图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 95A TO-247AC
|
封装: TO-247-3 |
库存6,256 |
|
MOSFET (Metal Oxide) | 55V | 95A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 5600pF @ 25V | ±20V | - | 310W (Tc) | 5.3 mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 79A TO220-FP
|
封装: TO-220-3 Full Pack |
库存7,248 |
|
MOSFET (Metal Oxide) | 100V | 79A (Tc) | 6V, 10V | 3.5V @ 270µA | 206nC @ 10V | 14800pF @ 50V | ±20V | - | 41W (Tc) | 3 mOhm @ 79A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
库存3,248 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 40V 340A D2PAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,600 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 4V @ 250µA | 240nC @ 10V | 9200pF @ 25V | ±20V | - | 380W (Tc) | 1.75 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 40V 295A TO262WL
|
封装: TO-262-3 Wide Leads |
库存121,200 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 4V @ 250µA | 225nC @ 10V | 7978pF @ 25V | ±20V | - | 300W (Tc) | 1.8 mOhm @ 187A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Wide | TO-262-3 Wide Leads |
||
Infineon Technologies |
MOSFET N-CH 200V BARE DIE
|
封装: Die |
库存3,088 |
|
MOSFET (Metal Oxide) | 200V | 1A (Tj) | 10V | 4V @ 260µA | - | - | - | - | - | 100 mOhm @ 2A, 10V | - | Surface Mount | Sawn on foil | Die |
||
Infineon Technologies |
MOSFET NCH 200V 72A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,744 |
|
MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | ±20V | - | 375W (Tc) | 22 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | - | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 150V 105A AUTO
|
封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存6,032 |
|
MOSFET (Metal Oxide) | 150V | 105A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 5320pF @ 50V | ±20V | - | 380W (Tc) | 11.8 mOhm @ 63A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET N-CH 150V 105A AUTO
|
封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存7,824 |
|
MOSFET (Metal Oxide) | 150V | 105A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 5320pF @ 50V | ±20V | - | 380W (Tc) | 11.8 mOhm @ 63A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET N-CH TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,888 |
|
MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 4V @ 590µA | 45nC @ 10V | 2140pF @ 400V | ±20V | - | 128W (Tc) | 95 mOhm @ 11.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 200V 43A TO-262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,488 |
|
MOSFET (Metal Oxide) | 200V | 43A (Tc) | - | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | - | - | - | 54 mOhm @ 26A, 10V | - | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 55V 160A TO262-7
|
封装: TO-262-7 |
库存31,944 |
|
MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 7820pF @ 25V | ±20V | - | 300W (Tc) | 2.6 mOhm @ 140A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-7 |
||
Infineon Technologies |
MOSFET N-CH 4VSON
|
封装: 4-PowerTSFN |
库存7,424 |
|
MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 4V @ 590µA | 45nC @ 10V | 2140pF @ 400V | ±20V | - | 128W (Tc) | 99 mOhm @ 5.9A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
||
Infineon Technologies |
MOSFET NCH 40V 240A D2PAK
|
封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存6,224 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 266nC @ 4.5V | 16488pF @ 25V | ±16V | - | 375W (Tc) | 0.75 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7
|
封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存4,400 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 3.9V @ 250µA | 460nC @ 10V | 13975pF @ 25V | ±20V | - | 375W (Tc) | 0.75 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET N-CH 150V 99A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,536 |
|
MOSFET (Metal Oxide) | 150V | 99A (Tc) | 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | ±20V | - | 375W (Tc) | 12.1 mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 380A D2PAK-7P
|
封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
库存5,424 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 180nC @ 4.5V | 10990pF @ 40V | ±20V | - | 380W (Tc) | 1.4 mOhm @ 200A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
||
Infineon Technologies |
MOSFET N CH 150V 99A TO262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,200 |
|
MOSFET (Metal Oxide) | 150V | 99A (Tc) | 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | ±20V | - | 375W (Tc) | 12.1 mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 150V 99A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,040 |
|
MOSFET (Metal Oxide) | 150V | 99A (Tc) | 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | ±20V | - | 375W (Tc) | 12.1 mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
DIFFERENTIATED MOSFETS
|
封装: - |
库存6,800 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-220
|
封装: TO-220-3 Full Pack |
库存507,240 |
|
MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | ±20V | - | 34.5W (Tc) | 190 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 60V 300A D2PAK-7P
|
封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存3,520 |
|
MOSFET (Metal Oxide) | 60V | 240A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 160nC @ 4.5V | 11270pF @ 50V | ±16V | - | 380W (Tc) | 1.9 mOhm @ 180A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
||
Infineon Technologies |
HIGH POWER_LEGACY
|
封装: - |
库存4,080 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
HIGH POWER_LEGACY
|
封装: - |
库存5,280 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
库存5,808 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 650V TO220-3
|
封装: TO-220-3 Full Pack |
库存2,368 |
|
MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | ±20V | - | 32W (Tc) | 125 mOhm @ 8.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 120V 120A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,888 |
|
MOSFET (Metal Oxide) | 120V | 120A (Tc) | 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | ±20V | - | 300W (Tc) | 4.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 650V 13.4A TO-247
|
封装: TO-247-3 |
库存2,944 |
|
MOSFET (Metal Oxide) | 650V | 13.4A (Tc) | 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | ±20V | - | 156W (Tc) | 330 mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7P
|
封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存2,064 |
|
MOSFET (Metal Oxide) | 100V | 190A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11490pF @ 50V | ±16V | - | 370W (Tc) | 3.9 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET N-CH 600V 16A TO-247
|
封装: TO-247-3 |
库存62,388 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | ±20V | - | 139W (Tc) | 199 mOhm @ 9.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |