页 20 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  20/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGB4640DPBF
Infineon Technologies

DIODE 600V 40A TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AC
封装: TO-220-3
库存7,904
600V
65A
72A
1.9V @ 15V, 24A
250W
115µJ (on), 600µJ (off)
Standard
75nC
41ns/104ns
400V, 24A, 10 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AC
SGW50N60HSFKSA1
Infineon Technologies

IGBT 600V 100A 416W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Power - Max: 416W
  • Switching Energy: 1.96mJ
  • Input Type: Standard
  • Gate Charge: 179nC
  • Td (on/off) @ 25°C: 47ns/310ns
  • Test Condition: 400V, 50A, 6.8 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存2,656
600V
100A
150A
3.15V @ 15V, 50A
416W
1.96mJ
Standard
179nC
47ns/310ns
400V, 50A, 6.8 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRG4IBC30KD
Infineon Technologies

IGBT 600V 17A 45W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 17A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 45W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
封装: TO-220-3 Full Pack
库存6,048
600V
17A
34A
2.7V @ 15V, 16A
45W
600µJ (on), 580µJ (off)
Standard
67nC
60ns/160ns
480V, 16A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IXSP24N60B
IXYS

IGBT 600V 48A 150W TO220AB

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 41nC
  • Td (on/off) @ 25°C: 50ns/150ns
  • Test Condition: 480V, 24A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存7,888
600V
48A
96A
2.5V @ 15V, 24A
150W
1.3mJ (off)
Standard
41nC
50ns/150ns
480V, 24A, 33 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot NGB15N41CLT4
ON Semiconductor

IGBT 440V 15A 107W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A
  • Power - Max: 107W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存10,188
440V
15A
50A
2.2V @ 4V, 10A
107W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRGC4059B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 4A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存3,424
600V
4A
-
-
-
-
Standard
-
-
-
-
175°C (TJ)
Surface Mount
Die
Die
IXGT16N170A
IXYS

IGBT 1700V 16A 190W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
  • Power - Max: 190W
  • Switching Energy: 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 36ns/160ns
  • Test Condition: 850V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存3,216
1700V
16A
40A
5V @ 15V, 11A
190W
900µJ (off)
Standard
65nC
36ns/160ns
850V, 16A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
STGW80V60F
STMicroelectronics

IGBT 600V 120A 469W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
  • Power - Max: 469W
  • Switching Energy: 1.8mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 448nC
  • Td (on/off) @ 25°C: 60ns/220ns
  • Test Condition: 400V, 80A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存7,168
600V
120A
240A
2.3V @ 15V, 80A
469W
1.8mJ (on), 1mJ (off)
Standard
448nC
60ns/220ns
400V, 80A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXGH17N100A
IXYS

IGBT 1000V 34A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
  • Power - Max: 150W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 100ns/500ns
  • Test Condition: 800V, 17A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存3,552
1000V
34A
68A
4V @ 15V, 17A
150W
3mJ (off)
Standard
100nC
100ns/500ns
800V, 17A, 82 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
NGTB60N60SWG
ON Semiconductor

IGBT 600V 120A 298W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 298W
  • Switching Energy: 1.41mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 173nC
  • Td (on/off) @ 25°C: 87ns/180ns
  • Test Condition: 400V, 60A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 76ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存3,408
600V
120A
240A
2.5V @ 15V, 60A
298W
1.41mJ (on), 600µJ (off)
Standard
173nC
87ns/180ns
400V, 60A, 10 Ohm, 15V
76ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
STGW40H60DLFB
STMicroelectronics

IGBT 600V 80A 283W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 283W
  • Switching Energy: 363µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: -/142ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存3,440
600V
80A
160A
2V @ 15V, 40A
283W
363µJ (off)
Standard
210nC
-/142ns
400V, 40A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
AOK15B60D
Alpha & Omega Semiconductor Inc.

IGBT 600V 30A 167W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A
  • Power - Max: 167W
  • Switching Energy: 510µJ (on), 110µJ (off)
  • Input Type: Standard
  • Gate Charge: 25.4nC
  • Td (on/off) @ 25°C: 23ns/74ns
  • Test Condition: 400V, 15A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 196ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存5,280
600V
30A
60A
1.8V @ 15V, 15A
167W
510µJ (on), 110µJ (off)
Standard
25.4nC
23ns/74ns
400V, 15A, 20 Ohm, 15V
196ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
APT25GN120BG
Microsemi Corporation

IGBT 1200V 67A 272W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 67A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 272W
  • Switching Energy: 2.15µJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 22ns/280ns
  • Test Condition: 800V, 25A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存4,368
1200V
67A
75A
2.1V @ 15V, 25A
272W
2.15µJ (off)
Standard
155nC
22ns/280ns
800V, 25A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot IXGH6N170A
IXYS

IGBT 1700V 6A 75W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 14A
  • Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
  • Power - Max: 75W
  • Switching Energy: 590µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.5nC
  • Td (on/off) @ 25°C: 46ns/220ns
  • Test Condition: 850V, 6A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存160,452
1700V
6A
14A
7V @ 15V, 3A
75W
590µJ (on), 180µJ (off)
Standard
18.5nC
46ns/220ns
850V, 6A, 33 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot FGH40T120SMD
Fairchild/ON Semiconductor

IGBT 1200V 80A 555W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 555W
  • Switching Energy: 2.7mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 40ns/475ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存257,352
1200V
80A
160A
2.4V @ 15V, 40A
555W
2.7mJ (on), 1.1mJ (off)
Standard
370nC
40ns/475ns
600V, 40A, 10 Ohm, 15V
65ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB40N120L3WG
ON Semiconductor

IGBT 1200V 160A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 454W
  • Switching Energy: 1.5mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 18ns/150ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 86ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存5,920
1200V
160A
160A
2V @ 15V, 40A
454W
1.5mJ (on), 1.5mJ (off)
Standard
220nC
18ns/150ns
600V, 40A, 10 Ohm, 15V
86ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
GPA020A135MN-FD
Global Power Technologies Group

IGBT 1350V 40A 223W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A
  • Power - Max: 223W
  • Switching Energy: 2.5mJ (on), 760µJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 25ns/175ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 425ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3P
封装: TO-3
库存6,800
1350V
40A
60A
2.3V @ 15V, 20A
223W
2.5mJ (on), 760µJ (off)
Standard
180nC
25ns/175ns
600V, 20A, 10 Ohm, 15V
425ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-3P
hot IRG4BC30FPBF
Infineon Technologies

IGBT 600V 31A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 124A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 230µJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存181,860
600V
31A
124A
1.8V @ 15V, 17A
100W
230µJ (on), 1.18mJ (off)
Standard
51nC
21ns/200ns
480V, 17A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXBH20N300
IXYS

IGBT 3000V 50A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.35µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
封装: TO-247-3
库存5,600
3000V
50A
140A
3.2V @ 15V, 20A
250W
-
Standard
105nC
-
-
1.35µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXBH)
IXGH45N120
IXYS

IGBT 1200V 75A 300W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
  • Power - Max: 300W
  • Switching Energy: 14mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 55ns/370ns
  • Test Condition: 960V, 45A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存5,152
1200V
75A
180A
2.5V @ 15V, 45A
300W
14mJ (off)
Standard
170nC
55ns/370ns
960V, 45A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
STGW15M120DF3
STMicroelectronics

IGBT 1200V 30A 259W

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
  • Power - Max: 259W
  • Switching Energy: 550µJ (on), 850µJ (off)
  • Input Type: Standard
  • Gate Charge: 226nC
  • Td (on/off) @ 25°C: 26ns/122ns
  • Test Condition: 600V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 270ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存14,424
1200V
30A
60A
2.3V @ 15V, 15A
259W
550µJ (on), 850µJ (off)
Standard
226nC
26ns/122ns
600V, 15A, 22 Ohm, 15V
270ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGFW20V60DF
STMicroelectronics

IGBT 600V 40A 52W TO-3PF

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 52W
  • Switching Energy: 200µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 38ns/149ns
  • Test Condition: 400V, 20A, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
封装: TO-3P-3 Full Pack
库存15,432
600V
40A
80A
2.2V @ 15V, 20A
52W
200µJ (on), 130µJ (off)
Standard
116nC
38ns/149ns
400V, 20A, 15V
40ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
IRG7PH42UPBF
Infineon Technologies

IGBT 1200V 90A 385W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 385W
  • Switching Energy: 2.11mJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 157nC
  • Td (on/off) @ 25°C: 25ns/229ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存6,348
1200V
90A
90A
2V @ 15V, 30A
385W
2.11mJ (on), 1.18mJ (off)
Standard
157nC
25ns/229ns
600V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IXGH32N170A
IXYS

IGBT 1700V 32A 350W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
  • Power - Max: 350W
  • Switching Energy: 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 46ns/260ns
  • Test Condition: 850V, 32A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存118,800
1700V
32A
110A
5V @ 15V, 21A
350W
1.5mJ (off)
Standard
155nC
46ns/260ns
850V, 32A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
LGB8202ATI
Littelfuse Inc.

IGBT 440V 20A 150W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKWH70N65WR6XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 122A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 122 A
  • Current - Collector Pulsed (Icm): 210 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
  • Power - Max: 290 W
  • Switching Energy: 2.2mJ (on), 1.07mJ (off)
  • Input Type: Standard
  • Gate Charge: 269 nC
  • Td (on/off) @ 25°C: 42ns/378ns
  • Test Condition: 400V, 70A, 15Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
封装: -
库存909
650 V
122 A
210 A
1.85V @ 15V, 70A
290 W
2.2mJ (on), 1.07mJ (off)
Standard
269 nC
42ns/378ns
400V, 70A, 15Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
WG50N65DHJQ
WeEn Semiconductors

WG50N65DHJ/SOT1293/STANDARD MARK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 91 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 278 W
  • Switching Energy: 1.7mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 160 nC
  • Td (on/off) @ 25°C: 66ns/163ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 105 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
Request a Quote
650 V
91 A
200 A
2V @ 15V, 50A
278 W
1.7mJ (on), 600µJ (off)
Standard
160 nC
66ns/163ns
400V, 50A, 10Ohm, 15V
105 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
GT50N322A
Toshiba Semiconductor and Storage

IGBT 1000V 50A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
  • Power - Max: 156 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 800 ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
封装: -
库存306
1000 V
50 A
120 A
2.8V @ 15V, 60A
156 W
-
Standard
-
-
-
800 ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
MGF65A6H
Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/60

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.37V @ 15V, 60A
  • Power - Max: 405 W
  • Switching Energy: 1.4mJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 50ns/130ns
  • Test Condition: 400V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P-3L
封装: -
Request a Quote
650 V
80 A
100 A
2.37V @ 15V, 60A
405 W
1.4mJ (on), 1.3mJ (off)
Standard
110 nC
50ns/130ns
400V, 60A, 10Ohm, 15V
50 ns
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P-3L
SIGC15T60EX1SA1
Infineon Technologies

IGBT TRENCH FS 600V 30A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
30 A
90 A
1.9V @ 15V, 30A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die