Infineon Technologies 产品

IHW30N100TFKSA1

Infineon Technologies

IGBT 1000V 60A 412W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
• Power - Max: 412W
• Switching Energy: 1.6mJ (off)
• Input Type: Standard
• Gate Charge: 217nC
• Td (on/off) @ 25°C: 35ns/546ns
• Test Condition: 600V, 30A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: TO-247-3

IRG4BC20F

Infineon Technologies

IGBT 600V 16A 60W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 64A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
• Power - Max: 60W
• Switching Energy: 70µJ (on), 600µJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 24ns/190ns
• Test Condition: 480V, 9A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IRG4BC15UDSTRLP

Infineon Technologies

IGBT 600V 14A 49W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 42A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
• Power - Max: 49W
• Switching Energy: 240µJ (on), 260µJ (off)
• Input Type: Standard
• Gate Charge: 23nC
• Td (on/off) @ 25°C: 17ns/160ns
• Test Condition: 480V, 7.8A, 75 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7739L2TR1PBF

Infineon Technologies

MOSFET N-CH 40V 375A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 1 mOhm @ 160A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET L8
• Package / Case: DirectFET? Isometric L8

封装: DirectFET? Isometric L8

SPA16N50C3

Infineon Technologies

MOSFET N-CH 560V 16A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 560V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 675µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

IPW90R1K0C3FKSA1

Infineon Technologies

MOSFET N-CH 900V 5.7A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 370µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 89W (Tc)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

封装: TO-247-3

IPB60R600P6ATMA1

Infineon Technologies

MOSFET N-CH TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPC80N04S403ATMA1

Infineon Technologies

MOSFET N-CH 8TDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5720pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-23
• Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

IRLML2402GTRPBF

Infineon Technologies

MOSFET N-CH 20V 1.2A SOT-23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 540mW (Ta)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 930mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro3?/SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

PTFA212001F/1 P4

Infineon Technologies

IC FET RF LDMOS 200W H-37260-2

• Transistor Type: LDMOS
• Frequency: 2.14GHz
• Gain: 15.8dB
• Voltage - Test: 30V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 1.6A
• Power - Output: 50W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-37260-2

封装: 2-Flatpack, Fin Leads, Flanged

IRL6372PBF

Infineon Technologies

MOSFET 2N-CH 30V 8.1A 8SO

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.1A
• Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

BSD223PH6327XTSA1

Infineon Technologies

MOSFET 2P-CH 20V 0.39A SOT363

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 390mA
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
• Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
• Power - Max: 250mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

IDW10G65C5FKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 10A TO247-3

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 400µA @ 650V
• Capacitance @ Vr, F: 300pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3
• Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-3

IRS20957STRPBF

Infineon Technologies

IC AUDIO DRIVER CLASS D 16-SOIC

• Type: Class D
• Output Type: 1-Channel (Mono)
• Max Output Power x Channels @ Load: -
• Voltage - Supply: 10 V ~ 15 V
• Features: Short-Circuit Protection, Shutdown
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 125°C (TA)
• Supplier Device Package: 16-SOIC
• Package / Case: 16-SOIC (0.154", 3.90mm Width)

封装: 16-SOIC (0.154", 3.90mm Width)

BTM7750GXUMA1

Infineon Technologies

IC BRIDGE DRIVER PAR 28DSO

• Output Configuration: Half Bridge (2)
• Applications: DC Motors, General Purpose
• Interface: Logic
• Load Type: Inductive
• Technology: DMOS
• Rds On (Typ): 45 mOhm LS, 70 mOhm HS
• Current - Output / Channel: -
• Current - Peak Output: 12A
• Voltage - Supply: 1.8 V ~ 42 V
• Voltage - Load: 1.8 V ~ 42 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Status Flag
• Fault Protection: Over Temperature, Short Circuit, UVLO
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-28

封装: 28-SOIC (0.295", 7.50mm Width)

C164SM4RFCAKXUMA3

Infineon Technologies

IC MCU 64LQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

CG10150AF

Infineon Technologies

FRAM

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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CY9AF314NPMC-G-MJE1

Infineon Technologies

IC MCU 32BIT 256KB 100LQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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S70KL1282DPBHV023

Infineon Technologies

IC PSRAM 128MBIT PARALLEL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 128Mbit
• Memory Interface: HyperBus
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 36ns
• Access Time: 36 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: PG-BGA-24-801

封装: -

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IRSM515-084DA2-INF

Infineon Technologies

IC HALF BRIDGE DRIVER 4.6A 23DIP

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic, PWM
• Load Type: Inductive, Capacitive, Resistive
• Technology: NMOS
• Rds On (Typ): 340mOhm
• Current - Output / Channel: 4.6A
• Current - Peak Output: 15A
• Voltage - Supply: 13.5V ~ 16.5V
• Voltage - Load: 200V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Through Hole
• Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
• Supplier Device Package: 23-DIPA

封装: -

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IFX27001TFV15ATMA1

Infineon Technologies

IC REG LINEAR FIXED LDO REG

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 1.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): 1.6 mA
• Current - Supply (Max): -
• PSRR: 65dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3-11

封装: -

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IAUCN08S7N013ATMA1

Infineon Technologies

MOSFET_(75V 120V(

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3.2V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 219W (Tc)
• Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-53
• Package / Case: 8-PowerTDFN

封装: -

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2ED2109S06FXUMA1

Infineon Technologies

IC HALF BRIDGE GATE DRIVER 650V

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10V ~ 20V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): 290mA, 700mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 650 V
• Rise / Fall Time (Typ): 100ns, 35ns
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-53

封装: -

CYT2B94CACQ0AZEGS

Infineon Technologies

IC MCU 32BT 2.0625MB FLSH 80LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 63
• Program Memory Size: 2.0625MB (2.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 256K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 52x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-LQFP (12x12)

封装: -

CY95F633KNPMC-G-UNCGE2

Infineon Technologies

IC MCU 8BIT 12KB FLASH 32LQFP

• Core Processor: F²MC-8FX
• Core Size: 8-Bit
• Speed: 16.25MHz
• Connectivity: I2C, LINbus, SIO, UART/USART
• Peripherals: LVD, POR, PWM, WDT
• Number of I/O: 25
• Program Memory Size: 12KB (12K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 512 x 8
• Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
• Data Converters: A/D 8x8/10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-LQFP
• Supplier Device Package: 32-LQFP (7x7)

封装: -

IRFH5053TR2PBF

Infineon Technologies

MOSFET N-CH 100V 9.3A PQFN56

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (5x6) Single Die
• Package / Case: 8-PowerVDFN

封装: -

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S26HS512TGABHV000

Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 512Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 5.45 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

封装: -

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CY9AF144NBBGL-GK9E1

Infineon Technologies

IC MCU 32BIT 288KB FLASH 96FBGA

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
• Peripherals: LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 288KB (288K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 24x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 112-LFBGA
• Supplier Device Package: 112-PFBGA (10x10)

封装: -

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CY8C4149LDAS573XQLA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

封装: -

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S80KS2564GACHV040

Infineon Technologies

IC PSRAM 256MBIT HYPERBUS 49FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 256Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 49-VBGA
• Supplier Device Package: 49-FBGA (8x8)

封装: -