图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 75V 13A 8-PQFN
|
封装: 8-PowerVDFN |
库存367,128 |
|
MOSFET (Metal Oxide) | 75V | 13A (Ta), 71A (Tc) | 10V | 4V @ 100µA | 59nC @ 10V | 2474pF @ 25V | ±20V | - | 3.6W (Ta), 105W (Tc) | 9.6 mOhm @ 43A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 55V 45A TO-220
|
封装: TO-220-3 |
库存7,744 |
|
MOSFET (Metal Oxide) | 55V | 45A (Tc) | 5V, 10V | 2.2V @ 30µA | 75nC @ 10V | 3600pF @ 25V | ±16V | - | 65W (Tc) | 13.4 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 42A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,648 |
|
MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 4V @ 50µA | 51nC @ 10V | 1440pF @ 25V | ±20V | - | 110W (Tc) | 22 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 900V 6.5A TO220
|
封装: TO-220-3 Full Pack |
库存2,256 |
|
MOSFET (Metal Oxide) | 900V | 6.5A (Ta) | 10V | - | 44nC @ 10V | 850pF @ 30V | ±30V | - | 2W (Ta), 37W (Tc) | 2.7 Ohm @ 3.25A, 10V | 150°C (TA) | Through Hole | TO-220-3 Fullpack/TO-220F-3SG | TO-220-3 Full Pack |
||
Diodes Incorporated |
MOSFET P-CH 35V 3.8A SOT223
|
封装: TO-261-4, TO-261AA |
库存755,004 |
|
MOSFET (Metal Oxide) | 35V | 3.8A (Ta), 5.3A (Tc) | 4.5V, 10V | 1V @ 250µA | 46nC @ 10V | 825pF @ 25V | ±20V | - | 2W (Ta) | 75 mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET N-CH 1000V TO-220FP
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存3,040 |
|
MOSFET (Metal Oxide) | 1000V | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET P-CH 100V 3.1A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,912 |
|
MOSFET (Metal Oxide) | 100V | 3.1A (Tc) | 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 1.2 Ohm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 560V 11.6A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存4,800 |
|
MOSFET (Metal Oxide) | 560V | 11.6A (Tc) | 10V | 3.9V @ 500µA | 49nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 380 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,880 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 40µA | 55nC @ 10V | 4100pF @ 25V | ±20V | - | 79W (Tc) | 3.6 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存5,248 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 1.8V @ 26µA | 1.5nC @ 10V | 45pF @ 25V | ±20V | - | 360mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,088 |
|
MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 11.1nC @ 4.5V | 1160pF @ 25V | ±20V | - | 54W (Tc) | 6 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 100V 40A TSDSON-8
|
封装: 8-PowerTDFN |
库存4,592 |
|
MOSFET (Metal Oxide) | 100V | 8A (Ta), 40A (Tc) | 6V, 10V | 3.8V @ 36µA | 28nC @ 10V | 2080pF @ 50V | ±20V | - | 2.1W (Ta), 69W (Tc) | 9.7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 16A 8PQFN
|
封装: 8-PowerVDFN |
库存474,288 |
|
MOSFET (Metal Oxide) | 30V | 16A (Ta), 42A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1510pF @ 15V | ±20V | - | 2.8W (Ta) | 7.1 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3x3) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 500V 14A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存82,728 |
|
MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 4.5V @ 100µA | 92nC @ 10V | 2000pF @ 25V | ±30V | - | 150W (Tc) | 380 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 100V 4.3A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存131,976 |
|
MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | ±10V | - | 2.5W (Ta), 25W (Tc) | 540 mOhm @ 2.6A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Nexperia USA Inc. |
MOSFET P-CH 30V 14.9A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存80,748 |
|
MOSFET (Metal Oxide) | 30V | 14.9A (Tc) | 10V | 3V @ 250µA | 50nC @ 10V | 2240pF @ 25V | ±20V | - | 6.9W (Tc) | 19 mOhm @ 9.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存6,228 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1040pF @ 15V | ±20V | - | 2.5W (Ta) | 8.5 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 20A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存178,380 |
|
MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 22.5nC @ 10V | 951pF @ 15V | ±20V | - | 3.1W (Ta) | 5.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 73A (Tc) | 10V | 4V @ 250µA | 12.1 nC @ 10 V | 897 pF @ 20 V | ±20V | - | 3.3W (Ta), 68W (Tc) | 7.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 13.5 nC @ 4.5 V | 1574 pF @ 25 V | ±20V | - | 60W (Tc) | 17mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
MOSFET P-CH 12V 5A SC88FL/ MCPH6
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 5A (Ta) | - | 1.4V @ 1mA | 6.9 nC @ 4.5 V | 660 pF @ 6 V | ±10V | - | 1.5W (Ta) | 43mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | SC-88FL/ MCPH6 | 6-SMD, Flat Leads |
||
IXYS |
MOSFET N-CH 250V 150A TO247
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 150A (Tc) | 10V | 4.5V @ 4mA | 154 nC @ 10 V | 10400 pF @ 25 V | ±20V | - | 780W (Tc) | 9mOhm @ 75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CHANNEL 30V 50A 8DFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 65 nC @ 10 V | 2994 pF @ 15 V | ±20V | - | 83W (Tc) | 1.7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
||
Vishay Siliconix |
P-CHANNEL 2.5-V (G-S) MOSFET
|
封装: - |
库存2,445 |
|
MOSFET (Metal Oxide) | 20 V | 2.2A (Ta) | 2.5V, 4.5V | 950mV @ 250µA | 10 nC @ 4.5 V | 375 pF @ 6 V | ±8V | - | 700mW (Ta) | 100mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Nexperia USA Inc. |
NXV40UN/SOT23/TO-236AB
|
封装: - |
库存196,734 |
|
MOSFET (Metal Oxide) | 20 V | 2.5A (Ta) | 1.5V, 4.5V | 950mV @ 250µA | 9 nC @ 4.5 V | 347 pF @ 10 V | ±8V | - | 340mW (Ta), 2.1W (Tc) | 50mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
||
Goford Semiconductor |
MOSFET P-CH 60V 60A TO-220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | - | 60A (Tc) | 10V | 4V @ 250µA | - | - | ±20V | - | 115W (Tc) | 20mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
N-CHANNEL 500V
|
封装: - |
库存5,535 |
|
MOSFET (Metal Oxide) | 500 V | 14.5A (Tc) | 10V | 4V @ 250µA | 66 nC @ 10 V | 1162 pF @ 100 V | ±30V | - | 156W (Tc) | 280mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Rohm Semiconductor |
1200V, 26A, 4-PIN THD, TRENCH-ST
|
封装: - |
库存1,239 |
|
SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | 1498 pF @ 800 V | +21V, -4V | - | 115W | 81mOhm @ 12A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Renesas Electronics Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
SIC 1700V MOS 1O IN TO263-7L
|
封装: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1700 V | 4.3A (Tc) | 20V | 4.3V @ 640µA | 14 nC @ 20 V | 150 pF @ 1000 V | +25V, -15V | - | 51W (Tc) | 1.43Ohm @ 2A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |