页 36 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

SPW11N60C3FKSA1

Infineon Technologies

MOSFET N-CH 650V 11A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

650 V

11A (Tc)

10V

3.9V @ 500µA

60 nC @ 10 V

1200 pF @ 25 V

±20V

-

125W (Tc)

380mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IMZA75R020M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

封装: -

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-

Through Hole

PG-TO247-4

TO-247-4

IRFH5207TR2PBF

Infineon Technologies

MOSFET N-CH 75V 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2474 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 43A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerVDFN

封装: -

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MOSFET (Metal Oxide)

75 V

13A (Ta), 71A (Tc)

-

4V @ 100µA

59 nC @ 10 V

2474 pF @ 25 V

-

9.6mOhm @ 43A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerVDFN

IPDQ65R099CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 186W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

封装: -

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MOSFET (Metal Oxide)

650 V

29A (Tc)

10V

4.5V @ 480µA

39 nC @ 10 V

1942 pF @ 400 V

±20V

-

186W (Tc)

99mOhm @ 9.7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

IPQC60R017S7XTMA1

Infineon Technologies

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22
Package / Case: 22-PowerBSOP Module

封装: -

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MOSFET (Metal Oxide)

600 V

30A (Tc)

12V

4.5V @ 1.89mA

196 nC @ 12 V

7370 pF @ 300 V

±20V

-

500W (Tc)

17mOhm @ 29A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22

22-PowerBSOP Module

IPDQ65R029CFD7AXTMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 463W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

封装: -

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MOSFET (Metal Oxide)

650 V

85A (Tc)

10V

4.5V @ 1.79mA

139 nC @ 10 V

7149 pF @ 400 V

±20V

-

463W (Tc)

29mOhm @ 35.8A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

IAUC60N06S5N074ATMA1

Infineon Technologies

MOSFET_)40V 60V) PG-TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 19µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-33
Package / Case: 8-PowerTDFN

封装: -

库存14,352

MOSFET (Metal Oxide)

60 V

60A (Tj)

7V, 10V

3.4V @ 19µA

20 nC @ 10 V

1461 pF @ 30 V

±20V

-

52W (Tc)

7.4mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-33

8-PowerTDFN

ISP13DP06NMSATMA1

Infineon Technologies

MOSFET P-CH 60V SOT223

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223
Package / Case: TO-261-4, TO-261AA

封装: -

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MOSFET (Metal Oxide)

60 V

2.8A (Ta)

-

±20V

-

Surface Mount

PG-SOT223

TO-261-4, TO-261AA

IRFB3006PBFXKMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

60 V

195A (Tc)

10V

4V @ 250µA

300 nC @ 10 V

8970 pF @ 50 V

±20V

-

375W (Tc)

2.5mOhm @ 170A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IPB110P06LMATMA1

Infineon Technologies

MOSFET P-CH 60V 100A TO263-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存4,686

MOSFET (Metal Oxide)

60 V

100A (Tc)

4.5V, 10V

2V @ 5.55mA

281 nC @ 10 V

8500 pF @ 30 V

±20V

-

300W (Tc)

11mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

BSS169IXTSA1

Infineon Technologies

MOSFET N-CH 100V 190MA SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

库存16,404

MOSFET (Metal Oxide)

100 V

190mA (Ta)

0V, 10V

1.8V @ 50µA

2.1 nC @ 7 V

51 pF @ 25 V

±20V

Depletion Mode

360mW (Ta)

2.9Ohm @ 190mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT-23-3

TO-236-3, SC-59, SOT-23-3

IPAN70R750P7SXKSA1

Infineon Technologies

MOSFET N-CH 700V 6.5A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: -

库存423

MOSFET (Metal Oxide)

700 V

6.5A (Tc)

10V

3.5V @ 70µA

8.3 nC @ 10 V

306 pF @ 400 V

±16V

-

20.8W (Tc)

750mOhm @ 1.4A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPDQ65R080CFD7AXTMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 223W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

封装: -

库存1,500

MOSFET (Metal Oxide)

650 V

36A (Tc)

10V

4.5V @ 630µA

50 nC @ 10 V

2513 pF @ 400 V

±20V

-

223W (Tc)

80mOhm @ 12.5A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

FF2000XTR17IE5BPSA1

Infineon Technologies

PP IHM I

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存6

-

IAUC120N06S5N011ATMA1

Infineon Technologies

MOSFET_)40V 60V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9822 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-53
Package / Case: 8-PowerTDFN

封装: -

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MOSFET (Metal Oxide)

60 V

310A (Tj)

7V, 10V

3.4V @ 130µA

137 nC @ 10 V

9822 pF @ 30 V

±20V

-

188W (Tc)

1.12mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-53

8-PowerTDFN

IPDQ65R029CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 463W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

封装: -

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MOSFET (Metal Oxide)

650 V

85A (Tc)

10V

4.5V @ 1.79mA

139 nC @ 10 V

7149 pF @ 400 V

±20V

-

463W (Tc)

29mOhm @ 35.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

IMBG120R078M2HXTMA1

Infineon Technologies

SIC DISCRETE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存2,949

-

ISZ143N13NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

IRF7416TRPBF-1

Infineon Technologies

MOSFET P-CH 30V 10A 8SO

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.04V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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MOSFET (Metal Oxide)

30 V

10A (Ta)

-

2.04V @ 250µA

92 nC @ 10 V

1700 pF @ 25 V

±20V

-

2.5W (Ta)

20mOhm @ 5.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

IPT013N08NM5LFATMA1

Infineon Technologies

TRENCH 40<-<100V PG-HSOF-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8
Package / Case: 8-PowerSFN

封装: -

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MOSFET (Metal Oxide)

80 V

333A (Tc)

10V

4.1V @ 250µA

158 nC @ 10 V

820 pF @ 40 V

±20V

-

278W (Tc)

1.3mOhm @ 150A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8

8-PowerSFN

IQE050N08NM5SCATMA1

Infineon Technologies

OPTIMOS LOWVOLTAGE POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WHSON-8-1
Package / Case: 8-PowerWDFN

封装: -

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MOSFET (Metal Oxide)

80 V

16A (Ta), 99A (Tc)

6V, 10V

3.8V @ 49µA

44 nC @ 10 V

2900 pF @ 40 V

±20V

-

2.5W (Ta), 100W (Tc)

5mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-WHSON-8-1

8-PowerWDFN

IPL60R160CFD7AUMA1

Infineon Technologies

MOSFET N CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4-1
Package / Case: 4-PowerTSFN

封装: -

库存9,147

MOSFET (Metal Oxide)

600 V

16A (Tc)

10V

4.5V @ 340µA

31 nC @ 10 V

1330 pF @ 400 V

±20V

-

95W (Tc)

160mOhm @ 6.8A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4-1

4-PowerTSFN

94-2300PBF

Infineon Technologies

IC MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

IPL65R210CFDAUMA2

Infineon Technologies

MOSFET N-CH 650V 16.6A 4VSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.3A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN

封装: -

Request a Quote

MOSFET (Metal Oxide)

650 V

16.6A (Tc)

10V

4.5V @ 700µA

68 nC @ 10 V

1850 pF @ 100 V

±20V

-

151W (Tc)

210mOhm @ 7.3A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4

4-PowerTSFN

IRFC5305B

Infineon Technologies

MOSFET 55V 31A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 31A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 60mOhm @ 31A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: -

Request a Quote

MOSFET (Metal Oxide)

55 V

31A

10V

-

60mOhm @ 31A, 10V

-

Surface Mount

Die

BSZ0704LSATMA1

Infineon Technologies

MOSFET N-CH 60V 11A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

封装: -

Request a Quote

MOSFET (Metal Oxide)

60 V

11A (Ta), 40A (Tc)

4.5V, 10V

2.3V @ 14µA

8.6 nC @ 4.5 V

1300 pF @ 30 V

±20V

-

2.1W (Ta), 36W (Tc)

9.9mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IPP230N06L3GXKSA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 30A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 36W
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封装: -

Request a Quote

MOSFET (Metal Oxide)

60 V

30A

4.5V, 10V

2.2V @ 11µA

7 nC @ 4.5 V

1200 pF @ 30 V

±20V

-

36W

23mOhm @ 30A, 10V

-55°C ~ 175°C

Through Hole

PG-TO220-3

TO-220-3

IMBG65R050M2HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存1,482

-

IPW60R045P7XKSA1

Infineon Technologies

MOSFET N-CH 650V 61A TO247-3-41

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.08mA
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 201W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package / Case: TO-247-3

封装: -

Request a Quote

MOSFET (Metal Oxide)

650 V

61A (Tc)

10V

4V @ 1.08mA

90 nC @ 10 V

3891 pF @ 400 V

±20V

-

201W (Tc)

45mOhm @ 22.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-41

TO-247-3

IGLR60R190D1XUMA1

Infineon Technologies

GAN HV

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 55.5W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-6
Package / Case: 8-PowerTDFN

封装: -

库存12,318

GaNFET (Gallium Nitride)

600 V

12.8A (Tc)

-

1.6V @ 960µA

-

157 pF @ 400 V

-10V

-

55.5W (Tc)

-

-40°C ~ 150°C (TJ)

Surface Mount

PG-TSON-8-6

8-PowerTDFN

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPW11N60C3FKSA1	Infineon Technologies	MOSFET N-CH 650V 11A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	3.9V @ 500µA	60 nC @ 10 V	1200 pF @ 25 V	±20V	-	125W (Tc)	380mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IMZA75R020M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	PG-TO247-4	TO-247-4
IRFH5207TR2PBF	Infineon Technologies	MOSFET N-CH 75V 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2474 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9.6mOhm @ 43A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	75 V	13A (Ta), 71A (Tc)	-	4V @ 100µA	59 nC @ 10 V	2474 pF @ 25 V	-	-	-	9.6mOhm @ 43A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
IPDQ65R099CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 480µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 186W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	29A (Tc)	10V	4.5V @ 480µA	39 nC @ 10 V	1942 pF @ 400 V	±20V	-	186W (Tc)	99mOhm @ 9.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IPQC60R017S7XTMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 1.89mA Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22 Package / Case: 22-PowerBSOP Module	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	30A (Tc)	12V	4.5V @ 1.89mA	196 nC @ 12 V	7370 pF @ 300 V	±20V	-	500W (Tc)	17mOhm @ 29A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
IPDQ65R029CFD7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 463W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	85A (Tc)	10V	4.5V @ 1.79mA	139 nC @ 10 V	7149 pF @ 400 V	±20V	-	463W (Tc)	29mOhm @ 35.8A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IAUC60N06S5N074ATMA1	Infineon Technologies	MOSFET_)40V 60V) PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 19µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	封装: -	库存14,352	MOSFET (Metal Oxide)	60 V	60A (Tj)	7V, 10V	3.4V @ 19µA	20 nC @ 10 V	1461 pF @ 30 V	±20V	-	52W (Tc)	7.4mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
ISP13DP06NMSATMA1	Infineon Technologies	MOSFET P-CH 60V SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	2.8A (Ta)	-	-	-	-	±20V	-	-	-	-	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
IRFB3006PBFXKMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	195A (Tc)	10V	4V @ 250µA	300 nC @ 10 V	8970 pF @ 50 V	±20V	-	375W (Tc)	2.5mOhm @ 170A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB110P06LMATMA1	Infineon Technologies	MOSFET P-CH 60V 100A TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 5.55mA Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存4,686	MOSFET (Metal Oxide)	60 V	100A (Tc)	4.5V, 10V	2V @ 5.55mA	281 nC @ 10 V	8500 pF @ 30 V	±20V	-	300W (Tc)	11mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSS169IXTSA1	Infineon Technologies	MOSFET N-CH 100V 190MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1.8V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	封装: -	库存16,404	MOSFET (Metal Oxide)	100 V	190mA (Ta)	0V, 10V	1.8V @ 50µA	2.1 nC @ 7 V	51 pF @ 25 V	±20V	Depletion Mode	360mW (Ta)	2.9Ohm @ 190mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT-23-3	TO-236-3, SC-59, SOT-23-3
IPAN70R750P7SXKSA1	Infineon Technologies	MOSFET N-CH 700V 6.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 20.8W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封装: -	库存423	MOSFET (Metal Oxide)	700 V	6.5A (Tc)	10V	3.5V @ 70µA	8.3 nC @ 10 V	306 pF @ 400 V	±16V	-	20.8W (Tc)	750mOhm @ 1.4A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPDQ65R080CFD7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 223W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	封装: -	库存1,500	MOSFET (Metal Oxide)	650 V	36A (Tc)	10V	4.5V @ 630µA	50 nC @ 10 V	2513 pF @ 400 V	±20V	-	223W (Tc)	80mOhm @ 12.5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
FF2000XTR17IE5BPSA1	Infineon Technologies	PP IHM I FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存6	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IAUC120N06S5N011ATMA1	Infineon Technologies	MOSFET_)40V 60V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 310A (Tj) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9822 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 1.12mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-53 Package / Case: 8-PowerTDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	310A (Tj)	7V, 10V	3.4V @ 130µA	137 nC @ 10 V	9822 pF @ 30 V	±20V	-	188W (Tc)	1.12mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-53	8-PowerTDFN
IPDQ65R029CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 463W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	85A (Tc)	10V	4.5V @ 1.79mA	139 nC @ 10 V	7149 pF @ 400 V	±20V	-	463W (Tc)	29mOhm @ 35.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IMBG120R078M2HXTMA1	Infineon Technologies	SIC DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存2,949	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISZ143N13NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF7416TRPBF-1	Infineon Technologies	MOSFET P-CH 30V 10A 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.04V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta)	-	2.04V @ 250µA	92 nC @ 10 V	1700 pF @ 25 V	±20V	-	2.5W (Ta)	20mOhm @ 5.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IPT013N08NM5LFATMA1	Infineon Technologies	TRENCH 40<-<100V PG-HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 333A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	80 V	333A (Tc)	10V	4.1V @ 250µA	158 nC @ 10 V	820 pF @ 40 V	±20V	-	278W (Tc)	1.3mOhm @ 150A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IQE050N08NM5SCATMA1	Infineon Technologies	OPTIMOS LOWVOLTAGE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WHSON-8-1 Package / Case: 8-PowerWDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	80 V	16A (Ta), 99A (Tc)	6V, 10V	3.8V @ 49µA	44 nC @ 10 V	2900 pF @ 40 V	±20V	-	2.5W (Ta), 100W (Tc)	5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WHSON-8-1	8-PowerWDFN
IPL60R160CFD7AUMA1	Infineon Technologies	MOSFET N CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4-1 Package / Case: 4-PowerTSFN	封装: -	库存9,147	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	4.5V @ 340µA	31 nC @ 10 V	1330 pF @ 400 V	±20V	-	95W (Tc)	160mOhm @ 6.8A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4-1	4-PowerTSFN
94-2300PBF	Infineon Technologies	IC MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPL65R210CFDAUMA2	Infineon Technologies	MOSFET N-CH 650V 16.6A 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	16.6A (Tc)	10V	4.5V @ 700µA	68 nC @ 10 V	1850 pF @ 100 V	±20V	-	151W (Tc)	210mOhm @ 7.3A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IRFC5305B	Infineon Technologies	MOSFET 55V 31A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 31A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 60mOhm @ 31A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: -	Request a Quote	MOSFET (Metal Oxide)	55 V	31A	10V	-	-	-	-	-	-	60mOhm @ 31A, 10V	-	Surface Mount	Die	Die
BSZ0704LSATMA1	Infineon Technologies	MOSFET N-CH 60V 11A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	11A (Ta), 40A (Tc)	4.5V, 10V	2.3V @ 14µA	8.6 nC @ 4.5 V	1300 pF @ 30 V	±20V	-	2.1W (Ta), 36W (Tc)	9.9mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IPP230N06L3GXKSA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 30A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	30A	4.5V, 10V	2.2V @ 11µA	7 nC @ 4.5 V	1200 pF @ 30 V	±20V	-	36W	23mOhm @ 30A, 10V	-55°C ~ 175°C	Through Hole	PG-TO220-3	TO-220-3
IMBG65R050M2HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存1,482	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW60R045P7XKSA1	Infineon Technologies	MOSFET N-CH 650V 61A TO247-3-41 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.08mA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 201W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	61A (Tc)	10V	4V @ 1.08mA	90 nC @ 10 V	3891 pF @ 400 V	±20V	-	201W (Tc)	45mOhm @ 22.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
IGLR60R190D1XUMA1	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 960µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 55.5W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-6 Package / Case: 8-PowerTDFN	封装: -	库存12,318	GaNFET (Gallium Nitride)	600 V	12.8A (Tc)	-	1.6V @ 960µA	-	157 pF @ 400 V	-10V	-	55.5W (Tc)	-	-40°C ~ 150°C (TJ)	Surface Mount	PG-TSON-8-6	8-PowerTDFN