图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 150V 105A SUPER247
|
封装: TO-274AA |
库存4,480 |
|
MOSFET (Metal Oxide) | 150V | 105A (Tc) | 10V | 5V @ 250µA | 390nC @ 10V | 6810pF @ 25V | ±30V | - | 441W (Tc) | 15 mOhm @ 63A, 10V | -55°C ~ 175°C (TJ) | Through Hole | SUPER-247 (TO-274AA) | TO-274AA |
||
Infineon Technologies |
MOSFET HIGH POWER_NEW
|
封装: - |
库存6,656 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 650V TO-220-3
|
封装: TO-220-3 |
库存7,824 |
|
MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | ±20V | - | 277.8W (Tc) | 110 mOhm @ 12.7A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V D2PAK-7
|
封装: - |
库存3,488 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET COOL MOS 600V
|
封装: - |
库存3,920 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,520 |
|
MOSFET (Metal Oxide) | 300V | 44A (Tc) | 10V | 4V @ 270µA | 87nC @ 10V | 7180pF @ 100V | ±20V | - | 300W (Tc) | 40.7 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 200V 88A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,760 |
|
MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 4V @ 270µA | 87nC @ 10V | 7100pF @ 100V | ±20V | - | 300W (Tc) | 11 mOhm @ 88A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 650V TO247
|
封装: TO-247-3 |
库存6,912 |
|
MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | ±20V | - | 195.3W (Tc) | 150 mOhm @ 9.3A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
TRENCH_MOSFETS
|
封装: - |
库存2,144 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MV POWER MOS
|
封装: - |
库存4,592 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MV POWER MOS
|
封装: - |
库存3,024 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MV POWER MOS
|
封装: - |
库存2,512 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,512 |
|
MOSFET (Metal Oxide) | 100V | 180A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | ±16V | - | 370W (Tc) | 4.3 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 300V 38A TO-247AC
|
封装: TO-247-3 |
库存109,572 |
|
MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 5V @ 250µA | 125nC @ 10V | 5168pF @ 50V | ±20V | - | 341W (Tc) | 69 mOhm @ 24A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Infineon Technologies |
TRANSISTOR N-CH
|
封装: - |
库存2,272 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 100V 120A TO247
|
封装: TO-247-3 |
库存6,384 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4V @ 250µA | 210nC @ 10V | 9620pF @ 50V | ±20V | - | 370W (Tc) | 4.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
封装: - |
库存2,336 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-247
|
封装: TO-247-3 |
库存12,828 |
|
MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 220 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 31A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,104 |
|
MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | ±20V | - | 255W (Tc) | 105 mOhm @ 18A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
库存7,184 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 200 D2PAK-3
|
封装: - |
库存2,640 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET
|
封装: DirectFET? Isometric MX |
库存61,764 |
|
MOSFET (Metal Oxide) | 30V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 65nC @ 4.5V | 5640pF @ 15V | ±20V | - | 2.8W (Ta), 89W (Tc) | 2.2 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
Infineon Technologies |
MOSFET N-CH 650V TO247
|
封装: TO-247-3 |
库存5,664 |
|
MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | ±20V | - | 101W (Tc) | 125 mOhm @ 8.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
DIFFERENTIATED MOSFETS
|
封装: - |
库存5,088 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 650V TO-220-3
|
封装: TO-220-3 |
库存5,440 |
|
MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 4V @ 590µA | 45nC @ 10V | 2140pF @ 400V | ±20V | - | 128W (Tc) | 95 mOhm @ 11.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 650V TO220-3
|
封装: TO-220-3 Full Pack |
库存5,984 |
|
MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 4V @ 590µA | 45nC @ 10V | 2140pF @ 400V | ±20V | - | 34W (Tc) | 95 mOhm @ 11.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MV POWER MOS
|
封装: - |
库存6,672 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MV POWER MOS
|
封装: - |
库存2,832 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 75V 170A TO247AC
|
封装: TO-247-3 |
库存4,320 |
|
MOSFET (Metal Oxide) | 75V | 170A (Tc) | 10V | 4V @ 250µA | 270nC @ 10V | 7500pF @ 25V | ±20V | - | 310W (Tc) | 4.5 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 72A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,136 |
|
MOSFET (Metal Oxide) | 200V | 72A (Tc) | - | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | - | - | 375W (Tc) | 22 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |