页 6 - Microchip Technology 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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Microchip Technology 产品 - 晶体管 - FET，MOSFET - 单

记录 441
页  6/15
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数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MSC017SMA120B4
Microchip Technology

MOSFET SIC 1200V 17 MOHM TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 455W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
封装: -
库存105
SiCFET (Silicon Carbide)
1200 V
113A (Tc)
20V
2.7V @ 4.5mA (Typ)
249 nC @ 20 V
5280 pF @ 1000 V
+22V, -10V
-
455W (Tc)
22mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
APT6010LLLG
Microchip Technology

MOSFET N-CH 600V 54A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
54A (Tc)
-
5V @ 2.5mA
150 nC @ 10 V
6710 pF @ 25 V
-
-
-
100mOhm @ 27A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT20M45SVFRG
Microchip Technology

MOSFET N-CH 200V 56A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
200 V
56A (Tc)
-
4V @ 1mA
195 nC @ 10 V
4860 pF @ 25 V
-
-
-
45mOhm @ 500mA, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT1001RBVRG
Microchip Technology

MOSFET N-CH 1000V 11A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
库存147
MOSFET (Metal Oxide)
1000 V
11A (Tc)
-
4V @ 1mA
225 nC @ 10 V
3660 pF @ 25 V
-
-
-
1Ohm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT30M36JFLL
Microchip Technology

MOSFET N-CH 300V 76A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6480 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
300 V
76A (Tc)
-
5V @ 2.5mA
115 nC @ 10 V
6480 pF @ 25 V
-
-
-
36mOhm @ 38A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
MRH10N22U3SR
Microchip Technology

RH MOSFET 100V U3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4.48V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 19A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U3 (SMD-0.5)
  • Package / Case: 3-SMD, No Lead
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
22A (Tc)
12V
4.48V @ 1mA
34 nC @ 12 V
2165 pF @ 25 V
±20V
-
75W (Tc)
38mOhm @ 19A, 12V
-55°C ~ 150°C (TJ)
Surface Mount
U3 (SMD-0.5)
3-SMD, No Lead
APT6017JFLL
Microchip Technology

MOSFET N-CH 600V 31A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 15.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
31A (Tc)
-
5V @ 2.5mA
100 nC @ 10 V
4500 pF @ 25 V
-
-
-
170mOhm @ 15.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT30M30JLL
Microchip Technology

MOSFET N-CH 300V 88A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7030 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
300 V
88A (Tc)
-
5V @ 2.5mA
140 nC @ 10 V
7030 pF @ 25 V
-
-
-
30mOhm @ 44A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT8043BFLLG
Microchip Technology

MOSFET N-CH 800V 20A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
800 V
20A (Tc)
-
5V @ 1mA
85 nC @ 10 V
2500 pF @ 25 V
-
-
-
430mOhm @ 10A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
MSC090SMA070SA
Microchip Technology

MOSFET SIC 700 V 90 MOHM TO-263-

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 700 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 91W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 15A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封装: -
Request a Quote
SiCFET (Silicon Carbide)
700 V
25A (Tc)
20V
2.4V @ 750µA
38 nC @ 20 V
785 pF @ 700 V
+23V, -10V
-
91W (Tc)
115mOhm @ 15A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
APT20M20LFLLG
Microchip Technology

MOSFET N-CH 200V 100A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
200 V
100A (Tc)
-
5V @ 2.5mA
110 nC @ 10 V
6850 pF @ 25 V
-
-
-
20mOhm @ 50A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT5015BVRG
Microchip Technology

MOSFET N-CH 500V 32A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
32A (Tc)
-
4V @ 1mA
300 nC @ 10 V
5280 pF @ 25 V
-
-
-
150mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT30M36LLLG
Microchip Technology

MOSFET N-CH 300V 84A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6480 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 42A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
300 V
84A (Tc)
-
5V @ 2.5mA
115 nC @ 10 V
6480 pF @ 25 V
-
-
-
36mOhm @ 42A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
MSC70SM120JCU3
Microchip Technology

SICFET N-CH 1.2KV 89A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 395W (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
89A (Tc)
20V
2.8V @ 1mA
232 nC @ 20 V
3020 pF @ 1000 V
+25V, -10V
-
395W (Tc)
31mOhm @ 40A, 20V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
MSC70SM120JCU2
Microchip Technology

SICFET N-CH 1.2KV 89A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 395W (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
89A (Tc)
20V
2.8V @ 1mA
232 nC @ 20 V
3020 pF @ 1000 V
+25V, -10V
-
395W (Tc)
31mOhm @ 40A, 20V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
APT5015SVFRG
Microchip Technology

MOSFET N-CH 500V 32A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
32A (Tc)
10V
4V @ 1mA
300 nC @ 10 V
5280 pF @ 25 V
±30V
-
370W (Tc)
150mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC090SMA070B
Microchip Technology

SICFET N-CH 700V TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: -
库存36
SiCFET (Silicon Carbide)
700 V
-
-
-
-
-
-
-
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
MSC090SMA070S
Microchip Technology

SICFET N-CH 700V D3PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
库存309
SiCFET (Silicon Carbide)
700 V
25A (Tc)
-
-
-
-
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT5018SLLG-TR
Microchip Technology

MOSFET N-CH 500V 27A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
27A (Tc)
10V
5V @ 1mA
58 nC @ 10 V
2596 pF @ 25 V
±30V
-
300W (Tc)
180mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT6010B2FLLG
Microchip Technology

MOSFET N-CH 600V 54A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
封装: -
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MOSFET (Metal Oxide)
600 V
54A (Tc)
-
5V @ 2.5mA
150 nC @ 10 V
6710 pF @ 25 V
-
-
-
100mOhm @ 27A, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT5024SLLG-TR
Microchip Technology

MOSFET N-CH 500V 22A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 265W (Tc)
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
22A (Tc)
10V
5V @ 1mA
43 nC @ 10 V
1900 pF @ 25 V
±30V
-
265W (Tc)
240mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT6021BFLLG
Microchip Technology

MOSFET N-CH 600V 29A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
29A (Tc)
-
5V @ 1mA
80 nC @ 10 V
3470 pF @ 25 V
-
-
-
210mOhm @ 14.5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
MSC080SMA120B4
Microchip Technology

SICFET N-CH 1200V 37A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
封装: -
库存312
SiCFET (Silicon Carbide)
1200 V
37A (Tc)
20V
2.8V @ 1mA
64 nC @ 20 V
838 pF @ 1000 V
+23V, -10V
-
200W (Tc)
100mOhm @ 15A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
MSC080SMA120SA
Microchip Technology

MOSFET SIC 1200 V 80 MOHM TO-263

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 182W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封装: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
35A (Tc)
20V
2.8V @ 1mA
64 nC @ 20 V
838 pF @ 1000 V
+23V, -10V
-
182W (Tc)
100mOhm @ 15A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
APT50M75B2FLLG
Microchip Technology

MOSFET N-CH 500V 57A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
57A (Tc)
-
5V @ 2.5mA
125 nC @ 10 V
5590 pF @ 25 V
-
-
-
75mOhm @ 28.5A, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT50M85JVFR
Microchip Technology

MOSFET N-CH 500V 50A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 535 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
50A (Tc)
-
4V @ 1mA
535 nC @ 10 V
10800 pF @ 25 V
-
-
-
85mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT1003RSFLLG
Microchip Technology

MOSFET N-CH 1000V 4A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
4A (Tc)
-
5V @ 1mA
34 nC @ 10 V
694 pF @ 25 V
-
-
-
3Ohm @ 2A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT14M120S
Microchip Technology

MOSFET N-CH 1200V 14A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
库存150
MOSFET (Metal Oxide)
1200 V
14A (Tc)
10V
5V @ 1mA
145 nC @ 10 V
4765 pF @ 25 V
±30V
-
625W (Tc)
1.1Ohm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT40M70LVRG
Microchip Technology

MOSFET N-CH 400V 57A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 495 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8890 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 28.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (L)
  • Package / Case: TO-264-3, TO-264AA
封装: -
库存42
MOSFET (Metal Oxide)
400 V
57A (Tc)
10V
4V @ 2.5mA
495 nC @ 10 V
8890 pF @ 25 V
±30V
-
520W (Tc)
70mOhm @ 28.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (L)
TO-264-3, TO-264AA
APT1201R2BFLLG
Microchip Technology

MOSFET N-CH 1200V 12A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.25Ohm @ 6A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
库存327
MOSFET (Metal Oxide)
1200 V
12A (Tc)
-
5V @ 1mA
100 nC @ 10 V
2540 pF @ 25 V
-
-
-
1.25Ohm @ 6A, 10V
-
Through Hole
TO-247 [B]
TO-247-3