页 47 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  47/567
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hot AUIRLS3034-7P
Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 10990pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
库存127,800
BSO130N03MSGXUMA1
Infineon Technologies

MOSFET N-CH 30V 9A 8DSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-8
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存4,624
SPP24N60CFDHKSA1
Infineon Technologies

MOSFET N-CH 650V 21.7A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 185 mOhm @ 15.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封装: TO-220-3
库存3,584
SPI80N03S2-03
Infineon Technologies

MOSFET N-CH 30V 80A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存2,624
IPD050N03LGBTMA1
Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,064
IPC60R2K0C6X1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存7,408
BSD316SNH6327XTSA1
Infineon Technologies

MOSFET N-CH 30V 1.4A SOT363

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT363-6
  • Package / Case: 6-VSSOP, SC-88, SOT-363
封装: 6-VSSOP, SC-88, SOT-363
库存4,560
hot IPD60R450E6
Infineon Technologies

MOSFET N-CH 600V 9.2A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,680
hot IRF5210PBF
Infineon Technologies

MOSFET P-CH 100V 40A TO-220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存6,400
BTS7904SAKSA1
Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO220

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V, 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
  • Power - Max: 69W, 96W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-220-5
  • Supplier Device Package: PG-TO220-5-13
封装: TO-220-5
库存2,224
SIDC14D60C6Y
Infineon Technologies

DIODE GEN PURP 600V 50A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 50A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: Die
库存7,936
IR21814SPBF
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 1.9A, 2.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
封装: 14-SOIC (0.154", 3.90mm Width)
库存6,972
ICE3AR1080VJZXKLA1
Infineon Technologies

IC OFFLINE CTRLR SMPS CM 7DIP

  • Output Isolation: Isolated
  • Internal Switch(s): Yes
  • Voltage - Breakdown: 800V
  • Topology: Flyback
  • Voltage - Start Up: 17V
  • Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
  • Duty Cycle: 75%
  • Frequency - Switching: 100kHz
  • Power (Watts): 71W
  • Fault Protection: Over Load, Over Temperature, Over Voltage
  • Control Features: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
  • Supplier Device Package: PG-DIP-7
  • Mounting Type: Through Hole
封装: 8-DIP (0.300", 7.62mm), 7 Leads
库存2,032
hot TLE4945-2L
Infineon Technologies

MAGNETIC SWITCH BIPOLAR PSSO-3-2

  • Function: Bipolar Switch
  • Technology: Hall Effect
  • Polarization: South Pole
  • Sensing Range: 6mT Trip, -6mT Release
  • Test Condition: 25°C
  • Voltage - Supply: 3.8 V ~ 24 V
  • Current - Supply (Max): 8mA
  • Current - Output (Max): 100mA
  • Output Type: Open Collector
  • Features: Temperature Compensated
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 3-SIP, SSO-3-02
  • Supplier Device Package: P-SSO-3-2
封装: 3-SIP, SSO-3-02
库存142,836
TLE4966LHALA1
Infineon Technologies

MAGNETIC SWITCH BIPOLAR PSSO-4-1

  • Function: Bipolar Switch
  • Technology: Hall Effect
  • Polarization: South Pole
  • Sensing Range: 10mT Trip, -10mT Release
  • Test Condition: 25°C
  • Voltage - Supply: 2.7 V ~ 18 V
  • Current - Supply (Max): 7mA
  • Current - Output (Max): 10mA
  • Output Type: Open Collector
  • Features: Temperature Compensated
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 4-SIP, SSO-4-01
  • Supplier Device Package: P-SSO-4-1
封装: 4-SIP, SSO-4-01
库存6,714
PVU414S-TPBF
Infineon Technologies

IC RELAY PHOTOVO 400V 140MA 6SMD

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 27 Ohm
  • Load Current: 140mA
  • Voltage - Input: 1.2VDC
  • Voltage - Load: 0 ~ 400 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 6-SMD (0.300", 7.62mm)
  • Supplier Device Package: 6-SMT
  • Relay Type: Relay
封装: 6-SMD (0.300", 7.62mm)
库存5,202
hot PVD1354NPBF
Infineon Technologies

IC RELAY PHOTOVO 100V 550MA 8DIP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: DC
  • On-State Resistance (Max): 1.5 Ohm
  • Load Current: 550mA
  • Voltage - Input: 1.2VDC
  • Voltage - Load: 0 ~ 100 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
  • Supplier Device Package: 8-DIP Modified
  • Relay Type: Relay
封装: 8-DIP (0.300", 7.62mm), 4 Leads
库存6,732
IR3541MSM02TRP
Infineon Technologies

IC REGULATOR PG-VQFN-40-902

  • Applications: Controller, DDR, Intel VR12, AMD SVI
  • Voltage - Input: 3.3V
  • Number of Outputs: 2
  • Voltage - Output: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-VFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (6x6)
封装: 40-VFQFN Exposed Pad
库存5,840
S26HS02GTFPBHM040
Infineon Technologies

IC FLASH 2GBIT HYPERBUS 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: HyperBus
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (8x8)
封装: -
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TC364DP64F300WAAKXUMA1
Infineon Technologies

IC MCU 32BIT 4MB FLASH 144LQFP

  • Core Processor: TriCore™
  • Core Size: 32-Bit Dual-Core
  • Speed: 300MHz
  • Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
  • Peripherals: DMA, I2S, PWM, WDT
  • Number of I/O: -
  • Program Memory Size: 4MB (4M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 672K x 8
  • Voltage - Supply (Vcc/Vdd): 3.3V, 5V
  • Data Converters: -
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-LQFP Exposed Pad
  • Supplier Device Package: PG-LQFP-144-22
封装: -
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TLE9351VSJXTMA1
Infineon Technologies

IC TRANSCEIVER HALF 1/1 DSO-8

  • Type: Transceiver
  • Protocol: CANbus
  • Number of Drivers/Receivers: 1/1
  • Duplex: Half
  • Receiver Hysteresis: -
  • Data Rate: 5Mbps
  • Voltage - Supply: 4.75V ~ 5.25V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
封装: -
库存15,102
S6J336CHEBSE20000
Infineon Technologies

TRAVEO-40NM

  • Core Processor: ARM® Cortex®-R5F
  • Core Size: 32-Bit
  • Speed: 132MHz
  • Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
  • Peripherals: DMA, I2S, LVD, POR, PWM, WDT
  • Number of I/O: 94
  • Program Memory Size: 112KB (112K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 128K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 40x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 176-LQFP Exposed Pad
  • Supplier Device Package: 144-TEQFP (20x20)
封装: -
Request a Quote
MA2306DNSXUMA1
Infineon Technologies

AUDIO IC

  • Type: -
  • Output Type: -
  • Max Output Power x Channels @ Load: -
  • Voltage - Supply: -
  • Features: -
  • Mounting Type: -
  • Operating Temperature: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
BSS139IXTSA1
Infineon Technologies

MOSFET N-CH 250V 100MA SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 56µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存88,260
FF400R12KT4PBOSA1
Infineon Technologies

FF400R12KT4P - 1200 V, 400 A DUA

  • IGBT Type: Trench Field Stop
  • Configuration: Dual, Common Source
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 400 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 28000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MMHB
封装: -
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CY8C4147AZS-S245T
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
  • Number of I/O: 54
  • Program Memory Size: 128KB (128K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16, 20x10/12b SAR
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
封装: -
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111-4143BPBF
Infineon Technologies

IC REGULATOR CTLR SMD

  • Applications: -
  • Voltage - Input: -
  • Number of Outputs: -
  • Voltage - Output: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
ISC058N04NM5ATMA1
Infineon Technologies

40V 5.8M OPTIMOS MOSFET SUPERSO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8 FL
  • Package / Case: 8-PowerTDFN
封装: -
库存83,721
T2480N28TOFVTXPSA1
Infineon Technologies

SCR MODULE 2800V 5100A DO200AE

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 2.8 kV
  • Current - On State (It (AV)) (Max): 2490 A
  • Current - On State (It (RMS)) (Max): 5100 A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 47500A @ 50Hz
  • Current - Hold (Ih) (Max): 300 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
封装: -
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CY90351ESPMC-GS-151E1
Infineon Technologies

IC MCU 16BIT 64KB MROM 64LQFP

  • Core Processor: F²MC-16LX
  • Core Size: 16-Bit
  • Speed: 24MHz
  • Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
  • Peripherals: DMA, LVD, POR, WDT
  • Number of I/O: 51
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: Mask ROM
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
  • Data Converters: A/D 15x8/10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (12x12)
封装: -
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