页 50 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IRG4RC20FTRPBF	Infineon Technologies	IGBT 600V 22A 66W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 22A Current - Collector Pulsed (Icm): 44A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 66W Switching Energy: 190µJ (on), 920µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 26ns/194ns Test Condition: 480V, 12A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,400
AIKQ100N60CTXKSA1	Infineon Technologies	IC DISCRETE 600V TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 400A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Power - Max: 714W Switching Energy: 3.1mJ (on), 2.5mJ (off) Input Type: Standard Gate Charge: 610nC Td (on/off) @ 25°C: 30ns/290ns Test Condition: 400V, 100A, 3.6 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	封装: TO-247-3	库存7,312
IKW30N65WR5XKSA1	Infineon Technologies	IGBT 650V 30A UFAST DIO TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 185W Switching Energy: 990µJ (on), 330µJ (off) Input Type: Standard Gate Charge: 155nC Td (on/off) @ 25°C: 39ns/367ns Test Condition: 400V, 15A, 26 Ohm, 15V Reverse Recovery Time (trr): 95ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封装: TO-247-3	库存7,476
IRFR5505CPBF	Infineon Technologies	MOSFET P-CH 55V 18A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存4,928
BSO200N03S	Infineon Technologies	MOSFET N-CH 30V 7A 8DSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存443,304
BSC117N08NS5ATMA1	Infineon Technologies	MOSFET N-CH 80V 49A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 22µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存3,536
IPP111N15N3 G	Infineon Technologies	MOSFET N-CH 150V 83A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 83A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存6,784
SMBTA 42 E6433	Infineon Technologies	TRANS NPN 300V 0.5A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 360mW Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存3,664
BCX71JE6433HTMA1	Infineon Technologies	TRANS PNP 45V 0.1A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存6,992
IRAM136-1061A	Infineon Technologies	IC HYBRID PWR 600V 12A SIP05 Type: IGBT Configuration: 3 Phase Current: 12A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads	封装: 29-PowerSSIP Module, 21 Leads, Formed Leads	库存7,024
SIDC42D170E6	Infineon Technologies	DIODE GEN PURP 1.7KV 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	封装: Die	库存6,992
IDH05G120C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 1.2KV 5A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 33µA @ 1200V Capacitance @ Vr, F: 301pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存7,872
BAW56SB6327XT	Infineon Technologies	DIODE ARRAY GP 80V 200MA SOT363 Diode Configuration: 2 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 150nA @ 70V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存3,152
TLE4678EL	Infineon Technologies	IC REG LINEAR 5V 200MA 14SSOP Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 45V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.35V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 80µA ~ 8mA PSRR: 65dB (100Hz) Control Features: Reset, Watchdog Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-SSOP-14-EP	封装: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad	库存152,988
IR2103PBF	Infineon Technologies	IC DRIVER HALF BRIDGE 600V 8DIP Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 100ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封装: 8-DIP (0.300", 7.62mm)	库存351,144
PEF2026TPV11NK	Infineon Technologies	IC NETWORK TERMINATOR PDSO-20 Function: High Voltage Power Controller Interface: ISDN Number of Circuits: 1 Voltage - Supply: - Current - Supply: 700µA Power (Watts): - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Supplier Device Package: P-DSO-20	封装: 20-SOIC (0.433", 11.00mm Width) Exposed Pad	库存4,896
KP235XTMA1	Infineon Technologies	IC ANLG BAROMETRIC SNSR DSOF8-16 Pressure Type: Absolute Operating Pressure: 16.68 PSI (115 kPa) Output Type: Analog Voltage Output: 0.5 V ~ 4.5 V Accuracy: ±0.348 PSI (±2.4 kPa) Voltage - Supply: 4.5 V ~ 5.5 V Port Size: - Port Style: No Port Features: Amplified Output, Temperature Compensated Termination Style: Surface Mount Maximum Pressure: - Operating Temperature: -40°C ~ 125°C Package / Case: 8-SMD Module Supplier Device Package: -	封装: 8-SMD Module	库存24,678
TLE42764DV50ATMA1	Infineon Technologies	IC REG LINEAR 5V 400MA TO252-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.5V @ 250mA Current - Output: 400mA Current - Quiescent (Iq): 220µA Current - Supply (Max): 25mA PSRR: 54dB (100Hz) Control Features: Enable Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: PG-TO252-5	封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD	库存21,480
CY95F634KNPMC-G-107-UNE2	Infineon Technologies	MULTI-MARKET MCUS Core Processor: F²MC-8FX Core Size: 8-Bit Speed: 16.25MHz Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: LVD, LVR, POR, PWM, WDT Number of I/O: 29 Program Memory Size: 20KB (20K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 1K x 8 Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Data Converters: A/D 8x8/10b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LQFP Supplier Device Package: 32-LQFP (7x7)	封装: -	Request a Quote
TT92N16KOFHPSA2	Infineon Technologies	THYR / DIODE MODULE DK Structure: Common Anode - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6 kV Current - On State (It (AV)) (Max): 104 A Current - On State (It (RMS)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Current - Hold (Ih) (Max): 200 mA Operating Temperature: 130°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	封装: -	Request a Quote
TLE9879QXA40XUMA3	Infineon Technologies	IC SOC MOTOR DRIVER 48VQFN Applications: - Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH (128kB) Controller Series: TLE987x RAM Size: 6K x 8 Interface: DMA, LIN, SPI, SSC, UART Number of I/O: 10 Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-31	封装: -	库存7,479
FD600R17KE3B2NOSA1	Infineon Technologies	IGBT MODULE 1700V 4300W IGBT Type: - Configuration: Single Chopper Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): - Power - Max: 4300 W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	Request a Quote
IPC60R360P7X7SA1	Infineon Technologies	MOSFET N-CH DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote
FB20R06W1E3B11BPSA1	Infineon Technologies	IGBT MODULE 600V 20A IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 29 A Power - Max: 94 W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	封装: -	库存72
BSM15GD120DN2E3224BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2A-211 IGBT Type: - Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 25 A Power - Max: 145 W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 1 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2A	封装: -	Request a Quote
F417MR12W1M1HB76BPSA1	Infineon Technologies	LOW POWER EASY IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存69
S6J332CKSESE20000	Infineon Technologies	TRAVEO-40NM Core Processor: ARM® Cortex®-R5F Core Size: 32-Bit Speed: 240MHz Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Number of I/O: 150 Program Memory Size: 2.0625MB (2.0625M x 8) Program Memory Type: FLASH EEPROM Size: 112K x 8 RAM Size: 544K x 8 Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V Data Converters: A/D 48x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 208-LQFP Exposed Pad Supplier Device Package: 208-TEQFP (28x28)	封装: -	Request a Quote
CG9068AMT	Infineon Technologies	IC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
S80KS5123GABHI020	Infineon Technologies	IC PSRAM 512MBIT SPI/OCTL 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 512Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封装: -	库存570
TLF35585QVS02XUMA1	Infineon Technologies	OPTIREG PMIC Applications: - Current - Supply: - Voltage - Supply: 3V ~ 40V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-79	封装: -	Request a Quote

IRG4RC20FTRPBF

Infineon Technologies

IGBT 600V 22A 66W DPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 22A
Current - Collector Pulsed (Icm): 44A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Power - Max: 66W
Switching Energy: 190µJ (on), 920µJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 26ns/194ns
Test Condition: 480V, 12A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,400

AIKQ100N60CTXKSA1

Infineon Technologies

IC DISCRETE 600V TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 160A
Current - Collector Pulsed (Icm): 400A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Power - Max: 714W
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Input Type: Standard
Gate Charge: 610nC
Td (on/off) @ 25°C: 30ns/290ns
Test Condition: 400V, 100A, 3.6 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-46

封装: TO-247-3

库存7,312

IKW30N65WR5XKSA1

Infineon Technologies

IGBT 650V 30A UFAST DIO TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Power - Max: 185W
Switching Energy: 990µJ (on), 330µJ (off)
Input Type: Standard
Gate Charge: 155nC
Td (on/off) @ 25°C: 39ns/367ns
Test Condition: 400V, 15A, 26 Ohm, 15V
Reverse Recovery Time (trr): 95ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

封装: TO-247-3

库存7,476

IRFR5505CPBF

Infineon Technologies

MOSFET P-CH 55V 18A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存4,928

BSO200N03S

Infineon Technologies

MOSFET N-CH 30V 7A 8DSO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存443,304

BSC117N08NS5ATMA1

Infineon Technologies

MOSFET N-CH 80V 49A 8TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存3,536

IPP111N15N3 G

Infineon Technologies

MOSFET N-CH 150V 83A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 75V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 83A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存6,784

SMBTA 42 E6433

Infineon Technologies

TRANS NPN 300V 0.5A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 360mW
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存3,664

BCX71JE6433HTMA1

Infineon Technologies

TRANS PNP 45V 0.1A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存6,992

IRAM136-1061A

Infineon Technologies

IC HYBRID PWR 600V 12A SIP05

Type: IGBT
Configuration: 3 Phase
Current: 12A
Voltage: 600V
Voltage - Isolation: 2000Vrms
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads

封装: 29-PowerSSIP Module, 21 Leads, Formed Leads

库存7,024

SIDC42D170E6

Infineon Technologies

DIODE GEN PURP 1.7KV 50A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 50A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C

封装: Die

库存6,992

IDH05G120C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 1.2KV 5A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 33µA @ 1200V
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存7,872

BAW56SB6327XT

Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT363

Diode Configuration: 2 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 150nA @ 70V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存3,152

TLE4678EL

Infineon Technologies

IC REG LINEAR 5V 200MA 14SSOP

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 45V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.35V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 80µA ~ 8mA
PSRR: 65dB (100Hz)
Control Features: Reset, Watchdog
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-SSOP-14-EP

封装: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad

库存152,988

IR2103PBF

Infineon Technologies

IC DRIVER HALF BRIDGE 600V 8DIP

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 100ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

库存351,144

PEF2026TPV11NK

Infineon Technologies

IC NETWORK TERMINATOR PDSO-20

Function: High Voltage Power Controller
Interface: ISDN
Number of Circuits: 1
Voltage - Supply: -
Current - Supply: 700µA
Power (Watts): -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Supplier Device Package: P-DSO-20

封装: 20-SOIC (0.433", 11.00mm Width) Exposed Pad

库存4,896

KP235XTMA1

Infineon Technologies

IC ANLG BAROMETRIC SNSR DSOF8-16

Pressure Type: Absolute
Operating Pressure: 16.68 PSI (115 kPa)
Output Type: Analog Voltage
Output: 0.5 V ~ 4.5 V
Accuracy: ±0.348 PSI (±2.4 kPa)
Voltage - Supply: 4.5 V ~ 5.5 V
Port Size: -
Port Style: No Port
Features: Amplified Output, Temperature Compensated
Termination Style: Surface Mount
Maximum Pressure: -
Operating Temperature: -40°C ~ 125°C
Package / Case: 8-SMD Module
Supplier Device Package: -

封装: 8-SMD Module

库存24,678

TLE42764DV50ATMA1

Infineon Technologies

IC REG LINEAR 5V 400MA TO252-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 40V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.5V @ 250mA
Current - Output: 400mA
Current - Quiescent (Iq): 220µA
Current - Supply (Max): 25mA
PSRR: 54dB (100Hz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: PG-TO252-5

封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD

库存21,480

CY95F634KNPMC-G-107-UNE2

Infineon Technologies

MULTI-MARKET MCUS

Core Processor: F²MC-8FX
Core Size: 8-Bit
Speed: 16.25MHz
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, LVR, POR, PWM, WDT
Number of I/O: 29
Program Memory Size: 20KB (20K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 1K x 8
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Data Converters: A/D 8x8/10b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Supplier Device Package: 32-LQFP (7x7)

封装: -

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TT92N16KOFHPSA2

Infineon Technologies

THYR / DIODE MODULE DK

Structure: Common Anode - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.6 kV
Current - On State (It (AV)) (Max): 104 A
Current - On State (It (RMS)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Current - Hold (Ih) (Max): 200 mA
Operating Temperature: 130°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

封装: -

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TLE9879QXA40XUMA3

Infineon Technologies

IC SOC MOTOR DRIVER 48VQFN

Applications: -
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Controller Series: TLE987x
RAM Size: 6K x 8
Interface: DMA, LIN, SPI, SSC, UART
Number of I/O: 10
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-31

封装: -

库存7,479

FD600R17KE3B2NOSA1

Infineon Technologies

IGBT MODULE 1700V 4300W

IGBT Type: -
Configuration: Single Chopper
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): -
Power - Max: 4300 W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

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IPC60R360P7X7SA1

Infineon Technologies

MOSFET N-CH DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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FB20R06W1E3B11BPSA1

Infineon Technologies

IGBT MODULE 600V 20A

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 29 A
Power - Max: 94 W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

封装: -

库存72

BSM15GD120DN2E3224BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2A-211

IGBT Type: -
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Power - Max: 145 W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2A

封装: -

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F417MR12W1M1HB76BPSA1

Infineon Technologies

LOW POWER EASY

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存69

S6J332CKSESE20000

Infineon Technologies

TRAVEO-40NM

Core Processor: ARM® Cortex®-R5F
Core Size: 32-Bit
Speed: 240MHz
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Number of I/O: 150
Program Memory Size: 2.0625MB (2.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 112K x 8
RAM Size: 544K x 8
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Data Converters: A/D 48x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LQFP Exposed Pad
Supplier Device Package: 208-TEQFP (28x28)

封装: -

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CG9068AMT

Infineon Technologies

IC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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S80KS5123GABHI020

Infineon Technologies

IC PSRAM 512MBIT SPI/OCTL 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 512Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封装: -

库存570

TLF35585QVS02XUMA1

Infineon Technologies

OPTIREG PMIC

Applications: -
Current - Supply: -
Voltage - Supply: 3V ~ 40V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-79

封装: -

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