页 148 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  148/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IXGT32N60C
IXYS

IGBT 600V 60A 200W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
  • Power - Max: 200W
  • Switching Energy: 320µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 25ns/85ns
  • Test Condition: 480V, 32A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存6,688
600V
60A
120A
2.5V @ 15V, 32A
200W
320µJ (off)
Standard
110nC
25ns/85ns
480V, 32A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot HGTP7N60A4D
Fairchild/ON Semiconductor

IGBT 600V 34A 125W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 125W
  • Switching Energy: 55µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 37nC
  • Td (on/off) @ 25°C: 11ns/100ns
  • Test Condition: 390V, 7A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存96,300
600V
34A
56A
2.7V @ 15V, 7A
125W
55µJ (on), 60µJ (off)
Standard
37nC
11ns/100ns
390V, 7A, 25 Ohm, 15V
34ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXYX100N120C3
IXYS

IGBT 1200V 188A 1150W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 188A
  • Current - Collector Pulsed (Icm): 490A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
  • Power - Max: 1150W
  • Switching Energy: 6.5mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 270nC
  • Td (on/off) @ 25°C: 32ns/123ns
  • Test Condition: 600V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存2,416
1200V
188A
490A
3.5V @ 15V, 100A
1150W
6.5mJ (on), 2.9mJ (off)
Standard
270nC
32ns/123ns
600V, 100A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGH120N30C3
IXYS

IGBT 300V 75A 540W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
  • Power - Max: 540W
  • Switching Energy: 230µJ (on), 730µJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 28ns/109ns
  • Test Condition: 200V, 60A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存7,440
300V
75A
600A
2.1V @ 15V, 120A
540W
230µJ (on), 730µJ (off)
Standard
230nC
28ns/109ns
200V, 60A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGA20N100
IXYS

IGBT 1000V 40A 150W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 73nC
  • Td (on/off) @ 25°C: 30ns/350ns
  • Test Condition: 800V, 20A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,544
1000V
40A
80A
3V @ 15V, 20A
150W
3.5mJ (off)
Standard
73nC
30ns/350ns
800V, 20A, 47 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
STGWA25H120DF2
STMicroelectronics

IGBT HB 1200V 25A HS TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
  • Power - Max: 375W
  • Switching Energy: 600µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 29ns/130ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 303ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存5,376
1200V
50A
100A
2.6V @ 15V, 25A
375W
600µJ (on), 700µJ (off)
Standard
100nC
29ns/130ns
600V, 25A, 10 Ohm, 15V
303ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
AUIRGF65A40D0
Infineon Technologies

DISCRETES

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存7,520
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD
STGB20V60DF
STMicroelectronics

IGBT 600V 40A 167W D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 200µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 38ns/149ns
  • Test Condition: 400V, 20A, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,816
600V
40A
80A
2.2V @ 15V, 20A
167W
200µJ (on), 130µJ (off)
Standard
116nC
38ns/149ns
400V, 20A, 15V
40ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
STGD10NC60ST4
STMicroelectronics

IGBT 600V 18A 60W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 60µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 18nC
  • Td (on/off) @ 25°C: 19ns/160ns
  • Test Condition: 390V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,952
600V
18A
25A
1.65V @ 15V, 5A
60W
60µJ (on), 340µJ (off)
Standard
18nC
19ns/160ns
390V, 5A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
STGI25N36LZAG
STMicroelectronics

DISCRETE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 25.7 nC
  • Td (on/off) @ 25°C: 1.1µs/7.4µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262 (I2PAK)
封装: -
Request a Quote
350 V
25 A
50 A
1.25V @ 4V, 6A
150 W
-
Logic
25.7 nC
1.1µs/7.4µs
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262 (I2PAK)
RGWX5TS65EHRC11
Rohm Semiconductor

IGBT TRENCH FLD 650V 132A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 132 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
  • Power - Max: 348 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 213 nC
  • Td (on/off) @ 25°C: 59ns/243ns
  • Test Condition: 400V, 37.5A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: -
库存1,350
650 V
132 A
300 A
1.9V @ 15V, 75A
348 W
-
Standard
213 nC
59ns/243ns
400V, 37.5A, 10Ohm, 15V
100 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
IPF011N08NM6ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RGW60TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 60A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 178 W
  • Switching Energy: 480µJ (on), 490µJ (off)
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 37ns/114ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: -
库存1,350
650 V
60 A
120 A
1.9V @ 15V, 30A
178 W
480µJ (on), 490µJ (off)
Standard
84 nC
37ns/114ns
400V, 30A, 10Ohm, 15V
92 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
SIGC18T60NCX1SA5
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
21ns/110ns
300V, 20A, 13Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die