页 38 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

BTS114AE3045ANTMA1

Infineon Technologies

POWER FIELD-EFFECT TRANSISTOR, 1

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TO220-3-5
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

Request a Quote

-

Surface Mount

PG-TO220-3-5

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPQC60T010S7AXTMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

ISP25DP06LMXTSA1

Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223-4

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA

封装: -

库存3,861

MOSFET (Metal Oxide)

60 V

1.9A (Ta)

4.5V, 10V

2V @ 270µA

13.9 nC @ 10 V

420 pF @ 30 V

±20V

-

1.8W (Ta), 5W (Tc)

250mOhm @ 1.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT223-4

TO-261-4, TO-261AA

BSC007N04LS6ATMA1

Infineon Technologies

MOSFET N-CH 40V 100A TDSON-8-6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 381A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 188W
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

封装: -

库存14,031

MOSFET (Metal Oxide)

40 V

381A (Tc)

4.5V, 10V

2.3V @ 250µA

94 nC @ 4.5 V

8400 pF @ 20 V

±20V

-

188W

0.7mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-6

8-PowerTDFN

IQE004NE1LM7CGATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 15 V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs(th) (Max) @ Id: 2V @ 432µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Vgs (Max): ±7V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TTFN-9-3
Package / Case: 9-PowerTDFN

封装: -

库存29,940

MOSFET (Metal Oxide)

15 V

58A (Ta), 379A (Tc)

4.5V, 7V

2V @ 432µA

55 nC @ 7 V

6240 pF @ 7.5 V

±7V

-

2.1W (Ta), 89W (Tc)

0.45mOhm @ 30A, 7V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TTFN-9-3

9-PowerTDFN

IQD009N06NM5CGATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TTFN-9-U02
Package / Case: 9-PowerTDFN

封装: -

Request a Quote

MOSFET (Metal Oxide)

60 V

42A (Ta), 445A (Tc)

6V, 10V

3.3V @ 163µA

150 nC @ 10 V

12000 pF @ 30 V

±20V

-

3W (Ta), 333W (Tc)

0.9mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TTFN-9-U02

9-PowerTDFN

IPD50P04P413AUMA2

Infineon Technologies

MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

Request a Quote

MOSFET (Metal Oxide)

40 V

50A (Tc)

10V

4V @ 85µA

51 nC @ 10 V

3670 pF @ 25 V

±20V

-

58W (Tc)

12.6mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

IMZA75R027M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

封装: -

Request a Quote

-

Through Hole

PG-TO247-4

TO-247-4

IPB65R090CFD7ATMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存8,550

MOSFET (Metal Oxide)

650 V

25A (Tc)

10V

4.5V @ 630µA

53 nC @ 10 V

2513 pF @ 400 V

±20V

-

127W (Tc)

90mOhm @ 12.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IAUCN04S6N007TATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存3,300

-

IQE030N06NM5CGSCATMA1

Infineon Technologies

OPTIMOS LOWVOLTAGE POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WHTFN-9-1
Package / Case: 9-PowerWDFN

封装: -

Request a Quote

MOSFET (Metal Oxide)

60 V

21A (Ta), 132A (Tc)

6V, 10V

3.3V @ 50µA

49 nC @ 10 V

3800 pF @ 30 V

±20V

-

2.5W (Ta), 100W (Tc)

3mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-WHTFN-9-1

9-PowerWDFN

BSZ130N03LSGATMA1

Infineon Technologies

MOSFET N-CH 30V 10A/35A 8TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

封装: -

库存86,457

MOSFET (Metal Oxide)

30 V

10A (Ta), 35A (Tc)

4.5V, 10V

2.2V @ 250µA

13 nC @ 10 V

970 pF @ 15 V

±20V

-

2.1W (Ta), 25W (Tc)

13mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8

8-PowerTDFN

IPN70R450P7SATMA1

Infineon Technologies

MOSFET N-CH 700V 10A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 7.1W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223
Package / Case: TO-261-4, TO-261AA

封装: -

库存2,232

MOSFET (Metal Oxide)

700 V

10A (Tc)

10V

3.5V @ 120µA

13.1 nC @ 10 V

424 pF @ 400 V

±16V

-

7.1W (Tc)

450mOhm @ 2.3A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-SOT223

TO-261-4, TO-261AA

BSC16DN25NS3GATMA1

Infineon Technologies

MOSFET N-CH 250V 10.9A TDSON-8-5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 32µA
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-5
Package / Case: 8-PowerTDFN

封装: -

库存20,946

MOSFET (Metal Oxide)

250 V

10.9A (Tc)

10V

4V @ 32µA

11.4 nC @ 10 V

920 pF @ 100 V

±20V

-

62.5W (Tc)

165mOhm @ 5.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-5

8-PowerTDFN

IPP600N25N3GXKSA1

Infineon Technologies

MOSFET N-CH 250V 25A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

库存1,902

MOSFET (Metal Oxide)

250 V

25A (Tc)

10V

4V @ 90µA

29 nC @ 10 V

2350 pF @ 100 V

±20V

-

136W (Tc)

60mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPA90R1K0C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 5.7A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: -

Request a Quote

MOSFET (Metal Oxide)

900 V

5.7A (Tc)

10V

3.5V @ 370µA

34 nC @ 10 V

850 pF @ 100 V

±20V

-

32W (Tc)

1Ohm @ 3.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

AUIRFR5305TR

Infineon Technologies

MOSFET P-CH 55V 31A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存5,199

MOSFET (Metal Oxide)

55 V

31A (Tc)

-

4V @ 250µA

63 nC @ 10 V

1200 pF @ 25 V

-

65mOhm @ 16A, 10V

-

Surface Mount

TO-252AA (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPB600N25N3GATMA1

Infineon Technologies

MOSFET N-CH 250V 25A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存14,874

MOSFET (Metal Oxide)

250 V

25A (Tc)

10V

4V @ 90µA

29 nC @ 10 V

2350 pF @ 100 V

±20V

-

136W (Tc)

60mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IQD020N10NM5CGATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TTFN-9-U02
Package / Case: 9-PowerTDFN

封装: -

库存15,000

MOSFET (Metal Oxide)

100 V

26A (Ta), 273A (Tc)

6V, 10V

3.8V @ 159µA

134 nC @ 10 V

9500 pF @ 50 V

±20V

-

3W (Ta), 333W (Tc)

2.05mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TTFN-9-U02

9-PowerTDFN

IPD60R1K0PFD7SAUMA1

Infineon Technologies

CONSUMER PG-TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存1,284

MOSFET (Metal Oxide)

600 V

4.7A (Tc)

10V

4.5V @ 50µA

6 nC @ 10 V

230 pF @ 400 V

±20V

-

26W (Tc)

1Ohm @ 1A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPD50R650CEBTMA1

Infineon Technologies

MOSFET N-CH 500V 6.1A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

Request a Quote

MOSFET (Metal Oxide)

500 V

6.1A (Tc)

13V

3.5V @ 150µA

15 nC @ 10 V

342 pF @ 100 V

±20V

-

47W (Tc)

650mOhm @ 1.8A, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IAUZ40N06S5N050ATMA1

Infineon Technologies

MOSFET N-CH 60V 40A TSDSON-8-33

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-33
Package / Case: 8-PowerTDFN

封装: -

库存30,855

MOSFET (Metal Oxide)

60 V

40A (Tj)

-

3.4V @ 29µA

30.5 nC @ 10 V

2200 pF @ 30 V

±20V

-

71W (Tc)

5mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSDSON-8-33

8-PowerTDFN

IPL60R385CPAUMA1

Infineon Technologies

MOSFET N-CH 600V 9A 4VSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN

封装: -

Request a Quote

MOSFET (Metal Oxide)

600 V

9A (Tc)

10V

3.5V @ 340µA

17 nC @ 10 V

790 pF @ 100 V

±20V

-

83W (Tc)

385mOhm @ 5.2A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4

4-PowerTSFN

IRLH5036TR2PBF

Infineon Technologies

MOSFET N-CH 60V 100A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerVDFN

封装: -

Request a Quote

MOSFET (Metal Oxide)

60 V

20A (Ta), 100A (Tc)

-

2.5V @ 150µA

90 nC @ 10 V

5360 pF @ 25 V

-

4.4mOhm @ 50A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerVDFN

IRF7465TRPBFXTMA1

Infineon Technologies

PLANAR 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

Request a Quote

MOSFET (Metal Oxide)

150 V

1.9A (Ta)

10V

5.5V @ 250µA

15 nC @ 10 V

330 pF @ 25 V

±30V

-

2.5W (Ta)

280mOhm @ 1.14A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

IRFH5301TR2PBF

Infineon Technologies

MOSFET N-CH 30V 35A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6) Single Die
Package / Case: 8-PowerVDFN

封装: -

Request a Quote

MOSFET (Metal Oxide)

30 V

35A (Ta), 100A (Tc)

-

2.35V @ 100µA

77 nC @ 10 V

5114 pF @ 15 V

-

1.85mOhm @ 50A, 10V

-

Surface Mount

PQFN (5x6) Single Die

8-PowerVDFN

IPP073N13NM6AKSA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

AIMBG120R060M1XTMA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封装: -

Request a Quote

SiC (Silicon Carbide Junction Transistor)

1200 V

38A (Tc)

18V, 20V

5.1V @ 4.3mA

32 nC @ 20 V

880 pF @ 800 V

+23V, -5V

-

202W (Tc)

75mOhm @ 13A, 20V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

BSZ036NE2LSATMA1

Infineon Technologies

MOSFET N-CH 25V 16A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

封装: -

库存191,511

MOSFET (Metal Oxide)

25 V

16A (Ta), 40A (Tc)

4.5V, 10V

2V @ 250µA

16 nC @ 10 V

1200 pF @ 12 V

±20V

-

2.1W (Ta), 37W (Tc)

3.6mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8-FL

8-PowerTDFN

IPP114N03LGHKSA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

Request a Quote

MOSFET (Metal Oxide)

30 V

30A (Tc)

4.5V, 10V

2.2V @ 250µA

14 nC @ 10 V

1500 pF @ 15 V

±20V

-

38W (Tc)

11.4mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BTS114AE3045ANTMA1	Infineon Technologies	POWER FIELD-EFFECT TRANSISTOR, 1 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TO220-3-5 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TO220-3-5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPQC60T010S7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISP25DP06LMXTSA1	Infineon Technologies	MOSFET P-CH 60V 1.9A SOT223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	封装: -	库存3,861	MOSFET (Metal Oxide)	60 V	1.9A (Ta)	4.5V, 10V	2V @ 270µA	13.9 nC @ 10 V	420 pF @ 30 V	±20V	-	1.8W (Ta), 5W (Tc)	250mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSC007N04LS6ATMA1	Infineon Technologies	MOSFET N-CH 40V 100A TDSON-8-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 381A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	封装: -	库存14,031	MOSFET (Metal Oxide)	40 V	381A (Tc)	4.5V, 10V	2.3V @ 250µA	94 nC @ 4.5 V	8400 pF @ 20 V	±20V	-	188W	0.7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
IQE004NE1LM7CGATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15 V Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 2V @ 432µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V Vgs (Max): ±7V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-3 Package / Case: 9-PowerTDFN	封装: -	库存29,940	MOSFET (Metal Oxide)	15 V	58A (Ta), 379A (Tc)	4.5V, 7V	2V @ 432µA	55 nC @ 7 V	6240 pF @ 7.5 V	±7V	-	2.1W (Ta), 89W (Tc)	0.45mOhm @ 30A, 7V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TTFN-9-3	9-PowerTDFN
IQD009N06NM5CGATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 163µA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-U02 Package / Case: 9-PowerTDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	42A (Ta), 445A (Tc)	6V, 10V	3.3V @ 163µA	150 nC @ 10 V	12000 pF @ 30 V	±20V	-	3W (Ta), 333W (Tc)	0.9mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TTFN-9-U02	9-PowerTDFN
IPD50P04P413AUMA2	Infineon Technologies	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	40 V	50A (Tc)	10V	4V @ 85µA	51 nC @ 10 V	3670 pF @ 25 V	±20V	-	58W (Tc)	12.6mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IMZA75R027M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	PG-TO247-4	TO-247-4
IPB65R090CFD7ATMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存8,550	MOSFET (Metal Oxide)	650 V	25A (Tc)	10V	4.5V @ 630µA	53 nC @ 10 V	2513 pF @ 400 V	±20V	-	127W (Tc)	90mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IAUCN04S6N007TATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存3,300	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IQE030N06NM5CGSCATMA1	Infineon Technologies	OPTIMOS LOWVOLTAGE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WHTFN-9-1 Package / Case: 9-PowerWDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	21A (Ta), 132A (Tc)	6V, 10V	3.3V @ 50µA	49 nC @ 10 V	3800 pF @ 30 V	±20V	-	2.5W (Ta), 100W (Tc)	3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WHTFN-9-1	9-PowerWDFN
BSZ130N03LSGATMA1	Infineon Technologies	MOSFET N-CH 30V 10A/35A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	封装: -	库存86,457	MOSFET (Metal Oxide)	30 V	10A (Ta), 35A (Tc)	4.5V, 10V	2.2V @ 250µA	13 nC @ 10 V	970 pF @ 15 V	±20V	-	2.1W (Ta), 25W (Tc)	13mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
IPN70R450P7SATMA1	Infineon Technologies	MOSFET N-CH 700V 10A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 7.1W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	封装: -	库存2,232	MOSFET (Metal Oxide)	700 V	10A (Tc)	10V	3.5V @ 120µA	13.1 nC @ 10 V	424 pF @ 400 V	±16V	-	7.1W (Tc)	450mOhm @ 2.3A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
BSC16DN25NS3GATMA1	Infineon Technologies	MOSFET N-CH 250V 10.9A TDSON-8-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 32µA Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	封装: -	库存20,946	MOSFET (Metal Oxide)	250 V	10.9A (Tc)	10V	4V @ 32µA	11.4 nC @ 10 V	920 pF @ 100 V	±20V	-	62.5W (Tc)	165mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-5	8-PowerTDFN
IPP600N25N3GXKSA1	Infineon Technologies	MOSFET N-CH 250V 25A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: -	库存1,902	MOSFET (Metal Oxide)	250 V	25A (Tc)	10V	4V @ 90µA	29 nC @ 10 V	2350 pF @ 100 V	±20V	-	136W (Tc)	60mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPA90R1K0C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 5.7A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 370µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封装: -	Request a Quote	MOSFET (Metal Oxide)	900 V	5.7A (Tc)	10V	3.5V @ 370µA	34 nC @ 10 V	850 pF @ 100 V	±20V	-	32W (Tc)	1Ohm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
AUIRFR5305TR	Infineon Technologies	MOSFET P-CH 55V 31A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存5,199	MOSFET (Metal Oxide)	55 V	31A (Tc)	-	4V @ 250µA	63 nC @ 10 V	1200 pF @ 25 V	-	-	-	65mOhm @ 16A, 10V	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB600N25N3GATMA1	Infineon Technologies	MOSFET N-CH 250V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存14,874	MOSFET (Metal Oxide)	250 V	25A (Tc)	10V	4V @ 90µA	29 nC @ 10 V	2350 pF @ 100 V	±20V	-	136W (Tc)	60mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IQD020N10NM5CGATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 159µA Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-U02 Package / Case: 9-PowerTDFN	封装: -	库存15,000	MOSFET (Metal Oxide)	100 V	26A (Ta), 273A (Tc)	6V, 10V	3.8V @ 159µA	134 nC @ 10 V	9500 pF @ 50 V	±20V	-	3W (Ta), 333W (Tc)	2.05mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TTFN-9-U02	9-PowerTDFN
IPD60R1K0PFD7SAUMA1	Infineon Technologies	CONSUMER PG-TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存1,284	MOSFET (Metal Oxide)	600 V	4.7A (Tc)	10V	4.5V @ 50µA	6 nC @ 10 V	230 pF @ 400 V	±20V	-	26W (Tc)	1Ohm @ 1A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD50R650CEBTMA1	Infineon Technologies	MOSFET N-CH 500V 6.1A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	500 V	6.1A (Tc)	13V	3.5V @ 150µA	15 nC @ 10 V	342 pF @ 100 V	±20V	-	47W (Tc)	650mOhm @ 1.8A, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IAUZ40N06S5N050ATMA1	Infineon Technologies	MOSFET N-CH 60V 40A TSDSON-8-33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.4V @ 29µA Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-33 Package / Case: 8-PowerTDFN	封装: -	库存30,855	MOSFET (Metal Oxide)	60 V	40A (Tj)	-	3.4V @ 29µA	30.5 nC @ 10 V	2200 pF @ 30 V	±20V	-	71W (Tc)	5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8-33	8-PowerTDFN
IPL60R385CPAUMA1	Infineon Technologies	MOSFET N-CH 600V 9A 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	3.5V @ 340µA	17 nC @ 10 V	790 pF @ 100 V	±20V	-	83W (Tc)	385mOhm @ 5.2A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IRLH5036TR2PBF	Infineon Technologies	MOSFET N-CH 60V 100A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	60 V	20A (Ta), 100A (Tc)	-	2.5V @ 150µA	90 nC @ 10 V	5360 pF @ 25 V	-	-	-	4.4mOhm @ 50A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
IRF7465TRPBFXTMA1	Infineon Technologies	PLANAR 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: -	Request a Quote	MOSFET (Metal Oxide)	150 V	1.9A (Ta)	10V	5.5V @ 250µA	15 nC @ 10 V	330 pF @ 25 V	±30V	-	2.5W (Ta)	280mOhm @ 1.14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IRFH5301TR2PBF	Infineon Technologies	MOSFET N-CH 30V 35A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	30 V	35A (Ta), 100A (Tc)	-	2.35V @ 100µA	77 nC @ 10 V	5114 pF @ 15 V	-	-	-	1.85mOhm @ 50A, 10V	-	Surface Mount	PQFN (5x6) Single Die	8-PowerVDFN
IPP073N13NM6AKSA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIMBG120R060M1XTMA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs(th) (Max) @ Id: 5.1V @ 4.3mA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 202W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	封装: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	38A (Tc)	18V, 20V	5.1V @ 4.3mA	32 nC @ 20 V	880 pF @ 800 V	+23V, -5V	-	202W (Tc)	75mOhm @ 13A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
BSZ036NE2LSATMA1	Infineon Technologies	MOSFET N-CH 25V 16A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	封装: -	库存191,511	MOSFET (Metal Oxide)	25 V	16A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	16 nC @ 10 V	1200 pF @ 12 V	±20V	-	2.1W (Ta), 37W (Tc)	3.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
IPP114N03LGHKSA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	2.2V @ 250µA	14 nC @ 10 V	1500 pF @ 15 V	±20V	-	38W (Tc)	11.4mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3