图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 650V 31.2A TO247
|
封装: TO-247-3 |
库存4,848 |
|
MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | ±20V | - | 277.8W (Tc) | 110 mOhm @ 12.7A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 650V TO-220-3
|
封装: TO-220-3 |
库存3,184 |
|
MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 4V @ 850µA | 64nC @ 10V | 3020pF @ 400V | ±20V | - | 171W (Tc) | 65 mOhm @ 17.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 650V TO220-3
|
封装: TO-220-3 Full Pack |
库存5,328 |
|
MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 4V @ 850µA | 64nC @ 10V | 3020pF @ 400V | ±20V | - | 34W (Tc) | 65 mOhm @ 17.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 600V TO247-4
|
封装: TO-247-4 |
库存7,024 |
|
MOSFET (Metal Oxide) | 600V | 53.5A (Tc) | 10V | 4.5V @ 1.72mA | 100nC @ 10V | 4750pF @ 100V | ±20V | - | 391W (Tc) | 70 mOhm @ 20.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
||
Infineon Technologies |
MOSFET N-CH 650V TO247-4
|
封装: TO-247-4 |
库存2,560 |
|
MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 4V @ 590µA | 45nC @ 10V | 2140pF @ 400V | ±20V | - | 128W (Tc) | 95 mOhm @ 11.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
封装: - |
库存3,824 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
库存3,744 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
TRANSISTOR N-CH
|
封装: - |
库存6,592 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 600V 35A TO220-3
|
封装: TO-220-3 |
库存3,072 |
|
MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 4V @ 800µA | 68nC @ 10V | 2850pF @ 400V | ±20V | - | 162W (Tc) | 60 mOhm @ 15.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 16A TO-220FP
|
封装: TO-220-3 Full Pack |
库存3,488 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 4V @ 800µA | 68nC @ 10V | 2850pF @ 400V | ±20V | - | 34W (Tc) | 60 mOhm @ 15.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 800V TO247
|
封装: - |
库存6,160 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,312 |
|
MOSFET (Metal Oxide) | 150V | 83A (Tc) | 10V | 5V @ 250µA | 107nC @ 10V | 4530pF @ 25V | ±30V | - | 330W (Tc) | 15 mOhm @ 33A, 10V | -40°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH TO220-3
|
封装: TO-220-3 |
库存7,952 |
|
MOSFET (Metal Oxide) | 300V | 44A (Tc) | 10V | 4V @ 270µA | 87nC @ 10V | 7180pF @ 100V | ±20V | - | 300W (Tc) | 41 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 24V 180A TO-247AD
|
封装: TO-247-3 |
库存6,624 |
|
MOSFET (Metal Oxide) | 24V | 180A (Tc) | 10V | 4V @ 250µA | 390nC @ 10V | 11220pF @ 25V | ±20V | - | 380W (Tc) | 1.6 mOhm @ 180A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 21.7A TO-247
|
封装: TO-247-3 |
库存5,840 |
|
MOSFET (Metal Oxide) | 650V | 21.7A (Tc) | 10V | 5V @ 1.2mA | 143nC @ 10V | 3160pF @ 25V | ±20V | - | 240W (Tc) | 185 mOhm @ 15.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,896 |
|
MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 4.5V @ 200µA | 12nC @ 10V | 557pF @ 100V | ±20V | - | 171W (Tc) | 600 mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 350A TO-247AC
|
封装: TO-247-3 |
库存6,208 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 4V @ 250µA | 330nC @ 10V | 8920pF @ 25V | ±20V | - | 380W (Tc) | 1.7 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 600V TO247-4
|
封装: TO-247-4 |
库存6,432 |
|
MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 4.5V @ 1.21mA | 70nC @ 10V | 3330pF @ 100V | ±20V | - | 278W (Tc) | 99 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
封装: - |
库存2,352 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
库存5,600 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 100V 130A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,056 |
|
MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 4V @ 250µA | 250nC @ 10V | 7670pF @ 50V | ±20V | - | 300W (Tc) | 7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 600V 31A TO-220
|
封装: TO-220-3 |
库存6,960 |
|
MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | ±20V | - | 255W (Tc) | 105 mOhm @ 18A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 31A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,504 |
|
MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | ±20V | - | 255W (Tc) | 105 mOhm @ 18A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 60V 31A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,312 |
|
MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | ±20V | - | 255W (Tc) | 99 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 600V TO263-3
|
封装: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
库存2,128 |
|
MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 4V @ 800µA | 68nC @ 10V | 2850pF @ 400V | ±20V | - | 162W (Tc) | 60 mOhm @ 15.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
||
Infineon Technologies |
MOSFET N-CH 60V 240A D2PAK
|
封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
库存112,776 |
|
MOSFET (Metal Oxide) | 60V | 240A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 160nC @ 4.5V | 11270pF @ 50V | ±16V | - | 380W (Tc) | 1.9 mOhm @ 180A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Infineon Technologies |
MOSFET N-CH 250V 64A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存4,096 |
|
MOSFET (Metal Oxide) | 250V | 64A (Tc) | 10V | 4V @ 270µA | 86nC @ 10V | 7100pF @ 100V | ±20V | - | 300W (Tc) | 20 mOhm @ 64A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
封装: - |
库存3,392 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
库存5,072 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
库存7,504 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |