页 2 - Microchip Technology 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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Microchip Technology 产品 - 晶体管 - FET，MOSFET - 单

记录 441
页  2/15
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数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MSC035SMA170B
Microchip Technology

MOSFET SIC 1700 V 45 MOHM TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
  • Operating Temperature: -60°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: -
库存102
SiCFET (Silicon Carbide)
1700 V
68A (Tc)
20V
3.25V @ 2.5mA (Typ)
178 nC @ 20 V
3300 pF @ 1000 V
+23V, -10V
-
370W (Tc)
45mOhm @ 30A, 20V
-60°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
MSCSM120SKM31CTBL1NG
Microchip Technology

PM-MOSFET-SIC-SBD-BL1

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 310W
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: -
  • Package / Case: Module
封装: -
库存81
SiCFET (Silicon Carbide)
1200 V
79A
20V
2.8V @ 1mA
232 nC @ 20 V
3020 pF @ 1000 V
+25V, -10V
-
310W
31mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Chassis Mount
-
Module
APT5020BVRG
Microchip Technology

MOSFET N-CH 500V 26A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
库存78
MOSFET (Metal Oxide)
500 V
26A (Tc)
-
4V @ 1mA
225 nC @ 10 V
4440 pF @ 25 V
-
-
-
200mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT20M18LVRG
Microchip Technology

MOSFET N-CH 200V 100A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
200 V
100A (Tc)
-
4V @ 2.5mA
330 nC @ 10 V
9880 pF @ 25 V
-
-
-
18mOhm @ 50A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT5024SLLG
Microchip Technology

MOSFET N-CH 500V 22A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
22A (Tc)
-
5V @ 1mA
43 nC @ 10 V
1900 pF @ 25 V
-
-
-
240mOhm @ 11A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT50M75B2LLG
Microchip Technology

MOSFET N-CH 500V 57A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 570W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
57A (Tc)
10V
5V @ 2.5mA
125 nC @ 10 V
5590 pF @ 25 V
±30V
-
570W (Tc)
75mOhm @ 28.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT106N60LC6
Microchip Technology

MOSFET N-CH 600V 106A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 833W (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (L)
  • Package / Case: TO-264-3, TO-264AA
封装: -
库存189
MOSFET (Metal Oxide)
600 V
106A (Tc)
10V
3.5V @ 3.4mA
308 nC @ 10 V
8390 pF @ 25 V
±20V
-
833W (Tc)
35mOhm @ 53A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (L)
TO-264-3, TO-264AA
TN2130MF-G-VAO
Microchip Technology

MOSFET, N-CHANNEL ENHANCEMENT-MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN (2x2)
  • Package / Case: 6-VDFN Exposed Pad
封装: -
Request a Quote
MOSFET (Metal Oxide)
300 V
85mA (Tj)
4.5V
2.4V @ 1mA
-
50 pF @ 25 V
±20V
-
360mW (Ta)
25Ohm @ 120mA, 4.5V
-55°C ~ 150°C (TA)
Surface Mount
6-DFN (2x2)
6-VDFN Exposed Pad
APT50M75LLLG
Microchip Technology

MOSFET N-CH 500V 57A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
57A (Tc)
-
5V @ 2.5mA
125 nC @ 10 V
5590 pF @ 25 V
-
-
-
75mOhm @ 28.5A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT8011JFLL
Microchip Technology

MOSFET N-CH 800V 51A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 25.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
库存33
MOSFET (Metal Oxide)
800 V
51A (Tc)
-
5V @ 5mA
650 nC @ 10 V
9480 pF @ 25 V
-
-
-
125mOhm @ 25.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT10090SLLG
Microchip Technology

MOSFET N-CH 1000V 12A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
12A (Tc)
-
5V @ 1mA
71 nC @ 10 V
1969 pF @ 25 V
-
-
-
900mOhm @ 6A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT6029BLLG
Microchip Technology

MOSFET N-CH 600V 21A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
21A (Tc)
-
5V @ 1mA
65 nC @ 10 V
2615 pF @ 25 V
-
-
300W (Tc)
290mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT10078BFLLG
Microchip Technology

MOSFET N-CH 1000V 14A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
14A (Tc)
-
5V @ 1mA
95 nC @ 10 V
2525 pF @ 25 V
-
-
-
780mOhm @ 7A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT10050LVFRG
Microchip Technology

MOSFET N-CH 1000V 21A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
封装: -
库存21
MOSFET (Metal Oxide)
1000 V
21A (Tc)
-
4V @ 2.5mA
500 nC @ 10 V
7900 pF @ 25 V
-
-
-
500mOhm @ 500mA, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT10M25BVRG
Microchip Technology

MOSFET N-CH 100V 75A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
75A (Tc)
-
4V @ 1mA
225 nC @ 10 V
5160 pF @ 25 V
-
-
-
25mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT12060LVRG
Microchip Technology

MOSFET N-CH 1200V 20A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (L)
  • Package / Case: TO-264-3, TO-264AA
封装: -
库存90
MOSFET (Metal Oxide)
1200 V
20A (Tc)
10V
4V @ 2.5mA
650 nC @ 10 V
9500 pF @ 25 V
±30V
-
625W (Tc)
600mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (L)
TO-264-3, TO-264AA
APT5020BVFRG
Microchip Technology

MOSFET N-CH 500V 26A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
库存2,544
MOSFET (Metal Oxide)
500 V
26A (Tc)
-
4V @ 1mA
225 nC @ 10 V
4440 pF @ 25 V
-
-
-
200mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT20M20B2FLLG
Microchip Technology

MOSFET N-CH 200V 100A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
封装: -
Request a Quote
MOSFET (Metal Oxide)
200 V
100A (Tc)
-
5V @ 2.5mA
110 nC @ 10 V
6850 pF @ 25 V
-
-
-
20mOhm @ 50A, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APL602L-1
Microchip Technology

MOSFET LINEAR 600 V 49 A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 730W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
49A (Tc)
12V
4V @ 2.5mA
-
9000 pF @ 25 V
±30V
-
730W (Tc)
125mOhm @ 24.5A, 12V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
MSC080SMA120JS15
Microchip Technology

MOSFET SIC 1200V 80 MOHM 15A SOT

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 143W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
封装: -
库存45
SiCFET (Silicon Carbide)
1200 V
31A (Tc)
20V
2.8V @ 1mA
64 nC @ 20 V
838 pF @ 1000 V
+23V, -10V
-
143W (Tc)
100mOhm @ 15A, 20V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
APT8030LVFRG
Microchip Technology

MOSFET N-CH 800V 27A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
800 V
27A (Tc)
-
4V @ 2.5mA
510 nC @ 10 V
7900 pF @ 25 V
-
-
-
300mOhm @ 500mA, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT1003RSLLG
Microchip Technology

MOSFET N-CH 1000V 4A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
4A (Tc)
-
5V @ 1mA
34 nC @ 10 V
694 pF @ 25 V
-
-
-
3Ohm @ 2A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT8011JLL
Microchip Technology

MOSFET N-CH 800V 51A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 25.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
库存30
MOSFET (Metal Oxide)
800 V
51A (Tc)
-
5V @ 5mA
650 nC @ 10 V
9480 pF @ 25 V
-
-
-
110mOhm @ 25.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT8043SFLLG
Microchip Technology

MOSFET N-CH 800V 20A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 430mOhm @ 10A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
800 V
20A (Tc)
-
5V @ 1mA
85 nC @ 10 V
2500 pF @ 25 V
-
-
-
430mOhm @ 10A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT20M20JFLL
Microchip Technology

MOSFET N-CH 200V 104A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 52A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
200 V
104A (Tc)
-
5V @ 2.5mA
110 nC @ 10 V
6850 pF @ 25 V
-
-
-
20mOhm @ 52A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT34M60S-TR
Microchip Technology

MOSFET N-CH 600V 36A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 624W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
36A (Tc)
10V
5V @ 1mA
165 nC @ 10 V
6640 pF @ 25 V
±30V
-
624W (Tc)
190mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT20M20JLL
Microchip Technology

MOSFET N-CH 200V 104A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 52A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
200 V
104A (Tc)
-
5V @ 2.5mA
110 nC @ 10 V
6850 pF @ 25 V
-
-
-
20mOhm @ 52A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
MSC360SMA120S
Microchip Technology

MOSFET SIC 1200 V 360 MOHM TO-26

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存615
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MSC360SMA120B
Microchip Technology

MOSFET SIC 1200 V 360 MOHM TO-24

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.14V @ 500µA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: -
库存414
SiCFET (Silicon Carbide)
1200 V
11A (Tc)
20V
3.14V @ 500µA (Typ)
21 nC @ 20 V
255 pF @ 1000 V
+23V, -10V
-
78W (Tc)
450mOhm @ 5A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT10086BVFRG
Microchip Technology

MOSFET N-CH 1000V 13A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 860mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
13A (Tc)
-
4V @ 1mA
275 nC @ 10 V
4440 pF @ 25 V
-
-
-
860mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3