图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 650V 13.4A TO-220
|
封装: TO-220-3 |
库存7,936 |
|
MOSFET (Metal Oxide) | 650V | 13.4A (Tc) | 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | ±20V | - | 156W (Tc) | 330 mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存3,088 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 38nC @ 4.5V | 2710pF @ 15V | ±20V | - | 2.5W (Ta) | 8.5 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 75V 97A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,840 |
|
MOSFET (Metal Oxide) | 75V | 97A (Tc) | 10V | 4V @ 100µA | 130nC @ 10V | 3540pF @ 50V | ±20V | - | 190W (Tc) | 8.8 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET P-CH 20V 1.6A 6-TSOP
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存36,000 |
|
MOSFET (Metal Oxide) | 20V | 1.6A (Ta) | 2.5V, 4.5V | 500mV @ 250µA (Min) | 4nC @ 4.5V | - | ±12V | Schottky Diode (Isolated) | 830mW (Ta) | 200 mOhm @ 1.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 13A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,312 |
|
MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 4V @ 250µA | 56nC @ 10V | 2055pF @ 25V | ±30V | - | 195W (Tc) | 480 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 1000V 15A ISOPLUS247
|
封装: ISOPLUS247? |
库存6,368 |
|
MOSFET (Metal Oxide) | 1000V | 15A (Tc) | 10V | 6.5V @ 1mA | 197nC @ 10V | 11900pF @ 25V | ±30V | - | 290W (Tc) | 430 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 6.8A TO-220F
|
封装: TO-220-3 Full Pack |
库存7,056 |
|
MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 4V @ 250µA | 35.6nC @ 10V | 960pF @ 100V | ±30V | - | 30.5W (Tc) | 520 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 4.5A VS6
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存3,248 |
|
MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | - | 2V @ 100µA | 14nC @ 10V | 510pF @ 10V | - | - | 700mW (Ta) | 56 mOhm @ 2.2A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
||
STMicroelectronics |
MOSFET N-CH 600V 2.4A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存1,014,816 |
|
MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 4.5V @ 50µA | 11.8nC @ 10V | 311pF @ 25V | ±30V | - | 45W (Tc) | 3.6 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
IXYS |
MOSFET N-CH 600V 16A TO-220
|
封装: TO-220-3 |
库存6,368 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 5V @ 1.5mA | 36nC @ 10V | 1830pF @ 25V | ±30V | - | 347W (Tc) | 470 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 50A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,232 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | ±25V | - | 3.75W (Ta), 120W (Tc) | 22 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 60V 0.115A SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存102,612 |
|
MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 2.5V @ 250µA | - | 50pF @ 25V | ±20V | - | 225mW (Ta) | 7.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Rohm Semiconductor |
NCH 600V 24A POWER MOSFET
|
封装: TO-247-3 |
库存9,756 |
|
MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 5V @ 1mA | 45nC @ 10V | 2000pF @ 25V | ±20V | - | 245W (Tc) | 165 mOhm @ 11.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
封装: TO-220-3 |
库存17,868 |
|
MOSFET (Metal Oxide) | 60V | 80A | 4.5V, 10V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | ±20V | - | 87W (Tc) | 7.2 mOhm @ 15A, 4.5V | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Rohm Semiconductor |
MOSFET N-CH 600V 11A TO220-3
|
封装: TO-220-3 Full Pack |
库存8,436 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 1mA | 22nC @ 10V | 740pF @ 25V | ±20V | Schottky Diode (Isolated) | 53W (Tc) | 390 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
||
Rohm Semiconductor |
MOSFET N-CH 600V 24A TO247
|
封装: TO-247-3 |
库存6,648 |
|
MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 4V @ 1mA | 70nC @ 10V | 1650pF @ 25V | ±20V | - | 120W (Tc) | 165 mOhm @ 11.3A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 75V 80A TO-220AB
|
封装: TO-220-3 |
库存176,232 |
|
MOSFET (Metal Oxide) | 75V | 15A (Tc) | 6V, 10V | 4V @ 250µA | 138nC @ 10V | 6600pF @ 25V | ±20V | - | 310W (Tc) | 4.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 60V 5A TSOT26
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存3,280 |
|
MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4.5V, 10V | 3V @ 250µA | 22.4nC @ 10V | 1287pF @ 25V | ±20V | - | 1.2W (Ta) | 44 mOhm @ 4.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 47A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存103,740 |
|
MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 4V @ 1mA | 66nC @ 10V | 3100pF @ 25V | ±20V | - | 166W (Tc) | 28 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 900V 6.9A TO-220
|
封装: TO-220-3 |
库存414,864 |
|
MOSFET (Metal Oxide) | 900V | 6.9A (Tc) | 10V | 3.5V @ 460µA | 42nC @ 10V | 1100pF @ 100V | ±20V | - | 104W (Tc) | 800 mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 20A 8-SO
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存324,696 |
|
MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 3V @ 250µA | 260nC @ 10V | 7540pF @ 15V | ±25V | - | 2.5W (Ta) | 4.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Goford Semiconductor |
N60V,58A,RD<13M@10V,VTH1.0V~2.5V
|
封装: - |
库存7,005 |
|
MOSFET (Metal Oxide) | 60 V | 58A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 36 nC @ 10 V | 2841 pF @ 30 V | ±20V | - | 71W (Tc) | 13mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET P-CH 20V 4.9A TO236AB
|
封装: - |
库存66,510 |
|
MOSFET (Metal Oxide) | 20 V | 4.9A (Ta) | 2.5V, 8V | 1.3V @ 250µA | 16 nC @ 4.5 V | 1039 pF @ 10 V | ±12V | - | 610mW (Ta), 8.3W (Tc) | 33mOhm @ 4.9A, 8V | -55°C ~ 175°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
||
Panjit International Inc. |
20V P-CHANNEL ENHANCEMENT MODE M
|
封装: - |
库存8,835 |
|
MOSFET (Metal Oxide) | 20 V | 5.2A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 18 nC @ 4.5 V | 765 pF @ 10 V | ±12V | - | 2W (Ta) | 56mOhm @ 5.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
||
Goford Semiconductor |
P-60V,-25A,RD(MAX)<70M@-10V,VTH-
|
封装: - |
库存14,562 |
|
MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 25 nC @ 10 V | 1451 pF @ 30 V | ±20V | - | 42W (Tc) | 70mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (4.9x5.75) | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 600V 1.4A TO252
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 1.4A (Tc) | 10V | 5.5V @ 25µA | 5.2 nC @ 10 V | 140 pF @ 25 V | ±30V | - | 50W (Tc) | 9Ohm @ 700mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Microchip Technology |
MOSFET N-CH 200V 100A T-MAX
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 4V @ 2.5mA | 330 nC @ 10 V | 9880 pF @ 25 V | - | - | - | 18mOhm @ 50A, 10V | - | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
||
Vishay Siliconix |
MOSFET N-CH 600V 22A TO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 22A (Tc) | - | 4V @ 250µA | 110 nC @ 10 V | 2810 pF @ 25 V | - | - | 250W (Tc) | 190mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
||
Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 40 V (D-S)
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 40 V | 58A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 34 nC @ 10 V | 1633 pF @ 25 V | ±20V | - | 35W (Tc) | 5mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8SW | PowerPAK® SO-8 |
||
onsemi |
MOSFET N-CH 100V 128A TO220-3
|
封装: - |
库存1,743 |
|
MOSFET (Metal Oxide) | 100 V | 128A (Tc) | 10V | 4V @ 310µA | 68 nC @ 10 V | 5065 pF @ 50 V | ±20V | - | 2.4W (Ta), 150W (Tc) | 4.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |