图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
IC DISCRETE
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 150V 50A D2PAK
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封装: - |
库存5,232 |
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MOSFET (Metal Oxide) | 150 V | 50A (Tc) | 8V, 10V | 4V @ 90µA | 31 nC @ 10 V | 1820 pF @ 75 V | ±20V | - | 150W (Tc) | 20mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
库存1,200 |
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MOSFET (Metal Oxide) | 250 V | 93A (Tc) | 10V | 5V @ 250µA | 270 nC @ 10 V | 10880 pF @ 50 V | ±20V | - | 520W (Tc) | 17.5mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-901 | TO-247-3 |
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Infineon Technologies |
TRENCH 40<-<100V
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封装: - |
库存1,284 |
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MOSFET (Metal Oxide) | 60 V | 35A (Ta), 223A (Tc) | 6V, 10V | 3.3V @ 129µA | 162 nC @ 10 V | 7300 pF @ 30 V | ±20V | - | 3.8W (Ta), 188W (Tc) | 1.7mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-U02 | TO-263-7, D2PAK (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 80V 89A TO220-FP
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 89A (Tc) | 6V, 10V | 3.5V @ 270µA | 206 nC @ 10 V | 14200 pF @ 40 V | ±20V | - | 42W (Tc) | 2.8mOhm @ 89A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH BARE DIE
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 4V @ 50µA | 51 nC @ 10 V | 1440 pF @ 25 V | ±20V | - | 110W (Tc) | 22mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-901|DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8SO
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | 1040 pF @ 15 V | ±20V | - | 2.5W (Ta) | 8.5mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRENCH >=100V PG-TDSON-8
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封装: - |
库存16,332 |
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MOSFET (Metal Oxide) | 100 V | 23A (Ta), 192A (Tc) | 8V, 10V | 3.3V @ 116µA | 72.5 nC @ 10 V | 5500 pF @ 50 V | ±20V | - | 3W (Ta), 217W (Tc) | 2.7mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 15A 5X6 PQFN
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 15A (Ta), 44A (Tc) | - | 2.35V @ 25µA | 12 nC @ 4.5 V | 1125 pF @ 15 V | - | - | - | 8.1mOhm @ 15A, 10V | - | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO263-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 4V @ 240µA | 20 nC @ 10 V | 996 pF @ 400 V | ±20V | - | 63W (Tc) | 225mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 75A (Tc) | - | 4V @ 250µA | 100 nC @ 10 V | 3000 pF @ 25 V | - | - | 140W (Tc) | 5.5mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO220-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 3.9V @ 240µA | 31 nC @ 10 V | 570 pF @ 100 V | ±20V | - | 63W (Tc) | 1.3Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
OPTIMOS LOWVOLTAGE POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 21A (Ta), 132A (Tc) | 6V, 10V | 3.3V @ 50µA | 49 nC @ 10 V | 3800 pF @ 30 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-WHSON-8-1 | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 60V 30A TSDSON-8-32
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封装: - |
库存73,965 |
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MOSFET (Metal Oxide) | 60 V | 30A (Tj) | - | 2.2V @ 10µA | 12.2 nC @ 10 V | 888 pF @ 30 V | ±16V | - | 33W (Tc) | 14mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-32 | 8-PowerTDFN |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRENCH 40<-<100V
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封装: - |
库存14,523 |
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MOSFET (Metal Oxide) | 60 V | 42A (Ta), 447A (Tc) | 4.5V, 10V | 2.3V @ 163µA | 202 nC @ 10 V | 14000 pF @ 30 V | ±20V | - | 3W (Ta), 333W (Tc) | 0.86mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-U04 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 900V 36A TO247-3
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封装: - |
库存609 |
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MOSFET (Metal Oxide) | 900 V | 36A (Tc) | 10V | 3.5V @ 2.9mA | 270 nC @ 10 V | 6800 pF @ 100 V | ±20V | - | 417W (Tc) | 120mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-21 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 5.7A TO252-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 5.7A (Tc) | 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | 373 pF @ 100 V | ±20V | - | 48W (Tc) | 750mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH 40<-<100V PG-HSOG-8
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 28A (Ta), 184A (Tc) | 6V, 10V | 3.8V @ 108µA | 87 nC @ 10 V | 6500 pF @ 40 V | ±20V | - | 3.8W (Ta), 167W (Tc) | 2.5mOhm @ 150A 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET
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封装: - |
库存6,126 |
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MOSFET (Metal Oxide) | 80 V | 39A (Ta), 351A (Tc) | 6V, 10V | 3.8V @ 267µA | 255 nC @ 10 V | 12000 pF @ 40 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 1.23mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8 | 8-PowerSFN |
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Infineon Technologies |
MOSFET P-CH 60V 22A TO252-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 22A (Tc) | 10V | 4V @ 1.04mA | 39 nC @ 10 V | 1600 pF @ 30 V | ±20V | - | 83W (Tc) | 65mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 80V 165A HSOG-8
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封装: - |
库存4,122 |
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MOSFET (Metal Oxide) | 80 V | 165A (Tc) | 6V, 10V | 3.8V @ 108µA | 90 nC @ 10 V | 6370 pF @ 40 V | ±20V | - | 167W (Tc) | 2.9mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 42A (Tc) | - | 4V @ 250µA | 44 nC @ 10 V | 1380 pF @ 25 V | - | - | - | 14.5mOhm @ 36A, 10V | - | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
HIGH POWER_NEW
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 4.5V @ 420µA | 36 nC @ 10 V | 1694 pF @ 400 V | ±20V | - | 98W (Tc) | 125mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH 40<-<100V
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封装: - |
库存1,773 |
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MOSFET (Metal Oxide) | 80 V | 35A (Ta), 196A (Tc) | 6V, 10V | 3.8V @ 267µA | 255 nC @ 10 V | 12000 pF @ 40 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 1.6mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET 55V 17A DIE
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 17A | 10V | - | - | - | - | - | - | 65mOhm @ 17A, 10V | - | Surface Mount | Die | Die |
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Infineon Technologies |
IC DISCRETE
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封装: - |
Request a Quote |
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