj)	4.5V, 10V	2V @ 1mA	-	125pF @ 25V	±20V	-	1.6W (Tc)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
DN2540N8-G	Microchip Technology	MOSFET N-CH 400V 0.17A SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	封装: TO-243AA	库存46,128	MOSFET (Metal Oxide)	400V	170mA (Tj)	0V	-	-	300pF @ 25V	±20V	Depletion Mode	1.6W (Tc)	25 Ohm @ 120mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
DN3545N8-G	Microchip Technology	MOSFET N-CH 450V 0.2A SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	封装: TO-243AA	库存14,700	MOSFET (Metal Oxide)	450V	200mA (Tj)	0V	-	-	360pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	20 Ohm @ 150mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
DN3525N8-G	Microchip Technology	MOSFET N-CH 250V 360MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 360mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	封装: TO-243AA	库存15,240	MOSFET (Metal Oxide)	250V	360mA (Tj)	0V	-	-	350pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	6 Ohm @ 200mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
LND150N8-G	Microchip Technology	MOSFET N-CH 500V 30MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	封装: TO-243AA	库存81,594	MOSFET (Metal Oxide)	500V	30mA (Tj)	0V	-	-	10pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	1000 Ohm @ 500µA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-89-3	TO-243AA
MIC94052YC6-TR	Microchip Technology	MOSFET P-CH 6V 2A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): 6V FET Feature: - Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存134,706	MOSFET (Metal Oxide)	6V	2A (Ta)	1.8V, 4.5V	1.2V @ 250µA	-	-	6V	-	270mW (Ta)	84 mOhm @ 100mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
LND150K1-G	Microchip Technology	MOSFET N-CH 500V 0.013A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存44,910	MOSFET (Metal Oxide)	500V	13mA (Tj)	0V	-	-	10pF @ 25V	±20V	Depletion Mode	360mW (Ta)	1000 Ohm @ 500µA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
APT1201R5BVRG	Microchip Technology	MOSFET N-CH 1200V 10A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	10A (Tc)	10V	4V @ 1mA	28 nC @ 10 V	4440 pF @ 25 V	-	-	-	1.5Ohm @ 5A, 10V	-	Through Hole	TO-247-3	TO-247-3
APT10050JVFR	Microchip Technology	MOSFET N-CH 1000V 19A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	19A (Tc)	-	4V @ 2.5mA	500 nC @ 10 V	7900 pF @ 25 V	-	-	-	500mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT5010LVFRG	Microchip Technology	MOSFET N-CH 500V 47A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	500 V	47A (Tc)	-	4V @ 2.5mA	470 nC @ 10 V	8900 pF @ 25 V	-	-	-	100mOhm @ 500mA, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT8020LLLG	Microchip Technology	MOSFET N-CH 800V 38A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 200mOhm @ 19A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	800 V	38A (Tc)	-	5V @ 2.5mA	195 nC @ 10 V	5200 pF @ 25 V	-	-	-	200mOhm @ 19A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT10026JLL	Microchip Technology	MOSFET N-CH 1000V 30A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 260mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	30A (Tc)	-	5V @ 5mA	267 nC @ 10 V	7114 pF @ 25 V	-	-	-	260mOhm @ 15A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT10M19SVFRG	Microchip Technology	MOSFET N-CH 100V 75A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 19mOhm @ 37.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	75A (Tc)	-	4V @ 1mA	300 nC @ 10 V	6120 pF @ 25 V	-	-	-	19mOhm @ 37.5A, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT10025JVR	Microchip Technology	MOSFET N-CH 1000V 34A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 990 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	库存27	MOSFET (Metal Oxide)	1000 V	34A (Tc)	-	4V @ 5mA	990 nC @ 10 V	18000 pF @ 25 V	-	-	-	250mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT6025BVRG	Microchip Technology	MOSFET N-CH 600V 25A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封装: -	库存99	MOSFET (Metal Oxide)	600 V	25A (Tc)	-	4V @ 1mA	275 nC @ 10 V	5160 pF @ 25 V	-	-	-	250mOhm @ 500mA, 10V	-	Through Hole	TO-247 [B]	TO-247-3
APT6029SLLG	Microchip Technology	MOSFET N-CH 600V 21A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	21A (Tc)	-	5V @ 1mA	65 nC @ 10 V	2615 pF @ 25 V	-	-	-	290mOhm @ 10.5A, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT6025BLLG	Microchip Technology	MOSFET N-CH 600V 24A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	24A (Tc)	-	5V @ 1mA	65 nC @ 10 V	2910 pF @ 25 V	-	-	-	250mOhm @ 12A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
APT10050LVRG	Microchip Technology	MOSFET N-CH 1000V 21A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	21A (Tc)	-	4V @ 2.5mA	500 nC @ 10 V	7900 pF @ 25 V	-	-	-	500mOhm @ 500mA, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT9M100S	Microchip Technology	MOSFET N-CH 1000V 9A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 335W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	库存258	MOSFET (Metal Oxide)	1000 V	9A (Tc)	10V	5V @ 1mA	80 nC @ 10 V	2605 pF @ 25 V	±30V	-	335W (Tc)	1.4Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MRH25N12U3	Microchip Technology	RH MOSFET _ U3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U3 (SMD-0.5) Package / Case: 3-SMD, No Lead	封装: -	Request a Quote	MOSFET (Metal Oxide)	250 V	12.4A (Tc)	12V	4V @ 1mA	50 nC @ 12 V	1980 pF @ 25 V	±20V	-	75W (Tc)	210mOhm @ 7.5A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	U3 (SMD-0.5)	3-SMD, No Lead
APT20M16LFLLG	Microchip Technology	MOSFET N-CH 200V 100A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	封装: -	库存75	MOSFET (Metal Oxide)	200 V	100A (Tc)	-	5V @ 2.5mA	140 nC @ 10 V	7220 pF @ 25 V	-	-	-	16mOhm @ 50A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT12080JVFR	Microchip Technology	MOSFET N-CH 1200V 15A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 485 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 800mOhm @ 7.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	15A (Tc)	-	4V @ 2.5mA	485 nC @ 10 V	7800 pF @ 25 V	-	-	-	800mOhm @ 7.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
MRH20N45T1SR	Microchip Technology	RH MOSFET 200V TO-254AA FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-