晶体管 - UGBT，MOSFET - 单

IRG8CH42K10D

Infineon Technologies

IGBT 1200V 40A DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IRG7PK42UD1MPBF

Infineon Technologies

IGBT 1200V DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IRGIB6B60KD116P

Infineon Technologies

IGBT 600V 11A 38W TO220FP

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 11A
• Current - Collector Pulsed (Icm): 22A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
• Power - Max: 38W
• Switching Energy: 110µJ (on), 135µJ (off)
• Input Type: Standard
• Gate Charge: 18.2nC
• Td (on/off) @ 25°C: 25ns/215ns
• Test Condition: 400V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 70ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

封装: TO-220-3 Full Pack

IRG4PSH71UD

Infineon Technologies

IGBT 1200V 99A 350W SUPER247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 99A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
• Power - Max: 350W
• Switching Energy: 8.8mJ (on), 9.4mJ (off)
• Input Type: Standard
• Gate Charge: 380nC
• Td (on/off) @ 25°C: 46ns/250ns
• Test Condition: 960V, 70A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 110ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-274AA
• Supplier Device Package: SUPER-247 (TO-274AA)

封装: TO-274AA

IXGH40N60

IXYS

IGBT 600V 75A 250W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
• Power - Max: 250W
• Switching Energy: 3mJ (off)
• Input Type: Standard
• Gate Charge: 200nC
• Td (on/off) @ 25°C: 100ns/600ns
• Test Condition: 480V, 40A, 22 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

IRGC4069B

Infineon Technologies

IGBT CHIP WAFER

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 35A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: Die

APT100GT60B2RG

Microsemi Corporation

IGBT 600V 148A 500W SOT247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 148A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
• Power - Max: 500W
• Switching Energy: 3.25mJ (on), 3.125mJ (off)
• Input Type: Standard
• Gate Charge: 460nC
• Td (on/off) @ 25°C: 40ns/320ns
• Test Condition: 400V, 100A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: -

封装: TO-247-3 Variant

APT70GR65B2SCD30

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 134A
• Current - Collector Pulsed (Icm): 260A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A
• Power - Max: 595W
• Switching Energy: -
• Input Type: -
• Gate Charge: 305nC
• Td (on/off) @ 25°C: 19ns/170ns
• Test Condition: 433V, 70A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: T-MAX? [B2]

封装: TO-247-3

IXGT24N60B

IXYS

IGBT 600V 24A TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

FGM623S

Sanken

IGBT 600V 30A 60W TO3PF

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
• Power - Max: 60W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 65nC
• Td (on/off) @ 25°C: 100ns/300ns
• Test Condition: 300V, 30A, 39 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PF

封装: TO-3P-3 Full Pack

NGTG20N60L2TF1G

ON Semiconductor

IGBT 600V 40A 64W TO-3PF

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 105A
• Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
• Power - Max: 64W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 84nC
• Td (on/off) @ 25°C: 60ns/193ns
• Test Condition: 300V, 20A, 30 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: -

封装: TO-3P-3 Full Pack

STGB4M65DF2

STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, M S

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 8A
• Current - Collector Pulsed (Icm): 16A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
• Power - Max: 68W
• Switching Energy: 40µJ (on), 136µJ (off)
• Input Type: Standard
• Gate Charge: 15.2nC
• Td (on/off) @ 25°C: 12ns/86ns
• Test Condition: 400V, 4A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 133ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT75GN60BG

Microsemi Corporation

IGBT 600V 155A 536W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 155A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
• Power - Max: 536W
• Switching Energy: 2500µJ (on), 2140µJ (off)
• Input Type: Standard
• Gate Charge: 485nC
• Td (on/off) @ 25°C: 47ns/385ns
• Test Condition: 400V, 75A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

封装: TO-247-3

IHW15N120E1XKSA1

Infineon Technologies

IGBT 1200V 15A TO247-3

• IGBT Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
• Power - Max: 156W
• Switching Energy: 300µJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封装: TO-247-3

IRG4BC15UD-SPBF

Infineon Technologies

IGBT 600V 14A 49W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 42A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
• Power - Max: 49W
• Switching Energy: 240µJ (on), 260µJ (off)
• Input Type: Standard
• Gate Charge: 23nC
• Td (on/off) @ 25°C: 17ns/160ns
• Test Condition: 480V, 7.8A, 75 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT43GA90B

Microsemi Corporation

IGBT 900V 78A 337W TO-247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 78A
• Current - Collector Pulsed (Icm): 129A
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A
• Power - Max: 337W
• Switching Energy: 875µJ (on), 425µJ (off)
• Input Type: Standard
• Gate Charge: 116nC
• Td (on/off) @ 25°C: 12ns/82ns
• Test Condition: 600V, 25A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

封装: TO-247-3

IXYH40N120B3D1

IXYS

IGBT 1200V 86A 480W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 86A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
• Power - Max: 480W
• Switching Energy: 2.7mJ (on), 1.6mJ (off)
• Input Type: Standard
• Gate Charge: 87nC
• Td (on/off) @ 25°C: 22ns/177ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

封装: TO-247-3

STGWT38IH130D

STMicroelectronics

IGBT 1300V 63A 250W TO3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1300V
• Current - Collector (Ic) (Max): 63A
• Current - Collector Pulsed (Icm): 125A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
• Power - Max: 250W
• Switching Energy: 3.4mJ (off)
• Input Type: Standard
• Gate Charge: 127nC
• Td (on/off) @ 25°C: -/284ns
• Test Condition: 960V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3P

封装: TO-3P-3 Full Pack

FGA40T65SHDF

Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-3PN

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
• Power - Max: 268W
• Switching Energy: 1.22mJ (on), 440µJ (off)
• Input Type: Standard
• Gate Charge: 68nC
• Td (on/off) @ 25°C: 18ns/64ns
• Test Condition: 400V, 40A, 6 Ohm, 15V
• Reverse Recovery Time (trr): 101ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

封装: TO-3P-3, SC-65-3

FGA25S125P_SN00337

Fairchild/ON Semiconductor

IGBT 1250V 50A 250W TO-3PN

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1250V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
• Power - Max: 250W
• Switching Energy: 1.09mJ (on), 580µJ (off)
• Input Type: Standard
• Gate Charge: 204nC
• Td (on/off) @ 25°C: 24ns/502ns
• Test Condition: 600V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

封装: TO-3P-3, SC-65-3

RJP60D0DPE-00#J3

Renesas Electronics America

IGBT 600V 45A 122W LDPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 45A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
• Power - Max: 122W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 45nC
• Td (on/off) @ 25°C: 35ns/90ns
• Test Condition: 300V, 22A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-83
• Supplier Device Package: 4-LDPAK

封装: SC-83

FGD3325G2-F085

onsemi

IGBT 250V 41A TO252AA

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 250 V
• Current - Collector (Ic) (Max): 41 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
• Power - Max: 150 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 21 nC
• Td (on/off) @ 25°C: 800ns/5.1µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

封装: -

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SIGC06T60EX7SA1

Infineon Technologies

IGBT TRENCH FS 600V 10A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 10 A
• Current - Collector Pulsed (Icm): 30 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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AOT10B65MQ2

Alpha & Omega Semiconductor Inc.

IGBT 10A

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): 30 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
• Power - Max: 150 W
• Switching Energy: 180µJ (on), 130µJ (off)
• Input Type: Standard
• Gate Charge: 24 nC
• Td (on/off) @ 25°C: 12ns/91ns
• Test Condition: 400V, 10A, 30Ohm, 15V
• Reverse Recovery Time (trr): 106 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封装: -

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STGP30H65DFB2

STMicroelectronics

IGBT 600V 60A 258W TO220AB

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
• Power - Max: 167 W
• Switching Energy: 270µJ (on), 310µJ (off)
• Input Type: Standard
• Gate Charge: 90 nC
• Td (on/off) @ 25°C: 18.4ns/71ns
• Test Condition: 400V, 30A, 6.8Ohm, 15V
• Reverse Recovery Time (trr): 115 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封装: -

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RJP6065DPE-00-J3

Renesas Electronics Corporation

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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HGTD3N60B3

Harris Corporation

IGBT 600V 7A IPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 7 A
• Current - Collector Pulsed (Icm): 20 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
• Power - Max: 33.3 W
• Switching Energy: 66µJ (on), 88µJ (off)
• Input Type: Standard
• Gate Charge: 21 nC
• Td (on/off) @ 25°C: 18ns/105ns
• Test Condition: 480V, 3.5A, 82Ohm, 15V
• Reverse Recovery Time (trr): 16 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
• Supplier Device Package: IPAK

封装: -

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IRGC49B120UB

Infineon Technologies

IGBT CHIP

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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FGD2736G3-F085

onsemi

IGBT 360V 21A TO252AA

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 360 V
• Current - Collector (Ic) (Max): 21 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.65V @ 4.5V, 10A
• Power - Max: 150 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 18 nC
• Td (on/off) @ 25°C: 4µs/15µs
• Test Condition: 14V, 10A, 1000Ohm, 5V
• Reverse Recovery Time (trr): 7 µs
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

封装: -

FGI3040G2-F085

onsemi

ECOSPARK 2-400V IGNITION IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Current - Collector (Ic) (Max): 41 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
• Power - Max: 150 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 21 nC
• Td (on/off) @ 25°C: 900ns/4.8µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
• Supplier Device Package: TO-262 (I2PAK)

封装: -