页 51 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  51/567
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AUIRGS30B60KTRL
Infineon Technologies

IGBT 600V 78A 370W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
  • Power - Max: 370W
  • Switching Energy: 350µJ (on), 825µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 46ns/185ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,656
hot IRFS7437PBF
Infineon Technologies

MOSFET N CH 40V 195A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存39,240
IPI65R190CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 17.5A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存5,792
IRLR3802PBF
Infineon Technologies

MOSFET N-CH 12V 84A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 6V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,432
hot IRLHM620TRPBF
Infineon Technologies

MOSFET N-CH 20V 26A PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (3x3)
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存7,520
IPP030N10N5AKSA1
Infineon Technologies

MOSFET N-CH TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 184µA
  • Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存8,748
IPP120P04P4L03AKSA1
Infineon Technologies

MOSFET P-CH 40V 120A TO220-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封装: TO-220-3
库存16,476
PTVA101K02EVV1R0XTMA1
Infineon Technologies

IC AMP RF LDMOS H-36275-4

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 900W
  • Voltage - Rated: 105V
  • Package / Case: H-36275-4
  • Supplier Device Package: H-36275-4
封装: H-36275-4
库存6,816
hot IRF9910
Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A, 12A
  • Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存28,860
BAS140WE6327HTSA1
Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 1µA @ 30V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: PG-SOD323-2
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: SC-76, SOD-323
库存85,692
IR3101
Infineon Technologies

IC POWER MODULE 1.6A 500V 11-SIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 11-SIP, 9 Leads
  • Supplier Device Package: 11-SIP
封装: 11-SIP, 9 Leads
库存5,664
98-0066
Infineon Technologies

IC MOSFET DRIVER CUR-SENSE 8SOIC

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存7,776
2EDL05I06PJXUMA1
Infineon Technologies

IC GATE DVR BRDG 60V .25A DSO14

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 1.1V, 1.7V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 48ns, 24ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-14
封装: 14-SOIC (0.154", 3.90mm Width)
库存25,194
SAK-XC886CM-6FFA 5V AC
Infineon Technologies

IC MCU 8BIT 24KB FLASH 48TQFP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 24MHz
  • Connectivity: CAN, SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 34
  • Program Memory Size: 24KB (24K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1.75K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 48-TQFP
  • Supplier Device Package: 48-TQFP (7x7)
封装: 48-TQFP
库存2,672
SAF-XC886CM-8FFI 3V3 AC
Infineon Technologies

IC MCU 8BIT 32KB FLASH 48TQFP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 24MHz
  • Connectivity: CAN, SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 34
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1.75K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 48-TQFP
  • Supplier Device Package: 48-TQFP (7x7)
封装: 48-TQFP
库存5,808
XE167K72F66LACFXQMA1
Infineon Technologies

IC MCU 16BIT 576KB FLASH 144LQFP

  • Core Processor: C166SV2
  • Core Size: 16-Bit
  • Speed: 66MHz
  • Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: I2S, POR, PWM, WDT
  • Number of I/O: 118
  • Program Memory Size: 576KB (576K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 50K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 16x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 144-LQFP Exposed Pad
  • Supplier Device Package: 144-LQFP (20x20)
封装: 144-LQFP Exposed Pad
库存7,344
XC878CM16FFA5VACKXUMA1
Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 27MHz
  • Connectivity: CAN, SPI, SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 40
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 3.25K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (10x10)
封装: 64-LQFP
库存5,760
XMC1100T016F0008ABXUMA1
Infineon Technologies

IC MCU 32BIT 8KB FLASH 16TSSOP

  • Core Processor: ARM? Cortex?-M0
  • Core Size: 32-Bit
  • Speed: 32MHz
  • Connectivity: I2C, LIN, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
  • Number of I/O: 11
  • Program Memory Size: 8KB (8K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
  • Data Converters: A/D 6x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: PG-TSSOP-16-8
封装: 16-TSSOP (0.173", 4.40mm Width)
库存3,424
PVT442S-T
Infineon Technologies

IC RELAY 400V 170MA AC/DC 6SMD

  • Circuit: SPST-NC (1 Form B)
  • Output Type: AC, DC
  • On-State Resistance (Max): 16 Ohm
  • Load Current: 170mA
  • Voltage - Input: 1.2VDC
  • Voltage - Load: 0 ~ 400 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 6-SMD, Gull Wing
  • Supplier Device Package: 6-SMT
  • Relay Type: Relay
封装: 6-SMD, Gull Wing
库存2,916
SLB9635TT12FW316XUMA1
Infineon Technologies

IC SECURITY TPM I2C 28TSSOP

  • Applications: Trusted Platform Module (TPM)
  • Core Processor: 16-Bit
  • Program Memory Type: -
  • Controller Series: -
  • RAM Size: -
  • Interface: LPC
  • Number of I/O: 2
  • Voltage - Supply: 3.3V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 28-TSSOP
封装: 28-TSSOP (0.173", 4.40mm Width)
库存7,856
BSP752TXUMA1
Infineon Technologies

IC SW 1CH 60V HISIDE 8POWERSOIC

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 6 V ~ 52 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.3A
  • Rds On (Typ): 150 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: P-DSO-8
封装: 8-SOIC (0.154", 3.90mm Width)
库存655,272
PMB3543E6327XQSA1
Infineon Technologies

TELECOM IC

  • Function: -
  • Interface: -
  • Number of Circuits: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Power (Watts): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
CY8C4126AZS-M443
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
  • Number of I/O: 38
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 8K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x12b SAR
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
封装: -
Request a Quote
CG8885AM
Infineon Technologies

IC

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
CP7936ATT
Infineon Technologies

INFINEON

  • Type: -
  • Protocol: -
  • Number of Drivers/Receivers: -
  • Duplex: -
  • Receiver Hysteresis: -
  • Data Rate: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
CY9AFB44MBBGL-GK9E1
Infineon Technologies

IC MCU 32BIT 288KB FLASH 96FBGA

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit Single-Core
  • Speed: 40MHz
  • Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
  • Peripherals: DMA, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 66
  • Program Memory Size: 288KB (288K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
  • Data Converters: A/D 17x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 96-LFBGA
  • Supplier Device Package: 96-FBGA (6x6)
封装: -
Request a Quote
IRFHM831TR2PBF
Infineon Technologies

MOSFET N-CH 30V 14A PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (3x3)
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
IPD60R750E6BTMA1
Infineon Technologies

MOSFET N-CH 600V 5.7A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
IDK08G65C5XTMA2
Infineon Technologies

DIODE SIL CARB 650V 8A TO263-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存3,000
IPP65R110CFDXKSA2
Infineon Technologies

MOSFET N-CH 650V 31.2A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 277.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封装: -
库存1,398