页 22 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  22/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRGP4062D-EPBF
Infineon Technologies

IGBT 600V 48A 250W TO247AD

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存4,320
600V
48A
72A
1.95V @ 15V, 24A
250W
115µJ (on), 600µJ (off)
Standard
75nC
41ns/104ns
400V, 24A, 10 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRG4RC20FTRLPBF
Infineon Technologies

IGBT 600V 22A 66W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 66W
  • Switching Energy: 190µJ (on), 920µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 26ns/194ns
  • Test Condition: 480V, 12A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存4,960
600V
22A
44A
2.1V @ 15V, 12A
66W
190µJ (on), 920µJ (off)
Standard
27nC
26ns/194ns
480V, 12A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRG4IBC20FD
Infineon Technologies

IGBT 600V 14.3A 34W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14.3A
  • Current - Collector Pulsed (Icm): 64A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
  • Power - Max: 34W
  • Switching Energy: 250µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 43ns/240ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
封装: TO-220-3 Full Pack
库存5,424
600V
14.3A
64A
2V @ 15V, 9A
34W
250µJ (on), 640µJ (off)
Standard
27nC
43ns/240ns
480V, 9A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
TIG110BF
ON Semiconductor

IGBT 600V 27A 2W TO220

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 27A
  • Current - Collector Pulsed (Icm): 108A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 2W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 65ns/250ns
  • Test Condition: 300V, 15A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FI(LS)
封装: TO-220-3 Full Pack
库存4,608
600V
27A
108A
2V @ 15V, 15A
2W
-
Standard
95nC
65ns/250ns
300V, 15A, 30 Ohm, 15V
-
-
Through Hole
TO-220-3 Full Pack
TO-220FI(LS)
IXGH60N60B2
IXYS

IGBT 600V 75A 500W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 500W
  • Switching Energy: 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 28ns/160ns
  • Test Condition: 400V, 50A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存5,776
600V
75A
300A
1.8V @ 15V, 50A
500W
1mJ (off)
Standard
170nC
28ns/160ns
400V, 50A, 3.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot IXGH40N60B2D1
IXYS

IGBT 600V 75A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 18ns/130ns
  • Test Condition: 400V, 30A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存153,540
600V
75A
200A
1.7V @ 15V, 30A
300W
400µJ (off)
Standard
100nC
18ns/130ns
400V, 30A, 3.3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot SGL60N90DG3TU
Fairchild/ON Semiconductor

IGBT 900V 60A 180W TO264

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
  • Power - Max: 180W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 260nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.5µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封装: TO-264-3, TO-264AA
库存4,416
900V
60A
120A
2.7V @ 15V, 60A
180W
-
Standard
260nC
-
-
1.5µs
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
IRGR4610DTRPBF
Infineon Technologies

IGBT 600V 16A 77W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,536
600V
16A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
13nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
hot IXYH30N450HV
IXYS

IGBT 4500V 30A TO-247HV

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 4500V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
  • Power - Max: 430W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 88nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 960V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247HV
封装: TO-247-3 Variant
库存5,360
4500V
60A
200A
3.9V @ 15V, 30A
430W
-
Standard
88nC
-
960V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
TO-247HV
IXGL200N60B3
IXYS

IGBT 600V 150A 400W ISOPLUS264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
  • Power - Max: 400W
  • Switching Energy: 1.6mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 750nC
  • Td (on/off) @ 25°C: 44ns/310ns
  • Test Condition: 300V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS264?
  • Supplier Device Package: ISOPLUS264?
封装: ISOPLUS264?
库存7,360
600V
150A
600A
1.5V @ 15V, 100A
400W
1.6mJ (on), 2.9mJ (off)
Standard
750nC
44ns/310ns
300V, 100A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS264?
ISOPLUS264?
IXXH75N60C3D1
IXYS

IGBT 600V 150A 750W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 750W
  • Switching Energy: 1.6mJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 107nC
  • Td (on/off) @ 25°C: 35ns/90ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存6,784
600V
150A
300A
2.3V @ 15V, 60A
750W
1.6mJ (on), 800µJ (off)
Standard
107nC
35ns/90ns
400V, 60A, 5 Ohm, 15V
25ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
STGWA40H60DLFB
STMicroelectronics

IGBT TRENCH 600V 40A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 7V, 40A
  • Power - Max: 283W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: TO-247-3
库存6,336
600V
40A
-
2V @ 7V, 40A
283W
-
Standard
-
-
-
-
175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
hot STGPL6NC60D
STMicroelectronics

IGBT 600V 14A 56W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
  • Power - Max: 56W
  • Switching Energy: 46.5µJ (on), 23.5µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 6.7ns/46ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存4,432
600V
14A
18A
2.9V @ 15V, 3A
56W
46.5µJ (on), 23.5µJ (off)
Standard
12nC
6.7ns/46ns
390V, 3A, 10 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IKP15N65F5XKSA1
Infineon Technologies

IGBT 650V 30A 105W PG-TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 105W
  • Switching Energy: 130µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 17ns/150ns
  • Test Condition: 400V, 7.5A, 39 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封装: TO-220-3
库存9,792
650V
30A
45A
2.1V @ 15V, 15A
105W
130µJ (on), 40µJ (off)
Standard
38nC
17ns/150ns
400V, 7.5A, 39 Ohm, 15V
50ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
hot STGW40NC60W
STMicroelectronics

IGBT 600V 70A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 230A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 302µJ (on), 349µJ (off)
  • Input Type: Standard
  • Gate Charge: 126nC
  • Td (on/off) @ 25°C: 33ns/168ns
  • Test Condition: 390V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: TO-247-3
库存390,000
600V
70A
230A
2.5V @ 15V, 30A
250W
302µJ (on), 349µJ (off)
Standard
126nC
33ns/168ns
390V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
FGH40T65SPD_F155
Fairchild/ON Semiconductor

IGBT 650V 80A 267W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 267W
  • Switching Energy: 1.16mJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 16ns/37ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存82,056
650V
80A
120A
2.4V @ 15V, 40A
267W
1.16mJ (on), 280µJ (off)
Standard
35nC
16ns/37ns
400V, 40A, 6 Ohm, 15V
34ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
RGS50TSX2GC11
Rohm Semiconductor

IGBT TRENCH FS 1200V 50A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 395 W
  • Switching Energy: 1.4mJ (on), 1.65mJ (off)
  • Input Type: Standard
  • Gate Charge: 67 nC
  • Td (on/off) @ 25°C: 37ns/140ns
  • Test Condition: 600V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: -
库存408
1200 V
50 A
75 A
2.1V @ 15V, 25A
395 W
1.4mJ (on), 1.65mJ (off)
Standard
67 nC
37ns/140ns
600V, 25A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
STGW75H65DFB2-4
STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 7

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 115 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 357 W
  • Switching Energy: 992µJ (on), 766µJ (off)
  • Input Type: Standard
  • Gate Charge: 207 nC
  • Td (on/off) @ 25°C: 22ns/121ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 88 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4
封装: -
库存159
650 V
115 A
225 A
2V @ 15V, 75A
357 W
992µJ (on), 766µJ (off)
Standard
207 nC
22ns/121ns
400V, 75A, 10Ohm, 15V
88 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
HGTA32N60E2
Harris Corporation

32A, 600V N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
  • Power - Max: 208 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 265 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-5
  • Supplier Device Package: TO-218-5
封装: -
Request a Quote
600 V
50 A
200 A
2.9V @ 15V, 32A
208 W
-
Standard
265 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-218-5
TO-218-5
AFGHL40T120RH
onsemi

1200V/40A FSII IGBT (NO FRD) TO2

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1250 V
  • Current - Collector (Ic) (Max): 48 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 400 W
  • Switching Energy: 3.7mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 277 nC
  • Td (on/off) @ 25°C: 37ns/150ns
  • Test Condition: 600V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 195 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
Request a Quote
1250 V
48 A
160 A
2.4V @ 15V, 40A
400 W
3.7mJ (on), 1.2mJ (off)
Standard
277 nC
37ns/150ns
600V, 40A, 5Ohm, 15V
195 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
CY25CAJ-8F-T13-G11
Renesas Electronics Corporation

N-CHANNEL IGBT FOR STROBE FLASH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FGY140T120SWD
onsemi

IGBT FIELD STOP 1200V 280A TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 280 A
  • Current - Collector Pulsed (Icm): 560 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 140A
  • Power - Max: 1150 W
  • Switching Energy: 4.7mJ (on), 2.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 415.4 nC
  • Td (on/off) @ 25°C: 59.2ns/249.6ns
  • Test Condition: 600V, 140A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 307.3 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247-3
封装: -
Request a Quote
1200 V
280 A
560 A
2V @ 15V, 140A
1150 W
4.7mJ (on), 2.3mJ (off)
Standard
415.4 nC
59.2ns/249.6ns
600V, 140A, 4.7Ohm, 15V
307.3 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
TO-247-3
IKY50N120CH7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 75A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
  • Power - Max: 398 W
  • Switching Energy: 1.09mJ (on), 1.33mJ (off)
  • Input Type: Standard
  • Gate Charge: 372 nC
  • Td (on/off) @ 25°C: 35ns/331ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 86 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-U10
封装: -
库存609
1200 V
75 A
200 A
2.15V @ 15V, 50A
398 W
1.09mJ (on), 1.33mJ (off)
Standard
372 nC
35ns/331ns
-
86 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-U10
IXYP10N65B3D1
IXYS

IGBT PT 650V 32A TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 32 A
  • Current - Collector Pulsed (Icm): 62 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
  • Power - Max: 160 W
  • Switching Energy: 300µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 20 nC
  • Td (on/off) @ 25°C: 17ns/125ns
  • Test Condition: 400V, 10A, 50Ohm, 15V
  • Reverse Recovery Time (trr): 29 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: -
Request a Quote
650 V
32 A
62 A
1.95V @ 15V, 10A
160 W
300µJ (on), 200µJ (off)
Standard
20 nC
17ns/125ns
400V, 10A, 50Ohm, 15V
29 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
RGS30TSX2GC11
Rohm Semiconductor

IGBT TRENCH FLD 1200V 30A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 267 W
  • Switching Energy: 740µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 41 nC
  • Td (on/off) @ 25°C: 30ns/70ns
  • Test Condition: 600V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: -
库存1,350
1200 V
30 A
45 A
2.1V @ 15V, 15A
267 W
740µJ (on), 600µJ (off)
Standard
41 nC
30ns/70ns
600V, 15A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
FGH60N60SFDTU-F085
onsemi

IGBT FIELD STOP 600V 120A TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 378 W
  • Switching Energy: 1.97mJ (on), 570µJ (off)
  • Input Type: Standard
  • Gate Charge: 188 nC
  • Td (on/off) @ 25°C: 26ns/134ns
  • Test Condition: 400V, 60A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 55 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
Request a Quote
600 V
120 A
180 A
2.9V @ 15V, 60A
378 W
1.97mJ (on), 570µJ (off)
Standard
188 nC
26ns/134ns
400V, 60A, 5Ohm, 15V
55 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
SIGC61T60NCX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 65ns/170ns
  • Test Condition: 300V, 75A, 3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
75 A
225 A
2.5V @ 15V, 75A
-
-
Standard
-
65ns/170ns
300V, 75A, 3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IXYH20N120C4
IXYS

IGBT DISCRETE TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FGP3040G2-F085
onsemi

IGBT 400V 41A TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 900ns/4.8µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封装: -
Request a Quote
400 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
21 nC
900ns/4.8µs
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
IGC39T65QEX1SA1
Infineon Technologies

IGBT TRENCH FS 650V 75A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
650 V
75 A
225 A
2.22V @ 15V, 75A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die