页 4 - Microchip Technology 产品 - 晶体管 - FET，MOSFET - 单

MSC017SMA120J

Microchip Technology

MOSFET SIC 1200V 17 MOHM SOT-227

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
Vgs (Max): +23V, -10V
FET Feature: -
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: -
Supplier Device Package: SOT-227
Package / Case: -

封装: -

库存30

SiCFET (Silicon Carbide)

1200 V

88A (Tc)

20V

2.7V @ 4.5mA (Typ)

249 nC @ 20 V

5280 pF @ 1000 V

+23V, -10V

-

278W (Tc)

22mOhm @ 40A, 20V

-55°C ~ 175°C (TJ)

-

SOT-227

-

APT10M07JVFR

Microchip Technology

MOSFET N-CH 100V 225A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 1050 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 7mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

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MOSFET (Metal Oxide)

100 V

225A (Tc)

-

4V @ 5mA

1050 nC @ 10 V

21600 pF @ 25 V

-

7mOhm @ 500mA, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT50M50L2LLG

Microchip Technology

MOSFET N-CH 500V 89A 264 MAX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 50mOhm @ 44.5A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: 264 MAX™ [L2]
Package / Case: TO-264-3, TO-264AA

封装: -

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MOSFET (Metal Oxide)

500 V

89A (Tc)

-

5V @ 5mA

200 nC @ 10 V

10550 pF @ 25 V

-

50mOhm @ 44.5A, 10V

-

Through Hole

264 MAX™ [L2]

TO-264-3, TO-264AA

APT8014L2LLG

Microchip Technology

MOSFET N-CH 800V 52A 264 MAX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: 264 MAX™ [L2]
Package / Case: TO-264-3, TO-264AA

封装: -

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MOSFET (Metal Oxide)

800 V

52A (Tc)

-

5V @ 5mA

285 nC @ 10 V

7238 pF @ 25 V

-

140mOhm @ 26A, 10V

-

Through Hole

264 MAX™ [L2]

TO-264-3, TO-264AA

APT10M11JVFR

Microchip Technology

MOSFET N-CH 100V 144A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 11mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

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MOSFET (Metal Oxide)

100 V

144A (Tc)

-

4V @ 2.5mA

450 nC @ 10 V

10380 pF @ 25 V

-

11mOhm @ 500mA, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

MSC180SMA120SA

Microchip Technology

MOSFET SIC 1200 V 180 MOHM TO-26

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 3.26V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V
Vgs (Max): +23V, -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, DPak (7 Leads + Tab)

封装: -

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SiCFET (Silicon Carbide)

1200 V

21A (Tc)

20V

3.26V @ 500µA

34 nC @ 20 V

510 pF @ 1000 V

+23V, -10V

-

125W (Tc)

225mOhm @ 8A, 20V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK-7

TO-263-8, DPak (7 Leads + Tab)

MSC180SMA120S

Microchip Technology

MOSFET SIC 1200 V 180 MOHM TO-26

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 3.26V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V
Vgs (Max): +23V, -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

库存543

SiCFET (Silicon Carbide)

1200 V

21A (Tc)

20V

3.26V @ 500µA

34 nC @ 20 V

510 pF @ 1000 V

+23V, -10V

-

125W (Tc)

225mOhm @ 8A, 20V

-55°C ~ 175°C (TJ)

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

MSC180SMA120B

Microchip Technology

MOSFET 1200V 25A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 1000 V
Vgs (Max): +23V, -10V
FET Feature: -
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封装: -

库存3

MOSFET (Metal Oxide)

1200 V

21A (Tc)

5V, 20V

4.5V @ 500µA

36 nC @ 20 V

530 pF @ 1000 V

+23V, -10V

-

147W (Tc)

225mOhm @ 8A, 20V

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

APT8015JVFR

Microchip Technology

MOSFET N-CH 800V 44A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17650 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

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MOSFET (Metal Oxide)

800 V

44A (Tc)

-

4V @ 5mA

285 nC @ 10 V

17650 pF @ 25 V

-

150mOhm @ 500mA, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT34M60S

Microchip Technology

MOSFET N-CH 600V 36A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 624W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

库存138

MOSFET (Metal Oxide)

600 V

36A (Tc)

10V

5V @ 1mA

165 nC @ 10 V

6640 pF @ 25 V

±30V

-

624W (Tc)

190mOhm @ 17A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

APT20M18B2VFRG

Microchip Technology

MOSFET N-CH 200V 100A T-MAX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant

封装: -

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MOSFET (Metal Oxide)

200 V

100A (Tc)

-

4V @ 2.5mA

330 nC @ 10 V

9880 pF @ 25 V

-

18mOhm @ 50A, 10V

-

Through Hole

T-MAX™ [B2]

TO-247-3 Variant

APT10M11LVRG

Microchip Technology

MOSFET N-CH 100V 100A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (L)
Package / Case: TO-264-3, TO-264AA

封装: -

库存72

MOSFET (Metal Oxide)

100 V

100A (Tc)

10V

4V @ 2.5mA

450 nC @ 10 V

10300 pF @ 25 V

±30V

-

520W (Tc)

11mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264 (L)

TO-264-3, TO-264AA

MSC100SM70JCU3

Microchip Technology

SICFET N-CH 700V 124A SOT227

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 365W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227 (ISOTOP®)
Package / Case: SOT-227-4, miniBLOC

封装: -

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SiCFET (Silicon Carbide)

700 V

124A (Tc)

20V

2.4V @ 4mA

215 nC @ 20 V

4500 pF @ 700 V

+25V, -10V

-

365W (Tc)

19mOhm @ 40A, 20V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227 (ISOTOP®)

SOT-227-4, miniBLOC

MSC100SM70JCU2

Microchip Technology

SICFET N-CH 700V 124A SOT227

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 365W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227 (ISOTOP®)
Package / Case: SOT-227-4, miniBLOC

封装: -

库存33

SiCFET (Silicon Carbide)

700 V

124A (Tc)

20V

2.4V @ 4mA

215 nC @ 20 V

4500 pF @ 700 V

+25V, -10V

-

365W (Tc)

19mOhm @ 40A, 20V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227 (ISOTOP®)

SOT-227-4, miniBLOC

APT12067LFLLG

Microchip Technology

MOSFET N-CH 1200V 18A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

封装: -

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MOSFET (Metal Oxide)

1200 V

18A (Tc)

-

5V @ 2.5mA

150 nC @ 10 V

4420 pF @ 25 V

-

670mOhm @ 9A, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

APT20M18LVFRG

Microchip Technology

MOSFET N-CH 200V 100A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

封装: -

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MOSFET (Metal Oxide)

200 V

100A (Tc)

-

4V @ 2.5mA

330 nC @ 10 V

9880 pF @ 25 V

-

18mOhm @ 50A, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

APT6013JFLL

Microchip Technology

MOSFET N-CH 600V 39A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

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MOSFET (Metal Oxide)

600 V

39A (Tc)

-

5V @ 2.5mA

130 nC @ 10 V

5630 pF @ 25 V

-

130mOhm @ 19.5A, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT10026L2LLG

Microchip Technology

MOSFET N-CH 1000V 38A 264 MAX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 260mOhm @ 19A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: 264 MAX™ [L2]
Package / Case: TO-264-3, TO-264AA

封装: -

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MOSFET (Metal Oxide)

1000 V

38A (Tc)

-

5V @ 5mA

267 nC @ 10 V

7114 pF @ 25 V

-

260mOhm @ 19A, 10V

-

Through Hole

264 MAX™ [L2]

TO-264-3, TO-264AA

APT20M34SLLG-TR

Microchip Technology

MOSFET N-CH 200V 74A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

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MOSFET (Metal Oxide)

200 V

74A (Tc)

10V

5V @ 1mA

60 nC @ 10 V

3660 pF @ 25 V

±30V

-

403W (Tc)

34mOhm @ 37A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

APT10045JFLL

Microchip Technology

MOSFET N-CH 1000V 21A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封装: -

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MOSFET (Metal Oxide)

1000 V

21A (Tc)

-

5V @ 2.5mA

154 nC @ 10 V

4350 pF @ 25 V

-

460mOhm @ 11.5A, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT6029BFLLG

Microchip Technology

MOSFET N-CH 600V 21A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

600 V

21A (Tc)

-

5V @ 1mA

65 nC @ 10 V

2615 pF @ 25 V

-

300W (Tc)

290mOhm @ 10.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 [B]

TO-247-3

MSC025SMA120S

Microchip Technology

SICFET N-CH 1.2KV 100A D3PAK

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

库存396

SiCFET (Silicon Carbide)

1200 V

89A (Tc)

-

-55°C ~ 175°C (TJ)

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

MSC025SMA120B

Microchip Technology

SICFET N-CH 1.2KV 103A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封装: -

库存432

SiCFET (Silicon Carbide)

1200 V

103A (Tc)

20V

2.8V @ 1mA

232 nC @ 20 V

3020 pF @ 1000 V

+25V, -10V

-

500W (Tc)

31mOhm @ 40A, 20V

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

MSC025SMA120J

Microchip Technology

SICFET N-CH 1.2KV 77A SOT227

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227 (ISOTOP®)
Package / Case: SOT-227-4, miniBLOC

封装: -

Request a Quote

SiCFET (Silicon Carbide)

1200 V

77A (Tc)

20V

2.8V @ 1mA

232 nC @ 20 V

3020 pF @ 1000 V

+25V, -10V

-

278W (Tc)

31mOhm @ 40A, 20V

-55°C ~ 175°C (TJ)

Chassis Mount

SOT-227 (ISOTOP®)

SOT-227-4, miniBLOC

APT1201R4BLLG

Microchip Technology

MOSFET N-CH 1200V 9A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封装: -

Request a Quote

MOSFET (Metal Oxide)

1200 V

9A (Tc)

10V

5V @ 1mA

120 nC @ 10 V

2500 pF @ 25 V

±30V

-

300W (Tc)

1.4Ohm @ 4.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TP5335MF-G-VAO

Microchip Technology

MOSFET, P-CHANNEL ENHANCEMENT-MO

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350 V
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-DFN (2x2)
Package / Case: 6-VDFN Exposed Pad

封装: -

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MOSFET (Metal Oxide)

350 V

85mA (Tj)

4.5V, 10V

2.4V @ 1mA

-

110 pF @ 25 V

±20V

-

360mW (Ta)

30Ohm @ 200mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

6-DFN (2x2)

6-VDFN Exposed Pad

TN2130K1-G-VAO

Microchip Technology

MOSFET N-CH 300V 85MA SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

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MOSFET (Metal Oxide)

300 V

85mA (Tj)

4.5V

2.4V @ 1mA

-

50 pF @ 25 V

±20V

-

360mW (Ta)

25Ohm @ 120mA, 4.5V

-55°C ~ 150°C (TA)

Surface Mount

SOT-23-3

TO-236-3, SC-59, SOT-23-3

APT10045LFLLG

Microchip Technology

MOSFET N-CH 1000V 23A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

封装: -

Request a Quote

MOSFET (Metal Oxide)

1000 V

23A (Tc)

-

5V @ 2.5mA

154 nC @ 10 V

4350 pF @ 25 V

-

460mOhm @ 11.5A, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

APT5018BFLLG

Microchip Technology

MOSFET N-CH 500V 27A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封装: -

Request a Quote

MOSFET (Metal Oxide)

500 V

27A (Tc)

-

5V @ 1mA

58 nC @ 10 V

2596 pF @ 25 V

-

180mOhm @ 13.5A, 10V

-

Through Hole

TO-247 [B]

TO-247-3

APT10045LLLG

Microchip Technology

MOSFET N-CH 1000V 23A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

封装: -

Request a Quote

MOSFET (Metal Oxide)

1000 V

23A (Tc)

-

5V @ 2.5mA

154 nC @ 10 V

4350 pF @ 25 V

-

450mOhm @ 11.5A, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
MSC017SMA120J	Microchip Technology	MOSFET SIC 1200V 17 MOHM SOT-227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Supplier Device Package: SOT-227 Package / Case: -	封装: -	库存30	SiCFET (Silicon Carbide)	1200 V	88A (Tc)	20V	2.7V @ 4.5mA (Typ)	249 nC @ 20 V	5280 pF @ 1000 V	+23V, -10V	-	278W (Tc)	22mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	-	SOT-227	-
APT10M07JVFR	Microchip Technology	MOSFET N-CH 100V 225A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 1050 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	225A (Tc)	-	4V @ 5mA	1050 nC @ 10 V	21600 pF @ 25 V	-	-	-	7mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT50M50L2LLG	Microchip Technology	MOSFET N-CH 500V 89A 264 MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50mOhm @ 44.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: 264 MAX™ [L2] Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	500 V	89A (Tc)	-	5V @ 5mA	200 nC @ 10 V	10550 pF @ 25 V	-	-	-	50mOhm @ 44.5A, 10V	-	Through Hole	264 MAX™ [L2]	TO-264-3, TO-264AA
APT8014L2LLG	Microchip Technology	MOSFET N-CH 800V 52A 264 MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: 264 MAX™ [L2] Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	800 V	52A (Tc)	-	5V @ 5mA	285 nC @ 10 V	7238 pF @ 25 V	-	-	-	140mOhm @ 26A, 10V	-	Through Hole	264 MAX™ [L2]	TO-264-3, TO-264AA
APT10M11JVFR	Microchip Technology	MOSFET N-CH 100V 144A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 144A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 11mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	144A (Tc)	-	4V @ 2.5mA	450 nC @ 10 V	10380 pF @ 25 V	-	-	-	11mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
MSC180SMA120SA	Microchip Technology	MOSFET SIC 1200 V 180 MOHM TO-26 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.26V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, DPak (7 Leads + Tab)	封装: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	3.26V @ 500µA	34 nC @ 20 V	510 pF @ 1000 V	+23V, -10V	-	125W (Tc)	225mOhm @ 8A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, DPak (7 Leads + Tab)
MSC180SMA120S	Microchip Technology	MOSFET SIC 1200 V 180 MOHM TO-26 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.26V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	库存543	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	3.26V @ 500µA	34 nC @ 20 V	510 pF @ 1000 V	+23V, -10V	-	125W (Tc)	225mOhm @ 8A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC180SMA120B	Microchip Technology	MOSFET 1200V 25A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 1000 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封装: -	库存3	MOSFET (Metal Oxide)	1200 V	21A (Tc)	5V, 20V	4.5V @ 500µA	36 nC @ 20 V	530 pF @ 1000 V	+23V, -10V	-	147W (Tc)	225mOhm @ 8A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
APT8015JVFR	Microchip Technology	MOSFET N-CH 800V 44A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17650 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	MOSFET (Metal Oxide)	800 V	44A (Tc)	-	4V @ 5mA	285 nC @ 10 V	17650 pF @ 25 V	-	-	-	150mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT34M60S	Microchip Technology	MOSFET N-CH 600V 36A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 624W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	库存138	MOSFET (Metal Oxide)	600 V	36A (Tc)	10V	5V @ 1mA	165 nC @ 10 V	6640 pF @ 25 V	±30V	-	624W (Tc)	190mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT20M18B2VFRG	Microchip Technology	MOSFET N-CH 200V 100A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	封装: -	Request a Quote	MOSFET (Metal Oxide)	200 V	100A (Tc)	-	4V @ 2.5mA	330 nC @ 10 V	9880 pF @ 25 V	-	-	-	18mOhm @ 50A, 10V	-	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT10M11LVRG	Microchip Technology	MOSFET N-CH 100V 100A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (L) Package / Case: TO-264-3, TO-264AA	封装: -	库存72	MOSFET (Metal Oxide)	100 V	100A (Tc)	10V	4V @ 2.5mA	450 nC @ 10 V	10300 pF @ 25 V	±30V	-	520W (Tc)	11mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (L)	TO-264-3, TO-264AA
MSC100SM70JCU3	Microchip Technology	SICFET N-CH 700V 124A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 365W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	SiCFET (Silicon Carbide)	700 V	124A (Tc)	20V	2.4V @ 4mA	215 nC @ 20 V	4500 pF @ 700 V	+25V, -10V	-	365W (Tc)	19mOhm @ 40A, 20V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
MSC100SM70JCU2	Microchip Technology	SICFET N-CH 700V 124A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 365W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	封装: -	库存33	SiCFET (Silicon Carbide)	700 V	124A (Tc)	20V	2.4V @ 4mA	215 nC @ 20 V	4500 pF @ 700 V	+25V, -10V	-	365W (Tc)	19mOhm @ 40A, 20V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
APT12067LFLLG	Microchip Technology	MOSFET N-CH 1200V 18A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	18A (Tc)	-	5V @ 2.5mA	150 nC @ 10 V	4420 pF @ 25 V	-	-	-	670mOhm @ 9A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT20M18LVFRG	Microchip Technology	MOSFET N-CH 200V 100A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	200 V	100A (Tc)	-	4V @ 2.5mA	330 nC @ 10 V	9880 pF @ 25 V	-	-	-	18mOhm @ 50A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT6013JFLL	Microchip Technology	MOSFET N-CH 600V 39A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	39A (Tc)	-	5V @ 2.5mA	130 nC @ 10 V	5630 pF @ 25 V	-	-	-	130mOhm @ 19.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT10026L2LLG	Microchip Technology	MOSFET N-CH 1000V 38A 264 MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 260mOhm @ 19A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: 264 MAX™ [L2] Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	38A (Tc)	-	5V @ 5mA	267 nC @ 10 V	7114 pF @ 25 V	-	-	-	260mOhm @ 19A, 10V	-	Through Hole	264 MAX™ [L2]	TO-264-3, TO-264AA
APT20M34SLLG-TR	Microchip Technology	MOSFET N-CH 200V 74A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 403W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	200 V	74A (Tc)	10V	5V @ 1mA	60 nC @ 10 V	3660 pF @ 25 V	±30V	-	403W (Tc)	34mOhm @ 37A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT10045JFLL	Microchip Technology	MOSFET N-CH 1000V 21A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	21A (Tc)	-	5V @ 2.5mA	154 nC @ 10 V	4350 pF @ 25 V	-	-	-	460mOhm @ 11.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT6029BFLLG	Microchip Technology	MOSFET N-CH 600V 21A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	21A (Tc)	-	5V @ 1mA	65 nC @ 10 V	2615 pF @ 25 V	-	-	300W (Tc)	290mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
MSC025SMA120S	Microchip Technology	SICFET N-CH 1.2KV 100A D3PAK FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	库存396	SiCFET (Silicon Carbide)	1200 V	89A (Tc)	-	-	-	-	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC025SMA120B	Microchip Technology	SICFET N-CH 1.2KV 103A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封装: -	库存432	SiCFET (Silicon Carbide)	1200 V	103A (Tc)	20V	2.8V @ 1mA	232 nC @ 20 V	3020 pF @ 1000 V	+25V, -10V	-	500W (Tc)	31mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
MSC025SMA120J	Microchip Technology	SICFET N-CH 1.2KV 77A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	77A (Tc)	20V	2.8V @ 1mA	232 nC @ 20 V	3020 pF @ 1000 V	+25V, -10V	-	278W (Tc)	31mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
APT1201R4BLLG	Microchip Technology	MOSFET N-CH 1200V 9A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	9A (Tc)	10V	5V @ 1mA	120 nC @ 10 V	2500 pF @ 25 V	±30V	-	300W (Tc)	1.4Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
TP5335MF-G-VAO	Microchip Technology	MOSFET, P-CHANNEL ENHANCEMENT-MO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350 V Current - Continuous Drain (Id) @ 25°C: 85mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN (2x2) Package / Case: 6-VDFN Exposed Pad	封装: -	Request a Quote	MOSFET (Metal Oxide)	350 V	85mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	110 pF @ 25 V	±20V	-	360mW (Ta)	30Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN (2x2)	6-VDFN Exposed Pad
TN2130K1-G-VAO	Microchip Technology	MOSFET N-CH 300V 85MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 85mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 4.5V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	300 V	85mA (Tj)	4.5V	2.4V @ 1mA	-	50 pF @ 25 V	±20V	-	360mW (Ta)	25Ohm @ 120mA, 4.5V	-55°C ~ 150°C (TA)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
APT10045LFLLG	Microchip Technology	MOSFET N-CH 1000V 23A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	23A (Tc)	-	5V @ 2.5mA	154 nC @ 10 V	4350 pF @ 25 V	-	-	-	460mOhm @ 11.5A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT5018BFLLG	Microchip Technology	MOSFET N-CH 500V 27A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	500 V	27A (Tc)	-	5V @ 1mA	58 nC @ 10 V	2596 pF @ 25 V	-	-	-	180mOhm @ 13.5A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
APT10045LLLG	Microchip Technology	MOSFET N-CH 1000V 23A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	23A (Tc)	-	5V @ 2.5mA	154 nC @ 10 V	4350 pF @ 25 V	-	-	-	450mOhm @ 11.5A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA