图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 100V 15A
|
封装: 8-PowerTDFN |
库存2,816 |
|
MOSFET (Metal Oxide) | 100V | 15A (Ta), 82A (Tc) | 10V | 3.6V @ 100µA | 39nC @ 10V | 1685pF @ 50V | ±20V | - | 3.6W (Ta), 104W (Tc) | 7.5 mOhm @ 49A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 15A 8-SO
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存5,152 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 2.4V @ 50µA | 98nC @ 10V | 2590pF @ 25V | ±20V | - | 2.5W (Ta) | 7.2 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO-220
|
封装: TO-220-3 |
库存500,604 |
|
MOSFET (Metal Oxide) | 100V | 70A (Tc) | 4.5V, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | ±20V | - | 250W (Tc) | 16 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 26A TO-247AC
|
封装: TO-247-3 |
库存7,488 |
|
MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 5V @ 250µA | 180nC @ 10V | 5020pF @ 25V | ±30V | - | 470W (Tc) | 250 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
IXYS |
MOSFET N-CH 500V 30A PLUS220
|
封装: TO-220-3, Short Tab |
库存6,160 |
|
MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 5V @ 4mA | 70nC @ 10V | 4150pF @ 25V | ±30V | - | 460W (Tc) | 200 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 67A TO-263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存25,200 |
|
MOSFET (Metal Oxide) | 60V | 10A (Ta), 67A (Tc) | 5V, 10V | 3V @ 250µA | 31nC @ 5V | 2900pF @ 25V | ±20V | - | 125W (Tc) | 11.6 mOhm @ 67A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET NCH 100V 58A PQFN
|
封装: 8-PowerTDFN |
库存7,808 |
|
MOSFET (Metal Oxide) | 100V | 58A (Tc) | 10V | 4V @ 100µA | 74nC @ 10V | 3050pF @ 25V | ±20V | - | 4.3W (Ta), 125W (Tc) | 14.5 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 40V 50A TCPT3
|
封装: - |
库存5,712 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild/ON Semiconductor |
80V/20V N-CHANNEL PTNG MOSFET
|
封装: - |
库存5,760 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Sanken |
MOSFET N-CH 30V 18A 8DFN
|
封装: 8-PowerTDFN |
库存3,712 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 2.5V @ 650µA | 38.8nC @ 10V | 2460pF @ 15V | ±20V | - | 3.1W (Ta), 59W (Tc) | 3.8 mOhm @ 47.2A, 10V | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 48A SO8FL
|
封装: 8-PowerTDFN, 5 Leads |
库存909,660 |
|
MOSFET (Metal Oxide) | 30V | 9.7A (Ta), 48A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 10.8nC @ 4.5V | 1264pF @ 15V | ±20V | - | 920mW (Ta), 23.2W (Tc) | 6 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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IXYS |
MOSFET N-CH 1KV 24A SOT-227B
|
封装: SOT-227-4, miniBLOC |
库存6,800 |
|
MOSFET (Metal Oxide) | 1000V | 24A | 10V | 5.5V @ 8mA | 267nC @ 10V | 8700pF @ 25V | ±20V | - | 568W (Tc) | 390 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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STMicroelectronics |
MOSFET N-CH 600V 11A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,656 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 24.5nC @ 10V | 845pF @ 50V | ±25V | - | 109W (Tc) | 380 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 0.154A SOT-416
|
封装: SC-75, SOT-416 |
库存7,416,360 |
|
MOSFET (Metal Oxide) | 30V | 154mA (Tj) | 2.5V, 4.5V | 1.5V @ 100µA | - | 20pF @ 5V | ±10V | - | 300mW (Tj) | 7 Ohm @ 154mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SC-75, SOT-416 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存23,076 |
|
MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | ±20V | - | 270mW (Ta) | 1.5 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO220FP
|
封装: TO-220-3 Full Pack |
库存485,580 |
|
MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 3.9V @ 240µA | 31nC @ 10V | 570pF @ 100V | ±20V | - | 38W (Tc) | 1.3 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET N-CH 400V 0.16A TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存7,776 |
|
MOSFET (Metal Oxide) | 400V | 160mA (Tj) | 4.5V | 1.8V @ 1mA | - | 110pF @ 25V | ±20V | - | 1W (Tc) | 12 Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Infineon Technologies |
MOSFET N-CH 30V 22A TSDSON-8
|
封装: 8-PowerTDFN |
库存6,960 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta). 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 44nC @ 10V | 2800pF @ 15V | ±20V | - | 2.1W (Ta), 69W (Tc) | 1.9 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 620V 2.2A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存59,244 |
|
MOSFET (Metal Oxide) | 620V | 2.2A (Tc) | 10V | 4.5V @ 50µA | 15nC @ 10V | 340pF @ 50V | ±30V | - | 45W (Tc) | 3.6 Ohm @ 1.1A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 250V 33A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存18,516 |
|
MOSFET (Metal Oxide) | 250V | 33A (Tc) | 10V | 5V @ 250µA | 48nC @ 10V | 2135pF @ 25V | ±30V | - | 235W (Tc) | 94 mOhm @ 16.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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onsemi |
T8 80V LL LFPAK
|
封装: - |
库存8,970 |
|
MOSFET (Metal Oxide) | 80 V | 16A (Ta), 77A (Tc) | 4.5V, 10V | 2V @ 95µA | 34 nC @ 10 V | 1950 pF @ 40 V | ±20V | - | 3.7W (Ta), 89W (Tc) | 6.2mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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Vishay Siliconix |
MOSFET N-CH 600V 25A TO220AB
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 5V @ 250µA | 47 nC @ 10 V | 1533 pF @ 100 V | ±30V | - | 179W (Tc) | 125mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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MOSLEADER |
N 30V 5.1A SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
库存8,985 |
|
MOSFET (Metal Oxide) | 60 V | 3.7A (Ta), 11A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 9.3 nC @ 10 V | 509 pF @ 15 V | ±20V | - | 2.4W (Ta), 30W (Tc) | 75mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO263
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 4V @ 250µA | 122 nC @ 10 V | 2740 pF @ 100 V | ±30V | - | 250W (Tc) | 145mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
N-CHANNEL 100-V (D-S) MOSFET POW
|
封装: - |
库存30 |
|
MOSFET (Metal Oxide) | 100 V | 15.4A (Ta), 55.9A (Tc) | 7.5V, 10V | 4V @ 250µA | 23 nC @ 10 V | 1150 pF @ 50 V | ±20V | - | 5W (Ta), 65.7W (Tc) | 10.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
||
MOSLEADER |
P -30V 5.9A SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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onsemi |
MOSFET P-CH 30V 7A 6PQFN
|
封装: - |
库存7,365 |
|
MOSFET (Metal Oxide) | 30 V | 7A (Ta) | 4.5V, 10V | 3V @ 250µA | 38 nC @ 10 V | 1600 pF @ 15 V | ±25V | - | 860mW (Ta) | 11.3mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerWDFN |
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Transphorm |
GANFET N-CH 650V 3.6A 3PQFN
|
封装: - |
库存8,745 |
|
GaNFET (Cascode Gallium Nitride FET) | 650 V | 3.6A (Tc) | 8V | 2.8V @ 500µA | 9 nC @ 8 V | 760 pF @ 400 V | ±18V | - | 13.2W (Tc) | 560mOhm @ 3.4A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (5x6) | 3-PowerTDFN |
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Harris Corporation |
P-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |