页 145 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  145/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IKD10N60R
Infineon Technologies

IGBT 600V 20A 150W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 590µJ
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 14ns/192ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 62ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,200
600V
20A
30A
2.1V @ 15V, 10A
150W
590µJ
Standard
64nC
14ns/192ns
400V, 10A, 23 Ohm, 15V
62ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IRG4RC10UD
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 40ns/87ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,120
600V
8.5A
34A
2.6V @ 15V, 5A
38W
140µJ (on), 120µJ (off)
Standard
15nC
40ns/87ns
480V, 5A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRG4RC10STR
Infineon Technologies

IGBT 600V 14A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 2.58mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 25ns/630ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,840
600V
14A
18A
1.8V @ 15V, 8A
38W
140µJ (on), 2.58mJ (off)
Standard
15nC
25ns/630ns
480V, 8A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRG4PC50U
Infineon Technologies

IGBT 600V 55A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
  • Power - Max: 200W
  • Switching Energy: 120µJ (on), 540µJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 32ns/170ns
  • Test Condition: 480V, 27A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存53,568
600V
55A
220A
2V @ 15V, 27A
200W
120µJ (on), 540µJ (off)
Standard
180nC
32ns/170ns
480V, 27A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IXGA90N33TC
IXYS

IGBT 330V 90A 200W TO263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 69nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,472
330V
90A
-
1.8V @ 15V, 45A
200W
-
Standard
69nC
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
hot IXGP7N60B
IXYS

IGBT 600V 14A 54W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
  • Power - Max: 54W
  • Switching Energy: 70µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 9ns/100ns
  • Test Condition: 480V, 7A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存34,512
600V
14A
30A
2V @ 15V, 7A
54W
70µJ (on), 300µJ (off)
Standard
25nC
9ns/100ns
480V, 7A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot NGP15N41CLG
ON Semiconductor

IGBT 440V 15A 107W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A
  • Power - Max: 107W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存3,904
440V
15A
50A
2.2V @ 4V, 10A
107W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4RC10UDTRRP
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 40ns/87ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,888
600V
8.5A
34A
2.6V @ 15V, 5A
38W
140µJ (on), 120µJ (off)
Standard
15nC
40ns/87ns
480V, 5A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXYX50N170C
IXYS

IGBT 1700V 178A PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 178A
  • Current - Collector Pulsed (Icm): 460A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Power - Max: 1500W
  • Switching Energy: 8.7mJ (on), 5.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 260nC
  • Td (on/off) @ 25°C: 20ns/180ns
  • Test Condition: 850V, 50A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): 44ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存2,400
1700V
178A
460A
3.7V @ 15V, 50A
1500W
8.7mJ (on), 5.6mJ (off)
Standard
260nC
20ns/180ns
850V, 50A, 1 Ohm, 15V
44ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGX120N60A3
IXYS

IGBT 600V 200A 780W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
  • Power - Max: 780W
  • Switching Energy: 2.7mJ (on), 6.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 450nC
  • Td (on/off) @ 25°C: 39ns/295ns
  • Test Condition: 480V, 100A, 1.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存5,520
600V
200A
600A
1.35V @ 15V, 100A
780W
2.7mJ (on), 6.6mJ (off)
Standard
450nC
39ns/295ns
480V, 100A, 1.5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IKP40N65F5XKSA1
Infineon Technologies

IGBT 650V 74A 255W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 255W
  • Switching Energy: 360µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 19ns/160ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
封装: TO-220-3
库存2,560
650V
74A
120A
2.1V @ 15V, 40A
255W
360µJ (on), 100µJ (off)
Standard
95nC
19ns/160ns
400V, 20A, 15 Ohm, 15V
60ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
STGD5NB120SZ-1
STMicroelectronics

IGBT 1200V 10A 75W IPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 10A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
  • Power - Max: 75W
  • Switching Energy: 2.59mJ (on), 9mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 690ns/12.1µs
  • Test Condition: 960V, 5A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: I-Pak
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存4,944
1200V
10A
10A
2V @ 15V, 5A
75W
2.59mJ (on), 9mJ (off)
Standard
-
690ns/12.1µs
960V, 5A, 1 kOhm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
I-Pak
STGW20V60F
STMicroelectronics

IGBT 600V 40A 167W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 200µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 38ns/149ns
  • Test Condition: 400V, 20A, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存17,844
600V
40A
80A
2.2V @ 15V, 20A
167W
200µJ (on), 130µJ (off)
Standard
116nC
38ns/149ns
400V, 20A, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IXXK200N65B4
IXYS

IGBT 650V 370A 1150W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 370A
  • Current - Collector Pulsed (Icm): 1000A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
  • Power - Max: 1150W
  • Switching Energy: 4.4mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 553nC
  • Td (on/off) @ 25°C: 62ns/245ns
  • Test Condition: 400V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXXK)
封装: TO-264-3, TO-264AA
库存4,624
650V
370A
1000A
1.7V @ 15V, 160A
1150W
4.4mJ (on), 2.2mJ (off)
Standard
553nC
62ns/245ns
400V, 100A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXXK)
RJH60F7DPQ-A0#T0
Renesas Electronics America

IGBT 600V 90A 328.9W TO247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
  • Power - Max: 328.9W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 63ns/142ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
封装: TO-247-3
库存6,304
600V
90A
-
1.75V @ 15V, 50A
328.9W
-
Standard
-
63ns/142ns
400V, 30A, 5 Ohm, 15V
90ns
150°C (TJ)
Through Hole
TO-247-3
TO-247A
hot STGW40NC60KD
STMicroelectronics

IGBT 600V 70A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 595µJ (on), 716µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 46ns/164ns
  • Test Condition: 480V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: TO-247-3
库存390,072
600V
70A
220A
2.7V @ 15V, 30A
250W
595µJ (on), 716µJ (off)
Standard
135nC
46ns/164ns
480V, 30A, 10 Ohm, 15V
45ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
hot APT65GP60B2G
Microsemi Corporation

IGBT 600V 100A 833W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
  • Power - Max: 833W
  • Switching Energy: 605µJ (on), 896µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 30ns/91ns
  • Test Condition: 400V, 65A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
封装: TO-247-3 Variant
库存8,028
600V
100A
250A
2.7V @ 15V, 65A
833W
605µJ (on), 896µJ (off)
Standard
210nC
30ns/91ns
400V, 65A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
IXGR48N60C3D1
IXYS

IGBT 600V 56A 125W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 230A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 125W
  • Switching Energy: 410µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/60ns
  • Test Condition: 400V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封装: ISOPLUS247?
库存6,252
600V
56A
230A
2.7V @ 15V, 30A
125W
410µJ (on), 230µJ (off)
Standard
77nC
19ns/60ns
400V, 30A, 3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
hot IRG4PC40FDPBF
Infineon Technologies

IGBT 600V 49A 160W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 49A
  • Current - Collector Pulsed (Icm): 196A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
  • Power - Max: 160W
  • Switching Energy: 950µJ (on), 2.01mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 63ns/230ns
  • Test Condition: 480V, 27A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存115,464
600V
49A
196A
1.7V @ 15V, 27A
160W
950µJ (on), 2.01mJ (off)
Standard
100nC
63ns/230ns
480V, 27A, 10 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot ISL9V5036S3ST
Fairchild/ON Semiconductor

IGBT 390V 46A 250W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 46A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存14,820
390V
46A
-
1.6V @ 4V, 10A
250W
-
Logic
32nC
-/10.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
IXYH40N120C4H1
IXYS

IGBT TRENCH 1200V 110A TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 110 A
  • Current - Collector Pulsed (Icm): 230 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
  • Power - Max: 680 W
  • Switching Energy: 5.55mJ (on), 1.55mJ (off)
  • Input Type: Standard
  • Gate Charge: 92 nC
  • Td (on/off) @ 25°C: 21ns/140ns
  • Test Condition: 960V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 380 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封装: -
Request a Quote
1200 V
110 A
230 A
2.5V @ 15V, 32A
680 W
5.55mJ (on), 1.55mJ (off)
Standard
92 nC
21ns/140ns
960V, 32A, 5Ohm, 15V
380 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
RGTV80TK65GVC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 39A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 39 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 85 W
  • Switching Energy: 1.02mJ (on), 710µJ (off)
  • Input Type: Standard
  • Gate Charge: 81 nC
  • Td (on/off) @ 25°C: 39ns/113ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封装: -
库存1,350
650 V
39 A
160 A
1.9V @ 15V, 40A
85 W
1.02mJ (on), 710µJ (off)
Standard
81 nC
39ns/113ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
SIGC121T60NR2CX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 450 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 125ns/225ns
  • Test Condition: 300V, 150A, 1.5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
150 A
450 A
2.5V @ 15V, 150A
-
-
Standard
-
125ns/225ns
300V, 150A, 1.5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IXGT6N170AHV-TRL
IXYS

IGBT 1700V 7A TO268HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 14 A
  • Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
  • Power - Max: 75 W
  • Switching Energy: 590µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.5 nC
  • Td (on/off) @ 25°C: 46ns/220ns
  • Test Condition: 850V, 6A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268HV (IXGT)
封装: -
Request a Quote
1700 V
6 A
14 A
7V @ 15V, 3A
75 W
590µJ (on), 180µJ (off)
Standard
18.5 nC
46ns/220ns
850V, 6A, 33Ohm, 15V
40 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268HV (IXGT)
RGT20NL65GTL
Rohm Semiconductor

IGBT TRENCH FLD 650V 20A TO263AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 106 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 22 nC
  • Td (on/off) @ 25°C: 12ns/32ns
  • Test Condition: 400V, 10A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封装: -
库存3,000
650 V
20 A
30 A
2.1V @ 15V, 10A
106 W
-
Standard
22 nC
12ns/32ns
400V, 10A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
RJH30E2DPP-00-T2
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIGC10T60EX1SA5
Infineon Technologies

IGBT TRENCH FS 600V 20A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
20 A
60 A
1.9V @ 15V, 20A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKFW75N65ES5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A HSIP247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 240 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
  • Power - Max: 148 W
  • Switching Energy: 1.48mJ (on), 660µJ (off)
  • Input Type: Standard
  • Gate Charge: 144 nC
  • Td (on/off) @ 25°C: 24ns/152ns
  • Test Condition: 400V, 60A, 8Ohm, 15V
  • Reverse Recovery Time (trr): 71 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
封装: -
库存3
650 V
80 A
240 A
1.7V @ 15V, 60A
148 W
1.48mJ (on), 660µJ (off)
Standard
144 nC
24ns/152ns
400V, 60A, 8Ohm, 15V
71 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
SIGC07T60SNCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 24ns/248ns
  • Test Condition: 400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
24ns/248ns
400V, 6A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
AUXTMGPS4070D1
Infineon Technologies

IGBT TRENCH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-