Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFC9140NB
Infineon Technologies

MOSFET 100V 23A DIE

  • FET Type: -
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 23A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 117mOhm @ 23A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
封装: -
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MOSFET (Metal Oxide)
100 V
23A
10V
-
-
-
-
-
-
117mOhm @ 23A, 10V
-
Surface Mount
Die
Die
IMBG120R030M1HXTMA1
Infineon Technologies

SICFET N-CH 1.2KV 56A TO263

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.7V @ 11.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 800 V
  • Vgs (Max): +18V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封装: -
库存2,892
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
-
5.7V @ 11.5mA
63 nC @ 18 V
2290 pF @ 800 V
+18V, -15V
-
300W (Tc)
41mOhm @ 25A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPA65R600E6XKSA1
Infineon Technologies

MOSFET N-CH 650V 7.3A TO220-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 210µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
封装: -
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MOSFET (Metal Oxide)
650 V
7.3A (Tc)
10V
3.5V @ 210µA
23 nC @ 10 V
440 pF @ 100 V
±20V
-
28W (Tc)
600mOhm @ 2.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IAUA220N08S5N021AUMA1
Infineon Technologies

MOSFET_(75V 120V( PG-HSOF-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 211W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-5-4
  • Package / Case: 5-PowerSFN
封装: -
库存8,910
MOSFET (Metal Oxide)
80 V
220A (Tj)
6V, 10V
3.8V @ 120µA
105 nC @ 10 V
7219 pF @ 40 V
±20V
-
211W (Tc)
2.1mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-5-4
5-PowerSFN
IMBG120R045M1HXTMA1
Infineon Technologies

SICFET N-CH 1.2KV 47A TO263

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1527 pF @ 800 V
  • Vgs (Max): +18V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 63mOhm @ 16A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封装: -
库存1,704
SiCFET (Silicon Carbide)
1200 V
47A (Tc)
-
5.7V @ 7.5mA
46 nC @ 18 V
1527 pF @ 800 V
+18V, -15V
-
227W (Tc)
63mOhm @ 16A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R220M1HXTMA1
Infineon Technologies

SICFET N-CH 1.2KV 13A TO263

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
  • Vgs (Max): +18V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封装: -
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SiCFET (Silicon Carbide)
1200 V
13A (Tc)
-
5.7V @ 1.6mA
9.4 nC @ 18 V
312 pF @ 800 V
+18V, -15V
-
83W (Tc)
294mOhm @ 4A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPP70N12S311AKSA2
Infineon Technologies

MOSFET_(120V 300V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封装: -
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MOSFET (Metal Oxide)
120 V
70A (Tc)
10V
4V @ 83µA
65 nC @ 10 V
4355 pF @ 25 V
±20V
-
125W (Tc)
11.6mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPDQ65R125CFD7AXTMA1
Infineon Technologies

AUTOMOTIVE_COOLMOS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 390µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22-1
  • Package / Case: 22-PowerBSOP Module
封装: -
库存1,500
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
4.5V @ 390µA
32 nC @ 10 V
1566 pF @ 400 V
±20V
-
160W (Tc)
125mOhm @ 7.8A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
BSC889N03MSG
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
30 V
12A (Ta), 44A (Tc)
4.5V, 10V
2V @ 250µA
20 nC @ 10 V
1500 pF @ 15 V
±20V
-
2.5W (Ta), 28W (Tc)
9.1mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
IRFP4468PBFXKMA1
Infineon Technologies

TRENCH >=100V PG-TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 290A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19860 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
封装: -
库存1,149
MOSFET (Metal Oxide)
100 V
290A (Tc)
10V
4V @ 250µA
540 nC @ 10 V
19860 pF @ 50 V
±20V
-
520W (Tc)
2.6mOhm @ 180A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
IPTG018N08NM5ATMA1
Infineon Technologies

TRENCH 40<-<100V PG-HSOG-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 253A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 159µA
  • Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOG-8-1
  • Package / Case: 8-PowerSMD, Gull Wing
封装: -
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MOSFET (Metal Oxide)
80 V
32A (Ta), 253A (Tc)
6V, 10V
3.8V @ 159µA
127 nC @ 10 V
9200 pF @ 40 V
±20V
-
3.8W (Ta), 231W (Tc)
1.8mOhm @ 150A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOG-8-1
8-PowerSMD, Gull Wing
IRFH7936TR2PBF
Infineon Technologies

MOSFET N-CH 30V 20A PQFN56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.35V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
20A (Ta), 54A (Tc)
-
2.35V @ 50µA
26 nC @ 4.5 V
2360 pF @ 15 V
-
-
-
4.8mOhm @ 20A, 10V
-
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
IPT008N06NM5LFATMA1
Infineon Technologies

TRENCH 40<-<100V PG-HSOF-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 454A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8
  • Package / Case: 8-PowerSFN
封装: -
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MOSFET (Metal Oxide)
60 V
454A (Tc)
10V
3.6V @ 250µA
185 nC @ 10 V
980 pF @ 30 V
±20V
-
278W (Tc)
0.8mOhm @ 150A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8
8-PowerSFN
IAUT165N08S5N029ATMA1
Infineon Technologies

MOSFET N-CH 80V 165A 8HSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 108µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
封装: -
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MOSFET (Metal Oxide)
80 V
165A (Tc)
6V, 10V
3.8V @ 108µA
90 nC @ 10 V
6370 pF @ 40 V
±20V
-
167W (Tc)
2.9mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
IRLL2705TR
Infineon Technologies

MOSFET N-CH 55V 3.8A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封装: -
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MOSFET (Metal Oxide)
55 V
3.8A (Ta)
-
2V @ 250µA
48 nC @ 10 V
870 pF @ 25 V
-
-
-
40mOhm @ 3.8A, 10V
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
IMZA120R007M1HXKSA1
Infineon Technologies

SIC DISCRETE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.2V @ 47mA
  • Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9170 nF @ 25 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 750W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-8
  • Package / Case: TO-247-4
封装: -
库存231
SiCFET (Silicon Carbide)
1200 V
225A (Tc)
15V, 18V
5.2V @ 47mA
220 nC @ 18 V
9170 nF @ 25 V
+20V, -5V
-
750W (Tc)
9.9mOhm @ 108A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-8
TO-247-4
IRF7832TR
Infineon Technologies

MOSFET N-CH 30V 20A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.32V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
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MOSFET (Metal Oxide)
30 V
20A (Ta)
-
2.32V @ 250µA
51 nC @ 4.5 V
4310 pF @ 15 V
-
-
-
4mOhm @ 20A, 10V
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IPTG014N10NM5ATMA1
Infineon Technologies

MOSFET N-CH 100V 37A/366A HSOG-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOG-8-1
  • Package / Case: 8-PowerSMD, Gull Wing
封装: -
库存2,289
MOSFET (Metal Oxide)
100 V
37A (Ta), 366A (Tc)
6V, 10V
3.8V @ 280µA
211 nC @ 10 V
16000 pF @ 50 V
±20V
-
3.8W (Ta), 375W (Tc)
1.4mOhm @ 150A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOG-8-1
8-PowerSMD, Gull Wing
BSC010NE2LSIATMA1
Infineon Technologies

MOSFET N-CH 25V 38A/100A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 12 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-7
  • Package / Case: 8-PowerTDFN
封装: -
库存57,168
MOSFET (Metal Oxide)
25 V
38A (Ta), 100A (Tc)
4.5V, 10V
2V @ 250µA
59 nC @ 10 V
4200 pF @ 12 V
±20V
-
2.5W (Ta), 96W (Tc)
1.05mOhm @ 30A, 10V
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
IPC95R1K2P7X7SA1
Infineon Technologies

MOSFET N-CH BARE DIE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IAUS300N08S5N014ATMA1
Infineon Technologies

MOSFET N-CH 80V 300A HSOG-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOG-8-1
  • Package / Case: 8-PowerSMD, Gull Wing
封装: -
库存5,400
MOSFET (Metal Oxide)
80 V
300A (Tc)
6V, 10V
3.8V @ 230µA
187 nC @ 10 V
13178 pF @ 40 V
±20V
-
300W (Tc)
1.4mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOG-8-1
8-PowerSMD, Gull Wing
IPD60R600CP
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 220µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
6.1A (Tc)
10V
3.5V @ 220µA
27 nC @ 10 V
550 pF @ 100 V
±20V
-
60W (Tc)
600mOhm @ 3.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFH5053TRPBFXUMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPB042N10NF2SATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPD50R380CEBTMA1
Infineon Technologies

MOSFET N-CH 500V 14.1A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
14.1A (Tc)
13V
3.5V @ 260µA
24.8 nC @ 10 V
584 pF @ 100 V
±20V
-
73W (Tc)
380mOhm @ 3.2A, 13V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
IGO60R042D1AUMA2
Infineon Technologies

GAN HV

  • FET Type: -
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-20-85
  • Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
封装: -
Request a Quote
GaNFET (Gallium Nitride)
600 V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-DSO-20-85
20-PowerSOIC (0.433", 11.00mm Width)
IMW120R020M1HXKSA1
Infineon Technologies

SIC DISCRETE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.2V @ 17.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3460 nF @ 25 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
封装: -
库存777
SiCFET (Silicon Carbide)
1200 V
98A (Tc)
15V, 18V
5.2V @ 17.6mA
83 nC @ 18 V
3460 nF @ 25 V
+20V, -5V
-
375W (Tc)
26.9mOhm @ 41A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
IRFC9130NB
Infineon Technologies

MOSFET 100V 14A DIE

  • FET Type: -
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 14A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
14A
10V
-
-
-
-
-
-
200mOhm @ 14A, 10V
-
Surface Mount
Die
Die
IPD25DP06NMATMA1
Infineon Technologies

MOSFET P-CH 60V 6.5A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存6,774
MOSFET (Metal Oxide)
60 V
6.5A (Tc)
10V
4V @ 270µA
10.6 nC @ 10 V
420 pF @ 30 V
±20V
-
28W (Tc)
250mOhm @ 6.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPW80R290C3AXKSA1
Infineon Technologies

MOSFET N-CH 800V 17A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
封装: -
库存648
MOSFET (Metal Oxide)
800 V
17A (Tc)
10V
3.9V @ 1mA
117 nC @ 10 V
2300 pF @ 100 V
±20V
-
227W (Tc)
290mOhm @ 11A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3