页 21 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  21/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGIB4610DPBF
Infineon Technologies

IGBT 600V FULLPAK220 COPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: 122µJ (on), 56µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
封装: TO-220-3 Full Pack
库存5,456
600V
10A
-
-
-
122µJ (on), 56µJ (off)
Standard
-
-
-
-
-
Through Hole
TO-220-3 Full Pack
TO-220FP
IRG8P08N120KDPBF
Infineon Technologies

IGBT 1200V 15A 89W TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 15A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
  • Power - Max: 89W
  • Switching Energy: 300µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 20ns/160ns
  • Test Condition: 600V, 5A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存5,808
1200V
15A
15A
2V @ 15V, 5A
89W
300µJ (on), 300µJ (off)
Standard
45nC
20ns/160ns
600V, 5A, 47 Ohm, 15V
50ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG4BC30F
Infineon Technologies

IGBT 600V 31A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 230µJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存4,224
600V
31A
120A
1.8V @ 15V, 17A
100W
230µJ (on), 1.18mJ (off)
Standard
51nC
21ns/200ns
480V, 17A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGB35N35LZ-1
STMicroelectronics

IGBT 345V 40A 176W I2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 345V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 4.5V, 15A
  • Power - Max: 176W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: 1.1µs/26.5µs
  • Test Condition: 300V, 15A, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: I2PAK
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存4,704
345V
40A
80A
1.7V @ 4.5V, 15A
176W
-
Logic
49nC
1.1µs/26.5µs
300V, 15A, 5V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
I2PAK
IXGP16N60B2D1
IXYS

IGBT 600V 40A 150W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
  • Power - Max: 150W
  • Switching Energy: 160µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 18ns/73ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存7,120
600V
40A
100A
1.95V @ 15V, 12A
150W
160µJ (on), 120µJ (off)
Standard
24nC
18ns/73ns
400V, 12A, 22 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
APT15GP60KG
Microsemi Corporation

IGBT 600V 56A 250W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 65A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 130µJ (on), 121µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 8ns/29ns
  • Test Condition: 400V, 15A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 [K]
封装: TO-220-3
库存2,592
600V
56A
65A
2.7V @ 15V, 15A
250W
130µJ (on), 121µJ (off)
Standard
55nC
8ns/29ns
400V, 15A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220 [K]
SGS5N60RUFDTU
Fairchild/ON Semiconductor

IGBT 600V 8A 35W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 15A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 5A
  • Power - Max: 35W
  • Switching Energy: 88µJ (on), 107µJ (off)
  • Input Type: Standard
  • Gate Charge: 16nC
  • Td (on/off) @ 25°C: 13ns/34ns
  • Test Condition: 300V, 5A, 40 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
封装: TO-220-3 Full Pack
库存3,248
600V
8A
15A
2.8V @ 15V, 5A
35W
88µJ (on), 107µJ (off)
Standard
16nC
13ns/34ns
300V, 5A, 40 Ohm, 15V
55ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
hot STGB3NB60SDT4
STMicroelectronics

IGBT 600V 6A 70W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
  • Power - Max: 70W
  • Switching Energy: 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 18nC
  • Td (on/off) @ 25°C: 125ns/3.4µs
  • Test Condition: 480V, 3A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): 1.7µs
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存360,000
600V
6A
25A
1.5V @ 15V, 3A
70W
1.15mJ (off)
Standard
18nC
125ns/3.4µs
480V, 3A, 1 kOhm, 15V
1.7µs
175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
MMIX1G120N120A3V1
IXYS

IGBT 1200V 220A 400W SMPD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 220A
  • Current - Collector Pulsed (Icm): 700A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
  • Power - Max: 400W
  • Switching Energy: 10mJ (on), 33mJ (off)
  • Input Type: Standard
  • Gate Charge: 420nC
  • Td (on/off) @ 25°C: 40ns/490ns
  • Test Condition: 960V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): 700ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-PowerSMD, 21 Leads
  • Supplier Device Package: SMPD
封装: 24-PowerSMD, 21 Leads
库存3,536
1200V
220A
700A
2.2V @ 15V, 100A
400W
10mJ (on), 33mJ (off)
Standard
420nC
40ns/490ns
960V, 100A, 1 Ohm, 15V
700ns
-55°C ~ 150°C (TJ)
Surface Mount
24-PowerSMD, 21 Leads
SMPD
IXBF9N160G
IXYS

IGBT 1600V 7A 70W I4PAC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1600V
  • Current - Collector (Ic) (Max): 7A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 5A
  • Power - Max: 70W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 960V, 5A, 27 Ohm, 10V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
封装: i4-Pac?-5 (3 leads)
库存6,704
1600V
7A
-
7V @ 15V, 5A
70W
-
Standard
34nC
-
960V, 5A, 27 Ohm, 10V
-
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5 (3 leads)
ISOPLUS i4-PAC?
NGTB50N65S1WG
ON Semiconductor

IGBT TRENCH 650V 140A TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 1.25mJ (on), 530µJ (off)
  • Input Type: Standard
  • Gate Charge: 128nC
  • Td (on/off) @ 25°C: 75ns/128ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存2,288
650V
140A
140A
2.45V @ 15V, 50A
300W
1.25mJ (on), 530µJ (off)
Standard
128nC
75ns/128ns
400V, 50A, 10 Ohm, 15V
70ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IXYX25N250CV1HV
IXYS

IGBT 2500V 235A PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 95A
  • Current - Collector Pulsed (Icm): 235A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
  • Power - Max: 937W
  • Switching Energy: 8.3mJ (on), 7.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 147nC
  • Td (on/off) @ 25°C: 15ns/230ns
  • Test Condition: 1250V, 25A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 220ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存7,536
2500V
95A
235A
4V @ 15V, 25A
937W
8.3mJ (on), 7.3mJ (off)
Standard
147nC
15ns/230ns
1250V, 25A, 5 Ohm, 15V
220ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
RGTH80TS65DGC11
Rohm Semiconductor

IGBT 650V 70A 234W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 234W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: 34ns/120ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: TO-247-3
库存9,132
650V
70A
160A
2.1V @ 15V, 40A
234W
-
Standard
79nC
34ns/120ns
400V, 40A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
hot STGW50HF60S
STMicroelectronics

IGBT 600V 110A 284W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A
  • Power - Max: 284W
  • Switching Energy: 250µJ (on), 4.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 50ns/220ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存390,240
600V
110A
130A
1.45V @ 15V, 30A
284W
250µJ (on), 4.2mJ (off)
Standard
200nC
50ns/220ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRGB4061DPBF
Infineon Technologies

IGBT 600V 36A 206W TO220AB

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 36A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
  • Power - Max: 206W
  • Switching Energy: 95µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 40ns/105ns
  • Test Condition: 400V, 18A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存27,504
600V
36A
72A
1.95V @ 15V, 18A
206W
95µJ (on), 350µJ (off)
Standard
35nC
40ns/105ns
400V, 18A, 22 Ohm, 15V
100ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IKW40N65F5FKSA1
Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 255W
  • Switching Energy: 360µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 19ns/160ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存7,632
650V
74A
120A
2.1V @ 15V, 40A
255W
360µJ (on), 100µJ (off)
Standard
95nC
19ns/160ns
400V, 20A, 15 Ohm, 15V
60ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IRGS30B60KTRRP
Infineon Technologies

IGBT 600V 78A 370W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
  • Power - Max: 370W
  • Switching Energy: 350µJ (on), 825µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 46ns/185ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存14,472
600V
78A
120A
2.35V @ 15V, 30A
370W
350µJ (on), 825µJ (off)
Standard
102nC
46ns/185ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
APT15GT120BRDQ1G
Microsemi Corporation

IGBT 1200V 36A 250W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 36A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 585µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: 10ns/85ns
  • Test Condition: 800V, 15A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存7,224
1200V
36A
45A
3.6V @ 15V, 15A
250W
585µJ (on), 260µJ (off)
Standard
105nC
10ns/85ns
800V, 15A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
STGP30M65DF2
STMicroelectronics

IGBT 650V 30A TO-220AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 258W
  • Switching Energy: 300µJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 31.6ns/115ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: TO-220-3
库存13,968
650V
60A
120A
2V @ 15V, 30A
258W
300µJ (on), 960µJ (off)
Standard
80nC
31.6ns/115ns
400V, 30A, 10 Ohm, 15V
140ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
hot FGL60N100BNTD
Fairchild/ON Semiconductor

IGBT 1000V 60A 180W TO264

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 180W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 275nC
  • Td (on/off) @ 25°C: 140ns/630ns
  • Test Condition: 600V, 60A, 51 Ohm, 15V
  • Reverse Recovery Time (trr): 1.2µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封装: TO-264-3, TO-264AA
库存250,032
1000V
60A
120A
2.9V @ 15V, 60A
180W
-
Standard
275nC
140ns/630ns
600V, 60A, 51 Ohm, 15V
1.2µs
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
IXBX55N300
IXYS

IGBT 3000V 130A 625W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 130A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
  • Power - Max: 625W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 335nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.9µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存6,160
3000V
130A
600A
3.2V @ 15V, 55A
625W
-
Standard
335nC
-
-
1.9µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
RJP4002ANS-00-Q1
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG4BC30SPBF-INF
Infineon Technologies

IGBT 600V 34A TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 34 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100 W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: -
Request a Quote
600 V
34 A
-
1.6V @ 15V, 18A
100 W
260µJ (on), 3.45mJ (off)
Standard
-
22ns/540ns
480V, 18A, 23Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
LGB8206ARI
Littelfuse Inc.

IGBT 390V 20A 150W D2PAK3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGW60T120FKSA1
Infineon Technologies

IGBT TRENCH 1200V 100A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
  • Power - Max: 375 W
  • Switching Energy: 9.5mJ
  • Input Type: Standard
  • Gate Charge: 280 nC
  • Td (on/off) @ 25°C: 50ns/480ns
  • Test Condition: 600V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
封装: -
库存24
1200 V
100 A
150 A
2.4V @ 15V, 60A
375 W
9.5mJ
Standard
280 nC
50ns/480ns
600V, 60A, 10Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
APT75GN60SDQ2G
Microchip Technology

IGBT TRENCH FS 600V 155A D3PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 155 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
  • Power - Max: 536 W
  • Switching Energy: 2.5mJ (on), 2.14mJ (off)
  • Input Type: Standard
  • Gate Charge: 485 nC
  • Td (on/off) @ 25°C: 47ns/385ns
  • Test Condition: 400V, 75A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
封装: -
库存99
600 V
155 A
225 A
1.85V @ 15V, 75A
536 W
2.5mJ (on), 2.14mJ (off)
Standard
485 nC
47ns/385ns
400V, 75A, 1Ohm, 15V
25 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
SIGC14T60SNCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 31ns/261ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
31ns/261ns
400V, 15A, 21Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RGW60NL65DHRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 67A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 67 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 187 W
  • Switching Energy: 180µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 34ns/122ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 96 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
封装: -
Request a Quote
650 V
67 A
120 A
1.9V @ 15V, 30A
187 W
180µJ (on), 250µJ (off)
Standard
84 nC
34ns/122ns
400V, 15A, 10Ohm, 15V
96 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
IXYK30N170CV1
IXYS

DISC IGBT XPT-HI VOLTAGE TO-264(

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 250 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A
  • Power - Max: 937 W
  • Switching Energy: 3.6mJ (on), 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: 16ns/143ns
  • Test Condition: 850V, 30A, 2.7Ohm, 15V
  • Reverse Recovery Time (trr): 33 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXYK)
封装: -
Request a Quote
1700 V
100 A
250 A
4V @ 15V, 30A
937 W
3.6mJ (on), 1.8mJ (off)
Standard
150 nC
16ns/143ns
850V, 30A, 2.7Ohm, 15V
33 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXYK)
IRGC25B120UB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
1200 V
25 A
-
2.7V @ 15V, 10A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die