页 176 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

AUIRF3004WL

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9450pF @ 32V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 195A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-262-3 Wide
Package / Case: TO-262-3 Wide Leads

封装: TO-262-3 Wide Leads

库存2,096

MOSFET (Metal Oxide)

40V

240A (Tc)

10V

4V @ 250µA

210nC @ 10V

9450pF @ 32V

±20V

-

375W (Tc)

1.4 mOhm @ 195A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-262-3 Wide

TO-262-3 Wide Leads

IPB044N15N5ATMA1

Infineon Technologies

MV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存3,536

-

IPB020N10N5LFATMA1

Infineon Technologies

MOSFET N-CH 100V D2PAK-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存6,080

-

IPT60R080G7XTMA1

Infineon Technologies

MOSFET N-CH 650V 29A HSOF-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 80 mOhm @ 9.7A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8
Package / Case: 8-PowerSFN

封装: 8-PowerSFN

库存3,728

MOSFET (Metal Oxide)

650V

29A (Tc)

10V

4V @ 490µA

42nC @ 10V

1640pF @ 400V

±20V

-

167W (Tc)

80 mOhm @ 9.7A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8

8-PowerSFN

IPP60R080P7XKSA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存2,400

-

IPA60R080P7XKSA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存3,504

-

IRFS7734-7PPBF

Infineon Technologies

MOSFET N-CH 75V 183A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 3.05 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263AB)
Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

库存6,464

MOSFET (Metal Oxide)

75V

197A (Tc)

6V, 10V

3.7V @ 150µA

270nC @ 10V

10130pF @ 25V

±20V

-

294W (Tc)

3.05 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK (TO-263AB)

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IPB65R110CFDAATMA1

Infineon Technologies

MOSFET N-CH TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,280

MOSFET (Metal Oxide)

650V

31.2A (Tc)

10V

4.5V @ 1.3mA

118nC @ 10V

3240pF @ 100V

±20V

-

277.8W (Tc)

110 mOhm @ 12.7A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO263

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPZ60R125P6FKSA1

Infineon Technologies

MOSFET N-CH 600V TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

封装: TO-247-4

库存2,896

MOSFET (Metal Oxide)

600V

37.9A (Tc)

10V

4.5V @ 1.21mA

70nC @ 10V

3330pF @ 100V

±20V

-

219W (Tc)

99 mOhm @ 14.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4

TO-247-4

IPW60R120C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 19A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 92W (Tc)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

封装: TO-247-3

库存5,136

MOSFET (Metal Oxide)

600V

19A (Tc)

10V

4V @ 390µA

34nC @ 10V

1500pF @ 400V

±20V

-

92W (Tc)

120 mOhm @ 7.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPA65R110CFDXKSA1

Infineon Technologies

MOSFET N-CH 650V 31.2A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34.7W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存4,528

MOSFET (Metal Oxide)

650V

31.2A (Tc)

10V

4.5V @ 1.3mA

118nC @ 10V

3240pF @ 100V

±20V

-

34.7W (Tc)

110 mOhm @ 12.7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220 Full Pack

TO-220-3 Full Pack

IPI65R110CFDXKSA1

Infineon Technologies

MOSFET N-CH 650V 31.2A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存6,240

MOSFET (Metal Oxide)

650V

31.2A (Tc)

10V

4.5V @ 1.3mA

118nC @ 10V

3240pF @ 100V

±20V

-

277.8W (Tc)

110 mOhm @ 12.7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI60R125CPXKSA1

Infineon Technologies

MOSFET N-CH 650V 25A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存3,344

MOSFET (Metal Oxide)

650V

25A (Tc)

10V

3.5V @ 1.1mA

70nC @ 10V

2500pF @ 100V

±20V

-

208W (Tc)

125 mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPA60R099C7XKSA1

Infineon Technologies

MOSFET N-CH 600V TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1819pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 99 mOhm @ 9.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存6,176

MOSFET (Metal Oxide)

600V

12A (Tc)

10V

4V @ 490µA

42nC @ 10V

1819pF @ 400V

±20V

-

33W (Tc)

99 mOhm @ 9.7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPI90R340C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 15A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存5,200

MOSFET (Metal Oxide)

900V

15A (Tc)

10V

3.5V @ 1mA

94nC @ 10V

2400pF @ 100V

±20V

-

208W (Tc)

340 mOhm @ 9.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPC60R099C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存3,312

-

IPW65R190CFDAFKSA1

Infineon Technologies

MOSFET N-CH 650V 17.5A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

封装: TO-247-3

库存6,704

MOSFET (Metal Oxide)

650V

17.5A (Tc)

10V

4.5V @ 700µA

68nC @ 10V

1850pF @ 100V

±20V

-

151W (Tc)

190 mOhm @ 7.3A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IAUT300N08S5N012ATMA2

Infineon Technologies

MOSFET N-CH 75V 120V 8HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 231nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 16250pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

封装: 8-PowerSFN

库存7,344

MOSFET (Metal Oxide)

80V

300A (Tc)

6V, 10V

3.8V @ 275µA

231nC @ 10V

16250pF @ 40V

±20V

-

375W (Tc)

1.2 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IPC302N25N3AX1SA1

Infineon Technologies

MOSFET N-CH 250V BARE DIE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Sawn on foil
Package / Case: Die

封装: Die

库存3,472

MOSFET (Metal Oxide)

250V

1A (Tj)

10V

4V @ 270µA

-

100 mOhm @ 2A, 10V

-

Surface Mount

Sawn on foil

Die

IPC60R099CPX1SA2

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存7,584

-

IPC60R165CPX1SA4

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存6,112

-

IPC302N20NFDX1SA1

Infineon Technologies

MOSFET N-CH 200V BARE DIE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Sawn on foil
Package / Case: Die

封装: Die

库存2,608

MOSFET (Metal Oxide)

200V

1A (Tj)

10V

4V @ 270µA

-

100 mOhm @ 2A, 10V

-

Surface Mount

Sawn on foil

Die

AUIRLSL3036

Infineon Technologies

MOSFET N-CH 60V 270A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存2,848

MOSFET (Metal Oxide)

60V

195A (Tc)

4.5V, 10V

2.5V @ 250µA

140nC @ 4.5V

11210pF @ 50V

±16V

-

380W (Tc)

2.4 mOhm @ 165A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2Pak, TO-262AA

IPB048N15N5ATMA1

Infineon Technologies

MV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存6,608

-

SIPC26N60C3X1SA5

Infineon Technologies

MOSFET COOL MOS SAWED WAFER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存5,296

-

IPC302N25N3X1SA1

Infineon Technologies

MOSFET N-CH 250V BARE DIE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Sawn on foil
Package / Case: Die

封装: Die

库存3,920

MOSFET (Metal Oxide)

250V

1A (Tj)

10V

4V @ 270µA

-

100 mOhm @ 2A, 10V

-

Surface Mount

Sawn on foil

Die

IPB015N08N5ATMA1

Infineon Technologies

MOSFET N-CH 80V 120A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Gate Charge (Qg) (Max) @ Vgs: 222nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7
Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封装: TO-263-7, D2Pak (6 Leads + Tab)

库存5,360

MOSFET (Metal Oxide)

80V

180A (Tc)

6V, 10V

3.8V @ 279µA

222nC @ 10V

16900pF @ 40V

±20V

-

375W (Tc)

1.5 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7

TO-263-7, D2Pak (6 Leads + Tab)

IPP04CN10NGXKSA1

Infineon Technologies

MV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存4,080

-

AUIRFS3004-7TRL

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 195A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封装: TO-263-7, D2Pak (6 Leads + Tab)

库存7,472

MOSFET (Metal Oxide)

40V

240A (Tc)

10V

4V @ 250µA

240nC @ 10V

9130pF @ 25V

±20V

-

380W (Tc)

1.25 mOhm @ 195A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK (7-Lead)

TO-263-7, D2Pak (6 Leads + Tab)

SPP24N60C3XKSA1

Infineon Technologies

MOSFET N-CH 650V 24.3A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 24.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 160 mOhm @ 15.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存3,776

MOSFET (Metal Oxide)

650V

24.3A (Tc)

10V

3.9V @ 1.2mA

135nC @ 10V

3000pF @ 25V

±20V

-

240W (Tc)

160 mOhm @ 15.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRF3004WL	Infineon Technologies	MOSFET N-CH 40V 240A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9450pF @ 32V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-262-3 Wide Package / Case: TO-262-3 Wide Leads	封装: TO-262-3 Wide Leads	库存2,096	MOSFET (Metal Oxide)	40V	240A (Tc)	10V	4V @ 250µA	210nC @ 10V	9450pF @ 32V	±20V	-	375W (Tc)	1.4 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-262-3 Wide	TO-262-3 Wide Leads
IPB044N15N5ATMA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存3,536	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB020N10N5LFATMA1	Infineon Technologies	MOSFET N-CH 100V D2PAK-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存6,080	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPT60R080G7XTMA1	Infineon Technologies	MOSFET N-CH 650V 29A HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 9.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	封装: 8-PowerSFN	库存3,728	MOSFET (Metal Oxide)	650V	29A (Tc)	10V	4V @ 490µA	42nC @ 10V	1640pF @ 400V	±20V	-	167W (Tc)	80 mOhm @ 9.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IPP60R080P7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存2,400	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA60R080P7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存3,504	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFS7734-7PPBF	Infineon Technologies	MOSFET N-CH 75V 183A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 197A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 3.05 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	库存6,464	MOSFET (Metal Oxide)	75V	197A (Tc)	6V, 10V	3.7V @ 150µA	270nC @ 10V	10130pF @ 25V	±20V	-	294W (Tc)	3.05 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IPB65R110CFDAATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,280	MOSFET (Metal Oxide)	650V	31.2A (Tc)	10V	4.5V @ 1.3mA	118nC @ 10V	3240pF @ 100V	±20V	-	277.8W (Tc)	110 mOhm @ 12.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPZ60R125P6FKSA1	Infineon Technologies	MOSFET N-CH 600V TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	封装: TO-247-4	库存2,896	MOSFET (Metal Oxide)	600V	37.9A (Tc)	10V	4.5V @ 1.21mA	70nC @ 10V	3330pF @ 100V	±20V	-	219W (Tc)	99 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
IPW60R120C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 19A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	封装: TO-247-3	库存5,136	MOSFET (Metal Oxide)	600V	19A (Tc)	10V	4V @ 390µA	34nC @ 10V	1500pF @ 400V	±20V	-	92W (Tc)	120 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPA65R110CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 31.2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34.7W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存4,528	MOSFET (Metal Oxide)	650V	31.2A (Tc)	10V	4.5V @ 1.3mA	118nC @ 10V	3240pF @ 100V	±20V	-	34.7W (Tc)	110 mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IPI65R110CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 31.2A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存6,240	MOSFET (Metal Oxide)	650V	31.2A (Tc)	10V	4.5V @ 1.3mA	118nC @ 10V	3240pF @ 100V	±20V	-	277.8W (Tc)	110 mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPI60R125CPXKSA1	Infineon Technologies	MOSFET N-CH 650V 25A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存3,344	MOSFET (Metal Oxide)	650V	25A (Tc)	10V	3.5V @ 1.1mA	70nC @ 10V	2500pF @ 100V	±20V	-	208W (Tc)	125 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPA60R099C7XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1819pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 9.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存6,176	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 490µA	42nC @ 10V	1819pF @ 400V	±20V	-	33W (Tc)	99 mOhm @ 9.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPI90R340C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 15A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存5,200	MOSFET (Metal Oxide)	900V	15A (Tc)	10V	3.5V @ 1mA	94nC @ 10V	2400pF @ 100V	±20V	-	208W (Tc)	340 mOhm @ 9.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPC60R099C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存3,312	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW65R190CFDAFKSA1	Infineon Technologies	MOSFET N-CH 650V 17.5A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	封装: TO-247-3	库存6,704	MOSFET (Metal Oxide)	650V	17.5A (Tc)	10V	4.5V @ 700µA	68nC @ 10V	1850pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 7.3A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IAUT300N08S5N012ATMA2	Infineon Technologies	MOSFET N-CH 75V 120V 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 231nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16250pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	封装: 8-PowerSFN	库存7,344	MOSFET (Metal Oxide)	80V	300A (Tc)	6V, 10V	3.8V @ 275µA	231nC @ 10V	16250pF @ 40V	±20V	-	375W (Tc)	1.2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IPC302N25N3AX1SA1	Infineon Technologies	MOSFET N-CH 250V BARE DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	封装: Die	库存3,472	MOSFET (Metal Oxide)	250V	1A (Tj)	10V	4V @ 270µA	-	-	-	-	-	100 mOhm @ 2A, 10V	-	Surface Mount	Sawn on foil	Die
IPC60R099CPX1SA2	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存7,584	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC60R165CPX1SA4	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存6,112	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC302N20NFDX1SA1	Infineon Technologies	MOSFET N-CH 200V BARE DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	封装: Die	库存2,608	MOSFET (Metal Oxide)	200V	1A (Tj)	10V	4V @ 270µA	-	-	-	-	-	100 mOhm @ 2A, 10V	-	Surface Mount	Sawn on foil	Die
AUIRLSL3036	Infineon Technologies	MOSFET N-CH 60V 270A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存2,848	MOSFET (Metal Oxide)	60V	195A (Tc)	4.5V, 10V	2.5V @ 250µA	140nC @ 4.5V	11210pF @ 50V	±16V	-	380W (Tc)	2.4 mOhm @ 165A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IPB048N15N5ATMA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存6,608	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIPC26N60C3X1SA5	Infineon Technologies	MOSFET COOL MOS SAWED WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存5,296	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC302N25N3X1SA1	Infineon Technologies	MOSFET N-CH 250V BARE DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	封装: Die	库存3,920	MOSFET (Metal Oxide)	250V	1A (Tj)	10V	4V @ 270µA	-	-	-	-	-	100 mOhm @ 2A, 10V	-	Surface Mount	Sawn on foil	Die
IPB015N08N5ATMA1	Infineon Technologies	MOSFET N-CH 80V 120A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 279µA Gate Charge (Qg) (Max) @ Vgs: 222nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	封装: TO-263-7, D2Pak (6 Leads + Tab)	库存5,360	MOSFET (Metal Oxide)	80V	180A (Tc)	6V, 10V	3.8V @ 279µA	222nC @ 10V	16900pF @ 40V	±20V	-	375W (Tc)	1.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2Pak (6 Leads + Tab)
IPP04CN10NGXKSA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存4,080	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRFS3004-7TRL	Infineon Technologies	MOSFET N-CH 40V 240A D2PAK-7P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	封装: TO-263-7, D2Pak (6 Leads + Tab)	库存7,472	MOSFET (Metal Oxide)	40V	240A (Tc)	10V	4V @ 250µA	240nC @ 10V	9130pF @ 25V	±20V	-	380W (Tc)	1.25 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab)
SPP24N60C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 24.3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 15.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存3,776	MOSFET (Metal Oxide)	650V	24.3A (Tc)	10V	3.9V @ 1.2mA	135nC @ 10V	3000pF @ 25V	±20V	-	240W (Tc)	160 mOhm @ 15.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3